SQJ860EP-T1_GE3

Power MOSFET, N Channel, 40 V, 60 A, 6000 µohm, PowerPAK SO, Surface Mount

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Manufacturer: VISHAY
Product type: Single MOSFETs
Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 8Pins
Channel Type: N Channel
Product Range: TrenchFET
Qualification: AEC-Q101
Power Dissipation: 48W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: PowerPAK SO
Drain Source Voltage Vds: 40V
Operating Temperature Max: 175°C
Continuous Drain Current Id: 60A
Drain Source On State Resistance: 6000µohm
Gate Source Threshold Voltage Max: 2V

Delivery and price
Units per pack	5000
Price	0.316 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 15, 2026