SQ1912EH-T1_GE3
Dual MOSFET, Dual N Channel, 20 V, 800 mA, 0.2 ohm
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: VISHAY
- Product type:
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Channel Type: Dual N Channel
- Product Range: TrenchFET Series
- Qualification: AEC-Q101
- Transistor Case Style: SOT-363
- Operating Temperature Max: 175°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: -
- Drain Source Voltage Vds N Channel: 20V
- Drain Source Voltage Vds P Channel: -
- Continuous Drain Current Id N Channel: 800mA
- Continuous Drain Current Id P Channel: -
- Drain Source On State Resistance N Channel: 0.2ohm
- Drain Source On State Resistance P Channel: -
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.119 € |
| Current stock | 10+ |
| Lead time | 30 days |
Updated at March 30, 2026
