SPZT651T1G

Bipolar (BJT) Single Transistor, NPN, 60 V, 2 A, 800 mW, SOT-223, Surface Mount

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:75MHz; Power Dissipation Pd:800mW; DC Collector Current:2A; DC Current Gain hFE:40hFE; Tra
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 4Pins
Product Range: -
Qualification: AEC-Q101
Power Dissipation: 800mW
Transistor Mounting: Surface Mount
Transistor Polarity: NPN
Transition Frequency: 75MHz
Transistor Case Style: SOT-223
DC Current Gain hFE Min: 40hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 2A
Collector Emitter Voltage Max: 60V

Delivery and price
Units per pack	1000
Price	0.251 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026