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SPD15P10PGBTMA1
RF FET Transistor, -100 V, -15 A, 128 W, TO-252
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- Manufacturer: INFINEON
- Product type: RF FETs
- Drain Source Voltage Vds:-100V; Continuous Drain Current Id:-15A; Power Dissipation Pd:128W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:TO-252; No. of Pins:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Channel Type: P Channel
- Product Range: -
- Power Dissipation: 128W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-252
- Operating Frequency Max: -
- Operating Frequency Min: -
- Drain Source Voltage Vds: -100V
- Operating Temperature Max: 175°C
- Continuous Drain Current Id: -15A
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.563 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
**SPD15P10P G** ## **SIPMOS[®] Small-Signal-Transistor** ## **Features** - P-Channel - Enhancement mode |**Product Summary**||| |---|---|---| |||| |_V_DS|-100|V| |||| |_R_DS(on),max|0.24|Ω| |||| |_I_D|-15|A| - Normal level - Avalanche rated - Pb-free lead plating; RoHS compliant ## PG-TO252-3 - ° Qualified according to AEC Q101 |||||**Packing**| |---|---|---|---|---| |**Type**|**Package**|**Marking**|**Lead free**|| |||||Non dry| |SPP15P10P G|PG-TO220-3|15P10P|Yes|| |||||Non dry| |SPD15P10P G|PG-TO252-3|15P10P|Yes|| ## **Maximum ratings,** at _T_ j=25 °C, unless otherwise specified |**Parameter**|**Symbol **|**Conditions**|**Unit**<br>**Value**|**Unit**| |---|---|---|---|---| |Continuous drain current|_I_D|_T_C=25 °C|A<br>-15<br>-10.6<br>-60|A| |||_T_C=100 °C||| |Pulsed drain current|_I_D,pulse|_T_C=25 °C||| |Avalanche energy, single pulse|_E_AS|_I_D=-15 A,_R_GS=25Ω|mJ<br>230|mJ| |Gate source voltage|_V_GS||V<br>±20|V| |Power dissipation|_P_tot|_T_C=25 °C|W<br>128|W| |Operating and storage temperature|_T_j,_T_stg||°C<br>-55 ... 175|°C| |ESD Class|||1C (1kV to 2kV)|| |Soldering temperature|||260 °C|| |IEC climatic category; DIN IEC 68-1|||55/175/56|| Rev 1. 8 20 12 -0 9 - 11 page 1 **SPD15P10P G** |**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**|**SPD15P10P G**| |---|---|---|---|---|---|---|---|---| |**Parameter**<br>**Symbol Conditions**<br>**Unit**<br>**min.**<br>**typ.**<br>**max.**<br>**Values**<br>~~Tt~~||||||||| ||**Thermal characteristics**|||||||| ||Thermal resistance,<br>junction - soldering point||_R_thJC||-|-|1.17|K/W| ||Thermal resistance,<br>junction - ambient||_R_thJA|minimal footprint,<br>steady state|-|-|75|| |||||6 cm2cooling area1),<br>steady state|-|-|45|| ||**Electrical characteristics,**at_T_j=25 °C, unless otherwise specified|=25 °C, unless otherwise specified||||||| ||**Static characteristics**|||||||| ||Drain-source breakdown voltage||_V_(BR)DSS|_V_GS=0 V,_I_D=-1 mA|-100|-|-|V| ||Gate threshold voltage||_V_GS(th)|_V_DS=_V_GS,_I_D=-<br>1.54 mA|-4|-3|-2.1|| ||Zero gate voltage drain current||_I_DSS|_V_DS=-100 V,_V_GS=0 V,<br>_T_j=25 °C|=0 V,<br>-|-0.1|-1|µA| |||||_V_DS=-100 V,_V_GS=0 V,<br>_T_j=150 °C|=0 V,<br>-|-10|-100|| ||Gate-source leakage current||_I_GSS|_V_GS=-20 V,_V_DS=0 V|-|-10|-100|nA| ||Drain-source on-state resistance||_R_DS(on)|_V_GS=-10 V,<br>_I_D=-10.6 A|-|160|240|mΩ| ||Transconductance||_g_fs||_V_DS|>2|_I_D|_R_DS(on)max,<br>_I_D=-10.6 A|4.7|9.3|-|S| 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 1. 8 20 12 -0 9 - 11 page 2 **SPD15P10P G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics** Input capacitance _C_ iss - 961 1280 pF Output capacitance _C_ oss _V_ GS=0 V, _V_ DS=-25 V, - 237 315 _f_ =1 MHz Reverse transfer capacitance _C_ rss - 100 150 Turn-on delay time _t_ d(on) - 9.5 15.9 ns Rise time _t_ r _V_ DD=-50 V, - 23 33 _V_ GS=-10 V, Turn-off delay time _t_ d(off) _I_ D=-15 A, _R_ G=6 Ω - 33 43 Fall time _t_ f - 16 20 ~~=~~ Gate Charge Characteristics[2)] Gate to source charge _Q_ gs - 5.4 7.2 nC Gate to drain charge _Q_ gd _V_ DD=-80 V, _I_ D=-15 A, - 18 27 Gate charge total _Q_ g _V_ GS=0 to -10 V - 37 48 Gate plateau voltage _V_ plateau - 5.9 - V **Reverse Diode** ~~==~~ Diode continuous forward current _I_ S ~~EE~~ - - -15 A _T_ C=25 °C Diode pulse current _I_ S,pulse - - 60 _V_ GS=0 V, _I_ F=-15 A, Diode forward voltage _V_ SD - -0.94 -1.35 V _T_ j=25 °C Reverse recovery time _t_ rr - 100 150 ns _V_ R=50 V, _I_ F=| _I_ S|, Reverse recovery charge _Q_ rr d _i_ F/d _t_ =100 A/µs - 419 628 nC ~~et~~ 2) See figure 16 for gate charge parameter definition Rev 1. 8 20 12 -0 9 - 11 page 3 **SPD15P10P G** **1 Power dissipation** _P_ tot=f( _T_ C) **==> picture [191 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 40 80 120 160<br>T C [°C]<br> [W]<br> tot<br>P<br>**----- End of picture text -----**<br> ## **3 Safe operating area** _I_ D=f( _V_ DS); _T_ C=25 °C; _D_ =0 parameter: _t_ p **==> picture [210 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>1 µs<br>limited by on-state<br>resistance<br>100 µs<br>1 ms<br>10 [1]<br>10 ms<br>DC<br>10 [0]<br>10 [-1]<br>10 [0] 10 [1] 10 [2] 10 [3]<br>-V DS [V]<br> [A]<br> D<br>-I<br>**----- End of picture text -----**<br> ## **2 Drain current** _I_ D=f( _T_ C); | _V_ GS|≥10 V **==> picture [190 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>12<br>8<br>4<br>0<br>0 40 80 120 160<br>T C [°C]<br> [A]<br> D<br>-I<br>**----- End of picture text -----**<br> ## **4 Max. transient thermal impedance** _Z_ thJC=f( _t_ p) parameter: _D_ = _t_ p/ _T_ **==> picture [210 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [1]<br>10 [0]<br>0.5<br>0.2<br>0.1<br>0.05<br>10 [-1]<br>0.02<br>0.01<br>single pulse<br>10 [-2]<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0]<br>t p [s]<br> [K/W]<br> thJS<br>Z<br>**----- End of picture text -----**<br> Rev 1. 8 20 12 -0 9 - 11 page 4 **SPD15P10P G** **5 Typ. output characteristics** _I_ D=f( _V_ DS); _T_ j=25 °C parameter: _V_ GS **==> picture [208 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 40<br>35<br>-10 V<br>30 -8 V<br>-7 V<br>25<br>20 -6 V<br>15<br>10<br>-5 V<br>5 -4.5 V<br>-4 V<br>0<br>0 2 4 6 8 10<br>-V DS [V]<br> [A]<br> D<br>-I<br>**----- End of picture text -----**<br> ## **7 Typ. transfer characteristics** _I_ D=f( _V_ GS); | _V_ DS|>2| _I_ D| _R_ DS(on)max parameter: _T_ j **==> picture [182 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>25 °C<br>8<br>125 °C<br>6<br>4<br>2<br>0<br>1 3 5 7<br>-V GS [V]<br> [A]<br> D<br>-I<br>**----- End of picture text -----**<br> ## **6 Typ. drain-source on resistance** _R_ DS(on)=f( _I_ D); _T_ j=25 °C parameter: _V_ GS **==> picture [209 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>-4 V<br>-4.5 V<br>400<br>-5 V<br>-6 V<br>300<br>-7 V<br>200<br>-8 V<br>-10 V<br>100<br>0 10 20 30<br>-I D [A]<br>]<br>Ω<br> [m<br> DS(on)<br>R<br>**----- End of picture text -----**<br> **8 Typ. forward transconductance** _g_ fs=f( _I_ D); _T_ j=25 °C **==> picture [209 x 249] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30<br>-I D [A]<br> [S]<br> fs<br>g<br>**----- End of picture text -----**<br> Rev 1. 8 20 12 -0 9 - 11 page 5 **SPD15P10P G** ## **9 Drain-source on-state resistance** _R_ DS(on)=f( _T_ j); _I_ D=-10.6 A; _V_ GS=-10 V ## **10 Typ. gate threshold voltage** _V_ GS(th)=f( _T_ j); _V_ GS= _V_ DS; _I_ D=-1.54 mA **==> picture [434 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 500 5<br>min.<br>400 4<br>98 % RR<br>300 3 typ.<br>max.<br>200 2<br>typ.<br>100 1<br>0 0<br>-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180<br>T j [°C] T j [°C]<br>]<br>[m Ω [V]<br> GS(th)<br> DS(on) -V<br>R<br>**----- End of picture text -----**<br> ## **11 Typ. capacitances** _C_ =f( _V_ DS); _V_ GS=0 V; _f_ =1 MHz ## **12 Forward characteristics of reverse diode** _I_ F=f( _V_ SD) parameter: _T_ j **==> picture [434 x 250] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [2]<br>25 °C, typ<br>175 ° C, 98%<br>10 [1] 175 °C, typ<br>10 [3] Ciss 25 ° C, 98%<br>10 [0]<br>Coss<br>10 [2]<br>Crss<br>10 [-1]<br>10 [1] 10 [-2]<br>0 20 40 60 80 0 0.5 1 1.5<br>-V DS [V] -V SD [V]<br>C [pF] [A] I F<br>**----- End of picture text -----**<br> Rev 1. 8 20 12 -0 9 - 11 page 6 **SPD15P10P G** ## **13 Avalanche characteristics** _I_ AS=f( _t_ AV); _R_ GS=25 Ω parameter: _T_ j(start) ## **14 Typ. gate charge** _V_ GS=f( _Q_ gate); _I_ D=-15 A pulsed parameter: _V_ DD **==> picture [471 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>50 V<br>20 V<br>8 80 V<br>25 °C<br>10 [1]<br>100 °C 6<br>125 °C<br>4<br>10 [0]<br>2<br>10 [-1] me 0<br>10 [0] 10 [1] 10 [2] 10 [3] 0 10 20 30 40<br>t AV [µs] - Qgate [nC]<br>15 Drain-source breakdown voltage 16 Gate charge waveforms<br>V BR(DSS)=f( T j); I D=-1mA<br>120<br>V GS<br>115 Q g<br>110<br>105<br>V gs(th)<br>100<br>95<br>Q g(th) Q sw Q gate<br>90 Q gs Q gd<br>-60 ya -20 20 60 100 140 180 l<br>T j [°C]<br>20 12 -0 9 - 11<br> [A] [V]<br> AV GS<br>-I V -<br> [V]<br> BR(DSS)<br>-V<br>**----- End of picture text -----**<br> Rev 1. 8 page 7 **SPD15P10P G** ## **Package Outline: PG-TO-252-3** Rev 1. 8 20 12 -0 9 - 11 page 8 **SPD15P10P G** ## **PG-TO220-3: Outline** Rev 1. 8 20 12 -0 9 - 11 page 9 **SPD15P10P G** Rev 1. 8 20 12 -0 9 - 11 page 10
Updated at April 24, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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