Image not available
Illustrative purposes only
SP8K80TB1
Power MOSFET, N Channel, 500 V, 500 mA, 11.7 ohm, SOP, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ROHM
- Product type: Single MOSFETs
- SVHC: To Be Advised
- No. of Pins: 8Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 2W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: SOP
- Drain Source Voltage Vds: 500V
- Operating Temperature Max: -
- Continuous Drain Current Id: 500mA
- Drain Source On State Resistance: 11.7ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 2500 |
| Price | 0.705 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 10V Drive Nch MOSFET ## **SP8K80** ## **Structure** Silicon N-channel MOSFET ## **Features** 1) Built-in G-S protection diode. 2) Small surface mount package(SOP8). ## **Dimensions** (Unit : mm) **==> picture [120 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> SOP8<br>(8) (7) (6) (5)<br>(1) Tr1 Source<br>(2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate ||<br>(5) Tr2 Drain el (1) (2) (3) (4)<br>(6) Tr2 Drain<br>(7) Tr1 Drain ae<br>(8) Tr1 Drain<br>**----- End of picture text -----**<br> **Application** Switching ## **Packaging specifications** |Type|Package|Taping| |---|---|---| ||Code|TB| ||Basic orderingunit(pieces)|2500| |g(p)<br>SP8K80||| ## **Inner circuit** **==> picture [155 x 113] intentionally omitted <==** **----- Start of picture text -----**<br> (8) (7) (6) (5)<br>(1) Tr1 Source ∗ 2 ∗ 2<br>(2) Tr1 Gate<br>(3) Tr2 Source<br>(4) Tr2 Gate ∗ 1 ∗ 1<br>(5) Tr2 Drain<br>(6) Tr2 Drain (1) (2) (3) (4)<br>(7) Tr1 Drain 1 ESD PROTECTION DIODE<br>(8) Tr1 Drain 2 BODY DIODE<br>**----- End of picture text -----**<br> **Absolute maximum ratings** (Ta = 25C) |**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)|**Absolute maximum ratingsgss **(Ta = 25C)Ta = 25C)|(Ta = 25C)Ta = 25C)C)C))||| |---|---|---|---|---| |Parameter||Symbol<br>~~a~~|Limits<br>~~a~~|Unit| |Drain-source voltage||VDSS<br>~~rr~~|500<br>~~rr~~|V| |Gate-source voltage<br>~~a~~||VGSS<br>~~a~~<br>~~ee~~|30<br>~~a~~<br>~~ee~~|V<br>~~ee~~| |Drain current|Continuous<br>~~a~~<br>~~a~~|ID<br>*3<br>~~ee~~<br>~~ee~~|0.5<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| ||Pulsed<br>~~a~~<br>~~a~~<br>~~a~~|IDP<br>*1<br>~~ee ~~<br>~~ee~~<br>~~ee~~|2<br> ~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| |Source current<br>(Body Diode)|Continuous<br>~~a~~<br>~~rs~~<br>~~a~~|IS<br>*3<br>~~ee ~~<br>~~rs~~<br>~~ee~~<br>~~ee~~|0.5<br> ~~ee~~<br>~~rs~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| ||Pulsed<br>~~a~~|ISP<br>*1<br>~~ee~~<br>~~ee~~|2<br>~~ee~~|A<br>~~ee~~| |Avalanche current||IAS<br>*2<br>~~ee~~<br>~~a~~|0.25<br>~~ee~~<br>~~a~~|A<br>~~ee~~| |Avalanche energy||EAS<br>*2<br>~~a~~|0.017<br>~~a~~|mJ| |Power dissipation||PD<br>*4<br>~~a~~|2<br>~~a~~|W| |Channel temperature||Tch<br>~~a~~|0.2<br>~~a~~|C| |Range of storage temperature||Tstg<br>~~a~~|55 to150<br>~~a~~|C| *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25, Tch=25°C - *3 Limited only by maximum channel temperature allowed. - *4 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 1/6 Data Sheet **SP8K80** ## **Electrical characteristics** (Ta = 25C) |**Electrical characteristics**(Ta|= 25C)|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Gate-source leakage|IGSS|-|-|10|A|VGS=30V, VDS=0V| |Drain-source breakdown voltage|V(BR)DSS|500|-|-|V|ID=1mA, VGS=0V| |Zerogate voltage drain current|IDSS|-|-|100|A|VDS=500V, VGS=0V| |Gate threshold voltage|VGS(th)|3.0|-|5.0|V|VDS=10V, ID=1mA| |Static drain-source on-state<br>resistance|RDS (on)<br>*|-|9.0|11.7||ID=0.25A, VGS=10V| |Forward transfer admittance|l Yfsl<br>*|0.1|-|-|S|VDS=10V, ID=0.25A| |Input capacitance|Ciss|-|23.5|-|pF|VDS=25V<br>VGS=0V<br>f=1MHz| |Output capacitance|Coss|-|36.5|-|pF|| |Reverse transfer capacitance|Crss|-|2.4|-|pF|| |Turn-on delaytime|td(on)<br>*|-|10|-|ns|VDD 250V, ID=0.25A<br>VGS=10V<br>RL=1000<br>RG=10| |Rise time|tr<br>*|-|18|-|ns|| |Turn-off delaytime|td(off)<br>*|-|25|-|ns|| |Fall time|tf<br>*|-|170|-|ns|| |Totalgate charge|Qg<br>*|-|3.8|-|nC|VDD 250V<br>ID=0.5A<br>VGS=10V| |Gate-source charge|Qgs<br>*|-|1.3|-|nC|| |Gate-drain charge|Qgd<br>*|-|1.6|-|nC|| *Pulsed ## **Body diode characteristics** (Source-Drain) |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |---|---|---|---|---|---|---| |Forward voltage|VSD<br>*|-|-|1.5|V|IS=0.25A, VGS=0V| *Pulsed www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 2/6 Data Sheet **SP8K80** ## **Electrical characteristic curves** (Ta=25C) Fig.1 Typical Output Characteristics ( `Ⅰ` ) **==> picture [195 x 624] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>Ta=25°C VGS=10.0V<br>Pulsed VGS=8.0V<br>0.08 VGS=7.0V<br>VGS=6.5V<br>VGS=6.0V<br>0.06 VGS=5.0V<br>0.04<br>0.02<br>VGS=4.5V<br>0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1<br>Drain-Source Voltage : VDS [V]<br>Fig.3 Typical Transfer Characteristics<br>1<br>VDS=10V<br>pulsed<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>0.1 Ta=-25°C<br>0.01<br>0.001<br>2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>Gate-Source Voltage : VGS [V]<br>Fig.5 Static Drain-Source On-State Resistance vs. Drain Current<br>100<br>VGS=10V Ta=125°C<br>pulsed Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>10<br>1<br>0.01 0.1 1<br>Drain Current : ID [A]<br>Drain Current : I [A] D<br>Drain Currnt : I [A] D<br> [Ω]<br>DS(on)<br>R<br>Static Drain-Source On-State Resistance<br>**----- End of picture text -----**<br> Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.2 Typical Output Characteristics ( `Ⅱ` ) **==> picture [195 x 186] intentionally omitted <==** **----- Start of picture text -----**<br> 0.5<br>VVGSGS=10.0V =8.0V VGS=6.0V<br>0.4 VGS=7.0V<br>VGS=6.5V Ta=25°C<br>Pulsed<br>0.3<br>0.2<br>VGS=5.0V<br>0.1<br>VGS=4.5V<br>0.0<br>0 1 2 3 4 5 6 7 8 9 10<br>Drain-Source Voltage : VDS [V]<br>Drain Current : I [A] D<br>**----- End of picture text -----**<br> Fig.4 Gate Threshold Voltage vs. Channel Temperature **==> picture [208 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 6<br>VDS=10V<br>ID=1mA<br>pulsed<br>5<br>4<br>3<br>2<br>-50 0 50 100 150<br>Channel Temperature : Tch [ ℃ ]<br>Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature<br>25<br>VGS=10V<br>pulsed<br>20<br>ID=0.50A<br>15<br>10 ID=0.25A<br>5<br>0<br>-50 0 50 100 150<br>Channel Temperature : Tch [ ℃ ]<br> [V]<br>GS(th)<br>Gate Threshold Voltage : V<br> [Ω]<br>DS(on)<br>Static Drain-Source On-State Resistance : R<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 3/6 Data Sheet **SP8K80** Fig.7 Forward Transfer Admittance vs. Drain Current **==> picture [196 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>VDS=10V<br>pulsed<br>0.1<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>0.01<br>0.001<br>0.001 0.01 0.1 1<br>Drain Current : ID [A]<br> [S]<br>fs<br>Y<br>Forward Transfer Admittance<br>**----- End of picture text -----**<br> Fig.8 Source Current vs. Source-Drain Voltage **==> picture [188 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>VGS=0V<br>pulsed<br>Ta=125°C<br>Ta=75°C<br>Ta=25°C<br>Ta=-25°C<br>0.1<br>0.01<br>0 0.5 1 1.5 2<br>Source-Drain Voltage : VSD [V]<br>Source Current : I [A] S<br>**----- End of picture text -----**<br> FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.10 Switching Characteristics **==> picture [450 x 405] intentionally omitted <==** **----- Start of picture text -----**<br> 20 10000<br>18 Ta=25Pulsed °C VVDDGS ≒ =10V 250V<br>16 1000 tf RTaG=25=10Ω °C<br>Pulsed<br>14<br>12<br>ID=0.5A td(off)<br>10 100<br>8 ID=0.25A tr<br>6<br>10<br>4 td(on)<br>2<br>0 1<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 0.01 0.1 1<br>Gate-Source Voltage : VGS [V] Drain Current : ID [A]<br>Fig.11 Dynamic Input Characteristics Fig.12 Typical Capacitance vs. Drain-Source Voltage<br>12 1000<br>Ta=25°C Ta=25°C<br>10 VIDDD=0.5A =250V Coss f=1MHz VGS=0V<br>Pulsed<br>100<br>8 Ciss<br>6 10 Crss<br>4<br>1<br>2<br>0 0.1<br>0 1 2 3 4 5 0.01 0.1 1 10 100 1000<br>Total Gate Charge : Qg [nC] Drain-Source Voltage : VDS [V]<br>]<br>W<br> [<br>DS(on)<br>R<br>Switching Time : t [ns]<br>Static Drain-Source On-State Resistance<br> [V]<br>GS Capacitance : C [pF]<br>Gate-Source Voltage : V<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 4/6 Data Sheet **SP8K80** Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width **==> picture [195 x 184] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Ta=25°C<br>Single Pulse:1unit<br>1<br>0.1<br>0.01<br>Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>Rth(ch-a)=89.3°C/W<br>Rth(ch-a)(t)=r(t)×Rth(ch-a)<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>Pulse width : Pw (s)<br>）（tr<br>Normalized Transient Thermal Resistance :<br>**----- End of picture text -----**<br> Fig.14 Maximum Safe Operating Area **==> picture [224 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>Operation in this area<br>is limited by RDS(on)<br>(VGS = 10V)<br>1<br>PW = 100μs<br>0.1<br>PW = 1ms<br>PW = 10ms<br>0.01<br>Ta=25°C<br>Single Pulse:1unit DC operation<br>Mounted on a ceramic board.<br>(30mm × 30mm × 0.8mm)<br>0.001<br>0.1 1 10 100 1000<br>Drain-Source Voltage : VDS [ V ]<br>[ A ]<br>Current : ID<br>Drain<br>**----- End of picture text -----**<br> Fig.15 Reverse Recovery Time vs. Source Current **==> picture [191 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>Ta=25°C<br>di/dt=50A/μs<br>VGS=0V<br>Pulsed<br>100<br>10<br>0.1 1<br>Source Current : IS [A]<br> [ns] Reverse Recovery Time : trr<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 5/6 Data Sheet **SP8K80** ## **Measurement circuits** **==> picture [105 x 74] intentionally omitted <==** **----- Start of picture text -----**<br> VGS ID<br>VDS<br>RL<br>D.U.T.<br>RG VDD<br>**----- End of picture text -----**<br> Fig.1-1 Switching Time Measurement Circuit **==> picture [128 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> VGS ID<br>VDS<br>RL<br>IG(Const.) D.U.T.<br>VDD<br>**----- End of picture text -----**<br> Fig.2-1 Gate Charge Measurement Circuit **==> picture [105 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> VGS IAS<br>VDS<br>L<br>D.U.T.<br>RG<br>VDD<br>**----- End of picture text -----**<br> Fig.3-1 Avalanche Measurement Circuit **==> picture [120 x 91] intentionally omitted <==** **----- Start of picture text -----**<br> Pulse width<br>50% 90% 50%<br>VGS 10%<br>VDS<br>10% 10%<br>90% 90%<br>td(on) tr td(off) tf<br>ton toff<br>**----- End of picture text -----**<br> Fig.1-2 Switching Waveforms **==> picture [130 x 235] intentionally omitted <==** **----- Start of picture text -----**<br> VG<br>Qg<br>VGS<br>Qgs Qgd<br>Charge<br>Fig.2-2 Gate Charge Waveform<br>V(BR)DSS<br>IAS<br>VDD<br>EAS = 1 L IAS2 V(BR)DSS<br>2 V(BR)DSS - VDD<br>**----- End of picture text -----**<br> Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 6/6 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at June 5, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 540,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →