SNUF6401MNT1G

## 6-Channel EMI Filter with Inte rated ESD Protection g 

## NUF6401 

The NUF6401MN is a six−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100  and C = 17 pF deliver a cutoff frequency of 110 MHz and | stop band attenuation greater than −30 dB from 800 MHz to 3.0 GHz. 

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This performance makes the part ideal for parallel interfaces with<br>MARKING<br>data rates up to 74 Mbps in applications where wireless interference<br>DIAGRAMS<br>must be minimized. The specified attenuation range is very effective<br>in minimizing interference from 2G/3G, GPS, Bluetooth® and 1<br>WLAN signals. 12 64<br>The NUF6401MN is available in low−profile 12−lead 1.35 mm x DFN12 01<br>CASE 506AD<br>3.0 mm DFN12/DFNW12 surface mount packages. M<br>1<br>Features/Benefits _<br>• ±15 kV ESD Protection on each channel (IEC61000−4−2 Contact15 kV ESD Protection on each channel (IEC61000−4−2 Contact 6401= Specific Device Code<br>Discharge) M = Month<br>• R/C Values of 100  and 17 pF deliver Exceptional S21 Performance = Pb−Free Package<br>Characteristics of 110 MHz f3dB and −30 dB Stop Band Attenuation3dB and −30 dB Stop Band Attenuation and −30 dB Stop Band Attenuation (Note: Microdot may be in either location)<br>from 800 MHz to 3.0 GHz<br>1<br>• Integrated EMI/ESD System Solution in DFN/DFNW Packages<br>12 64<br>Offer Exceptional Cost, System Reliability and Space Savings DFNW12 W<br>• SZNUF6401MNWT1G − Wettable Flank Package for optimal | . CASE 507AY M<br>Automated Optical Inspection (AOI) 1<br>• S & SZ Prefix for Automotive and Other Applications Requiring<br>Unique Site and Control Change Requirements; AEC−Q101 64W = Specific Device Code<br>M = Date Code<br>Qualified and PPAP Capable<br>= Pb−Free Package<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **Features/Benefits** 

- ±15 kV ESD Protection on each channel (IEC61000−4−2 Contact15 kV ESD Protection on each channel (IEC61000−4−2 Contact Discharge) 

- R/C Values of 100  and 17 pF deliver Exceptional S21 Performance Characteristics of 110 MHz f3dB and −30 dB Stop Band Attenuation3dB and −30 dB Stop Band Attenuation and −30 dB Stop Band Attenuation from 800 MHz to 3.0 GHz 

- • Integrated EMI/ESD System Solution in DFN/DFNW Packages Offer Exceptional Cost, System Reliability and Space Savings 

- • SZNUF6401MNWT1G − Wettable Flank Package for optimal | Automated Optical Inspection (AOI) 

- S & SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- EMI Filtering for LCD and Camera Data Lines 

- EMI Filtering and Protection for I/O Ports and Keypads 

## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|NUF6401MNT1G|DFN12<br>(Pb−Free)|3000 / Tape &<br>Reel|
|SNUF6401MNT1G|DFN12<br>(Pb−Free)|3000 / Tape &<br>Reel|
|SZNUF6401MNWT1G|DFNW12<br>(Pb−Free)|3000 / Tape &<br>Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: **NUF6401/D** 

**1** 

© Semiconductor Components Industries, LLC, 2013 **November, 2020 − Rev. 6** 

**NUF6401** 

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0<br>−5<br>−10<br>−15<br>−20<br>−25<br>Filter + ESDn R = 100  � Filter + ESDn −30<br>−35<br>Cd = 17 pF Cd = 17 pF<br>−40<br>−45<br>See Table 1 for pin description 1.0E+6 10E+6 100E+6 1.0E+9 10E+9<br>FREQUENCY (Hz)<br>S21 (dB)<br>**----- End of picture text -----**<br>


**Figure 1. Electrical Schematic** 

**Figure 2. Typical Insertion Loss Characteristic** 

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1 2 3 4 5 6<br>GND<br>12 11 10 9 8 7<br>(Bottom View)<br>**----- End of picture text -----**<br>


**Figure 3. Pin Diagram** 

## **Table 1. FUNCTIONAL PIN DESCRIPTION** 

|**Table 1. FUNCTIONAL PIN**|**DESCRIPTION**||
|---|---|---|
|**Filter**|**Device Pins**|**Description**|
|Filter 1|1 & 12|Filter + ESD Channel 1|
|Filter 2|2 & 11|Filter + ESD Channel 2|
|Filter 3|3 & 10|Filter + ESD Channel 3|
|Filter 4|4 & 9|Filter + ESD Channel 4|
|Filter 5|5 & 8|Filter + ESD Channel 4|
|Filter 6|6 & 7|Filter + ESD Channel 4|
|Ground Pad|GND|Ground|



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**NUF6401** 

## **MAXIMUM RATINGS** 

|**MAXIMUM RATINGS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|ESD Discharge IEC61000−4−2<br>Contact Discharge|VPP|15|kV|
|DC Power per Resistor|PR|100|mW|
|DC Power per Package|PT|600|mW|
|Operating Temperature Range|TOP|−40 to 105|°C|
|Storage Temperature Range|TSTG|−55 to 150|°C|
|Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)|TL|260|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**|(TJ= 25°C u|nless otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|Maximum Reverse Working Voltage|VRWM||||5.0|V|
|Breakdown Voltage|VBR|IR= 1.0 mA|6.0|7.0||V|
|Leakage Current|IR|VRWM= 3.0 V<br>VRWM= 5.0 V||10<br>50|1000<br>1000|nA|
|Resistance|RA|IR= 10 mA|85|100|115|�|
|Diode Capacitance|Cd|VR= 2.5 V, f = 1.0 MHz||17|20|pF|
|Line Capacitance|CL|VR= 2.5 V, f = 1.0 MHz||34|40|pF|
|3 dB Cut−Off Frequency (Note 1)|f3dB|Above this frequency,<br>appreciable attenuation occurs||110||MHz|
|6 dB Cut−Off Frequency (Note 1)|f6dB|Above this frequency,<br>appreciable attenuation occurs||175||MHz|



1. 50 � source and 50 � load termination. 

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**NUF6401** 

## **TYPICAL PERFORMANCE CURVES** (TA= 25 ° C unless otherwise specified) 

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0<br>−5<br>−10<br>−15<br>−20<br>−25<br>−30<br>−35<br>−40<br>−45<br>1.0E+6 10E+6 100E+6 1.0E+9 10E+9<br>FREQUENCY (Hz)<br>S21 (dB)<br>**----- End of picture text -----**<br>


**Figure 4. Typical Insertion Loss Characteristic** 

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0<br>−10<br>−20<br>−30<br>−40<br>−50<br>−60<br>−70<br>−80<br>10E+6 100E+6 1.0E+9 10E+9<br>FREQUENCY (Hz)<br>S41 (dB)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Analog Crosstalk** 

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2<br>1.5<br>1<br>0.5<br>0<br>0 1 2 3 4 5<br>REVERSE VOLTAGE (V)<br>NORMALIZED CAPACITANCE<br>**----- End of picture text -----**<br>


**Figure 6. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance, Cd @ 2.5 V)** 

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110<br>108<br>106<br>104<br>102<br>100<br>98<br>96<br>94<br>92<br>90<br>−40 −20 0 20 40 60 80<br>TEMPERATURE ( ° C)<br>) �<br>RESISTANCE (<br>**----- End of picture text -----**<br>


**Figure 7. Typical Resistance over Temperature** 

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**NUF6401** 

## **Theory of Operation** 

The NUF6401MN combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. 

## **Application Example** 

The accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series 

approximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation. 

From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency _x_ the minimum filter bandwidth necessary is _3x_ . All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 8 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used. 

## **Equation 1:** 

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## **Equation 2 (simplified form of Equation 1):** 

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−3 dB<br>−6 dB<br>−9 dB<br>f1<br>f2<br>f3<br>100k 1M 10M 100M 1G 10G<br>Frequency (Hz)<br>Figure 8. Filter Bandwidth<br>Magnitude (dB)<br>**----- End of picture text -----**<br>


From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate 

multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. 

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**5** 

**NUF6401** 

**Table 2. Frequency Chart** 

|**Bandwidth**|**Maximum Supported**<br>**Frequency**|**Third Harmonic**<br>**Frequency**|
|---|---|---|
|3 dB –<br>100 MHz|33.33 MHz (f1)|100 MHz|
|6 dB –<br>200 MHz|66.67 MHz (f2)|200 MHz|
|9 dB –<br>300 MHz|100 MHz (f3)|300 MHz|



Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 9a. If a signal 

with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 9b. In the case that a 100 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 9c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. _To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate._ 

**Input Waveform** 

**Output Waveform** 

**a) Frequency = f1** 

**Input Waveform** 

**Output Waveform** 

**b) Frequency = f2** 

**Input Waveform** 

**Output Waveform** 

**c) Frequency = f3** 

**Figure 9. Input and Output Waveforms of Filter** 

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**6** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFN12 3.0x1.35, 0.5P<br>12 CASE 506AD−01<br>ISSUE J<br>& DATE  09 JUL 2008<br>1<br>2 X<br>SCALE 4:1<br>0.15 C NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>A D ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>B 3. DIMENSION b APPLIES TO PLATED<br>(A3) TERMINAL AND IS MEASURED BETWEEN<br>ato 0.25 AND 0.30 MM FROM TERMINAL.<br>4. COPLANARITY APPLIES TO THE EXPOSED<br>PAD AS WELL AS THE TERMINALS.<br>E 5. EXPOSED PADS CONNECTED TO DIE FLAG.<br>2 X USED AS TEST CONTACTS.<br>0.15 C MILLIMETERS<br>TOP VIEW EXPOSED Cu DIM MIN MAX<br>am PIN ONE s Od A 0.80 1.00<br>REFERENCE A1 0.00 0.05<br>(A3) A3 0.20 REF<br>b 0.18 0.30<br>0.10 C D 3.00 BSC<br>A D2 2.10 2.30<br>EDGE OF PACKAGE E 1.35 BSC<br>12 X ZT 0.08 C eeew ally SEATINGPLANE L E2 0.20 0.40<br>SIDE VIEW e 0.50 BSC<br>A1 C K 0.20 −−−<br>L 0.20 0.40<br>L1 L1 0.00 0.15<br>DETAIL A D2<br>GENERIC<br>12X L 1 e 6 E2EXPOSED PAD CONSTRUCTIONDETAIL AOPTIONAL MARKING DIAGRAM*<br>2X 1<br>0.2 X 0.25 MM<br>NOTE 5 XX<br>XX<br>12 7<br>12X K 12X b M<br>0.10 C A B<br>0.05 C NOTE 3<br>BOTTOM VIEW =.<br>XXXX = Specific Device Code<br>SOLDERING FOOTPRINT* M = Month Code<br>0.479 = Pb−Free Package<br>0.019 (Note: Microdot may be in either location)<br>a<br>0.265 *This information is generic. Please refer<br>0.010 to device data sheet for actual part<br>marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>STYLE 1:<br>0.500 2.352 PIN 1. ANODE 1<br>0.020 0.093  2. 3. ANODE 2ANODE 3<br>Pitch  4. ANODE 4<br> 5. ANODE 5<br> 6. ANODE 6<br> 7. ANODE 7<br> 8. ANODE 8<br> 9. ANODE 9<br> 10. ANODE 10<br> 11. ANODE 11<br>0.199  12. ANODE 12<br>0.008<br>0.351<br>0.014<br>SCALE 16:1 mm<br>ae inches<br>**----- End of picture text -----**<br>


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DATE  09 JUL 2008<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

## **DOCUMENT NUMBER: 98AON19409D DESCRIPTION:** [_- 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**DESCRIPTION: DFN12 3.0x1.35, 0.5 MM PITCH** 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2019 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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DFNW12 3x1.35, 0.5P<br>12 CASE 507AY<br>ISSUE O<br>1<br>**----- End of picture text -----**<br>


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DATE 13 JUN 2019<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>1<br>XX<br>XX<br>M<br>XX = Specific Device Code<br>M = Date Code<br>. = Pb−Free Package<br>**----- End of picture text -----**<br>


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(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

## **DOCUMENT NUMBER:** 

## **98AON08530H** 

## **DESCRIPTION: DFNW12 3x1.35, 0.5P** 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

**PAGE 1 OF 1** 

ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

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© Semiconductor Components Industries, LLC, 2018 

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