SMMSD4148T3G

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## Switching Diode 

## MMSD4148, SMMSD4148 

## **Features** 

## **SOD-123 CASE 425 STYLE 1** 

- SOD-123 Surface Mount Package 

- High Breakdown Voltage 

- Fast Speed Switching Time 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable* 

- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

1 2 CATHODE ANODE 

## **MARKING DIAGRAM** 

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~~es~~ **Rating Symbol Value Unit** 5IM = Date Code= Device Code Continuous Reverse Voltage VR 100 V = Pb-Free Package ~~ee~~ ~~**ee e** es~~ . ~~es~~ Forward Current ~~ee~~ IF 200 ~~es~~ mA (Note: Microdot may be in either location) Forward Surge Current t < 1 s IFSM 1.0 A ~~a~~ (Note 1) t = 1 s 2.0 **ORDERING INFORMATION** Repetitive Peak Forward Current IFRM 0.5 A (Pulse Wave = 1 sec, Duty Cycle = 66%) **Device Package Shipping**[†] ~~ee~~  MMSD4148T1G SOD-123 3,000 / Operating and Storage Junction TRange emperature TJ, Tstg −55 to+150 C (Pb-Free) Tape & Reel SMMSD4148T1G* SOD-123 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (Pb-Free) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MMSD4148T3G SOD-123 10,000 / 1. Typical Values (Pb-Free) Tape & Reel SMMSD4148T3G* SOD-123 10,000 / **THERMAL CHARACTERISTICS** (Pb-Free) Tape & Reel ~~TC ™~té‘SCSYESC‘“E:SCSCS === ee~~ **Characteristic Symbol** ~~ee ee~~ **Max Unit** † For information on tape and reel specifications, Total Device Dissipation FR-5 Board (Note 2) PD 425 mW including part orientation and tape sizes, please  refer to our Tape and Reel Packaging Specification TDerate above 25 A = 25 C C 3.4 mW/C Brochure, BRD8011/D. ~~ee _~~ Thermal Resistance Junction-to-Ambient R JA 290 C/W ~~aOO~~ 

2. FR-5 = 1.0 oz Cu, 1.0 in[z] pad 

Publication Order Number: 

**1** 

 Semiconductor Components Industries, LLC, 2016 **November, 2025 − Rev. 14** 

**MMSD4148T1/D** 

**MMSD4148, SMMSD4148** 

**ELECTRICAL CHARACTERISTICS** (TA = 25 C unless otherwise noted) 

**Characteristic Symbol Min Max Unit** ~~a~~ **OFF CHARACTERISTICS** Reverse Breakdown Voltage V(BR) V (IBR = 100 A) 100 − ~~ee~~ Reverse Voltage Leakage Current I ~~ee~~ R (VR = 20 V) − 25 nA (VR = 75 V) − 5.0 A ~~ee~~ Forward Voltage ~~ee~~ VF mV (IF = 10 mA) − 1000 ~~ee~~ Diode Capacitance CD pF (VR = 0 V, f = 1.0 MHz) − 4.0 ~~ee~~ Reverse Recovery Time trr ns (IF = IR = 10 mA) (Figure 1) − 4.0 ~~a~~ Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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820 Q<br>+10 V 2 k100 H IF 0.1 F tr t p t IF<br>a Ak a<br>0.1 F m | 10% t rr t<br>DUT<br>50  OUTPUT 50  INPUT 90%<br>PULSE SAMPLING iR(REC) = 1 mA<br>GENERATOR OSCILLOSCOPE VR IR OUTPUT PULSE<br>INPUT SIGNAL<br>(IF = IR = 10 mA; measured<br>= = at iR(REC) = 1 mA)<br>1. A 2.0 k  variable resistor adjusted for a Forward Current (IF) of 10 mA.<br>2. Input pulse is adjusted so IR(peak) is equal to 10 mA.<br>3. tp » trr<br>**----- End of picture text -----**<br>


**Figure 1. Recovery Time Equivalent Test Circuit** 

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**MMSD4148, SMMSD4148** 

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100<br>rs a eee ee ee ee ee ee |<br>rn ee ee ee eee 0 ee 2 eee eee eee eee<br>A”<br>a 2 A” 4  A A<br>ne ee eee 2 2 eee eee ee e<br>10 p__| [| _—| = |f7 {7 |7 | | | _ |<br>TA = 85   C TA  C<br>a7AFFey 2 = -40 |<br>SS]<br>ee eee fee | f/|eeJ2 eee eee eee ||ee e<br>AYA A<br>1.0 eeeS eee<br>SSF<br>aPree A ee eeeSS TA = 25   C |<br>en eee) ee eee A a<br>ee es ee ee 2 ee<br>en | ee) eeee<br>0.1 Yr | 7; ff [7 | | [ | Tfe e<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>IF, FORWARD CURRENT (mA)<br>**----- End of picture text -----**<br>


**Figure 2. Forward Voltage** 

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10<br>a ee | TA = 150   C SS en es |<br>EE eee Se |<br>=¢— 1.0 eeaa| TA = 125   C a |<br>LS SS SS |<br>5 ee<br>lu a (1<br>> a a | TA = 85   C re ee ee<br>°& 0.1 ———————pf dd<br>2 _ea<br>Lu= 0.01 |er TA = 55   C Sseees<br>oe rr~- fj]es | |<br>asEE eee TA = 25   C eses SSRe<br>0.001 —————————es rese |<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

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0.68<br>0.64<br>0.60<br>0.56 PNETrT OP E_  LET<br>0.52 P| ff|__———EP pe} 4<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (VOLTS)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

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**3** 

**MMSD4148, SMMSD4148** 

**REVISION HISTORY** 

**Revision Description of Changes Date** 14 Rebranded the Data Sheet to **onsemi** format. 11/5/2025 ~~ee~~ This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SOD−123 2−LEAD, 1.60x2.69x1.16** CASE 425 ISSUE H 

DATE 29 FEB 2024 

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## **GENERIC** 

## **MARKING DIAGRAM*** 

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XXXM<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>


(Note: Microdot may be in either location) 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

STYLE 1: PIN 1. CATHODE 2. ANODE 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42927B** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SOD−123 2−LEAD, 1.60x2.69x1.16 PAGE 1 OF 1** 

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