SMMDL914T1G

MMDL914 

## High-Speed Switching Diode 

## **Features** 

- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

**www.onsemi.com** 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **MAXIMUM RATINGS** 

~~es~~ **Rating Symbol** ~~es~~ **Value** ~~Ge~~ **Unit** Reverse Voltage VR 100 V ~~es~~ Forward Current IF 200 mA ~~es~~ ~~**es** eeee~~ Non−Repetitive Peak Forward Surge IFSM(surge) 1.8 A Current 60 Hz ~~Fe~~ Repetitive Peak Forward Current IFRM 1.0 A (Note 2) ~~ee~~ Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25 ° C prior to surge) t = 1 s 36.0 t = 10 s | 18.0 t = 100 s 6.0 t = 1 ms 3.0 t = 10 ms 1.8 t = 100 ms 1.3 t = 1 s 1.0 **THERMAL CHARACTERISTICS Characteristic Symbol Max Unit** Total Device Dissipation FR-5 Board PD 200 mW TA = 25 ° C (Note 1) Derate above 25 ° C 1.57 mW/ ° C ~~eea~~ Thermal Resistance, R JA ° C/W Junction−to−Ambient 635 ~~ee es~~ Junction and Storage Temperature TJ, T ~~es~~ stg −55 to 150 ~~ee~~ ° C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. FR-4 Minimum Pad. 

2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25 ° C prior to surge. 

**SOD−323 CASE 477 STYLE 1** 

**==> picture [116 x 16] intentionally omitted <==**

**----- Start of picture text -----**<br>
1 2<br>CATHODE ANODE<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

**==> picture [146 x 89] intentionally omitted <==**

**----- Start of picture text -----**<br>
5D M<br>5D = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|MMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|SMMDL914T1G|SOD−323<br>(Pb−Free)|3,000 /<br>Tape & Reel|
|MMDL914T3G|SOD−323<br>(Pb−Free)|10,000 /<br>Tape & Reel|



- †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2013 **February, 2019 − Rev. 10** 

**MMDL914T1/D** 

**MMDL914** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||||
|---|---|---|---|---|
|**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||
|Reverse Breakdown Voltage<br>(IR= 100�Adc)|V(BR)|100|−|Vdc|
|Reverse Voltage Leakage Current<br>(VR= 20 Vdc)<br>(VR= 75 Vdc)|IR|−<br>−|25<br>5.0|nAdc<br>�Adc|
|Diode Capacitance<br>(VR= 0 V, f = 1.0 MHz)|CT|−|4.0|pF|
|Forward Voltage<br>(IF= 10 mAdc)|VF|−|1.0|Vdc|
|Reverse Recovery Time<br>(IF= IR= 10 mAdc) (Figure 1)|trr|−|4.0|ns|



**==> picture [484 x 130] intentionally omitted <==**

**----- Start of picture text -----**<br>
820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>D.U.T. 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br>


Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr 

**Figure 1. Recovery Time Equivalent Test Circuit** 

**www.onsemi.com** 

**2** 

**MMDL914** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [240 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>TA = 85°C<br>10<br>TA = -�40°C<br>1.0 TA = 25°C<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (V)<br>Figure 2. Forward Voltage<br>0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2 4 6 8<br>VR, REVERSE VOLTAGE (V)<br>IF, FORWARD CURRENT (mA)<br>CD, DIODE CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 4. Capacitance** 

**==> picture [239 x 170] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>TA = 150°C<br>TA = 125°C<br>1.0<br>TA = 85°C<br>0.1<br>TA = 55°C<br>0.01<br>TA = 25°C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (V)<br>A)<br>μ<br>IR, REVERSE CURRENT (<br>**----- End of picture text -----**<br>


**Figure 3. Leakage Current** 

**==> picture [240 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
40<br>Based on square wave currents<br>35 TJ = 25 ° C prior to surge<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.0001 0.001 0.01 0.1 1 10 100 1000<br>tp (mSec)<br> (A)<br>IFSM<br>**----- End of picture text -----**<br>


**Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values** 

**www.onsemi.com** 

**3** 

**MMDL914** 

## **PACKAGE DIMENSIONS** 

**SOD−323** CASE 477−02 ISSUE H 

**==> picture [216 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
HE<br>D<br>b 1 2 E<br>he<br>A3<br>A<br>L<br>C NOTE 5 A1<br>NOTE 3<br>**----- End of picture text -----**<br>


**==> picture [166 x 167] intentionally omitted <==**

**----- Start of picture text -----**<br>
NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. LEAD THICKNESS SPECIFIED PER L/F DRAWING<br>WITH SOLDER PLATING.<br>4. DIMENSIONS A AND B DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>5. DIMENSION L IS MEASURED FROM END OF RADIUS.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.80 0.90 1.00 0.031 0.035 0.040<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>A3 0.15 REF 0.006 REF<br>b 0.25 0.32 0.4 0.010 0.012 0.016<br>C 0.089 0.12 0.177 0.003 0.005 0.007<br>D 1.60 1.70 1.80 0.062 0.066 0.070<br>E 1.15 1.25 1.35 0.045 0.049 0.053<br>L 0.08 0.003<br>HE 2.30 2.50 2.70 0.090 0.098 0.105<br>STYLE 1:<br>PIN 1. CATHODE (POLARITY BAND)<br>2. ANODE<br>**----- End of picture text -----**<br>


## **SOLDERING FOOTPRINT*** 

**==> picture [100 x 85] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.63<br>0.025 — -t fe<br>0.83<br>0.033<br>1.60<br>0.063<br>2.85<br>0.112<br>**----- End of picture text -----**<br>


*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

## **PUBLICATION ORDERING INFORMATION** 

**LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada For additional information, please contact your local **Email** : orderlit@onsemi.com Sales Representative ◊ **www.onsemi.com MMDL914LT1/D** 

◊ **4** 

**MMDL914LT1/D**