SMMBD7000LT3G
Small Signal Diode, Dual Series, 100 V, 200 mA, 1.1 V, 4 ns, 500 mA
- Manufacturer: ONSEMI
- Product type: Small Signal Diodes
- Diode Configuration:Dual Series; Repetitive Reverse Voltage Vrrm Max:100V; Forward Current If(AV):200mA; Forward Voltage VF Max:1.1V; Reverse Recovery Time trr Max:4ns; Forward Surge
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SOT-23
- Diode Configuration: Dual Series
- Forward Voltage Max: 1.1V
- Forward Surge Current: 500mA
- Reverse Recovery Time: 4ns
- Average Forward Current: 200mA
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 100V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.028 € |
| Current stock | 1000+ |
| Lead time | 30 days |
## MMBD7000L, SMMBD7000L ## Dual Switching Diode ## **Features** - S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant **MAXIMUM RATINGS (EACH DIODE)** **SOT−23 (TO−236) Rating Symbol Value Unit CASE 318** Reverse Voltage VR 100 V **STYLE 11** Forward Current IF 200 mA 1 2 Forward Surge Current IFSM 1.6 A ANODE CATHODE (60 Hz @ 1 cycle) 3 CATHODE/ANODE Repetitive Peak Forward Current IFRM 0.5 A (Pulse Wave = 1 sec, Duty Cycle = 66%) ~~=~~ Stresses exceeding those listed in the Maximum Ratings table may damage the **MARKING DIAGRAM** device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. **MARKING DIAGRAM** M5C M 1 M5C = Specific Device Code M = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ## **THERMAL CHARACTERISTICS** **Characteristic Symbol Max Unit** 1 Total Device Dissipation FR−5 Board PD 225 mW (Note 1)TA = 25 ° C Derate above 25 ° C 1.8 mW/ ° C M5C = Specific Device Code M = Date Code* Thermal Resistance, Junction to R JA 556 ° C/W = Pb−Free Package Ambient ~~rr~~ (Note: Microdot may be in either location) Total Device Dissipation ~~ee~~ PD 300 mW *Date Code orientation and/or overbar may Alumina Substrate, (Note 2) vary depending upon manufacturing location. TA = 25 ° C Derate above 25 ° C 2.4 mW/ ° C **ORDERING INFORMATION** Thermal Resistance, R JA ° C/W ~~pT~~ Junction−to−Ambient ~~EE~~ 417 **Device Package Shipping**[†] Junction and Storage Temperature TJ, Tstg −55 to +150 ° C MMBD7000LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. SMMBD7000LT1G SOT−23 3,000 / (Pb−Free) Tape & Reel MMBD7000LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel SMMBD7000LT3G SOT−23 10,000 / (Pb−Free) Tape & Reel ~~=:~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: **MMBD7000LT1/D** **1** © Semiconductor Components Industries, LLC, 1994 **June, 2017 − Rev. 8** ## **MMBD7000L, SMMBD7000L** ## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) **(EACH DIODE)** |**ELECTRICAL CHARACTERISTICS**(TA= 25°C unless otherwise noted)**(EACH D**|**IODE)**|||| |---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||| |Reverse Breakdown Voltage<br>(I(BR)= 100�Adc)|V(BR)|100|−|Vdc| |Reverse Voltage Leakage Current<br>(VR= 50 Vdc)<br>(VR= 100 Vdc)<br>(VR= 50 Vdc, 125°C)|IR<br>IR2<br>IR3|−<br>−<br>−|1.0<br>3.0<br>100|�Adc| |Forward Voltage<br>(IF= 1.0 mAdc)<br>(IF= 10 mAdc)<br>(IF= 100 mAdc)|VF|0.55<br>0.67<br>0.75|0.7<br>0.82<br>1.1|Vdc| |Reverse Recovery Time<br>(IF= IR= 10 mAdc) (Figure 1)|trr|−|4.0|ns| |Capacitance (VR= 0 V)|C|−|1.5|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **==> picture [484 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> 820 �<br>IF<br>+10 V 2.0 k 0.1 �F tr t p t<br>100 �H IF 10% t rr t<br>0.1 �F<br>DUT 90%<br>50 � OUTPUT 50 � INPUT iR(REC) = 1.0 mA<br>IR<br>PULSE SAMPLING VR OUTPUT PULSE<br>GENERATOR OSCILLOSCOPE INPUT SIGNAL<br>(IF = IR = 10 mA; MEASURED<br>at iR(REC) = 1.0 mA)<br>**----- End of picture text -----**<br> Notes: 1. A 2.0 k � variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr **Figure 1. Recovery Time Equivalent Test Circuit** **www.onsemi.com** **2** **MMBD7000L, SMMBD7000L** ## **CURVES APPLICABLE TO EACH DIODE** **==> picture [241 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TA = 85°C TA = -40°C<br>10<br>TA = 25°C<br>1.0<br>0.1<br>0.2 0.4 0.6 0.8 1.0 1.2<br>VF, FORWARD VOLTAGE (VOLTS)<br>Figure 2. Forward Voltage<br>0.68<br>0.64<br>0.60<br>0.56<br>0.52<br>0 2.0 4.0 6.0 8.0<br>VR, REVERSE VOLTAGE (VOLTS)<br>, FORWARD CURRENT (mA)<br>IF<br>, DIODE CAPACITANCE (pF)<br>D<br>C<br>**----- End of picture text -----**<br> **Figure 4. Capacitance** **==> picture [240 x 384] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TA = 150°C<br>1.0 TA = 125°C<br>TA = 85°C<br>0.1<br>TA = 55°C<br>0.01<br>TA = 25°C<br>0.001<br>0 10 20 30 40 50<br>VR, REVERSE VOLTAGE (VOLTS)<br>Figure 3. Leakage Current<br>25<br>20<br>15<br>10<br>5<br>0<br>0.001 0.01 0.1 1 10 100 1000<br>tp, PULSE ON TIME (ms)<br>�<br>, REVERSE CURRENT ( A)<br>IR<br>, FORWARD SURGE MAX CURRENT (A)<br>IFSW<br>**----- End of picture text -----**<br> **Figure 5. Forward Surge Current** **www.onsemi.com** **3** **MMBD7000L, SMMBD7000L** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [462 x 328] intentionally omitted <==** **----- Start of picture text -----**<br> D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>a 3 = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 ° −−− 10 ° 0 ° −−− 10 °<br>A1 SIDE VIEW SEE VIEW C c STYLE 11:<br>PIN 1. ANODE<br>END VIEW 2. CATHODE<br>3. CATHODE−ANODE<br>RECOMMENDED<br>SOLDERING FOOTPRINT*<br>3X<br>2.90 _ 0.90<br>Lo | cr<br>3X 0.80 | LL L 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** Literature Distribution Center for ON Semiconductor USA/Canada 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center** For additional information, please contact your local **Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative ## **LITERATURE FULFILLMENT** : ◊ **www.onsemi.com** **MMBD7000LT1/D** **4**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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