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SMF3.3.TCT
TVS Diode, SMF, Unidirectional, 3.3 V, 8 V, SC-70, 5 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: SEMTECH
- Product type: TVS Diodes
- Product Range:SMF Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:3.3V; Clamping Voltage Vc Max:8V; Diode Case Style:SC-70; No. of Pins:5Pins; Breakdown Voltage Min:-; Breakdown Volt
- SVHC: No SVHC (15-Jan-2019)
- No. of Pins: 5Pins
- TVS Polarity: Unidirectional
- Product Range: SMF
- Qualification: -
- Diode Mounting: Surface Mount
- Diode Case Style: SC-70
- Clamping Voltage Max: 8V
- Reverse Standoff Voltage: 3.3V
- Maximum Breakdown Voltage: -
- Minimum Breakdown Voltage: -
- Operating Temperature Max: 125°C
- Peak Pulse Power Dissipation: 40W
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.482 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
SMF3.3 3.3 Volt TVS Array For ESD and Latch-Up Protection ## **PROTECTION PRODUCTS** ## Description The SMF series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. The SMF3.3 is a solid-state devices designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. ## Features - ESD protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) - Small package for use in portable electronics - Protects four I/O lines - Working voltage: 3.3V - Low leakage current - Low operating and clamping voltages - Solid-state EPD TVS technology ## Mechanical Characteristics - EIAJ SC70-5L package - Molding compound flammability rating: UL 94V-0 - Marking : Marking Code - Packaging : Tape and Reel The SMF3.3 may be used to meet the immunity requirements of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). The small SC70-5L package makes them ideal for use in portable electronics such as cell phones, PDAs, and notebook computers. ## Applications - Cellular Handsets and Accessories - Cordless Phones - Personal Digital Assistants (PDAs) - Notebooks and Handhelds - Portable Instrumentation - Digital Cameras - Peripherals - MP3 Players ## Circuit Diagram **==> picture [265 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 1 3 4 5<br>2<br>**----- End of picture text -----**<br> ## Schematic & PIN Configuration **==> picture [264 x 209] intentionally omitted <==** **----- Start of picture text -----**<br> 1 5<br>2<br>3 4<br>SC70-5L (Top View)<br>**----- End of picture text -----**<br> www.semtech.com Revision 01/15/08 1 SMF3.3 ## PROTECTION PRODUCTS ## Absolute Maximum Rating |PROTECTION PRODUCTS<br>Absolute Maximum Rating|PROTECTION PRODUCTS<br>Absolute Maximum Rating|||||||||| |---|---|---|---|---|---|---|---|---|---|---| |g<br>nit<br>a<br>R||||l<br>o<br>b<br>m<br>y<br>S||e<br>ul<br>a<br>V|||s<br>ti<br>n<br>U|| |0<br>2<br>/<br>8<br>=<br>p<br>t(<br>r<br>e<br>w<br>o<br>P<br>e<br>slu<br>P<br>k<br>a<br>e<br>P<br>µ )s||||P k<br>p||0<br>4|||stt<br>a<br>W|| |0<br>2<br>/<br>8<br>=<br>p<br>t(<br>t<br>n<br>e<br>rr<br>u<br>C<br>e<br>slu<br>P<br>k<br>a<br>e<br>P<br>µ )s||||I P<br>P||5|||A|| |)riA<br>(<br>2<br>-<br>4<br>-<br>0<br>0<br>0<br>1<br>6<br>C<br>EI<br>r<br>e<br>p<br>D<br>S<br>E<br>)tc<br>a<br>t<br>n<br>o<br>C<br>(<br>2<br>-<br>4<br>-<br>0<br>0<br>0<br>1<br>6<br>C<br>EI<br>r<br>e<br>p<br>D<br>S<br>E||||V<br>D<br>S<br>E||0<br>2<br>5<br>1|||V<br>k|| |e<br>r<br>u<br>t<br>a<br>r<br>e<br>p<br>m<br>e<br>T<br>g<br>nir<br>e<br>dlo<br>S<br>d<br>a<br>e<br>L||||TL||)s<br>d<br>n<br>o<br>c<br>e<br>s<br>0<br>1<br>(<br>0<br>6<br>2|||oC|| |e<br>r<br>u<br>t<br>a<br>r<br>e<br>p<br>m<br>e<br>T<br>g<br>nit<br>a<br>r<br>e<br>p<br>O||||TJ||5<br>2<br>1<br>+<br>o<br>t<br>5<br>5<br>-|||oC|| |e<br>r<br>u<br>t<br>a<br>r<br>e<br>p<br>m<br>e<br>T<br>e<br>g<br>a<br>r<br>o<br>t<br>S||||T<br>G<br>T<br>S||0<br>5<br>1<br>+<br>o<br>t<br>5<br>5<br>-|||oC|| |||||||||||| |Electrical Characteristics||||||||||| |||||||||||| |3<br>.<br>3<br>F<br>M<br>S||||||||||| |r<br>e<br>t<br>e<br>m<br>a<br>r<br>a<br>P|l<br>o<br>b<br>m<br>y<br>S||s<br>n<br>oiti<br>d<br>n<br>o<br>C||m<br>u<br>m<br>i<br>n<br>i<br>M||l<br>a<br>ci<br>p<br>y<br>T|m<br>u<br>m<br>ix<br>a<br>M||s<br>ti<br>n<br>U| |e<br>g<br>a<br>tlo<br>V<br>ff<br>O<br>-<br>d<br>n<br>a<br>t<br>S<br>e<br>sr<br>e<br>v<br>e<br>R|V<br>M<br>W<br>R|||||||3<br>.<br>3||V| |e<br>g<br>a<br>tlo<br>V<br>h<br>g<br>u<br>o<br>r<br>h<br>T-<br>h<br>c<br>n<br>u<br>P|V T<br>P||I T<br>P<br>A<br>µ<br>2<br>=||5<br>.<br>3|||||V| |e<br>g<br>a<br>tlo<br>V<br>k<br>c<br>a<br>B<br>-<br>p<br>a<br>n<br>S|V B<br>S||I B<br>S<br>A<br>m<br>0<br>5<br>=||8<br>.<br>2|||||V| |t<br>n<br>e<br>rr<br>u<br>C<br>e<br>g<br>a<br>k<br>a<br>e<br>L<br>e<br>sr<br>e<br>v<br>e<br>R|IR||V<br>M<br>W<br>R<br>V<br>3<br>.<br>3<br>=||||5<br>0<br>.<br>0|5<br>.<br>0||A<br>µ| |e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC|VC||I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>1<br>=|||||5<br>.<br>5||V| |e<br>g<br>a<br>tlo<br>V<br>g<br>nip<br>m<br>alC|VC||I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>5<br>=|||||0<br>.<br>8||V| |e<br>g<br>a<br>tlo<br>V<br>d<br>r<br>a<br>w<br>r<br>o<br>F<br>e<br>d<br>oi<br>D<br>g<br>nir<br>e<br>e<br>t<br>S|VF||I P<br>P<br>s<br>µ<br>0<br>2<br>/<br>8<br>=<br>p<br>t<br>,<br>A<br>1<br>=<br>O<br>/I<br>y<br>n<br>a<br>o<br>t<br>d<br>n<br>u<br>o<br>r<br>G|||||4<br>.<br>2||V| |e<br>c<br>n<br>a<br>tic<br>a<br>p<br>a<br>C<br>n<br>oitc<br>n<br>u<br>J|Cj||d<br>n<br>a<br>nip<br>O<br>/I<br>h<br>c<br>a<br>E<br>d<br>n<br>u<br>o<br>r<br>G<br>VR<br>z<br>H<br>M<br>1<br>=<br>f<br>,V<br>0<br>=||||5<br>2|0<br>3||F<br>p| ||||O<br>/I<br>o<br>t<br>O<br>/I<br>VR<br>z<br>H<br>M<br>1<br>=<br>f<br>,V<br>0<br>=||||2<br>1|||F<br>p| www.semtech.com 2008 Semtech Corp. 2 SMF3.3 ## PROTECTION PRODUCTS ## Typical Characteristics ## Non-Repetitive Peak Pulse Power vs. Pulse Time **==> picture [260 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.1 1 10 100 1000<br>Pulse Duration - tp (µs)<br> (kW)<br>PP<br>Peak Pulse Power - P<br>**----- End of picture text -----**<br> ## Pulse Waveform **==> picture [235 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>Waveform<br>100<br> Parameters:<br>90 tr = 8µs<br>80 td = 20µs<br>70<br>e [-t]<br>60<br>50<br>40 td = I PP /2<br>30<br>20<br>10<br>0<br>0 5 10 15 20 25 30<br>Time ( µ s)<br>PP<br>Percent of I<br>**----- End of picture text -----**<br> ## Forward Voltage vs. Forward Current **==> picture [260 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 7.00<br>6.00<br>5.00<br>4.00<br>3.00<br>2.00 Waveform<br> Parameters:<br>tr = 8µs<br>1.00<br>td = 20µs<br>0.00<br>0 1 2 3 4 5 6 7<br>Forward Current - IF (A)<br> (V)Forward Voltage- VF<br>**----- End of picture text -----**<br> ## Power Derating Curve **==> picture [237 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 25 50 75 100 125 150<br>Ambient Temperature - TA ( [o] C)<br> PP<br>% of Rated Power or I<br>**----- End of picture text -----**<br> ## Clamping Voltage vs. Peak Pulse Current **==> picture [260 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 10.00<br>8.00<br>6.00<br>4.00<br>Waveform<br> Parameters:<br>2.00 tr = 8µs<br>td = 20µs<br>0.00<br>0 1 2 3 4 5 6 7<br>Peak Pulse Current - IPP (A)<br> (V)Clamping Voltage - VC<br>**----- End of picture text -----**<br> Capacitance vs. Reverse Voltage **==> picture [260 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>f = 1MHz<br>L to G<br>20<br>L to L<br>10<br>0<br>0 1 2 3<br>Reverse Voltage - VR (V)<br> (pF)Capacitance - Cj<br>**----- End of picture text -----**<br> www.semtech.com 2008 Semtech Corp. 3 SMF3.3 ## PROTECTION PRODUCTS ## Typical Characteristics ## Insertion Loss S21, I/O to Ground **==> picture [259 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> CH1S21 LOG 3 dB/REF 0 dB<br>START.030 MHz STOP 3000.000000MHz<br>**----- End of picture text -----**<br> ## Insertion Loss S21, I/O to I/O **==> picture [259 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> CH1 S21 LOG 3 dB/ REF 0 dB<br>START. 030 MHz STOP 3000.000000MHz<br>**----- End of picture text -----**<br> ## Analog Crosstalk (I/O to I/O) **==> picture [259 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> CH1S21 LOG 20 dB/ REF 0 dB<br>START. 030MHz STOP 3000.000000MHz<br>**----- End of picture text -----**<br> www.semtech.com 4 2008 Semtech Corp. SMF3.3 ## PROTECTION PRODUCTS ## Applications Information ## Device Connection for Protection of Four Data Lines The SMF3.3 is designed to protect up to four unidirectional data lines. The device is connected as follows: 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4, and 5 to the data lines. Pin 2 is connected to ground. The ground connection should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Due to the “snap-back” characteristics of the low voltage TVS, it is not recommended that any of the I/O lines be directly connected to a DC source greater than snap-back votlage (VSB) as the device can latch on as described below. ## EPD TVS Characteristics The SMF3.3 is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the SMF3.3 can effectively operate at 3.3V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. Since the EPD TVS devices use a 4-layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a high-impedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. ## SMF Circuit Diagram **==> picture [187 x 153] intentionally omitted <==** **----- Start of picture text -----**<br> 1 3 4 5<br>2<br>**----- End of picture text -----**<br> ## Protection of Four Unidirectional Lines **==> picture [204 x 159] intentionally omitted <==** When the TVS is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristics due to its structures. This point is defined on the curve by the snap-back voltage (VSB) and snap-back current (ISB). To return to a non-conducting state, the current through the device must fall below the ISB (approximately <50mA) and the voltage must fall below the VSB (normally 2.8 volts for a 3.3V device). If a 3.3V TVS is connected to 3.3V DC source, it will never fall below the snap-back voltage of 2.8V and will therefore stay in a conducting state. www.semtech.com 2008 Semtech Corp. 5 SMF3.3 ## PROTECTION PRODUCTS ## Applications Information **==> picture [540 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> SMF3.3<br>Typical Application Diagram<br>**----- End of picture text -----**<br> ## Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: - Place the TVS near the input terminals or connectors to restrict transient coupling. - Minimize the path length between the TVS and the protected line. - Minimize all conductive loops including power and ground loops. - The ESD transient return path to ground should be kept as short as possible. ## Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. A matte tin finish is composed of 100% tin solder with large grains. Since the solder volume on the leads is small compared to the solder paste volume that is placed on the land pattern of the PCB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. - Never run critical signals near board edges. - Use ground planes whenever possible. www.semtech.com 2008 Semtech Corp. 6 SMF3.3 ## PROTECTION PRODUCTS ## Outline Drawing - SC-70 5L **==> picture [468 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> DIMENSIONS<br>A DIM INCHES MILLIMETERS<br>MIN NOM MAX MIN NOM MAX<br>e1 D H A - - .043 - - 1.10<br>N A1 .000 - .004 0.00 - 0.10<br>A2 .028 .035 .039 0.70 0.90 1.00<br>2X E/2 PLANEGAGE c bc .003.006 -- .012.009 0.150.08 -- 0.300.22<br>EI E D .075 .079 .083 1.90 2.00 2.10<br>0.15 L E1 .045 .049 .053 1.15 1.25 1.35<br>ccc C 1 2 (L1) 01 Ee .083 BSC.026 BSC 2.10 BSC0.65 BSC<br>2X N/2 TIPS e DETAIL A e1L .010 .014.051 .018 0.261.30 BSC0.36 0.46<br>B L1 (.017) (0.42)<br>N 5 5<br>01 0° - 8° 0° - 8°<br>D aaa .004 0.10<br>bbb .004 0.10<br>aaa C ccc .012 0.30<br>A2 A SEE DETAIL A<br>SEATING SIDE VIEW<br>PLANE<br>C A1<br>bxN<br>bbb C A-B D<br>**----- End of picture text -----**<br> NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS AND TO BE DETERMINED AT DATUM PLANE-A-B-H- 3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MO-203, VARIATION AA. ## Land Pattern - SC-70 5L **==> picture [540 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>DIMENSIONS<br>DIM INCHES MILLIMETERS<br>C (.073) (1.85)<br>G .039 1.00<br>C G Z<br>P .026 0.65<br>X .016 0.40<br>Y Y .033 0.85<br>Z .106 2.70<br>P<br>NOTES:<br>1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY.<br>CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR<br>COMPANY'S MANUFACTURING GUIDELINES ARE MET.<br>**----- End of picture text -----**<br> www.semtech.com 2008 Semtech Corp. 7 SMF3.3 ## PROTECTION PRODUCTS ## Marking Codes **==> picture [182 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> Marking<br>Patr Number<br>Code<br>SMF3.3 F03<br>5 4<br>F03<br>1 2 3<br>**----- End of picture text -----**<br> ## Ordering Information |r<br>e<br>b<br>m<br>u<br>N<br>tr<br>a<br>P|h<br>si<br>ni<br>F<br>d<br>a<br>e<br>L|r<br>e<br>p<br>y<br>t<br>Q<br>l<br>e<br>e<br>R|e<br>zi<br>S<br>l<br>e<br>e<br>R| |---|---|---|---| |C<br>T.<br>3<br>.<br>3<br>F<br>M<br>S|b<br>P<br>n<br>S|0<br>0<br>0<br>,<br>3|h<br>c<br>nI<br>7| |T<br>C<br>T.<br>3<br>.<br>3<br>F<br>M<br>S|e<br>e<br>rf<br>b<br>P|0<br>0<br>0<br>,<br>3|h<br>c<br>nI<br>7| ## Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 www.semtech.com 2008 Semtech Corp. 8
Updated at June 1, 2026
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