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SMF05CT1G
TVS Diode, SMF, Unidirectional, 5 V, 12.5 V, SC-88, 6 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: TVS Diodes
- Product Range:SMF Series; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:5V; Clamping Voltage Vc Max:12.5V; Diode Case Style:SC-88; No. of Pins:6Pins; Breakdown Voltage Mi
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- TVS Polarity: Unidirectional
- Product Range: SMF
- Qualification: AEC-Q101
- Diode Mounting: Surface Mount
- Diode Case Style: SC-88
- Clamping Voltage Max: 12.5V
- Reverse Standoff Voltage: 5V
- Maximum Breakdown Voltage: 7.2V
- Minimum Breakdown Voltage: 6.2V
- Operating Temperature Max: 125°C
- Peak Pulse Power Dissipation: 100W
| Delivery and price | |
|---|---|
| Units per pack | 1500 |
| Price | 0.102 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G ## 5-Line Transient Voltage Suppressor Array This 5−line voltage transient suppressor array is designed for application requiring transient voltage protection capability. It is intended for use in over−transient voltage and ESD sensitive equipment such as computers, printers, automotive electronics, networking communication and other applications. This device features a monolithic common anode design which protects five independent lines in a single SC−88 package. **http://onsemi.com** **SC−88 FIVE TRANSIENT VOLTAGE SUPPRESSOR 100 W PEAK POWER** ## **Features** - Protects up to 5−Line in a Single SC−88 Package - Peak Power Dissipation − 100 W (8 x 20 s Waveform) - ESD Rating of Class 3B (Exceeding 8 kV) per Human Body Model and Class C (Exceeding 400 V) per Machine Model. - Compliance with IEC 61000−4−2 (ESD) 15 kV (Air), 8 kV (Contact) **==> picture [44 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> SC−88<br>CASE 419B<br>STYLE 24<br>**----- End of picture text -----**<br> ## **PIN ASSIGNMENT** - Flammability Rating of UL 94 V−0 - SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable - Pb−Free Packages are Available* **==> picture [134 x 57] intentionally omitted <==** **----- Start of picture text -----**<br> PIN1. CATHODE<br>1 6 2. ANODE<br>3. CATHODE<br>2 5<br>4. CATHODE<br>5. CATHODE<br>3 4<br>6. CATHODE<br>**----- End of picture text -----**<br> ## **Applications** - Hand−Held Portable Applications ## **MARKING DIAGRAM** - Networking and Telecom - Automotive Electronics **==> picture [122 x 138] intentionally omitted <==** **----- Start of picture text -----**<br> 6 et<br>XX [M]<br>1<br>XX = Specific Device Code<br>6J = SMF05C<br>6K = SZSMF12C/SMF12C<br>6L = SMF15C<br>6M= SMF24C<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br> - Serial and Parallel Ports - Notebooks, Desktops, Servers **MAXIMUM RATINGS** (TJ = 25C unless otherwise specified) |**Symbol**<br>~~a~~|**Rating**<br>|**Value**<br>|**Unit**<br>| |---|---|---|---| |PPK1<br>~~pf~~|Peak Power Dissipation<br>8 x 20 s Double Exponential Waveform<br>(Note 1)<br>~~pf~~|100<br>~~pf~~|W<br>~~pf~~| |TJ<br>~~———————r—e~~|Operating Junction Temperature Range<br>~~———————r—e~~|−40 to 125<br>~~———————r—e~~|C<br>~~———————r—e~~| |TSTG<br>~~———————r—e~~|Storage Temperature Range<br>~~———————r—e~~|−55 to 150<br>~~———————r—e~~|C<br>~~———————r—e~~| |TL<br>~~[Tr~~|Lead Solder Temperature (10 s)<br>~~[Tr~~|260<br>~~[Tr~~|C<br>~~[Tr~~| |ESD<br>~~[Tr~~|Human Body Model (HBM)<br>Machine Model (MM)<br>IEC 61000−4−2 Air (ESD)<br>IEC 61000−4−2 Contact (ESD)<br>~~[Tr~~|16000<br>400<br>15000<br>15000<br>~~[Tr~~|V<br>~~[Tr~~| ## **ORDERING INFORMATION** See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: **1** Semiconductor Components Industries, LLC, 2012 **February, 2012 − Rev. 4** **SMF05C/D** **SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G** **SMF05CT1G ELECTRICAL CHARACTERISTICS** (TJ = 25C unless otherwise specified) |**SMF05CT1G ELECTRICAL CHAR**|**ACTERISTI**|**CS**(TJ= 25C unless otherwise specifie|d)|||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Working Voltage|VRWM|(Note 2)|||5.0|V| |Breakdown Voltage|VBR|IT= 1 mA, (Note 3)|6.2||7.2|V| |Reverse Leakage Current|IR|VRWM= 5 V||0.07|5.0|�A| |Clamping Voltage|VC|IPP= 5 A (8 x 20�s Waveform)|||9.8|V| |Clamping Voltage|VC|IPP= 8 A (8 x 20�s Waveform)|||12.5|V| |Maximum Peak Pulse Current|IPP|8 x 20�s Waveform|||8.0|A| |Capacitance|CJ|VR= 0 V, f = 1 MHz (Line to GND)||80|130|pF| **SMF12CT1G ELECTRICAL CHARACTERISTICS** (TJ = 25C unless otherwise specified) |**SMF12CT1G ELECTRICAL CHAR**|**ACTERISTI**|**CS**(TJ= 25C unless otherwise specifie|d)|||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Working Voltage|VRWM|(Note 2)|||12|V| |Breakdown Voltage|VBR|IT= 1 mA, (Note 3)|13.3||15|V| |Reverse Leakage Current|IR|VRWM= 12 V||0.01|0.1|�A| |Clamping Voltage|VC|IPP= 3 A (8 x 20�s Waveform)|||21|V| |Clamping Voltage|VC|IPP= 6 A (8 x 20�s Waveform)|||23|V| |Maximum Peak Pulse Current|IPP|8 x 20�s Waveform|||6.0|A| |Capacitance|CJ|VR= 0 V, f = 1 MHz (Line to GND)||40|60|pF| **SMF15CT1G ELECTRICAL CHARACTERISTICS** (TJ = 25C, unless otherwise specified) |**SMF15CT1G ELECTRICAL CHAR**|**ACTERISTI**|**CS**(TJ= 25C, unless otherwise specifie|d)|||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Working Voltage|VRWM|(Note 2)|||15|V| |Breakdown Voltage|VBR|IT= 1 mA, (Note 3)|17||19|V| |Reverse Leakage Current|IR|VRWM= 15 V||0.01|1.0|�A| |Clamping Voltage|VC|IPP= 1 A (8 x 20�s Waveform)|||23|V| |Clamping Voltage|VC|IPP= 5 A (8 x 20�s Waveform)|||29|V| |Maximum Peak Pulse Current|IPP|8 x 20�s Waveform|||5.0|A| |Capacitance|CJ|VR= 0 V, f = 1 MHz (Line to GND)||33|45|pF| ## **SMF24CT1G ELECTRICAL CHARACTERISTICS** (TJ = 25C, unless otherwise specified) |**SMF24CT1G ELECTRICAL CHAR**|**ACTERISTI**|**CS**(TJ= 25C, unless otherwise specifie|d)|||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |Reverse Working Voltage|VRWM|(Note 2)|||24|V| |Breakdown Voltage|VBR|IT= 1 mA, (Note 3)|26.7||32|V| |Reverse Leakage Current|IR|VRWM= 24 V||0.01|1.0|�A| |Clamping Voltage|VC|IPP= 1 A (8 x 20�s Waveform)|||40|V| |Clamping Voltage|VC|IPP= 2.5 A (8 x 20�s Waveform)|||44|V| |Maximum Peak Pulse Current|IPP|8 x 20�s Waveform|||2.5|A| |Capacitance|CJ|VR= 0 V, f = 1 MHz (Line to GND)||21|25|pF| 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Include SZ-prefix devices where applicable. **http://onsemi.com** **2** **SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G** ## **TYPICAL PERFORMANCE CURVES** **==> picture [136 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> (TJ = 25C unless otherwise specified)<br>**----- End of picture text -----**<br> **==> picture [491 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>tr PEAK VALUE IRSM @ 8 � s<br>90 90<br>80 80 PULSE WIDTH (tP) IS DEFINED<br>AS THAT POINT WHERE THE<br>70 70 PEAK CURRENT DECAY = 8 � s<br>60 60<br>HALF VALUE IRSM/2 @ 20 � s<br>50 50<br>40 40<br>30 30<br>tP<br>20 20<br>10 10<br>00 25 50 75 100 125 150 175 200 0 0 20 40 60 80<br>TA, AMBIENT TEMPERATURE ( C) t, TIME ( � s)<br>Figure 1. Pulse Derating Curve Figure 2. 8 20 � s Pulse Waveform<br>100 100<br>SMF24CT1G<br>SMF05CT1G<br>SMF15CT1G<br>SMF12CT1G SMF12CT1G<br>SMF05CT1G SMF15CT1G<br>10 10 SMF24CT1 G<br>1 1<br>0 5 10 15 0 5 10 15 20 25<br>IPP, PEAK PULSE CURRENT (A) VBR, REVERSE VOLTAGE (V)<br>PEAK POWER DISSIPATION (%) % OF PEAK PULSE CURRENT<br>, CLAMPING VOLTAGE (V)<br>CLAMP JUNCTION CAPACITANCE (pF)<br>V<br>**----- End of picture text -----**<br> **Figure 3. Clamping Voltage vs Peak Pulse Current** **Figure 4. Junction Capacitance vs Reverse Voltage** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |SMF05CT1G|SC−88<br>(Pb−Free)|3,000 / Tape & Reel| |SMF05CT2G*|SC−88<br>(Pb−Free)|3,000 / Tape & Reel| |SMF12CT1G|SC−88<br>(Pb−Free)|3,000 / Tape & Reel| |SMF15CT1G|SC−88<br>(Pb−Free)|3,000 / Tape & Reel| |SMF24CT1G|SC−88<br>(Pb−Free)|3,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The “T2” suffix refers to an alternate tape & reel orientation. **http://onsemi.com** **3** **SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G** ## **PACKAGE DIMENSIONS** **==> picture [452 x 221] intentionally omitted <==** **----- Start of picture text -----**<br> SC−88/SC70−6/SOT−363<br>D CASE 419B−02<br>ISSUE W<br>e<br>NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: INCH.<br>6 5 4 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.<br>HE −E− MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>1 2 3 A 0.80 0.95 1.10 0.031 0.037 0.043<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>Une A3 0.20 REF 0.008 REF<br>rp b ee 0.10 0.21 0.30 0.004 0.008 0.012<br>b 6 PL C 0.10 0.14 0.25 0.004 0.005 0.010<br>ae —— D 1.80 2.00 2.20 0.070 0.078 0.086<br>0.2 (0.008) M E M E 1.15 1.25 1.35 0.045 0.049 0.053<br>e el o e 0.65 BSC o 0.026 BSC<br>A3 L 0.10 0.20 0.30 0.004 0.008 0.012<br>HE 2.00 2.10 2.20 0.078 0.082 0.086<br>i a<br>C STYLE 24:<br>PIN 1. CATHODE<br>A 2. ANODE<br> 3. CATHODE<br>Mit, Shs 4. CATHODE<br> 5. CATHODE<br>L A1 L tL 6. CATHODE<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [223 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 0.50<br>am 0.0197 |<br>0.025 7 0.65<br>0.65<br>oo 0.025 GH<br>0.40<br>0.0157<br>HE<br>——— 1.9<br>0.0748 SCALE 20:1 mm<br>inches<br>**----- End of picture text -----**<br> ## **SC−88/SC70−6/SOT−363** *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **ON Semiconductor** and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA **Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Email** : orderlit@onsemi.com **N. American Technical Support** : 800−282−9855 Toll Free USA/Canada **ON Semiconductor Website** : **www.onsemi.com** **Europe, Middle East and Africa Technical Support: Order Literature** : http://www.onsemi.com/orderlit Phone: 421 33 790 2910 **Japan Customer Focus Center** For additional information, please contact your local Phone: 81−3−5817−1050 Sales Representative **http://onsemi.com** **SMF05C/D** **4**
Updated at June 1, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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