SMBT3946DW1T1G

Bipolar Transistor Array, Complementary NPN and PNP, 40 V, 40 V, 200 mA, 200 mA, 150 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:150mW; DC Collector Current:200mA; DC Current Gain hFE:30hFE; Transistor Case Style:SOT
MSL: MSL 1 - Unlimited
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: AEC-Q101
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 150mW
Power Dissipation PNP: 150mW
Transistor Case Style: SOT-363
Transition Frequency NPN: 300MHz
Transition Frequency PNP: 250MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 30hFE
DC Current Gain hFE Min PNP: 30hFE
Continuous Collector Current NPN: 200mA
Continuous Collector Current PNP: 200mA
Collector Emitter Voltage Max NPN: 40V
Collector Emitter Voltage Max PNP: 40V

Delivery and price
Units per pack	5000
Price	0.03 €
Current stock	1000+
Lead time	7 days

Datasheet

Updated at March 10, 2026