SMBJ70CA.
TVS Diode, SMBJ, Bidirectional, 70 V, 113 V, DO-214AA (SMB), 2 Pins
- Manufacturer: ONSEMI
- Product type: TVS Diodes
- No. of Pins: 2Pins
- TVS Polarity: Bidirectional
- Product Range: SMBJ
- Diode Mounting: Surface Mount
- Diode Case Style: DO-214AA (SMB)
- Clamping Voltage Max: 113V
- Reverse Standoff Voltage: 70V
- Maximum Breakdown Voltage: 86V
- Minimum Breakdown Voltage: 77.8V
- Operating Temperature Max: 150°C
- Peak Pulse Power Dissipation: 600W
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 0.07 € |
| Current stock | 10+ |
| Lead time | 30 days |
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [64 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> November 2014<br>**----- End of picture text -----**<br> # **SMBJ5V0(C)A - SMBJ170(C)A 600 Watt Transient Voltage Suppressors** ## **Features** - Glass-Passivated Junction - 600 W Peak Pulse Power Capability - on 10/1000 μ s Waveform. - Excellent Clamping Capability - Low-Incremental Surge Resistance - Fast Response Time: Typically Less than 1.0 ps from 0 V - to BV minimum for Unidirectional and 5.0 ns for Bidirectional - Typical IR Less than 1.0 μ A Above 10 V **==> picture [67 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> SMB/DO-214AA<br>**----- End of picture text -----**<br> Band denotes cathode on unidirectional devices only. No band on bi-directional devices. Bi-directional types have CA suffix where electrical characteristics apply in both directions suitable for bi-directional applications. - UL Certificate #E258596 ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PPPM|Peak Pulse Power Dissipation on 10/1000μs Waveform|600|W| |IPPM|Peak Pulse Current on 10/1000μs Waveform|See Table|A| |IFSM|Non-Repetitive Peak Forward Surge Current<br>Superimposed on Rated Load (JEDEC Method)(1)|100|A| |TSTG|Storage Temperature Range|-55 to 150|°C| |TJ|Operating Junction Temperature Range|-55 to 150|°C| ## **Note:** 1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**<br>**Bi-Directional (C)**<br>**Device**|**Part**<br>**Marking**(2)|**Reverse**<br>**Stand-Off**<br>**Voltage**<br>**VRWM (V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Test**<br>**Current**<br>**IT (mA)**|**Clamping**<br>**Voltage**<br>**at IPPM**<br>**VC (V)**|**Peak Pulse**<br>**Current**<br>**IPPM (A)**|**Reverse**<br>**Leakage**<br>**at VRWM**<br>**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ5V0(C)A|KE|5.0|6.40|7.00|10|9.2|65.2|800| |SMBJ6V0(C)A|KG|6.0|6.67|7.37|10|10.3|58.3|800| |SMBJ6V5(C)A|KK|6.5|7.22|7.98|10|11.2|53.6|500| |SMBJ7V0(C)A|KM|7.0|7.78|8.60|10|12.0|50.0|200| |SMBJ7V5(C)A|KP|7.5|8.33|9.21|1|12.9|46.5|100| |SMBJ8V0(C)A|KR|8.0|8.89|9.83|1|13.6|44.1|50| |SMBJ8V5(C)A|KT|8.5|9.44|10.4|1|14.4|41.7|20| |SMBJ9V0(C)A|KV|9.0|10.0|11.1|1|15.4|39.0|10| |SMBJ10(C)A|KX|10|11.1|12.8|1|17.0|35.3|5| |SMBJ11(C)A|KZ|11|12.2|13.5|1|18.2|33.0|5| |SMBJ12(C)A|LE|12|13.3|14.7|1|19.9|30.2|5| |SMBJ13(C)A|LG|13|14.4|15.9|1|21.5|27.9|5| |SMBJ14(C)A|LK|14|15.6|17.2|1|23.2|25.9|5| |SMBJ15(C)A|LM|15|16.7|18.5|1|24.4|24.6|5| |SMBJ16(C)A|LP|16|17.8|19.7|1|26.0|23.1|5| |SMBJ17(C)A|LR|17|18.9|20.9|1|27.6|21.7|5| |SMBJ18(C)A|LT|18|20.0|22.1|1|29.2|20.5|5| |SMBJ20(C)A|LV|20|22.2|24.5|1|32.4|18.5|5| |SMBJ22(C)A|LX|22|24.4|26.9|1|35.5|16.9|5| |SMBJ24(C)A|LZ|24|26.7|29.5|1|38.9|15.4|5| |SMBJ26(C)A|ME|26|28.9|31.9|1|42.1|14.3|5| |SMBJ28(C)A|MG|28|31.1|34.4|1|45.4|13.2|5| |SMBJ30(C)A|MK|30|33.3|36.8|1|48.4|12.4|5| |SMBJ33(C)A|MM|33|36.7|40.6|1|53.3|11.3|5| |SMBJ36(C)A|MP|36|40.0|44.2|1|58.1|10.3|5| |SMBJ40(C)A|MR|40|44.4|49.1|1|64.5|9.3|5| |SMBJ43(C)A|MT|43|47.8|52.8|1|69.4|8.6|5| |SMBJ45(C)A|MV|45|50.0|55.3|1|72.7|8.3|5| |SMBJ48(C)A|MX|48|53.3|58.9|1|77.4|7.8|5| |SMBJ51(C)A|MZ|51|56.7|62.7|1|82.4|7.3|5| |SMBJ54(C)A|NE|54|60.0|66.3|1|87.1|6.9|5| |SMBJ58(C)A|NG|58|64.4|71.2|1|93.6|6.4|5| |SMBJ60(C)A|NK|60|66.7|73.7|1|96.8|6.2|5| |SMBJ64(C)A|NM|64|71.1|78.6|1|103.0|5.8|5| |SMBJ70(C)A|NP|70|77.8|86.0|1|113.0|5.3|5| |SMBJ75(C)A|NR|75|83.3|92.1|1|121.0|5.0|5| |SMBJ78(C)A|NT|78|86.7|95.8|1|126.0|4.8|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 2 ## **Electrical Characteristics** (Continued) Values are at TA = 25°C unless otherwise noted. |**Uni-Directional**<br>**Bi-Directional (C)**<br>**Device**|**Part**<br>**Marking**(2)|**Reverse**<br>**Stand-Off**<br>**Voltage**<br>**VRWM (V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Breakdown**<br>**Voltage**<br>**VBR(V)**|**Test**<br>**Current**<br>**IT (mA)**|**Clamping**<br>**Voltage**<br>**at IPPM**<br>**VC (V)**|**Peak Pulse**<br>**Current**<br>**IPPM (A)**|**Reverse**<br>**Leakage**<br>**at VRWM**<br>**IR (**μ**A)**(3)| |---|---|---|---|---|---|---|---|---| ||||**Min.**|**Max.**||||| |SMBJ85(C)A|NV|85|94.4|104.0|1|137.0|4.4|5| |SMBJ90(C)A|NX|90|100.0|111.0|1|146.0|4.1|5| |SMBJ100(C)A|NZ|100|111.0|123.0|1|162.0|3.7|5| |SMBJ110(C)A|PE|110|122.0|135.0|1|177.0|3.4|5| |SMBJ120(C)A|PG|120|133.0|147.0|1|193.0|3.1|5| |SMBJ130(C)A|PK|130|144.0|159.0|1|209.0|2.9|5| |SMBJ150(C)A|PM|150|167.0|185.0|1|243.0|2.5|5| |SMBJ160(C)A|PP|160|178.0|197.0|1|259.0|2.3|5| |SMBJ170(C)A|PR|170|189.0|209.0|1|275.0|2.2|5| ## **Notes:** 2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices. 3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled. © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 3 ## **Typical Performance Characteristics** **==> picture [418 x 505] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br> T = 25 C A º 75<br>10 PSHE CSE YF | YN | J [ ff]<br>UAT TIM [TIM uy LT PT INE Ey<br>Simca SU 50 SEEN<br>1<br>25<br>EE ee<br>Aa 0<br>0.1 0 25 50 75 100 125 150 175 200<br>0.0001 0.001 0.01 0.1 1 10 AMBIENT TEMPERATURE ( C)º<br>PULSE WIDTH (ms)<br>Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve<br>150 oF| fT Pulse Width T = 25 C A º (td) is Defined _ 60004000 -—+ T = 25 C f = 1.0 MHz A º<br>Hel tf = 10 μ sec as the Point Where the Peak 2000 SS Visg = 50m Vp-p<br> Peak Value Current Decays to 50% of Ipp Measured at<br>100 Ippm | 1000 Se Zero Bias<br>500<br>Ppt} Half Value-I +++ pp 4 SH<br> Measured at<br> 2 200<br>IN op a Stand-Off PATS<br>50 10/1000 μ sec Waveform 100 Voltage (V RWM)<br>as Defined by R.E.A.<br>50<br> e-kt<br>PEt td fF Tf Td 20 a<br>0 a 10 PELTTEEE EEE<br>0 1 2 3 4 1 5 10 50 100 200<br>TIME (ms) REVERSE VOLTAGE (V)<br>Figure 3. Pulse Waveform Figure 4. Junction Capacitance<br>200<br> T = T maxA A<br> 8.3ms Single Half Sine-Wave<br> JEDEC Method<br>100<br>ee<br>rr ee a ee ee ee<br>PR<br>50 a<br>CPI<br>20<br>10<br>1 2 5 10 20 50 100<br>NUMBER OF CYCLES AT 60Hz<br>PULSE POWER (kW) PULSE POWER (%)<br>CAPACITANCE (pF)<br>PEAK PULSE CURRENT (%)<br>FORWARD SURGE CURRENT (A)<br>**----- End of picture text -----**<br> **Figure 5. Non-Repetitive Surge Current** © 2002 Fairchild Semiconductor Corporation SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 www.fairchildsemi.com 4 **==> picture [573 x 759] intentionally omitted <==** **----- Start of picture text -----**<br> THIS DRAWING IS THE PROPERTY OF FAIRCHILD SEMICONDUCTOR CORPORATION. NO USE<br>THEREOF SHALL BE MADE OTHER THAN AS A REFERENCE FOR PROPOSALS AS SUBMITTEDTO FAIRCHILD SEMICONDUCTOR CORPORATION FOR JOBS TO BE EXECUTED IN CONFORMITY REVISIONS<br>COPIED OR DUPLICATED OR ITS CONTENTS DISCLOSED. THE INFORMATION CONTAINEDWITH SUCH PROPOSALS UNLESS THE CONSENT OF SAID FAIRCHILD SEMICONDUCTOR COR-PORATION HAS PREVIOUSLY BEEN OBTAINED. NO PART OF THIS DRAWING SHALL BE NBR DESCRIPTION DATE BY/APP'D<br>ON THIS DRAWING IS CONFIDENTIAL AND PROPRIETARY. 1 RELEASED TO DCC 19MAY2008 SDLEE / FSSZ<br>5.60<br>B B 0.13 M C B A<br>5.08<br>2.50<br>3.95 2.20<br>B<br>3.30 1.91 2.20<br>4.70<br>4.75<br>B<br>4.05 LAND PATTERN RECOMMENDATION<br>A<br>8°<br>0°<br>2.65 MAX<br>A<br>R0.15 4X<br>GAUGE<br>2.45<br>PLANE<br>1.90<br> 0.45<br>0.41<br>0.30 0.15<br>0.203 0.05<br>B 0 -8°<br>C 0.050<br>2.15 1.60<br>0.13 M C B A<br>1.65 0.75<br>DETAIL A<br>NOTES: SCALE 20 : 1<br> A. EXCEPT WHERE NOTED CONFORMS TO<br>JEDEC DO214 VARIATION AA.<br>B DOES NOT COMPLY JEDEC STD. VALUE.<br> C. ALL DIMENSIONS ARE IN MILLIMETERS.<br> D. DIMENSIONS ARE EXCLUSIVE OF BURRS,<br> MOLD FLASH AND TIE BAR PROTRUSIONS.<br> E. DIMENSION AND TOLERANCE AS PER ASME<br>Y14.5-1994.<br> F. LAND PATTERN STD. DIOM5336X240M. G. DRAWING FILE NAME: DO214AAREV1 DRAWN:APPROVALSBOBOY MALDO 19MAY2008DATE<br>CHECKED: SD LEE<br>APPROVED: FRED REN 2LD, SMB, JEDEC<br>APPROVED:HOWARD ALLEN DO214 VARIATION AA<br>SCALE SIZE DRAWING NUMBER REV<br>PROJECTION 1:1 N/A MKT-DO214AA 1<br>[MM]<br>INCH FORMERLY: N/A SHEET : 1 OF 1<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 © Semiconductor Components Industries, LLC www.onsemi.com **www.onsemi.com** **1**
Updated at February 9, 2023
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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