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SM9992DSQG
SM9992DSQG, Dual MOSFET, N Channel, 20V, DFN2x5B-6_EP
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- Manufacturer: Sinopower
- Product type: Dual MOSFETs
- Cfg.: Dual N
- BV(V): 20
- 4V max.: 8.5
- Package: View
- 2.5V max.: 11
- 3.1V max.: 9.2
- 3.7V max.: 8.8
- VGS (±V): 12
- VTH(V) typ.: 0.7
- ID (A) TA=25: 12
- Rg (Ω) typ.: 1.5
- Ciss (pF) typ.: 2000
- Coss (pF) typ.: 370
- Crss (pF) typ.: 350
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 4.5V max.: 8.1
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**®** sinopower WN ## **SM999 2DSQG** Dual N-Channel Enhancement Mode MOSFET ## **Features** ## **Pin Description** - 20V/12A, - RDS(ON)=8.1m Ω (Max.) @ VGS=4.5V - RDS(ON)=8.5m Ω (Max.) @ VGS=4V - RDS(ON)=8.8m Ω (Max.) @ VGS=3.7V RDS(ON)=9.2m Ω (Max.) @ VGS=3.1V RDS(ON)=11m Ω (Max.) @ VGS=2.5V - Reliable and Rugged - Lead Free and Green Devices Available (RoHS Compliant) - ESD protection ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. **==> picture [136 x 240] intentionally omitted <==** **----- Start of picture text -----**<br> S2<br>S2<br>G2<br>S1<br>S1<br>G1<br>Top View of DFN2x5-6<br>D D<br>(3) (4)<br>G1 G2<br>S1 S1 S2 S2<br>(1) (2) (5) (6)<br>**----- End of picture text -----**<br> N-Channel MOSFET ## **Ordering and Marking I nform ation** **==> picture [392 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> SM9992DS OOO - OO0 Package Code<br> QG : DFN2x5-6<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Handling Code<br>Temperature Range TR : Tape & Reel (3000ea/reel)<br>Assembly Material<br>(LE Package Code<br> G : Halogen and Lead Free Device<br>SM9992<br>SM9992DS QG : XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br> Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. _ww w.sinopowersem i.com_ 1 Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 **®** sinopower WN **SM999 2DSQG** ## **Absolute Maxim um Ratings** |**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Parameter**<br>~~es~~|**Rating**<br>~~es~~|**Unit**<br>~~es~~| |---|---|---|---|---| |VDSS<br>~~**a**~~|Drain-Source Voltage<br>~~**a**~~||20<br>~~**a**~~|V<br>~~**a**~~<br>~~es~~| |VGSS<br>~~**a**~~|Gate-Source Voltage<br>~~**a**~~<br>~~es~~<br>~~es~~||±12<br>~~**a**~~<br>~~es~~|| |ID<br>~~a es~~|Continue Drain Current<br>~~es~~|TA=25°C<br>~~es~~<br>~~es~~|12**<br>~~es~~|A<br>~~es~~<br>~~i~~<br>~~e~~<br>~~Oe~~<br>| |IDM<br>~~i~~<br>~~a~~|300µs Pulsed Drain Current<br>~~i~~<br>~~**e**e~~|TA=25°C<br>~~es~~<br>~~i~~<br>~~e~~|48<br>~~i~~<br>~~Pe~~|| ||10µs Pulsed Drain Current<br>~~i~~<br>~~**e**e~~||80***<br>~~i~~<br>~~Pe~~|| |IS<br>~~a~~<br>~~a~~|Diode continuous forward current<br>~~**e**e~~<br>~~e~~<br>||1.5<br>~~Pe~~<br>~~e~~<br>~~Oe~~<br>|| |TJ<br>~~a~~<br>~~a~~|Maximum Junction Temperature<br>~~a~~<br>||150<br>~~a~~<br>~~Oe~~<br>|°C<br>~~a~~<br>~~Oe~~<br>~~es~~<br>~~ee~~| |TSTG<br>~~a~~<br>~~a es~~<br>~~ee~~|Storage Temperature Range<br>~~a~~<br>~~es~~<br>~~ee~~||-55 to 150<br>~~a~~<br>~~Oe~~<br>~~es~~<br>~~ee~~|| |PD<br>~~a es~~<br>~~ee~~|Maximum Power Dissipation<br>~~es~~<br>~~ee~~|TA=25°C<br>~~es~~|3.5<br>~~Oe~~<br>~~es~~<br>~~ee~~|W<br>~~Oe~~<br>~~es~~<br>~~ee~~<br>~~a~~| |||TA=70°C<br>~~a~~|2.2<br>~~ee~~<br>~~a~~|| |RθJA*<br>~~ee~~<br>~~oe~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>~~oe~~||36<br>~~ee~~<br>~~oe~~|°C/W<br>~~ee~~<br>~~oe~~<br>~~ee~~| |RθJC*<br>~~oe~~<br>~~a ee~~|Thermal Resistance-Junction to Case<br>~~oe~~<br>~~ee~~||5.6<br>~~oe~~<br>~~ee~~|| Note：*Surface Mounted on 1in[2 ] pad area, t ≤ 10sec. - ** Current limited by bond wire. - *** Duty Cycle ≤ 1% ## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) |**Symbol**<br>~~a~~|**Parameter**<br>~~es es~~|**Test Conditions**<br>~~es~~|**Test Conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |**Static Characteristics**<br>~~a~~<br>~~es es~~<br>~~er~~<br>~~rs~~|||||||| |BVDSS<br>~~a es~~|Drain-Source Breakdown Voltage<br>~~es~~|VGS=0V,IDS=250µA<br>~~es~~<br>~~er~~<br>~~ee~~||20<br>~~es~~<br>~~rs~~<br>~~ee ee~~|-<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|V<br>~~es~~<br>~~ee~~| |IDSS<br>~~ee~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~er~~<br>~~ee~~<br>~~ee~~<br>~~|~~||-<br>~~rs~~<br>~~ee~~<br>~~ee ee~~<br>~~ft~~|-<br>~~ee~~<br>~~ee~~<br>~~ft~~|1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~| ||||TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~ee ee~~<br>~~|~~<br>~~ft~~|-<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ft~~|30<br>~~ee~~<br>~~ee~~<br>~~|~~|| |VGS(th)<br>~~ee~~|Gate Threshold Voltage|VDS=VGS,IDS=250µA<br>~~ee~~<br>~~e~~<br>~~s~~||0.5<br>~~ee ee~~<br>~~ft~~<br>~~se~~|0.7<br>~~ee~~<br>~~ft~~<br>~~se~~|1<br>~~ee~~<br>~~es~~|V<br>~~ee~~| |IGSS<br>~~ee~~<br>~~a e~~|Gate Leakage Current<br>~~e~~|VGS=±12V, VDS=0V<br>~~e~~~~**e**~~<br>~~e~~<br>~~s~~||-<br>~~ft~~<br>~~**e**~~<br>~~se~~<br>~~ee~~|-<br>~~ft~~<br>~~**e**~~<br>~~se~~<br>~~ee~~|±10<br>~~**e**~~<br>~~es~~<br>~~ee~~|µA<br>~~**e**~~| |RDS(ON)<br>a|Drain-Source On-state Resistance|VGS=4.5V, IDS=6A<br>~~e~~<br>~~s ~~<br>~~es~~||5<br> ~~se~~<br>~~es~~<br>~~ee~~<br>~~ee~~|6.2<br>~~se ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|8.1<br> ~~es~~<br>~~es~~<br>~~ee~~<br>~~ee~~|mΩ| |||VGS=4V, IDS=6A<br>~~ee~~||5.2<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.4<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.5<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|| |||VGS=3.7V, IDS=6A<br>~~ee~~||5.4<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.7<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|8.8<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|| |||VGS=3.1V, IDS=6A<br>~~ee~~||5.8<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.9<br> ~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|9.2<br> ~~ee~~<br>~~ee~~<br>~~ee~~|| |||VGS=2.5V, IDS=6A<br>~~es~~||6<br>~~ee ~~<br>~~es~~<br>~~ee~~|8.1<br> ~~ee ~~<br>~~es~~<br>~~ee~~|11<br> ~~ee~~<br>~~es~~|| |**Diode Characteristics**<br>~~ee ee~~|||||||| |VSD<br>a<br>~~a es~~|Diode Forward Voltage<br>~~es~~|ISD=6A, VGS=0V<br>~~es~~||-<br>~~es~~|0.7<br>~~es~~|1.3<br>~~es~~|V<br>~~es~~| _ww w.sinopowersem i.com_ 2 Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 **®** sinopower MA ## **SM999 2DSQG** ## **Electrical Characteristics ( Cont.)** (TA = 25 ° C Unless Otherwise Noted) |~~PR~~||||||| |---|---|---|---|---|---|---| |**Symbol**<br>~~PR~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |**Dynamic Characteristics**<br>b<br>~~PR~~||||||| |RG<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz|-|1.5|-|Ω| |Ciss<br>~~a~~|Input Capacitance|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~ee~~|-<br>~~pt~~|2000<br>~~pt~~|-<br>~~pt~~|pF| |Coss<br>~~a~~|Output Capacitance||-<br>~~pt~~|370<br>~~pt~~|-<br>~~pt~~|| |Crss<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~||-<br>~~pt~~<br>~~pt~~|350<br>~~pt~~<br>~~pt~~|-<br>~~pt~~<br>~~pt~~|| |td(ON)<br>~~ee~~<br>~~ee~~|Turn-on DelayTime<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~|-<br>~~pt~~<br>~~pt~~|13<br>~~pt~~<br>~~pt~~|-<br>~~pt~~<br>~~pt~~|ns| |tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~||-<br>~~pt~~<br>~~pt~~<br>~~pt~~|16<br>~~pt~~<br>~~pt~~<br>~~pt~~|-<br>~~pt~~<br>~~pt~~<br>~~pt~~|| |td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off DelayTime<br>~~ee~~||-<br>~~pt~~<br>~~pt~~<br>~~PP~~|40<br>~~pt~~<br>~~pt~~<br>~~PP~~|-<br>~~pt~~<br>~~pt~~<br>~~PP~~|| |tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~||-<br>~~pt~~<br>~~PP~~|6<br>~~pt~~<br>~~PP~~|-<br>~~pt~~<br>~~PP~~|| |**Gate Charge Characteristics**<br>b<br>~~ee ee~~<br>~~PP~~<br>~~a~~<br>~~ee~~<br>~~ae~~||||||| |Qg<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=10V, VGS=4.5V,<br>IDS=6A<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~ae~~|24<br>~~ae~~|-<br>~~ae~~|nC| |Qgs<br>~~a~~<br>~~re~~<br>~~a~~|Gate-Source Charge<br>~~ee~~||-<br>~~ae~~<br>~~|tT~~<br>~~|~~|1.7<br>~~ae~~<br>~~tT~~<br>|-<br>~~ae~~<br>~~tT~~<br>|| |Qgd<br>~~re~~<br>~~a~~|Gate-Drain Charge||-<br>~~|~~<br>~~|tT~~|10<br><br>~~tT~~|-<br><br>~~tT~~|| Note a : Pulse test ; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note b : Guaranteed by design, not subject to production testing. _ww w.sinopowersem i.com_ 3 Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 **SM999 2DSQG** **==> picture [4 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **Typical Operating Characteristics** ## **Power Dissipation** ## **Drain Current** **==> picture [437 x 512] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0 14<br>3.5<br>12<br>3.0<br>10<br>2.5<br>8<br>2.0<br>6<br>1.5<br>4<br>1.0<br>2<br>0.5<br>0.0 TA=25 o C 0 TA=25 o C,VG=4.5V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC) Tj - Junction Temperature (oC)<br>Safe Operation Area Thermal Transient Impedance<br>300 3<br>100<br>10 µ s 1 Duty = 0.5<br>A<br>0.2<br>10 300 µ s 0.1<br>1ms 0.1 0.05<br>1 10ms 0.02<br>100ms 0.01<br>1s<br>DC 0.01<br>0.1<br>Single Pulse Mounted on 1in 2 pad<br>0.01 TA=25oC 1E-3 R θ JA : 36 oC/W<br>0.01 0.1 1 10 100 1E-5 1E-4 1E-3 0.01 0.1 1 10 30<br>VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br> - Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 _ww w.sinopowersem i.com_ 4 **®** sinopower MA **SM999 2DSQG** ## **Typical Operating Characteristics ( Cont.)** ## **Output Characteristics** ## **Drain-Source On Resistance** **==> picture [195 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>VGS=2.5,3,4,5,6,7,8,9,10V<br>40<br>ie<br>30<br>20<br>/<br>2V<br>10<br>1.5V<br>1.7V<br>0 sah<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain-Source Voltage (V)<br>Gate-Source On Resistance<br>25<br>IDS=6A<br>20<br>15<br>10<br>5<br>0<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [195 x 514] intentionally omitted <==** **----- Start of picture text -----**<br> 11<br>10<br>9 V GS =2.5V<br>8 V =3.7V<br>GS<br>V =3.1V<br>7 GS<br>eee<br>6 V GS =4.5V V GS =4V<br>5<br>4 marr<br>0 8 16 24 32 40<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.4<br>IDS=250 µ A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 _ww w.sinopowersem i.com_ 5 **SM999 2DSQG** **==> picture [4 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **Typical Operating Characteristics ( Cont.)** ## **Drain-Source On Resistance** ## **Source-Drain Diode Forward** **==> picture [196 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>V = 4.5V<br>GS<br>1.6 I DS = 6A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 _ RON@Tj=25 o C: 6.2m Ω<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>3600<br>Frequency=1MHz<br>3200<br>2800<br>2400<br>2000 Ciss<br>1600<br>1200<br>800<br>Crss Coss<br>400<br>0<br>0 5 10 15 20<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [195 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>10<br>T =150oC<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V DS =10V<br>9<br> I = 6A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 _ww w.sinopowersem i.com_ 6 **®** sinopower WN **SM999 2DSQG** ## **Avalanche Test Circuit and W aveform s** **==> picture [167 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [159 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> VDSX(SUS)<br>tp<br>VDS<br>IAS<br>at<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br> ## **Sw it ching Tim e Test Circuit and W aveform s** **==> picture [167 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br> **==> picture [146 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 7 **®** sinopower WN **SM999 2DSQG** ## **Package I nform at ion** ## **DFN2x5-6 (saw type)** **==> picture [457 x 529] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>6 5 4 4 5 6<br>D1<br>] UU<br>PIN 1<br>INDEX AREA<br>PIN#1 IDENTIFICATION<br>CHAMFER 0.3000X45°<br>2X | ILL|<br>1 2 3 3 2 1<br>b<br>2X ae e<br>TOP VIEW BOTTOM VIEW<br>SIDE VIEW<br>ip<br>V A C<br>FRONT VIEW<br>wg p eooo SEATING PLANE lF<br>S DFN2x5-6 RECOMMENDED LAND PATTERN<br>Y Pe<br>M MILLIMETERS INCHES 0.5<br>B<br>O<br>L MIN. MAX. MIN. MAX.<br>SS itt<br>0.6 0.5<br>A ee 0.70 ee 1.00 ee 0.028 0.039 ai<br>pf<br>A1 0.00 0.05 0.000 0.002<br>esee<br>A3 0.10 0.203 0.004 0.008<br>a |<br>b 0.20 0.30 0.008 0.012<br>i eeee 2.9<br>D 1.90 2.10 0.075 0.083<br>ee<br>D1 1.20 1.60 0.047 0.063<br>ee ee |<br>E 4.80 5.20 0.189 0.205 1.6<br>aeeee<br>E1 2.60 3.20 0.102 0.126<br>ee ee HL 0.25<br>e 0.50 BSC 0.020 BSC<br>a oe<br>L 0.40 0.60 0.016 0.024 UNIT: mm<br>ee<br>L<br>E E1<br>A A1<br>A<br>A1 A3<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 _ww w.sinopowersem i.com_ 8 **SM999 2DSQG** **==> picture [4 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **Carrier Tape & Reel Dim ensions** T **==> picture [284 x 333] intentionally omitted <==** **----- Start of picture text -----**<br> D0 P2 P0<br>B<br>A A<br>PUL B0<br>ue Le<br>D1<br>—<br>B K0<br>P1 B – B<br>er<br>A0<br>A – A<br>d<br>_ WY /<br>T1<br>E1<br>F<br>W<br>H A<br>**----- End of picture text -----**<br> |**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**| |---|---|---|---|---|---|---|---|---| |**DFN2x5-6**|178.0±2.00|50 MIN.<br>13.2|13.2±0.20 13.0±0.20|0.20<br>1.5 MIN.|21.0±0.40|0.40 12.0+0.30<br>-0.10|12.0+0.30<br>1.75±0.10|5.5±0.10| ||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**| ||4.0±0.10|4.0±0.10|2.0±0.05<br>1.55+0.10<br>-0.00|1.55+0.10<br>-0.00<br>1.0+0.10<br>-0.00|-0.00<br>0.3±0.05|0.05<br>2.30±0.20|0.20 5.30±0.20|1.05±0.20| _ww w.sinopowersem i.com_ 9 Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 **®** sinopower VAN **SM999 2DSQG** ## **Taping Direction I nform at ion** ## **DFN2x5-6** **==> picture [85 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> USER DIRECTION OF FEED<br>**----- End of picture text -----**<br> ## **Classificat ion Profile** Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014 **==> picture [11 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ **SM999 2DSQG** **®** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~——=———~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~——————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C ## **Custom er Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 _ww w.sinopowersem i.com_ 11 Copyright Sinopower Sem iconductor, Inc. Rev. A.5 - Septem ber, 2014
Updated at February 12, 2024
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