SM9990DSQG

**®** sinopower N 

## **SM999 0DSQG** 

Dual N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 20V/6.2A, 

   - RDS(ON)= 31m Ω (Max.) @ VGS=4V RDS(ON)= 36m Ω (Max.) @ VGS=3.1V RDS(ON)= 42m Ω (Max.) @ VGS=2.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

DFN2x2-8 (top/bottom) 

- ESD Protection 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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D(5) D(6) D(7) D(8)<br>(2) (4)<br>G1 G2<br>S1(1) S2(3)<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **Ordering and Marking I nform ation** 

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SM9990DS OOO -O O0O Package Code<br>    QG : DFN2x2-8<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code     C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range     TR : Tape & Reel (3000ea/reel)<br>= Assembly Material<br>Package Code<br>    G : Halogen and Lead Free Device<br>SM9990DS  QG : 9990I XXXX - Lot Code<br>XXXX<br>**----- End of picture text -----**<br>


Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**®** sinopower MA 

## **SM999 0DSQG** 

## **Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage||20|V|
|VGSS|Gate-Source Voltage||±12||
|ID*|Continue Drain Current|TC=25°C|6.2**|A|
|||TC=70°C|5||
|IDM*|Pulsed Drain Current|TC=25°C|24||
|IS*|Diode continuous forward current||1.5|A|
|TJ|Maximum Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-55 to 150||
|PD|Maximum Power Dissipation|TA=25°C|1.8|W|
|||TA=70°C|1.1||



Note *：Surface Mounted on 1in[2 ] pad area, t ≤ 10sec. Note **：Current limited by bond wire. 

## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|||~~es~~|~~es~~|||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~<br>~~es~~||**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|**Static Characteristics**<br>~~es~~<br>~~Cn~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=250µA<br>~~a~~<br>~~**e**e~~||20<br>~~a~~<br>|-<br>~~a~~<br>~~oe~~|-<br>~~a~~<br>~~oe~~|V<br>~~a~~<br>~~oe~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~**e**e~~<br>~~|~~||-<br>~~a~~<br><br>~~|~~|-<br>~~a~~<br>~~oe~~<br>~~||~~|1<br>~~a~~<br>~~oe~~<br>~~|~~|µA<br>~~a~~<br>~~oe~~|
||||TJ=85°C<br>~~a~~<br>~~e~~<br>~~|~~|-<br>~~a~~<br><br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~oe~~<br>~~|~~<br>~~||~~|30<br>~~a~~<br>~~oe~~<br>~~|~~<br>~~|~~||
|VGS(th)<br>~~G~~|Gate Threshold Voltage<br>~~G~~|VDS=VGS, IDS=250µA<br>~~**e**e~~<br>~~G~~||0.5<br><br>~~|~~|0.7<br>~~oe~~<br>~~| |~~|1<br>~~oe~~<br>~~|~~|V<br>~~oe~~|
|IGSS<br>~~a~~|Gate Leakage Current|VGS=±10V, VDS=0V<br>~~**e**e ~~||-<br> <br>~~ee~~|-<br> ~~oe~~|±10<br>~~oe~~|µA<br>~~oe~~|
|RDS(ON)<br>a<br>~~Ce~~|Drain-Source On-state Resistance<br>|VGS=4V, IDS=2A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|23.5<br>~~ee~~<br>~~ee~~|31<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=3.1V, IDS=1.6A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~|36<br>~~ee~~<br>~~ee~~||
|||VGS=2.5V, IDS=1A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|30<br> ~~ee~~<br>~~ee~~|42<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~Ce~~||||||||
|VSD<br>a<br>~~CeaSn~~|Diode Forward Voltage<br>~~Sn~~|ISD=3A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8|1.3|V|
|trr<br>~~Sn~~<br>~~a~~|Reverse Recovery Time<br>~~Sn~~|ISD=6A, dISD/dt=100µs<br>~~ee~~<br>~~—~~||-<br>~~—tf~~|10.6<br>~~tf~~<br>~~|~~|-<br>~~|~~|nS<br>~~|~~|
|Qrr<br>~~Sn~~<br>~~a~~|Reverse Recovery Charge<br>~~Sn~~|||-<br>~~—tf~~|3.2<br>~~tf~~<br>~~|~~|-<br>~~|~~|nC<br>~~|~~|



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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**®** sinopower MA 

## **SM999 0DSQG** 

**Electrical Characteristics ( Cont.)** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ss~~|**Test Conditions**<br>~~ss~~|**Min.**<br>~~ss~~|**Typ.**<br>~~ss~~|**Max.**<br>~~ss~~|**Unit**<br>~~ss~~|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>b|||||||
|RG<br>~~a~~<br>~~rs~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz<br>~~**|**~~|-<br>~~**|**~~|5|-|Ω|
|Ciss<br>~~rs~~<br>~~a~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~**|**~~<br>~~ee~~<br>~~|~~|-<br>~~**|**~~<br>~~|~~<br>~~**|**~~|460|-|pF|
|Coss<br>~~rs~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~||-<br>~~**|**~~<br>~~|~~<br>~~**|**~~<br>~~|~~|115<br>~~|~~|-<br>~~|~~||
|Crss<br>~~a~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~||-<br>~~|~~<br>~~**|**~~<br>~~|~~<br>~~|~~|105<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on DelayTime|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=4.5V,<br>RG=6Ω<br>~~ee~~<br>~~**|**~~|-<br>~~| ~~<br>~~|~~<br>~~pt~~|4.5<br> ~~|~~<br>~~|~~<br>~~pt|~~|-<br>~~|~~<br>~~|~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~||-<br>~~| ~~<br>~~pt~~<br>~~pf~~|14<br> ~~|~~<br>~~pt|~~<br>~~pf~~|-<br>~~|~~<br>~~|~~<br>~~pf~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~||-<br>~~pt~~<br>~~pf~~<br>~~**|**~~|26<br>~~pt |~~<br>~~pf~~|-<br>~~|~~<br>~~pf~~||
|tf<br>~~a~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~pf~~<br>~~**|**~~|6<br>~~pf~~|-<br>~~pf~~||
|**Gate Charge Characteristics**<br>b<br>~~a~~<br>~~**|**~~<br>~~a~~<br>~~|~~|||||||
|Qg<br>~~a~~|Total Gate Charge|VDS=10V, VGS=4.5V,<br>IDS=6A<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~|-<br>~~|||~~|7.5<br>~~||~~|-<br>~~||~~|nC|
|Qgs<br>~~a~~<br>~~rs~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|ft~~<br>~~|~~<br>~~ft~~|0.3<br><br>~~ft|~~<br>~~ft~~|-<br><br>~~|~~<br>||
|Qgd<br>~~rs~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~||-<br>~~| ft~~<br>~~|~~<br>~~ft~~|3.6<br>~~ft~~<br>~~ft|~~|-<br><br>~~|~~||



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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

## **SM999 0DSQG** 

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## **Typical Operating Characteristics** 

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Power Dissipation Drain Current<br>2.0 5<br>1.6 4<br>1.2 3<br>0.8 2<br>0.4 1<br>TA=25oC TA=25oC,VG=4V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>100 2<br>1 Duty = 0.5<br>0.2<br>10 300 µ s<br>0.1<br>1ms<br>0.05<br>0.1<br>0.02<br>1 10ms<br>0.01<br>100ms 0.01<br>0.1 1s<br>DC<br>Single Pulse<br>o Mounted on 1in 2  pad<br>0.01 TA=25 C 1E-3 R θ JA : 70 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM999 0DSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

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Output Characteristics<br>20<br>VGS=5,6,7,8,9,10V<br>16<br>4V<br>12<br>3.5V<br>8<br>4<br>3V<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>60<br>I =2A<br>DS<br>50<br>40<br>30<br>20<br>10<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Drain-Source On Resistance<br>**----- End of picture text -----**<br>


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60<br>V =2.5V<br>50 GS<br>40<br>V =3.1V<br>GS<br>V =4V<br>GS<br>30<br>20<br>10<br>0 4 8 12 16 20<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[ce]<br>1.6<br>I DS  =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM999 0DSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

**Source-Drain Diode Forward** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>1.8 20<br>V = 4V<br>GS<br>1.6  I DS = 2A 10<br>1.4 T =150 o C<br>j<br>1.2<br>T =25oC<br>1.0 1 j<br>0.8<br>0.6<br>RON@Tj=25 o C: 23.5m Ω<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>100 0 10<br>Frequency=1MHz V DS =10V<br>90 0 9<br> I = 6A<br>DS<br>80 0 8<br>70 0 7<br>60 0 6<br>50 0 5<br>Ciss<br>40 0 4<br>30 0 3<br>20 0 2<br>Crss<br>Coss<br>10 0 1<br>0 0<br>0 4 8 12 16 20 0 3 6 9 12 15<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

**SM999 0DSQG** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>at<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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sinopower **®** YA 

**SM999 0DSQG** 

## **Package I nform at ion** 

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DFN2x2-8<br>E E1<br>8 1<br>te<br>1 8<br>7 2<br>2 7<br>6 3<br>3 6<br>5 4<br>4 5<br>me: L<br>TOP VIEW BOTTOM VIEW<br>SIDE VIEW<br>Si bsns<br>FRONT VIEW<br>C Co<br>R0.200<br>b<br>D1<br>D e<br>A<br>A1 A3<br>A<br>A1<br>**----- End of picture text -----**<br>


|DIM<br>A3<br>A1<br>A||MIN.<br>NOM.<br>**SPECIFATION** (Millimeters)<br>0.000<br>0.203  REF.<br>-<br>0.700<br>0.750|MIN.<br>NOM.<br>**SPECIFATION** (Millimeters)<br>0.000<br>0.203  REF.<br>-<br>0.700<br>0.750|MIN.<br>NOM.<br>**SPECIFATION** (Millimeters)<br>0.000<br>0.203  REF.<br>-<br>0.700<br>0.750|MIN.<br>NOM.<br>**SPECIFATION** (Millimeters)<br>0.000<br>0.203  REF.<br>-<br>0.700<br>0.750|MIN.<br>NOM.<br>**SPECIFATION** (Millimeters)<br>0.000<br>0.203  REF.<br>-<br>0.700<br>0.750|MAX.<br>0.050<br>0.800||RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|RECOMMENDED LAND PATTERN<br>1.75<br>0.5<br>~~iT~~|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|D||1.900||2.000|||2.100||||||||||||||||||||||||||||0.3||||||
|D1||1.550||1.600|||1.650||||||||||||||||||||||||||||||||||
|E||1.900||2.000|||2.100|||1.05|||||||||||||||||||||||||||||||
|E1||0.900||0.950|||1.000||||||||||||||||||||||||||||||||||
|b||0.200||0.250|||0.300||||||||||||||||||||||||||||||||||
|e||||0.500  BSC.|||||||||||||||||||||||||||||||0.4||||||
|L||0.350||0.400|||0.450|||||||||||||||||0.25|||||||||||||||||
||||||||||||||||||||||||||||||||||||UNIT:mm||||||



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**®** sinopower WN 

## **SM999 0DSQG** 

## **Carrier Tape & Reel Dim ensions** 

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P2 P0<br>D0<br>T<br>B0<br>A ||<br>B-B K0<br>A-A B-B<br>D1<br>P1<br>Ss<br>A0<br>A-A<br>d<br>IP D ?<br>T1<br>E1<br>F<br>W<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN2x2-8**|178.0±2.00|2.00 60.0±0.50|0.50<br>9.0±2.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  2.0±0.20|21.0±0.50|0.50<br>8.0+0.30<br>-0.10 1.75|1.75±0.10|0.10<br>3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.3±0.05|0.05<br>2.3±0.10|2.3±0.10|0.10<br>1.05±0.10|



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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**®** sinopower VAN 

**SM999 0DSQG** 

## **Taping Direction I nform at ion** 

## **DFN2x2-8** 

USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

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**®** sinopower MA 

**SM999 0DSQG** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014 

**SM999 0DSQG** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~——=———~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~—————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C 

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Copyright  Sinopower Sem iconductor, Inc. Rev. A.5 - Decem ber, 2014