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SM9989DSO
SM9989DSO, Dual MOSFET, N Channel, 20V, TSSOP-8
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- Manufacturer: Sinopower
- Product type: Dual MOSFETs
- Cfg.: Dual N
- BV(V): 20
- 4V max.: 15.5
- Package: View
- 2.5V max.: 20
- 3.1V max.: 17
- VGS (±V): 12
- VTH(V) typ.: 0.7
- ID (A) TA=25: 7.5
- Rg (Ω) typ.: 8
- Ciss (pF) typ.: 892
- Coss (pF) typ.: 148
- Crss (pF) typ.: 119
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 4.5V max.: 14.5
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SM9989DSO** Dual N-Channel Enhancement Mode MOSFET ## **Features** ## **Pin Description** - 20V/7.5A, - RDS(ON)= 14.5mΩ(max.) @ VGS= 4.5V RDS(ON)= 15.5mΩ(max.) @ VGS= 4V RDS(ON)= 17mΩ(max.) @ VGS= 3.1V RDS(ON)= 20mΩ(max.) @ VGS= 2.5V **==> picture [101 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>S2<br>S2<br>G2<br>D<br>S1<br>S1<br>G1<br>**----- End of picture text -----**<br> - 100% UIS Tested - Reliable and Rugged - ESD Protected - Lead Free and Green Devices Available - (RoHS Compliant) ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. Top View of TSSOP-8 **==> picture [128 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> (1) (8)<br>D D<br>(4) (5)<br>G1 G2<br>S1 S2<br>(2)(3) (6)(7)<br>N-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering and Marking Information** > SM9989DS OO ~~-O~~ 00 0 Package Code O : TSSOP-8 Assembly Material Operating Junction Temperature Range Handling Code C : -55 to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device ~~se~~ | SM9989DS O : SM9989 XXXXX - Lot Code XXXXX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. _www.sinopowersemi.com_ Copyright Sinopower Semiconductor, Inc. 1 Rev. A.3 - November, 2017 ## **SM9989DSO** ## **Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) |**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**| |---|---|---|---|---| |VDSS|Drain-Source Voltage||20|V| |VGSS|Gate-Source Voltage||±12|| |ID|Continue Drain Current|TA=25°C|7.5|A| |||TA=70°C|6|| |IDM|Pulsed Drain Current|TA=25°C|30|| |IS|Diode continuous forward current||1.5|A| |TJ|Maximum Junction Temperature||150|°C| |TSTG|Storage Temperature Range||-55 to 150|| |PD|Maximum Power Dissipation|TA=25°C|1.25|W| |||TA=70°C|0.8|| |RθJA*|Thermal Resistance-Junction to Ambient||100|°C/W| Note *：Surface Mounted on 1in[2 ] pad area, t ≤ 10sec. 2 Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) |**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>| |---|---|---|---|---|---|---|---| |**Static Characteristics**<br>|||||||| |BVDSS<br>~~ee~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, IDS=250µA<br>~~ee~~||20<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~| |IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~| ||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~|| |VGS(th)<br>~~ee~~<br>~~a~~|Gate Threshold Voltage<br>~~ee~~<br>|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~<br>||0.5<br>~~ee~~<br>|0.7<br>~~ee~~<br>|1.1<br>~~ee~~<br>|V<br>~~ee~~<br>| |IGSS<br>~~aee~~|Gate Leakage Current<br>~~ee~~|VGS=±10V, VDS=0V<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~| |RDS(ON)<br>a|Drain-Source On-state Resistance|VGS=4.5V, IDS=7.5A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|11.5<br>~~ee~~<br>~~ee~~|14.5<br>~~ee~~<br>~~ee~~|mΩ| |||VGS=4V, IDS=7A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~<br>~~ee~~|15.5<br>~~ee~~<br>~~ee~~|| |||VGS=3.1V, IDS=6A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br>~~ee~~<br>~~ee~~|| |||VGS=2.5V, IDS=5A<br>~~ee~~||-<br>~~ee ~~<br>~~ee~~<br>~~ee~~|14.5<br> ~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~|| |**Diode Characteristics**<br>~~ee~~<br>~~ee ee~~|||||||| |VSD<br>a<br>~~a~~<br>~~**a**~~|Diode Forward Voltage<br>|ISD=1A, VGS=0V<br><br>~~A~~||-<br><br>~~eee~~|0.7<br><br>~~eee oe~~|1.3<br><br>~~oe~~|V<br><br>~~oe~~| |trr<br>~~es~~<br>~~**a**~~|Reverse RecoveryTime<br>~~es~~|ISD=7.5A, dISD/dt=100A/µs<br>~~es~~<br>~~A~~||-<br>~~es~~<br>~~eee~~|10<br>~~es~~<br>~~eee oe~~|-<br>~~es~~<br>~~oe~~|nS<br>~~es~~<br>~~oe~~| |Qrr<br>~~es~~<br>~~**a**~~|Reverse RecoveryCharge<br>~~es~~|||-<br>~~es~~<br>~~eee~~<br>~~po~~|3.5<br>~~es~~<br>~~eee oe~~<br>~~po~~|-<br>~~es~~<br>~~oe~~<br>~~po~~|nC<br>~~es~~<br>~~oe~~<br>~~po~~| |**Dynamic Characteristicsb**<br>~~A~~<br>~~eee oe~~<br>~~**a**~~|||||||| |RG<br>~~a~~|Gate Resistance<br>~~a~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~a~~<br>~~ee~~<br>~~|~~||-<br>~~a~~<br>~~|ot~~|8<br>~~a~~<br>~~ot~~|-<br>~~a~~<br>|Ω<br>~~a~~| |Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~ee~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~a~~<br>~~|ot~~<br>~~|~~<br>~~|~~|892<br>~~a~~<br>~~ot|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~|pF<br>~~a~~| |Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~ee~~|||-<br>~~| ot~~<br>~~|~~<br>~~|~~<br>~~|~~|148<br>~~ot~~<br>~~|~~<br>|-<br><br>~~|~~<br>|| |Crss<br>~~a~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|of~~<br>~~|~~<br>~~|~~|119<br>~~|~~<br>~~of~~<br>~~|~~|-<br>~~|~~<br>~~of~~<br>~~|~~|| |td(ON)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=4.5V,<br>RG=6Ω<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|9<br><br>~~|~~<br>~~|~~|16<br><br>~~|~~<br>~~|~~|ns| |tr<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|13<br>~~|~~<br>~~|~~<br>~~|~~|23<br>~~|~~<br>~~|~~<br>~~|~~|| |td(OFF)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|ot~~|55<br>~~|~~<br>~~|~~<br>~~ot~~|99<br>~~|~~<br>~~|~~|| |tf<br>~~a~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|ot~~|36<br>~~|~~<br>~~ot~~|65<br>~~|~~|| |**Gate Charge Characteristics**b<br>~~a~~<br>~~ee~~<br>~~| ot~~<br>~~ee~~<br>~~ee~~<br>~~|~~|||||||| |Qg<br>~~ee~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~<br>|VDS=10V, VGS=4.5V,<br>IDS=7.5A<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~|~~||-<br>~~|||~~<br>~~P|~~|9.8<br>~~||~~<br>~~P|~~|12.8<br>~~||~~<br>~~P|~~|nC| |Qgs<br>~~ee~~<br>~~ee~~<br>~~ee ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|||~~<br>~~P|~~<br>~~|ot~~|0.5<br>~~||~~<br>~~P|~~<br>~~ot~~|-<br>~~||~~<br>~~P|~~<br>|| |Qgd<br>~~ee~~<br>~~ee ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~||~~<br>~~P|~~<br>~~|ot~~|3.6<br>~~||~~<br>~~P|~~<br>~~ot|~~|-<br>~~||~~<br>~~P|~~<br>~~|~~|| 3 Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Typical Operating Characteristics** **Drain Current** **==> picture [442 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> Power Dissipation Drain Current<br>1.50 10<br>1.25<br>8<br>1.00<br>6<br>0.75<br>4<br>0.50<br>2<br>0.25<br>TA=25 o C TA=25oC,VG=4.5V<br>0.00 a 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature ( [o] C) Tj - Junction Temperature ( [o] C)<br>Safe Operation Area Thermal Transient Impedance<br>100 2<br>1 Duty = 0.5<br>0.2<br>10 0.1<br>0.05<br>300µs 0.1<br>0.02<br>1ms<br>1 0.01<br>10ms<br>100ms<br>0.01 Single Pulse<br>0.1 1s<br>DC<br>Mounted on 1in 2 pad<br>0.01 TA=25oC 1E-3 RθJA : 100 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30<br>VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br> - Drain Current (A)<br>ID<br>Normalized Effective Transient<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 4 _www.sinopowersemi.com_ ## **SM9989DSO** **==> picture [456 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Operating Characteristics (Cont.)<br>Output Characteristics Drain-Source On Resistance<br>30 20<br>25 V GS =2,3,4,5,6,7,8,9,10V 18<br>1.8V<br>20 16<br>V =2.5V<br>GS<br>15 14 V =3.1V<br>GS<br>V =4V<br>GS<br>10 12<br>V =4.5V<br>1.5V GS<br>5 10<br>0 = 8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>50 1.6<br>IDS=7.5A I DS =250µA<br>1.4<br>40<br>1.2<br>30<br>1.0<br>0.8<br>20<br>0.6<br>10<br>0.4<br>0 0.2<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate-Source Voltage (V) Tj - Junction Temperature ( [o] C)<br>)<br>Ω<br> - Drain Current (A) - On Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 5 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Typical Operating Characteristics (Cont.)** **==> picture [442 x 531] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source On Resistance Source-Drain Diode Forward<br>1.8 30<br>V = 4.5V<br>GS<br> I = 7.5A<br>1.6 DS<br>10<br>1.4 T =150 o C<br>j<br>1.2 T =25oC<br>j<br>1.0<br>1<br>0.8<br>0.6<br>RON@Tj=25 o C: 11.5mΩ<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature ( [o] C) VSD - Source-Drain Voltage (V)<br>Capacitance Gate Charge<br>1400 5.0<br>Frequency=1MHz V =10V<br>DS<br>4.5<br> I =7.5A<br>1200 DS<br>4.0<br>1000 3.5<br>Ciss<br>3.0<br>800<br>2.5<br>600<br>2.0<br>400 1.5<br>1.0<br>200 Coss<br>Crss 0.5<br>0 0.0 a<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br>- Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (nC) - Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 6 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Avalanche Test Circuit and Waveforms** **==> picture [386 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L tp VDSX(SUS)<br>DUT VDS<br>IAS<br>RG<br>VDD<br>tp IL VDD EAS<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br> ## **Switching Time Test Circuit and Waveforms** **==> picture [166 x 96] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>:<br>tp<br>**----- End of picture text -----**<br> **==> picture [146 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 7 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Disclaimer** Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 8 Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Classification Profile** Copyright Sinopower Semiconductor, Inc. 9 Rev. A.3 - November, 2017 _www.sinopowersemi.com_ ## **SM9989DSO** ## **Classification Reflow Profiles** **==> picture [460 x 222] intentionally omitted <==** **----- Start of picture text -----**<br> |||| |---|---|---| |Profile Feature|Sn-Pb Eutectic Assembly|Pb-Free Assembly| |Preheat & Soak|100 °C|150 °C| |Temperature min (Tsmin)|150 °C|200 °C| |Temperature max (Tsmax)| |60-120 seconds|60-120 seconds| |Time (Tsmin to Tsmax) (ts)| |Average ramp-up rate|3 °C/second max.|3°C/second max.| |(Tsmax to TP)| |Liquidous temperature (TL)|183 °C|217 °C| |Time at liquidous (tL)|60-150 seconds|60-150 seconds| |Peak package body Temperature| |*|See Classification Temp in table 1|See Classification Temp in table 2| |(Tp)| |Time (tP)** within 5°C of the specified| |20** seconds|30** seconds| |classification temperature (Tc)| |Average ramp-down rate (Tp to Tsmax)|6 °C/second max.|6 °C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.| |** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.| **----- End of picture text -----**<br> Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ~~—=———~~ ≥2.5 mm 250 °C 245 °C 245 °C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080 Copyright Sinopower Semiconductor, Inc. Rev. A.3 - November, 2017 10 _www.sinopowersemi.com_
Updated at February 12, 2024
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