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SM9435PSK
SM9435PSK, Single MOSFET, P Channel, -30V, SOP-8
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| Lead time | 30 days |
Datasheet
## **SM9435PSK**
P-Channel Enhancement Mode MOSFET
## **Features**
## **Pin Description**
- -30V/-5.4A ,
- RDS(ON)=58m Ω (max.) @ VGS=-10V
- RDS(ON)=86m Ω (max.) @ VGS=-4.5V
- 100% UIS Tested
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D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>**----- End of picture text -----**<br>
- Reliable and Rugged
- Lead Free and Green Devices Available
- (RoHS Compliant)
- ESD Protection
## **Applications**
- Power Management in Notebook Computer,
- Portable Equipment and Battery Powered Systems
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Top View of SOP − 8<br>**----- End of picture text -----**<br>
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( 5,6,7,8 )<br>DDDD<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>
P-Channel MOSFET
## **Ordering and Marking I nform ation**
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SM9435PS O0-000 Package Code<br> K : SOP-8<br>Assembly Material<br>Operating Junction Temp. Range<br>Handling Code C : -55 to 150 C °<br>Temp. Range Handling Code<br>IE Package Code TR : Tape & Reel<br>Assembly Material<br> G: Halogen and Lead Free Device<br>SM9435PS K : 9435 XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders.
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## **SM9435PSK**
## **Absolute Maxim um Ratings** (TA = 25 ° C unless otherwise noted)
|**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage||-30|V|
|VGSS|Gate-Source Voltage||±20||
|ID*|Continuous Drain Current|VGS=-10V|-5.4|A|
|IDM*|Pulsed Drain Current||-21||
|IS*|Diode Continuous Forward Current||-2|A|
|TJ|Maximum Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-55 to 150||
|PD*|Maximum Power Dissipation|TA=25°C|2.5|W|
|||TA=100°C|1||
|RθJA*|Thermal Resistance-Junction to Ambient|t≤10sec|50|°C/W|
|||Steady state|80||
Note *：Surface Mounted on 1in[2 ] pad area, t ≤ 10sec.
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## **SM9435PSK**
**Electrical Characteristics** (TA = 25 ° C unless otherwise noted)
|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test Condition**<br>~~ee~~|**Test Condition**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage <br>|VGS=0V, IDS=-250µA<br>||-30<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~PRee~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~es~~|VDS=-24V, VGS=0V<br>Tj=85°C<br>~~ee~~<br>~~fT~~||-<br>~~ee~~|-<br>~~ee~~|-1<br>~~ee~~|µA<br>~~ee~~|
||||Tj=85°C<br>~~ee~~<br>~~fT~~|-<br>~~ee~~<br>~~fT~~|-<br>~~ee~~<br>~~fT~~|-30<br>~~ee~~<br>~~fT~~||
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~es~~<br>~~es~~|VDS=VGS, IDS=-250µA<br>~~ee~~||-1|-1.5|-2.3|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current<br>~~es~~<br>~~es~~|VGS=±20V, VDS=0V<br>~~ee~~||-|-|±10|µA|
|RDS(ON)<br>a<br>~~a~~<br>~~ae~~<br>~~a~~|Drain-Source On-state Resistance<br>~~es~~<br>~~ae~~<br>~~es~~|VGS=-10V, IDS=-5.4A<br>~~ee~~<br>~~ae~~||-<br>~~ae~~<br>~~ee~~|46<br>~~ae~~<br>~~ee~~|58<br>~~ae~~<br>~~ee~~|mΩ<br>~~ae~~|
|||VGS=-4.5V, IDS=-2A<br>~~ae~~<br>~~ee~~<br>~~ee~~||-<br>~~ae~~<br>~~ee~~<br>~~ee~~|64<br>~~ae~~<br>~~ee~~<br>~~ee~~|86<br>~~ae~~<br>~~ee~~<br>~~ee~~||
|VSD<br>a<br>~~a~~|Diode Forward Voltage<br>~~es~~|ISD=-1A, VGS=0V<br>~~ee~~||-<br>~~ee ~~|-<br> ~~ee~~|-1.3<br>~~ee~~|V|
|**Gate Charge Characteristics**<br>b<br>~~esee~~<br>~~a~~<br>~~ee~~<br>~~||~~||||||||
|Qg<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=-15V, VGS=-10V,<br>IDS=-5.4A<br>~~ee~~<br>~~|~~||-<br>~~|~~|13<br>~~|~~|-<br>~~|~~|nC|
|Qgs<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~| ~~<br>~~ff~~<br>~~||~~|1.3<br> ~~|~~<br>~~ff~~<br>~~|~~|-<br>~~|~~<br>~~ff~~<br>~~|~~||
|Qgd<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~||~~|3.1<br>~~|~~|-<br>~~|~~||
|**Dynamic Characteristics**<br>b<br>~~a~~<br>~~ee~~<br>~~| ||~~||||||||
|Ciss<br>~~a~~|Input Capacitance<br>~~a~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~a~~<br>~~a~~<br>~~**|**~~||-<br>~~a~~<br>~~|~~|642<br>~~a~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~|pF<br>~~|~~<br>~~|~~<br>~~||~~|
|Coss<br>~~a~~|Output Capacitance<br>~~a~~|||-<br>~~a~~<br>~~||~~|76<br>~~a~~<br>~~||~~|-<br>~~a~~<br>~~||~~||
|Crss<br>~~**a**~~|Reverse Transfer Capacitance|||-<br>~~|~~<br>~~**|**~~|66<br>~~|~~<br>~~|~~<br>|-<br>~~|~~<br>~~|~~<br>||
|td(ON)<br>~~**a**~~|Turn-on Delay Time|VDD=-15V, RL=15Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~**|**~~<br>~~a~~||-<br>~~**|**||~~|8<br>~~||~~|-<br>~~||~~|ns|
|Tr<br>~~**a**~~|Turn-on Rise Time|||-<br>~~**|**~~|13<br>|-<br>||
|td(OFF)<br>~~a~~|Turn-off DelayTime<br>~~a~~|||-<br>~~a~~<br>~~|~~|26<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~||
|Tf<br>~~a~~|Turn-off Fall Time|||-<br>~~|~~|7<br>~~ft~~|-<br>~~ft~~||
|trr<br>~~ne~~<br>~~ee~~|Reverse Recovery Time<br>~~ne~~<br>~~ee~~|IDS=-5.4A, dlSD/dt=100A/µs<br>~~ne~~<br>~~ee~~||-<br>~~ne~~<br>~~ft~~|13<br>~~ne~~<br>~~ftft~~|-<br>~~ne~~<br>~~ft~~|ns<br>~~ne~~<br>~~ft~~|
|Qrr<br>~~ne~~<br>~~ee~~|Reverse Recovery Charge<br>~~ne~~<br>~~ee~~|||-<br>~~ne~~<br>~~ft~~|7<br>~~ne~~<br>~~ftft~~|-<br>~~ne~~<br>~~ft~~|nC<br>~~ne~~<br>~~ft~~|
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**SM9435PSK**
## **Typical Characteristics**
**Power Dissipation**
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3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25oC<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>300 µ s<br>1 1ms<br>10ms<br>100ms<br>1s<br>0.1<br>DC<br>0.01 TA=25oC<br>0.01 0.1 1 10 100 300<br> -VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
## **Drain Current**
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6<br>5<br>4<br>3<br>2<br>1<br>TA=25 o C,VG=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Drain Current (A)<br> -<br>D<br>-I<br>**----- End of picture text -----**<br>
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Tj - Junction Temperature (°C)<br>**----- End of picture text -----**<br>
**Thermal Transient Impedance**
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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01 R θ JA :50 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 30<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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**SM9435PSK**
## **Typical Characteristics ( Cont.)**
**Output Characteristics**
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21<br>VGS=-4,-5,-6,-7,-8,-9,-10V<br>18<br>-3.5V<br>15<br>12<br>-3V<br>9<br>6<br>-2.5V<br>3<br>-2V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> -VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>
**Gate-Source On Resistance**
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140<br>I = -5.4A<br>DS<br>120<br>100<br>80<br>60<br>40<br>20<br>2 3 4 5 6 7 8 9 10<br> -VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Drain-Source On Resistance**
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100<br>90<br>80<br>V =-4.5V<br>GS<br>70<br>60<br>50 VGS=-10V<br>40<br>30<br>20<br>0 4 8 12 16 20<br> -ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>1.6<br>I DS =-250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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**SM9435PSK**
## **Typical Characteristics ( Cont.)**
## **Drain-Source On Resistance**
## **Source-Drain Diode Forward**
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2.0 20<br>V = -10V<br>GS<br>1.8 I = -5.4A<br>DS 10<br>1.6<br>T =150oC<br>1.4 j<br>1.2<br>T =25oC<br>1.0 1 j<br>0.8<br>0.6<br>0.4<br>R ON @T j =25 o C: 46m Ω<br>0.2 st 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br> Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>900 10<br>Frequency=1MHz V = -15V<br>800 9 I DS= -5.4A<br>DS<br>8<br>700<br>Ciss 7<br>600<br>6<br>500<br>5<br>400<br>4<br>300<br>3<br>200<br>2<br>100 Crss Coss 1<br>0 0 i<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12 14<br> -VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance S<br>-I<br>C - Capacitance (pF) - Gate-source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
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## **SM9435PSK**
## **Avalanche Test Circuit and W aveform s**
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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>
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tAV<br>EAS<br>_-- NW<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>
## **Sw it ching Tim e Test Circuit and W aveform s**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>
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td(on) tr td(off) tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>
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**SM9435PSK**
## **Disclaim er**
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
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**SM9435PSK**
## **Package I nform at ion**
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-T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>HH tt - ff1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>mm.<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.75 - 0.069<br>=e<br>A1 0.10 0.25 0.004 0.010<br>A2 1.25 - 0.049 - 2.2<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>D 4.80 5.00 0.189 0.197 5.74<br>eee<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>L 0.40 1.27 0.016 0.050 0.8<br>0 0 ° 8 ° 0 ° 8 ° 0.635<br>UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br> 2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br> Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br> 3. Dimension “E” does not include inter-lead flash or protrusions.<br> Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>
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## **SM9435PSK**
## **Carrier Tape & Reel Dim ensions**
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OD0 i 5 P0 P2 fe P1 8] © A<br>nears K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOP-8**|330.0±<br>2.00|50 MIN.<br>12.4+2.00<br>-0.00|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30 1.75|1.75±0.10|5.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10<br>2.0|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.40±0.20|5.20±0.20|2.10±0.20|
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**SM9435PSK**
## **Taping Direction I nform at ion**
## **SOP-8**
USER DIRECTION OF FEED
## **Classificat ion Profile**
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**SM9435PSK**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C Table 2. Pb-free Process – Classification Temperatures (Tc) ~~FE~~ **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~—————~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~——=—~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C
## **Custom er Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Updated at February 12, 2024
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