SM7003NSF

SM7003NSF, Single MOSFET, N Channel, 68V, TO-220

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 68
Package: View
VGS (±V): 25
Tube: View
VTH(V) typ.: 3
ID (A) TC=25: 80
Rg (Ω) typ.: 1.1
Ciss (pF) typ.: 4000
Coss (pF) typ.: 340
Crss (pF) typ.: 260
Quality Report: View
RON(mΩ max) 10V max.: 7.2
Delivery and price
Units per pack	1
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Current stock	10+
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Datasheet
> **SM7003NSF** sinopower **®** 

N-Channel Enhancement Mode MOSFET pO 

## **Features** 

## **Pin Description** 

- 68V/80A, 

RDS(ON)=7.2mΩ (max.) @ VGS=10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

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Top View of TO-220 

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## **Applications** 

- Synchronous Rectification. 

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- Power Management in Inverter Systems. 

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S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

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SM7003NS Package Code<br>    F : TO-220<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 175  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range     TU : Tube (50ea/tube)<br>Assembly Material<br>Package Code<br>    G : Halogen and Lead Free Device<br>SM7003NS  F : SM7003N XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** sinopower WN 

**SM7003NSF** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**(TA= 25°C Unless Otherwise Noted)<br>~~Pe~~<br>~~oe~~<br>~~a~~|||||
|VDSS<br>~~ee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||68<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>~~oe~~<br>|
|VGSS<br>~~ee~~<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br><br>||±25<br>~~ee~~<br>~~oe~~<br><br>~~So~~<br>||
|TJ<br>~~ace~~<br>~~a~~|Maximum Junction Temperature<br>~~ce~~<br>||175<br>~~oe~~<br>~~ce~~<br>~~So~~<br>|°C<br>~~oe~~<br>~~ce~~|
|TSTG<br>~~ce~~<br>~~a~~<br>~~a~~|Storage Temperature Range<br>~~ce~~<br>~~ee~~<br>~~es~~<br>||-55 to 175<br>~~ce~~<br>~~So~~<br>~~ee~~||
|IS<br>~~a~~<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~<br>~~es~~<br>|TC=25°C<br>~~ee~~<br>~~es~~<br>~~es~~|80<br>~~So~~<br>~~ee~~<br>~~es~~|A<br>~~es~~|
|IDP<br>~~a a~~<br>~~ee~~|300μs Pulse Drain Current Tested<br>~~a~~<br>~~ee~~|TC=25°C<br>~~es~~<br>~~ee~~|300<br>~~ee~~|A<br>~~ee~~|
|ID<br>~~ee~~<br>~~a~~|Continuous Drain Current<br>~~ee~~|TC=25°C<br>~~ee~~|80*<br>~~ee~~|A<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~a~~<br>~~eee~~|61<br>~~ee~~<br>~~a~~<br>~~eee~~||
|PD<br>~~ee~~<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~ee ~~|TC=25°C<br> ~~ee~~<br>~~eee~~|107<br>~~ee~~<br>~~eee~~|W<br>~~ee~~<br>~~a~~|
|||TC=100°C<br>~~eee~~<br>~~a~~|53<br>~~eee~~<br>~~a~~<br>~~a~~||
|RθJC<br>~~a~~<br>~~ee~~<br>~~a~~|Thermal Resistance-Junction to Case<br>~~eee~~<br>~~ee~~||1.4<br>~~eee~~<br>~~ee~~<br>~~a~~|°C/W<br>~~ee~~<br>~~a~~|
|RθJA<br>~~ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~||62.5<br>~~ee~~<br>~~a~~||
|EAS<br>~~a~~<br>~~a~~|Avalanche Energy, Single Pulsed (L=1mH)||500<br>~~a~~|mJ<br>~~a~~|



Note：* Current limited by bond wire. 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~**|**~~|**Test Conditions**<br>~~ee~~<br>~~**|**~~|**SM7003NSF**<br>~~ee~~<br>~~**|**~~|**SM7003NSF**<br>~~ee~~<br>~~**|**~~|**SM7003NSF**<br>~~ee~~<br>~~**|**~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|||||**Min.**<br>~~ee~~<br>~~**|**~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~||
|**Static Characteristics**<br>~~**|**~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V, IDS=250µA<br>~~ee~~||68<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=54V, VGS=0V<br>TJ=85°C<br>~~t~~<br>~~r~~||-<br>~~t~~~~**e**~~|-<br>~~**e**~~|1<br>~~**e**e~~|µA<br>~~e~~|
||||TJ=85°C<br>~~t~~<br>~~r~~|-<br>~~t~~~~**e**~~<br>~~r~~|-<br>~~**e**~~|30<br>~~**e**e~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|VDS=VGS,IDS=250µA<br>||2<br>|3<br>|4<br>|V<br>|
|IGSS<br>~~Pe~~|Gate Leakage Current<br>~~Pe~~|VGS=±25V, VDS=0V<br>~~Pe~~||-<br>~~Pe~~|-<br>~~Pe~~|±100<br>~~Pe~~|nA<br>~~Pe~~|
|RDS(ON)<br>a <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=40A||-|6|7.2|mΩ|
|**Diode Characteristics**<br>~~a~~||||||||
|VSD<br>a<br>~~a~~|Diode Forward Voltage<br>~~ee~~|ISD=20A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8<br>~~ee~~|1.3<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~ee~~<br>~~rs~~|Reverse RecoveryTime<br>~~ee~~|ISD=40A, dlSD/dt=100A/µs<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~|~~<br>~~|~~|45<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|ns<br>~~ee~~<br>~~|~~|
|Qrr<br>~~ee~~<br>~~rs~~|Reverse RecoveryCharge<br>~~ee~~|||-<br>~~ee~~<br>~~|~~<br>~~|~~|65<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|nC<br>~~ee~~<br>~~|~~|



_www.sinopowersemi.com_ 

## **SM7003NSF** 

## **®** sinopower MA 

**Electrical Characteristics (Cont.)** (TA = 25°C Unless Otherwise Noted) 

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SM7003NSF<br>Symbol Parameter  Test Conditions  Unit<br>ee Min. Typ. Max.<br>b | [||] ee<br>Dynamic Characteristics<br>RG Gate Resistance  VGS=0V,VDS=0V,F=1MHz -  1.1  -  Ω<br>a ee ee<br>Ciss Input Capacitance  VGS=0V,  -  4000 5200<br>a | |<br>Coss Output Capacitance  VDS=30V,  -  340 -  pF<br>es ee Frequency=1.0MHz  pf<br>Crss Reverse Transfer Capacitance  -  260 -<br>ee | |<br>td(ON) Turn-on Delay Time  -  22  40<br>aee tr Turn-on Rise Time  IVDSDD=1A, V=30V, RGENL=30=10V,  Ω,  || -  24  44  ns<br>td(OFF) Turn-off Delay Time  RG=10Ω -  108 198<br>ee ee sft<br>tf Turn-off Fall Time  -  50  104<br>||<br>eea Gate Charge Characteristics  b | |<br>Qg Total Gate Charge  -  82  115<br>ee Qgs Gate-Source Charge  ee IVDSDS=40A =30V, VGS=10V,  pf -  15  -  nC<br>ee ee<br>Qgd Gate-Drain Charge  -  28  -<br>ee ee<br>Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.<br>Note b : Guaranteed by design, not subject to production testing.<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM7003NSF** 

## **Typical Operating Characteristics** 

## **Drain Current** 

**Power Dissipation** 

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120 100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20<br>20<br>0 TC=25oC 0 TC=25oC,VG=10V<br>0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>[=]<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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Safe Operation Area Thermal Transient Impedance<br>1000 3<br>1<br>Duty = 0.5<br>100 0.2<br>1ms<br>0.1<br>10ms<br>100ms 0.1 0.05<br>10 0.02<br>1s<br>0.01<br>DC 0.01<br>1 Single Pulse<br>Mounted on minimum pad<br>0.1 TC=25oC 1E-3 ial RθJA :62.5oC/W<br>0.01 0.1 1 10 100 400 1E-4 1E-3 0.01 0.1 1 10 100<br> VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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## **SM7003NSF** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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200<br>175 V GS =6,7,8,9,10V<br>150 5.5V<br>125<br>100<br>75 5V<br>50<br>4.5V<br>25<br>4V<br>0<br>0 1 2 3 4 5<br> VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>21<br>I DS =40A<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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10<br>9<br>8<br>7<br>V =10V<br>GS<br>6<br>5<br>4<br>3<br>0 40 80 120 160 200<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150 175<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM7003NSF** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.2<br>V  = 10V<br>GS<br>2.0  I DS  = 40A<br>1.8<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 i R ON @T j =25 o C: 6mΩ<br>-50 -25 0 25 50 75 100 125 150 175<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>7000<br>Frequency=1MHz<br>6000<br>5000<br>Ciss<br>4000<br>3000<br>2000<br>1000<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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200<br>100<br>10 Tj=150 o C<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>9 V DS = 30V<br> I DS = 40A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 15 30 45 60 75 90<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** sinopower WA 

**SM7003NSF** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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V<br>t DSX(SUS)<br>p<br>VDS<br>IAS<br>VDD<br>EAS<br>+—>|<br>tAV<br>VDS<br>90%<br>10%<br>VGS<br>td(on) :   t -———— r td(off)  tf )<br>**----- End of picture text -----**<br>


## **Avalanche Test Circuit and Waveforms** 

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VDS<br>RD<br>j<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>gh<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM7003NSF** 

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Package Information<br>TO-220<br>E A<br>E/2 A1 E1<br>TS ee<br>J |<br>b e c A2<br>;<br>b2<br>TAAL<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 6.35 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>a<br>Note: Follow JEDEC TO-220 AB.<br>Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com<br>Rev. A.2 - January, 2014<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**®** sinopower VN 

**SM7003NSF** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM7003NSF** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. 

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~—_—S===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~SS~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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Updated at February 12, 2024
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