SM6127NSKP

SM6127NSKP, Single MOSFET, N Channel, 60V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 60
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TA=25: 13
ID (A) TC=25: 80
Rg (Ω) typ.: 1
Ciss (pF) typ.: 4350
Coss (pF) typ.: 425
Crss (pF) typ.: 215
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 5.9
RON(mΩ max) 4.5V max.: 7.2
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
## **SM6127NSKP** 

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N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 60V/80A[a] , 

RDS(ON)=5.9mΩ (max.) @ VGS=10V 

- RDS(ON)=7.2mΩ (max.) @ VGS=4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

## **Applications** 

- Secondary Side Synchronous Rectification 

- DC-DC Converter 

- Motor Control 

- Load Switching 

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[D] [D] |<br>D [D] |<br>[G] Pin 1<br>[S]<br>S [S]<br>DFN5x6-8<br>(5,6,7,8)<br>DD DD<br>(4) G |<br>S S S<br>( 1, 2, 3 )<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM6127NS Package Code<br>     KP : DFN5x6-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM6127NS  KP : SM6127 XXXXX - Lot Code<br>XXXXX<br>yo<br>j E |<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

1 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

**®** sinopower MA 

## **SM6127NSKP** 

## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|~~Pa~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~Pa~~<br>~~Pe~~|**Parameter**<br>||**Rating**<br>|**Unit**<br>|
|**Common Ratings **<br>~~Pa~~<br>~~Pe~~|||||
|VDSS<br>~~Peee~~|Drain-Source Voltage<br>~~ee~~||60<br>~~ee~~|V<br>~~ee~~|
|VGSS<br>~~ee~~<br>~~a~~<br>~~———~~|Gate-Source Voltage<br>~~ee~~<br>~~a~~<br>~~———~~||±20<br>~~ee~~<br>~~a~~||
|TJ<br>~~———~~|Maximum Junction Temperature<br>~~———~~||150|°C|
|TSTG<br>~~———~~<br>~~a~~|Storage Temperature Range<br>~~———~~<br>~~a~~||-55 to 150<br>~~a~~||
|IS<br>~~———~~<br>~~a~~|Diode Continuous Forward Current<br>~~———~~<br>~~a~~|TC=25°C<br>~~a~~|40<br>~~a~~|A<br><br>~~eee~~|
|ID<br>~~a~~<br>~~a~~|Continuous Drain Current<br>~~a~~<br>~~ee~~<br>|TC=25°C<br>~~a~~<br>~~ee~~<br>|80<br>a<br>~~a~~<br>~~ee~~<br>||
|||TC=100°C<br>~~a~~<br>~~ee~~<br>|59<br>~~a~~<br>~~ee~~<br>||
|IDM<br>~~a~~<br>~~a~~|Pulsed Drain Current<br>~~a~~<br>~~ee~~<br>|TC=25°C<br>~~a~~<br>~~ee ~~<br><br>~~ee~~|300<br>b<br>~~a~~<br> ~~ee~~<br><br>~~eee~~||
|PD<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~ee~~<br>|TC=25°C<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|96<br>~~a~~<br>~~eee~~<br>~~ee~~<br>|W<br>~~a~~<br>~~eee~~<br>|
|||TC=100°C<br>~~a~~<br>~~ee~~<br>~~ee~~<br>|38<br>~~a~~<br>~~eee~~<br>~~ee~~<br>||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~<br>|SteadyState<br>~~ee ~~<br>~~ee ~~<br>|1.3<br> ~~eee~~<br> ~~ee~~<br>|°C/W<br>~~eee~~<br>|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~<br>~~eee~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|11<br>~~ee~~<br>~~ee~~<br>~~eee~~||
|PD<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~a~~<br>~~ee~~|2<br>~~ee~~<br>~~a~~<br>~~eee~~|W<br>~~ee~~<br>~~a~~<br>~~eee~~<br>~~eee~~|
|||TA=70°C<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|1.3<br>~~a~~<br>~~eee~~<br>~~ee~~<br>~~eee~~||
|RθJA<br>~~a~~<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~a~~<br>~~ff~~|t≤10s<br>~~ee ~~<br>~~a~~<br>~~ee~~|20<br> ~~eee~~<br>~~a~~<br>~~eee~~|°C/W<br>~~eee~~<br>~~a~~<br>~~eee~~|
|||Steady State<br>~~a~~<br>~~ee~~<br>~~ff~~|60<br>~~a~~<br>~~eee~~<br>~~ff~~||
|IAS<br>c<br>~~ee~~|Avalanche Current, Singlepulse<br>~~ff~~|L=0.5mH<br>~~ee ~~<br>~~ff~~|30<br> ~~eee~~<br>~~ff~~|A<br>~~eee~~|
|EAS<br>c<br>~~eea~~|Avalanche Energy, Singlepulse<br>~~ff~~|L=0.5mH<br>~~ff~~|225<br>~~ff~~|mJ|



Note a：Current limited by bond wire. Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C) 

2 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

**®** sinopower MA 

## **SM6127NSKP** 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Co~~||||||||
|BVDSS<br>~~a~~<br>~~PR~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br><br>~~eerr~~||60<br><br>~~rr~~|-<br><br>~~rr~~|-<br><br>~~rr~~|V<br>|
|IDSS<br>~~ee~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~eerr~~||-<br>~~ee~~<br>~~rr~~|-<br>~~ee~~<br>~~rr~~|1<br>~~ee~~<br>~~rr~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~rr~~|-<br>~~ee~~<br>~~rr~~|-<br>~~ee~~<br>~~rr~~|30<br>~~ee~~<br>~~rr~~||
|VGS(th)<br>~~PR~~<br>~~PR~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>~~eerr~~<br>||1<br>~~rr~~<br>|2<br>~~rr~~<br>|3<br>~~rr~~<br>|V<br>|
|IGSS<br>~~PR~~<br>~~PR~~|Gate Leakage Current<br>|VGS=±20V, VDS=0V<br>~~eerr~~<br>||-<br>~~rr~~<br>|-<br>~~rr~~<br>|±100<br>~~rr~~<br>|nA<br>|
|RDS(ON)<br>d <br>~~PREe~~|Drain-Source On-state Resistance<br>~~Ee~~|VGS=10V, IDS=25A<br>~~Ee~~||-<br>~~Ee~~<br>~~ee~~|4.9<br>~~Ee~~<br>~~ee~~|5.9<br>~~Ee~~<br>~~ee~~|mΩ<br>~~Ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=25A<br>~~Ee~~<br>~~ee~~||-<br>~~Ee~~<br>~~ee~~<br>~~ee~~|5.6<br>~~Ee~~<br>~~ee~~<br>~~ee~~|7.2<br>~~Ee~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~Ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||||||
|VSD<br>e<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>|ISD=20A, VGS=0V<br><br>~~A~~<br>~~|~~||-<br><br>~~| ot~~|0.8<br><br>~~ot~~<br>~~|~~|1.3<br>|V<br>|
|trr<br>~~es~~<br>~~a~~|Reverse RecoveryTime<br>~~es~~|ISD=30A, dlSD/dt=100A/µs<br>~~es~~<br>~~A~~<br>~~|~~||-<br>~~es~~<br>~~| ot~~|33<br>~~es~~<br>~~ot~~<br>~~|~~|-<br>~~es~~|ns<br>~~es~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~|||-<br>~~es~~<br>~~| ot~~|41<br>~~es~~<br>~~ot~~<br>~~|~~|-<br>~~es~~|nC<br>~~es~~|
|**Dynamic Characteristics**<br>e<br>~~A~~<br>~~a~~<br>~~| ot~~<br>~~|~~<br>~~PR~~||||||||
|RG<br>~~PR~~<br>~~ee~~|Gate Resistance|VGS=0V,VDS=0V,f=1MHz<br>~~|~~||-<br>~~|~~<br>~~|~~|1.0<br>~~|~~|-<br>~~|~~|Ω|
|Ciss<br>~~PR~~<br>~~ee~~<br>~~es~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~|~~||-<br>~~|~~<br>~~|~~<br>~~|ft~~|4350<br>~~|~~<br>~~ft~~|6100<br>~~|~~<br>|pF|
|Coss<br>~~ee~~<br>~~es~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|ft~~<br>~~|~~|425<br>~~|~~<br>~~ft|~~<br>|-<br>~~|~~<br>~~|~~<br>||
|Crss<br>~~es~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~| ft~~<br>~~|fT~~<br>~~|~~|215<br>~~ft~~<br>~~fT~~<br>|-<br><br>~~fT~~<br>||
|td(ON)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~||-<br>~~|~~<br>~~|fT~~<br>~~|ft~~|25<br><br>~~fT~~<br>~~ft~~|45<br><br>~~fT~~<br>|ns|
|tr<br>~~a~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~|~~<br>~~|ft~~<br>~~|ft~~|12<br><br>~~ft~~~~**|**~~<br>~~ft~~|22<br><br>~~**|**~~<br>||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~| ft~~<br>~~|ft~~<br>~~|ft~~|90<br>~~ft~~~~**|**~~<br>~~ft|~~<br>~~ft~~|162<br>~~**|**~~<br>~~|~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time|||-<br><br>~~| ft~~<br>~~|ft~~|38<br>~~**|**~~<br>~~ft|~~<br>~~ft~~|69<br>~~**|**~~<br>~~|~~||
|**Gate Charge Characteristics**<br>e<br>~~|~~<br>~~ee~~<br>~~| ft~~<br>~~a~~||||||||
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=4.5V,<br>IDS=30A<br>~~ee~~<br>~~|~~||-<br>~~|~~|39<br>|-<br>|nC|
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=30A<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~||-<br>~~|fT~~<br>~~|~~|83<br>~~fT~~<br>|117<br>~~fT~~<br>||
|Qgs<br>~~ee~~<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~|~~<br>~~|fT~~<br>~~|~~<br>~~ft~~|17<br><br>~~fT~~<br>~~ft~~|-<br><br>~~fT~~<br>||
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain Charge|||-<br>~~|~~<br>~~|~~<br>~~ft~~|15<br><br>~~ft|~~|-<br><br>~~|~~||



3 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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## **SM6127NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Drain Current** 

**Power Dissipation** 

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120 100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20<br>20<br>TC=25oC TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperaturej - Junction Temperature- Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>1000 2<br>1 Duty = 0.5<br>0.2<br>100 0.1<br>0.05<br>10 µ s 0.1<br>0.02<br>10<br>0.01<br>100µs<br>1ms<br>DC 0.01<br>Single Pulse<br>1<br>TC=25oC RθJC :1.3oC/W<br>0.1 A 1E-3<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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100<br>80<br>60<br>40<br>20<br>TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperaturej - Junction Temperature- Junction Temperature<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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sinopower WN **®** 

**SM6127NSKP** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

**Drain-Source On Resistance** 

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120 9<br>8<br>100 V GS =3.5,4,5,6,7,8,9,10V<br>7<br>80<br>V =4.5V<br>6 GS<br>60 V =10V<br>GS<br>5<br>40<br>4<br>3V<br>20<br>3<br>0 2<br>0.0 eee 0.5 1.0 1.5 2.0 2.5 3.0 0 a 20 40 60 80 100 120 140<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>24 1.6<br>IDS=25A IDS =250µA<br>20 1.4<br>16 1.2<br>12 1.0<br>8 0.8<br>4 0.6<br>0 0.4<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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5 

## **SM6127NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>2.5<br>V  = 10V  100<br>GS<br> I  = 25A<br>DS<br>2.0<br>T =150oC<br>10 j<br>1.5<br>T =25 o C<br>j<br>1.0<br>1<br>0.5<br>RON@Tj=25oC: 4.9mΩ<br>0.0 = 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>7000 10<br>Frequency=1MHz V =30V<br>DS<br>9  I =30A<br>6000 DS<br>8<br>5000<br>7<br>Ciss<br>6<br>4000<br>5<br>3000<br>4<br>2000 3<br>2<br>1000<br>Crss Coss 1<br>0 0<br>0 8 16 24 32 40 0 15 30 45 60 75 90<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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**®** sinopower WA 

**SM6127NSKP** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>C VDD<br>tp<br>o®<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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## **SM6127NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>at<br>E1 E<br>A<br>C<br>**----- End of picture text -----**<br>


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RECOMMENDED LAND PATTERN<br>**----- End of picture text -----**<br>


|**SYM**<br>**BO**<br>**L**||**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|A||0.90|||1.20||0.035||0.047||||||||||||||||||||||||||||||||0.77||||||
|B||0.3|||0.51||0.012||0.020||||||||||||||||||||||||||||||||||||||
|C||0.19|||0.25||0.007||0.010||||||||||||||||||||||||||||||||||||||
|D<br>D1||4.80<br>4.00|||5.30<br>4.40||0.189<br>0.157||0.209<br>0.173|0.61|||||||||||||||||||||||||||||||||||||
|E||5.90|||6.20||0.232||0.244||||||||||||||||||||||||||||||||3.6||||||
|E1<br>e<br>F<br>F1||5.50<br>0.05<br>1.27 BSC<br>0.35|1.27 BSC||5.80<br>0.75<br>0.30||0.050 BSC<br>0.217<br>0.228<br>0.002<br>0.014<br>0.030<br>0.012|||1.18 1.16||||||||||||||||||||||||||||||||||6.1|||
|G<br>H<br>G1||3.34<br>0.05<br>0.35|||3.9<br>0.30<br>0.75||0.131<br>0.002<br>0.014||0.154<br>0.012<br>0.030|||||||||||0.5||||||||||||1.27|||||||||0.71||||||
|K||0.762|||-||0.03||-||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||UNIT: mm|||||||
|Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.|||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.||||||||||||||||||||||||||||||||||||||||||
|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.||||||||||||||||||||||||||||||||||||||||||||



Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

8 

sinopower **®** WA 

**SM6127NSKP** 

## **Carrier Tape & Reel Dimensions** 

**==> picture [315 x 338] intentionally omitted <==**

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>| Wy <//<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|0.10<br>2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

sinopower **®** YX 

**SM6127NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

**==> picture [11 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>**----- End of picture text -----**<br>


_www.sinopowersemi.com_ 

**®** 

## **SM6127NSKP** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=—=S===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———=————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, 

Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

11
Updated at February 12, 2024
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