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SM6103PSU
SM6103PSU, Single MOSFET, P Channel, -60V, TO-252-2
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: P
- BV(V): -60
- Package: View
- VGS (±V): 25
- VTH(V) typ.: -2
- ID (A) TA=25: -5.8
- ID (A) TC=25: -15
- Rg (Ω) max.: 20
- Rg (Ω) typ.: 10
- Ciss (pF) typ.: 530
- Coss (pF) typ.: 66
- Crss (pF) typ.: 36
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 93
- RON(mΩ max) 4.5V max.: 128
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SM6103PSU**
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SM6103PSU ®<br>P-Channel Enhancement Mode MOSFET<br>po<br>Features Pin Description<br>• -60V/-15A,<br>RDS(ON) =93m Ω (max.) @ VGS =-10V Drain 4<br>RDS(ON) =128m Ω (max.) @ VGS =-4.5V 3 Source<br>2<br>• Reliable and Rugged<br>. 1 Gate<br>• Lead Free and Green Devices Available<br> (RoHS Compliant)<br>Top View of TO-252-3<br>**----- End of picture text -----**<br>
- 100% UIS + R Tested g
- ESD protection pass 2KV
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**Note :** The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
## **Applications**
- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
P-Channel MOSFET
## **Ordering and Marking I nform ation**
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SM6103PS Package Code<br> U : TO-252<br>Operating Junction Temperature Range<br>Assembly Material<br> C : -55 to 150 [o] C<br>Handling Code<br>Handling Code<br>Temperature Range TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br> G : Halogen and Lead Free Device<br>|<br>SM6103PS U : SM6103P XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
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**SM6103PSU**
**Absolute Maxim um Ratings** (TA = 25 ° C Unless Otherwise Noted)
~~a~~ **Symbol Parameter Rating Unit** ~~a~~ **Common Ratings** ( TA= 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage -60 V ~~ssa~~ VGSS Gate-Source Voltage ±25 TJ Maximum Junction Temperature 150 °C ~~a————————~~ TSTG ~~ee~~ Storage Temperature Range ~~Ee~~ -55 to 150 IS Diode Continuous Forward Current TC=25°C -10 ~~a eeee~~ TC=25°C -15 ID Continuous Drain Current A ~~[re~~ TC=100°C -9.5 IDM Pulsed Drain Current TC=25°C -62* ~~a—~~ TC=25°C 44.6 PD Maximum Power Dissipation W TC=100°C 17.9 ~~aa a~~ R θ JC Thermal Resistance-Junction to Case Steady State ~~re eel~~ 2.8 °C/W TA=25°C -5.8 ID Continuous Drain Current A TA=70°C -4.6 ~~ee es eee~~ PD Maximum Power Dissipation TA=25°C ~~ee~~ 6.25 W TA=70°C 4 ~~aa~~ t ~~re~~ ≤ 10s ~~eel~~ 20 R θ JA Thermal Resistance-Junction to Ambient °C/W ~~[ee~~ Steady State 55 ~~a~~ IAS a Avalanche Current, Single pulse (L=0.1mH) ~~ee eee~~ 19 A ~~a~~ EAS a Avalanche Energy, Single pulse (L=0.1mH) 18 mJ Note *：Current limited by bond wire. Note a：UIS tested and pulse width are limited by maximum junction temperature 150[o] C (initial temperature TJ = 25[o] C).
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**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V,IDS=-250µA<br>~~a~~<br>~~a~~<br>~~ee~~||-60<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|V<br>~~a~~|
|IDSS<br>~~a~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~<br>~~a~~|VDS=-48V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a~~||-<br>~~a~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~a~~<br>~~ee~~|-1<br>~~a~~<br>~~a~~|µA<br>~~a~~<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-30<br>~~a~~||
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, IDS=-250µA<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a~~||-1<br>~~a~~<br>~~ee~~|-2<br>~~a~~<br>~~ee~~|-3<br>~~a~~|V<br>~~a~~|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current<br>|VGS=±20V, VDS=0V<br><br>~~ee~~||-<br>|-<br>|±10<br>|µA<br>|
|RDS(ON)<br>bDrain-Source On-state Resistance<br>~~aes~~<br>~~PC~~|Drain-Source On-state Resistance<br>~~es~~<br>|VGS=-10V, IDS=-5.8A<br>~~es~~<br>~~ee~~<br>~~ee ee~~<br>||-<br>~~es~~<br>~~ee~~<br>|73<br>~~es~~<br>~~ee~~<br>|93<br>~~es~~<br>~~ee~~<br>|mΩ<br>~~es~~<br>~~ee~~<br>|
|||VGS=-4.5V, IDS=-3.5A<br>~~es~~<br>~~ee~~<br>~~ee ee~~<br>||-<br>~~es~~<br>~~ee~~<br>|93<br>~~es~~<br>~~ee~~<br>|128<br>~~es~~<br>~~ee~~<br>||
|**Diode Characteristics**<br>~~ee~~<br>~~ee eeee~~<br>~~PC~~||||||||
|VSD<br>b<br>~~PCa~~<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=-1A, VGS=0V<br>~~ee~~<br>~~ee ee~~<br>~~a~~<br>~~A~~||-<br>~~ee~~<br>~~a~~<br>~~ee~~|-0.7<br>~~ee ~~<br>~~a~~<br>~~ee~~|-1<br> ~~ee~~<br>~~a~~|V<br>~~ee~~<br>~~a~~|
|trr<br>c<br>~~es~~<br>~~a~~|Reverse RecoveryTime<br>~~es~~|ISD=-5.8A,<br>dlSD/dt=100A/µs<br>~~es~~<br>~~A~~||-<br>~~es~~<br>~~ee~~|22<br>~~es~~<br>~~ee~~|-<br>~~es~~|ns<br>~~es~~|
|Qrr<br>c<br>~~es~~<br>~~a~~|Reverse RecoveryCharge<br>~~es~~|||-<br>~~es~~<br>~~ee~~<br>~~pe~~|23<br>~~es~~<br>~~ee~~<br>~~pe~~|-<br>~~es~~<br>~~pe~~|nC<br>~~es~~<br>~~pe~~|
|**Dynamic Characteristics**<br>c<br>~~es~~<br>~~A~~<br>~~ee~~<br>~~a~~<br>~~pe~~<br>~~CC~~||||||||
|RG<br>~~CC~~<br>~~a~~<br>~~i~~|Gate Resistance<br>~~CC~~<br>~~a~~<br>~~i~~|VGS=0V,VDS=0V,F=1MHz<br>~~CC~~<br>~~a~~<br>~~i~~||-<br>~~CC~~<br>~~a~~<br>~~i~~|10<br>~~CC~~<br>~~a~~<br>~~i~~|20<br>~~CC~~<br>~~a~~<br>~~i~~|Ω<br>~~CC~~<br>~~a~~<br>~~i~~|
|Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~a~~<br>~~ee~~|VGS=0V,<br>VDS=-30V,<br>Frequency=1.0MHz<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~po~~<br>~~pt~~|530<br>~~a~~<br>~~po~~<br>~~pt~~|-<br>~~a~~<br>~~po~~<br>~~pt~~|pF<br>~~a~~|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~pt~~<br>~~a~~|66<br>~~pt~~<br>~~a~~|-<br>~~pt~~<br>~~a~~||
|Crss<br>~~a~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~pt~~<br>~~a~~<br>~~a~~|36<br>~~pt~~<br>~~a~~<br>~~a~~|-<br>~~pt~~<br>~~a~~<br>~~a~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-on DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=-30V, RL=30Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~a~~<br>~~a~~<br>~~pt~~|9<br>~~a~~<br>~~a~~<br>~~pt~~|-<br>~~a~~<br>~~a~~<br>~~pt~~|ns|
|tr<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~a~~<br>~~pt~~|6<br>~~a~~<br>~~pt~~|-<br>~~a~~<br>~~pt~~||
|td(OFF)<br>~~a~~<br>~~a~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~pt~~<br>~~po~~<br>~~po~~|36<br>~~pt~~<br>~~po~~<br>~~po~~|-<br>~~pt~~<br>~~po~~<br>~~po~~||
|tf<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~po~~|25<br>~~po~~|-<br>~~po~~||
|**Gate Charge Characteristics**<br>c<br>~~ee ee~~<br>~~po~~<br>~~|~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||||||||
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=-30V, VGS=-10V,<br>IDS=-5.8A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|nC|
|Qgs<br>~~ee~~<br>~~es~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~ee~~<br>~~a~~|1.5<br>~~ee~~<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~<br>~~a~~||
|Qgd<br>~~es~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~a~~|3.3<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~||
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
**®**
## **SM6103PSU**
## **Typical Operating Characteristics**
**Power Dissipation**
## **Drain Current**
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50 18<br>15<br>40<br>12<br>30<br>9<br>20<br>6<br>10<br>3<br>TC=25oC TC=25oC,VG=-10V<br>0 A 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>300 3<br>1 Duty = 0.5<br>100<br>0.2<br>0.1<br>100 µ s 0.1 0.05<br>10 0.02<br>eset<br>0.01<br>0.01<br>1ms<br>10ms<br>1<br>DC<br>1E-3<br>Single Pulse<br>0.1 TC=25oC 1E-4 R θ JC :2.8oC/W<br>0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1 0.5<br>-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P - Drain Current (A)<br>D<br>-I<br>- Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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**®**
## **SM6103PSU**
## **Typical Operating Characteristics ( Cont.)**
**Output Characteristics**
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20<br>VGS=-5,-6,-7,-8,-9,-10V -4.5V<br>16<br>12<br>-4V<br>8<br>-3.5V<br>4<br>-3V<br>0<br>0 1 2 3 4 5<br>-VDS - Drain-Source Voltage (V)<br>Gate-Source On Resistance<br>210<br>I =-5.8A<br>DS<br>180<br>150<br>120<br>90<br>60<br>30<br>2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
## **Drain-Source On Resistance**
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210<br>180<br>150<br>V =-4.5V<br>GS<br>120<br>90 VGS=-10V<br>60<br>30<br>0<br>0 5 10 15 20 25 30<br>-ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS =-250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 ~<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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**SM6103PSU**
**®**
## **Typical Operating Characteristics ( Cont.)**
## **Drain-Source On Resistance**
## **Source-Drain Diode Forward**
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2.00<br>V = -10V<br>GS<br>1.75 I DS = -5.8A<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>0.25<br>0.00 a R ON @T j =25oC: 73m Ω<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Capacitance<br>720<br>Frequency=1MHz<br>600<br>Ciss<br>480<br>360<br>240<br>120 Crss Coss<br>0<br>0 8 16 24 32 40<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>
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50<br>10 o<br>T =150 C<br>j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br> - Source Current (A)<br>S<br>-I<br>**----- End of picture text -----**<br>
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-VSD - Source - Drain Voltage (V)<br>**----- End of picture text -----**<br>
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Gate Charge<br>**----- End of picture text -----**<br>
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10<br>V =-30V<br>DS<br>9<br> I =-5.8A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>
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**SM6103PSU**
## **Avalanche Test Circuit and W aveform s**
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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>
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tAV<br>EAS<br>— WS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>
## **Sw it ching Tim e Test Circuit and W aveform s**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>
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td(on) tr td(off) tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>
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**SM6103PSU**
**®**
## **Package I nform at ion**
## **TO-252-3**
E A b3 c2 E1 ~~a) oh c~~ b e SEE VIEW A GAUGE PLANE SEATING PLANE L ~~Ea +~~ VIEW A ~~re~~ **TO-252-3 RECOMMENDED LAND PATTERN SYM MILLIMETERS INCHES BOL MIN. MAX. MIN. MAX.** 6.25 MIN. A 2.18 2.39 0.086 0.094 ~~SSS~~ A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 ~~——————ae~~ b3 4.95 5.46 0.195 0.215 6.8 MIN. c 0.46 0.61 0.018 0.024 ~~-—f+~~ c2 0.46 0.89 0.018 0.035 D 5.33 6.22 ~~—-~~ 0.210 ~~+~~ 0.245 6.6 gy D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 ~~i gt~~ E1 3.81 6.00 0.150 0.236 3 MIN. ~~or~~ e 2.29 BSC 0.090 BSC ~~ti tg~~ H 9.40 10.41 0.370 0.410 2.286 L 0.90 1.78 0.035 0.070 1.5 MIN. L3 0.89 2.03 0.035 0.080 4.572 ~~Se~~ L4 - 1.02 - 0.040 ~~ar a a 0~~ 0° 8° 0° 8° UNIT: mm Note : Follow JEDEC TO-252 .
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**SM6103PSU**
## **Carrier Tape & Reel Dim ensions**
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||||||||||||||||||||||H||A|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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||||||||||||||||||||||T1|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|**Application**||||||**A**|||**A**||||||||||||**H**|||**H**||||||||||||**T1**||||**T1**||||||||||||||**C**||||||||||||||||||**d**|||||||||||||||**D**||**D**|||||||||||**W**|**W**||||||**E1**||**F**|
||330.0±2.00|||||||||||||||||50 MIN.||||||||||||16.4+2.00<br>-0.00|||||||||||||||||13.0+0.50<br>-0.20|||||||||||||||||||||1.5 MIN.|||||1.5 MIN.|||||||||20.2 MIN.||||||||||||||16.0±0.30|||||||1.75±0.10||||||7.50±0.05|
|**TO-252-3**|||||**P0**||||||||||||||||**P1**||||**P1**|||||||||||**P2**||||**P2**||||||||||||**D0**||||||||||||||||||||**D1**||||**D1**|||||||||||**T**|**T**||||||||||||**A0**||||||||**B0**|**K0**|
|||4.0±0.10||||||||||||||||8.0±0.10||||||||||||||2.0±0.05||||||||||||||||1.5+0.10<br>-0.00||||||||||||||||||||1.5 MIN.|||||1.5 MIN.|||||||||-0.40|0.6+0.00<br>-0.40|||||||||||||6.80±0.20|||||||10.40±0.20 2.50±0.20|||||||
(mm)
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
sinopower **®** YX
**SM6103PSU**
## **Taping Direction I nform at ion**
**TO-252-3**
USER DIRECTION OF FEED
## **Classificat ion Profile**
Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
**==> picture [11 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
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**®** sinopower MA
**SM6103PSU**
## **Disclaim er**
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
**SM6103PSU**
**®**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm3 **<br>≥**350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=sSS===~~|
|---|
|Table 2. Pb-free Process – Classification Temperatures (Tc)|
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6mm<br>260 °C<br>260 °C<br>260 °C<br>1.6mm – 2.5mm<br>260 °C<br>250 °C<br>245 °C<br>≥2.5mm<br>250 °C<br>245 °C<br>245 °C<br>~~——————=—~~|
|**Reliability Test Program**|
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000 Hrs,100% of VGS max@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~S—————~~|
## **Custom er Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - February, 2015
Updated at February 12, 2024
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