SM6033NSF

> **SM6033NSF** sinopower UN **®** 

N-Channel Enhancement Mode MOSFET ~~pO~~ 

## **Features** 

## **Pin Description** 

- 60V/200A**, 

- RDS(ON)= 3.4mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

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Top View of TO-220 

D 

## **Applications** 

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- High Efficiency Synchronous Rectification in SMPS 

- Uninterruptible Power Supply 

- High Speed Power Switching 

S N-Channel MOSFET 

**Ordering and Marking Information** SM6033NS Package Code F : TO-220 Assembly Material Operating Junction Temperature Range C : -55  to 150[o] C Handling Code Handling Code TU : Tube (50ea/tube) Temperature Range Assembly Material Package Code G : Halogen and Lead Free Device ~~f~~ e SM6033NS  F : SM6033N XXXXX - Lot Code XXXXX Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

**®** sinopower N 

## **SM6033NSF** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~PO~~|||||
|VDSS<br>~~**a**~~|Drain-Source Voltage<br>~~**a**e~~||60<br>~~e~~|V<br>~~e~~|
|VGSS<br>~~**a**~~<br>~~pp~~|Gate-Source Voltage<br>~~**a**e~~<br>~~ee~~<br>~~pp~~||±25<br>~~e~~<br>~~ee~~||
|TJ<br>~~pp~~|Maximum Junction Temperature<br>~~pp~~||150|°C|
|TSTG<br>~~pp~~<br>~~a ee~~|Storage Temperature Range<br>~~pp~~<br>~~ee~~||-55 to 150<br>~~ee~~||
|IS<br>~~pp~~<br>~~a ee~~<br>~~a~~|Diode Continuous Forward Current<br>~~pp~~<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|80<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|**Mounted on Large Heat Sink**<br>~~Ce~~|||||
|IDP<br>~~a~~<br>~~PS~~|Pulse Drain Current Tested|TC=25°C<br>~~a~~|380*<br>~~ee~~|A|
|ID<br>~~PS~~|Continuous Drain Current(Silicon Limited)|TC=25°C<br>~~a~~|200**<br>~~ee~~||
|||TC=100°C<br>~~a~~|120**<br>~~ee~~||
|ID<br>~~PS~~<br>~~a~~|Continuous Drain Current(Wire Bond Limited) <br>~~ee~~|TC=25°C<br>~~a~~<br>~~ee~~|120<br>~~ee~~<br>~~ee~~||
|PD<br>~~i~~<br>~~SESE~~|Maximum Power Dissipation<br>~~SESE~~|TC=25°C<br>~~a~~|250<br>~~a~~|W<br>~~SESE~~|
|||TC=100°C<br>~~a~~<br>~~SESE~~|100<br>~~a~~<br>~~SESE~~||
|RθJC<br>~~SESE~~|Thermal Resistance-Junction to Case<br>~~SESE~~||0.5<br>~~SESE~~|°C/W<br>~~SESE~~|
|RθJA<br>~~SESE~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~SESE~~<br>~~ee~~||62.5<br>~~SESE~~<br>~~ee~~||
|EAS<br>~~SESE~~<br>~~a~~|Avalanche Energy, Single Pulsed<br>~~SESE~~|L=0.5mH<br>~~SESE~~|625<br>~~SESE~~|mJ<br>~~SESE~~|



Note *：Pulse width limited by safe operating area. 

Note **：Calculated continuous current based on maximum allowable junction temperature. Bonding wire limitation current is 120A. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**SM6033NSF** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

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a Symbol  Parameter  Test Conditions Min. Typ. Max. Unit<br>Static Characteristics<br>a BVDSS Drain-Source Breakdown Voltage  VGS=0V, IDS=250µA 60  -  -  V<br>a ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient VGS=0V, IDS=250µA -  0.06 -  V/°C<br>VDS =48V, VGS=0V  -  -  1<br>IDSS Zero Gate Voltage Drain Current  µA<br>eea VGS(th) Gate Threshold Voltage  VDS =VGS, IDS a TJ=250=85°C ee µA 2 -  3 -  30 4  V<br>a IGSS Gate Leakage Current  VGS=±25V, VDS=0V -  -  ±100 nA<br>a RDS(ON) a Drain-Source On-state Resistance  VGS=10V, IDS=40A  -  2.9  3.4 mΩ<br>Diode Characteristics<br>a VSD a Diode Forward Voltage  ISD=20A, VGS=0V  -  0.8  1.1 V<br>trr Reverse Recovery Time  IDS=40A,  -  48  -  ns<br>Qrr Reverse Recovery Charge  dlSD/dt=100A/µs  -  72  -  nC<br>e Dynamic Characteristics se es [ b] A ere<br>ce ee ee eee<br>a RG ee Gate Resistance  VMHz GS=0V,VDS=0V,F=1 -  1.4  -  Ω<br>C iss Input Capacitance  -  4850 6300<br>VGS=0V,  pT<br>ee ee<br>Coss Output Capacitance  VDS =30V,  -  1100 -  pF<br>a ee Frequency=1.0MHz P|<br>Crss Reverse Transfer Capacitance  -  260 -<br>ee P|<br>td(ON) Turn-on Delay Time  -  22  40<br>ee ee po<br>Tr Turn-on Rise Time  VDD=30V, RL=30Ω, -  18  33<br>ee ee IDS=1A, VGEN=10V,  | ns<br>a td(OFF) Turn-off Delay Time  RG=6Ω po -  82  150<br>Tf Turn-off Fall Time  -  90  160<br>rr ee a<br>a Gate Charge Characteristics [ b]<br>Q g Total Gate Charge  -  90  130<br>ee Qgs Gate-Source Charge  VIDSDS=40A =30V, VGS=10V, PT -  23  -  nC<br>rr Pt<br>Qgd Gate-Drain Charge  -  21  -<br>rr ee a<br>Note a：Pulse test ; pulse width≤300µs, duty cycle≤2%.<br>Note b：Guaranteed by design, not subject to production testing.<br>**----- End of picture text -----**<br>


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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM6033NSF** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

**Drain Current** 

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300 140<br>120<br>250<br>100<br>200<br>80<br>150<br>60<br>100<br>40<br>50<br>20<br>TC=25oC TC=25 o C,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>1000 5<br>1<br>10ms Duty = 0.5<br>100<br>100ms<br>0.2<br>0.1<br>1s<br>0.1 0.05<br>10<br>0.02<br>DC<br>0.01<br>0.01<br>1<br>Single Pulse<br>0.1 TC=25oC 1E-3 Mounted on minimum pad RθJA : 62.5oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100<br> VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM6033NSF** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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200<br>V GS = 5.5,6,7,8,9,10V<br>175<br>150<br>125 5V<br>100<br>75<br>50<br>4.5V<br>25<br>4V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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14<br>I DS =40A<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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3.6<br>3.4<br>3.2<br>V =10V<br>3.0 GS<br>2.8<br>2.6<br>2.4<br>2.2<br>0 40 80 120 160 200<br>ID - Drain Current (A)<br>[.] Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**SM6033NSF** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.0<br>V = 10V<br>GS<br>1.8  IDS = 40A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>R ON @T j =25 o C: 2.9m Ω<br>0.4 a<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>8000<br>Frequency=1MHz<br>7000<br>6000<br>5000 Ciss<br>4000<br>3000<br>2000<br>Coss<br>1000<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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200<br>100<br>T =150 o C<br>j<br>10<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 30V<br>9 DS<br> I = 40A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** 

## **SM6033NSF** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>O c= = -— S| SS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>y i =<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**®** 

## **SM6033NSF** 

## **Package Information** 

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TO-220<br>**----- End of picture text -----**<br>


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E A<br>E/2 A1 E1<br>l<br>b e c A2<br>b2<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 - 6.35 - 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>=~<br>Note: Follow JEDEC TO-220 AB.<br>Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com<br>Rev. A.2 - January, 2014<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**®** sinopower Vv 

**SM6033NSF** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - January, 2014 

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**SM6033NSF** 

**®** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=S==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~————=——~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

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