SM6028NSKP

SM6028NSKP, Single MOSFET, N Channel, 63V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 63
Package: View
VGS (±V): 25
VTH(V) typ.: 3
ID (A) TA=25: 10
ID (A) TC=25: 50
Rg (Ω) typ.: 1
Ciss (pF) typ.: 1550
Coss (pF) typ.: 218
Crss (pF) typ.: 93
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 10.8
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
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SM6028NSKP ®<br> N-Channel Enhancement Mode MOSFET<br>Features Pin Description<br>• 63V/50A, [D] [D]<br>D [D]<br>         RDS(ON)=10.8mΩ (max.) @ VGS=10V<br>•      Reliable and Rugged<br>•      Lead Free and Green Devices Available S [S] [S] [G] Pin 1<br>(RoHS Compliant)<br>DFN5x6-8<br>(5,6,7,8)<br>DD DD<br>Applications<br>(4) G<br>•      Secondary Side Synchronous Rectification<br>•      DC-DC Converter<br>•      Motor Control : ;<br>S S S<br>•      Load Switching ( 1, 2, 3 )<br>**----- End of picture text -----**<br>


N-Channel MOSFET 

**Ordering and Marking Information** 

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SM6028NS Package Code<br>     KP : DFN5x6-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code Assembly Material<br>    G : Halogen and Lead Free Device<br>SM6028NS  KP : SM6028 XXXXX - Lot Code<br>XXXXX<br>|<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

**®** sinopower MA 

**SM6028NSKP** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~a~~<br>~~Re~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)<br>~~Re~~<br>~~a~~<br>~~a~~|||||
|VDSS<br>~~Rees~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||63<br>~~es~~<br>~~a~~<br>|V<br>~~es~~<br>~~a~~<br><br>~~i~~|
|VGSS<br>~~es~~<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~es~~<br><br>||±25<br>~~es~~<br>~~a~~<br><br>~~i~~<br>||
|TJ<br>~~es~~<br>~~aee~~<br>~~a~~|Maximum Junction Temperature<br>~~es~~<br>~~ee~~<br>||150<br>~~es~~<br>~~a~~<br>~~ee~~<br>~~i~~<br>|°C<br>~~es~~<br>~~a~~<br>~~ee~~<br>~~i~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~i~~<br>~~ee~~||
|IS<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|25<br>~~i~~<br>~~ee~~<br>~~ee~~|A<br>~~i~~<br>|
|ID<br>~~i~~<br>~~a~~|Continuous Drain Current<br>~~i~~<br>|TC=25°C<br>~~ee~~|50<br>~~ee~~||
|||TC=100°C<br>~~ee~~<br>~~a~~<br>|32<br>~~ee~~<br>~~a~~<br>||
|IDM<br>~~a~~|Pulsed Drain Current<br>|TC=25°C<br>~~a~~<br>|200<br>a<br>~~a~~<br>||
|PD<br>~~app~~|Maximum Power Dissipation<br>~~pp~~|TC=25°C<br>~~a~~<br>~~pp~~|52<br>~~a~~<br>~~pp~~|W<br>~~pp~~|
|||TC=100°C<br>~~pp~~<br>~~a~~|20.8<br>~~pp~~<br>~~a~~||
|RθJC<br>~~a~~<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~<br>~~a~~|SteadyState<br>~~ee~~<br>~~eee~~|2.4<br>~~ee~~<br>~~eee~~|°C/W<br>~~ee~~<br>~~eee~~|
|ID<br>~~a~~<br>~~ee~~|Continuous Drain Current<br>~~a~~<br>~~ee~~|TA=25°C<br>~~eee~~|10<br>~~eee~~|A<br>~~eee~~|
|||TA=70°C<br>~~eee~~<br>~~a~~|8<br>~~eee~~<br>~~a~~||
|PD<br>~~a~~<br>~~ee~~|Maximum Power Dissipation<br>~~a~~<br>~~ee~~|TA=25°C<br>~~eee~~<br>~~a~~<br>~~e~~<br>~~a~~|2<br>~~eee~~<br>~~a~~<br>~~e~~~~**e**~~<br>|W<br>~~eee~~<br>~~**e**~~<br>~~ee~~|
|||TA=70°C<br>~~a~~<br>~~e~~<br>~~a ~~<br>~~ee~~|1.3<br>~~a~~<br>~~e~~~~**e**~~<br> ~~e~~<br>~~ee~~||
|RθJA<br>~~ee~~<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>~~ee~~|t≤10s<br>~~a~~<br>~~ee~~<br>~~ee~~|25<br>~~a~~<br>~~ee~~<br>~~ee~~|°C/W<br>~~ee~~<br>~~ee~~|
|||Steady State<br>~~ee~~<br>~~ee~~<br>~~a~~|60<br>~~ee~~<br>~~ee~~<br>~~a~~||
|IAS<br>b<br>~~a~~<br>~~PR~~|Avalanche Current, Singlepulse(L=0.5mH)<br>~~ee ~~||20<br> ~~ee~~|A<br>~~ee~~|
|EAS<br>b<br>~~PR~~|Avalanche Energy, Singlepulse(L=0.5mH)||100|mJ|



## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|~~a~~|~~es~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~a~~<br>~~es~~<br>~~Pe~~<br>~~a~~<br>~~es ee~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~es ee~~|VGS=0V, IDS=250µA<br>~~ee~~||63|-|-|V|
|IDSS<br>~~a~~<br>~~a~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~es ee~~|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~—|~~||-<br>~~ee~~<br>||-<br>~~ee~~<br>~~ft~~|1<br>~~ee~~<br>~~ft~~|µA<br>~~ee~~<br>~~ft~~|
||||TJ=85°C<br>~~ee~~<br>~~—|~~|**-**<br>~~ee~~<br>||**-**<br>~~ee~~<br>~~ft~~|30<br>~~ee~~<br>~~ft~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~— |~~||2<br>||3<br>~~ft~~|4<br>~~ft~~|V<br>~~ft~~|
|IGSS<br>~~a~~|Gate Leakage Current<br>~~es ee~~|VGS=±25V, VDS=0V<br>~~ee~~||-|-|±100|nA|
|RDS(ON)<br>c<br>~~a~~|Drain-Source On-state Resistance<br>~~es ee~~|VGS=10V, IDS=25A<br>~~ee~~||-|9.0|10.8|mΩ|



Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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2 

## **SM6028NSKP** 

## **®** sinopower WN 

## **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Diode Characteristics**<br>~~PR~~|||||||
|VSD<br>c<br>~~PR~~<br>~~a~~|Diode Forward Voltage<br>|ISD=25A, VGS=0V<br><br>~~A~~|-<br><br>~~ees~~|0.8<br><br>~~ees ee~~|1.3<br><br>~~ee~~|V<br><br>~~ee~~|
|trr<br>~~PRes~~<br>~~a~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~<br>~~a~~|ISD=25A, dlSD/dt=100A/µs<br>~~es~~<br>~~A~~<br>~~ee~~|-<br>~~es~~<br>~~ees~~<br>~~|~~|30<br>~~es~~<br>~~ees ee~~<br>~~|~~|-<br>~~es~~<br>~~ee~~<br>~~|~~|ns<br>~~es~~<br>~~ee~~<br>~~|~~|
|Qrr<br>~~es~~<br>~~a~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~<br>~~a~~||-<br>~~es~~<br>~~ees~~<br>~~|~~|40<br>~~es~~<br>~~ees ee~~<br>~~|~~|-<br>~~es~~<br>~~ee~~<br>~~|~~|nC<br>~~es~~<br>~~ee~~<br>~~|~~|
|**Dynamic Characteristics**<br>d<br>~~A~~<br>~~ees ee~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~a~~<br>~~Pa~~|||||||
|RG<br>~~a~~<br>~~Paa~~|Gate Resistance<br>~~ee~~<br>~~a~~<br>~~ee~~|VGS=0V,VDS=0V, f=1MHz<br>~~ee~~<br>~~ee~~|-<br>~~|~~<br>~~po~~|1.0<br>~~|~~<br>~~po~~|-<br>~~|~~<br>~~po~~|Ω<br>~~|~~|
|Ciss<br>~~Paa~~<br>~~ee~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~po~~<br>~~St~~|1550<br>~~po~~<br>~~St~~|2170<br>~~po~~<br>~~St~~|pF|
|Coss<br>~~a~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~po~~<br>~~St~~<br>~~ee~~|218<br>~~po~~<br>~~St~~<br>~~ee~~|-<br>~~po~~<br>~~St~~<br>~~ee~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~St~~<br>~~ee~~<br>~~|~~|93<br>~~St~~<br>~~ee~~<br>~~|~~|-<br>~~St~~<br>~~ee~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~es~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~|~~<br>~~pf~~|20<br>~~ee~~<br>~~|~~<br>~~pf~~|36<br>~~ee~~<br>~~|~~<br>~~pf~~|ns|
|tr<br>~~a~~<br>~~es~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~pf~~<br>~~ee~~|9.5<br>~~|~~<br>~~pf~~<br>~~ee~~|17<br>~~|~~<br>~~pf~~<br>~~ee~~||
|td(OFF)<br>~~es~~<br>~~ee~~<br>~~a~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~||-<br>~~pf~~<br>~~ee~~<br>~~|~~|34<br>~~pf~~<br>~~ee~~<br>~~|~~|61<br>~~pf~~<br>~~ee~~<br>~~|~~||
|tf<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~ee~~<br>~~|~~|20<br>~~ee~~<br>~~|~~|36<br>~~ee~~<br>~~|~~||
|**Gate Charge Characteristics**<br>d<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~re~~<br>~~|~~|||||||
|Qg<br>~~re~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=25A|-<br>~~|~~<br>~~ae~~|29<br>~~|~~<br>~~ae~~|41<br>~~|~~<br>~~ae~~|nC|
|Qgs<br>~~re~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~||-<br>~~|~~<br>~~ae~~<br>~~eo~~|8<br>~~|~~<br>~~ae~~<br>~~eo~~|-<br>~~|~~<br>~~ae~~<br>~~eo~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~||-<br>~~ae~~<br>~~eo~~|7<br>~~ae~~<br>~~eo~~|-<br>~~ae~~<br>~~eo~~||



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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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sinopower VA **®** 

**SM6028NSKP** 

## **Typical Operating Characteristics** 

**Drain Current** 

**Power Dissipation** 

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60 60<br>50 50<br>40 40<br>30 30<br>20 20<br>10 10<br>0 TC=25oC 0 TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperaturej - Junction Temperature- Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>500 2<br>1 Duty = 0.5<br>100 10µs 0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>10 100µs<br>0.01<br>0.01<br>1ms<br>1 10ms<br>DC 1E-3 Single Pulse<br>Mounted on 1in 2 pad<br>0.1 Bi TC=25oC 1E-4 RθJC :2.4oC/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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60<br>50<br>40<br>30<br>20<br>10<br>TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperaturej - Junction Temperature- Junction Temperature<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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## **SM6028NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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150<br>VGS=7,8,9,10V<br>120 6V<br>90<br>5.5V<br>60<br>5V<br>30<br>4.5V<br>0<br>0 1 2 3 4 5 6<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

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21<br>I =25A<br>DS<br>18<br>15<br>12<br>9<br>6<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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20<br>16<br>12<br>V =10V<br>GS<br>8<br>4<br>0<br>0 20 40 60 80 100 120<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.8<br>I DS  =250µA<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0 ss<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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## **SM6028NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 25A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 Zs RON@Tj=25oC: 9mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>2400<br>Frequency=1MHz<br>2100<br>1800<br>Ciss<br>1500<br>1200<br>900<br>600<br>Coss<br>300 Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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100<br>T =150oC<br>10 j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


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Gate Charge<br>10<br>V =30V<br>DS<br>9  I =25A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM6028NSKP** 

## **®** sinopower WA 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS orn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>oe<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM6028NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>saga<br>E1 E<br>A<br>C<br>**----- End of picture text -----**<br>


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SYM MILLIMETERS DFN5x6-8 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX. 4.6<br>A 0.90 1.20 0.035 0.047<br>So 0.77<br>B 0.3 0.51 0.012 0.020<br>ee C 0.19 0.25 0.007 0.010<br>D 4.80 5.30 0.189 0.209<br>D1 4.00 4.40 0.157 0.173<br>E 5.90 6.20 0.232 0.244 3.6<br>===<br>E1 5.50 5.80 0.217 0.228 6.1<br>e 1.27 BSC 0.050 BSC<br>F 0.05 0.30 0.002 0.012<br>F1 0.35 0.75 0.014 0.030<br>G 0.05 0.30 0.002 0.012<br>0.5 1.27<br>G1 0.35 0.75 0.014 0.030<br>H 3.34 3.9 0.131 0.154<br>K 0.762 - 0.03 -<br>UNIT: mm<br>Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.<br>              Mold flash or protrusions shall not exceed 10 mil.<br>0.61<br>1.16<br>1.18<br>0.71<br>**----- End of picture text -----**<br>


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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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sinopower **®** WA 

**SM6028NSKP** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>| Wy <//<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|0.10<br>2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



(mm) 

9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

_www.sinopowersemi.com_ 

sinopower **®** YX 

**SM6028NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

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_www.sinopowersemi.com_ 

**®** 

## **SM6028NSKP** 

## **Classification Reflow Profiles** 

**Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak** 100 °C 150 °C Temperature min (Tsmin) 150 °C 200 °C Temperature max (Tsmax) 60-120 seconds 60-120 seconds Time (Tsmin to Tsmax) (ts) Average ramp-up rate 3 °C/second max. 3°C/second max. (Tsmax to TP) Liquidous temperature (TL) 183 °C 217 °C Time at liquidous (tL) 60-150 seconds 60-150 seconds Peak package body Temperature * See Classification Temp in table 1 See Classification Temp in table 2 (Tp) Time (tP)** within 5°C of the specified 20** seconds 30** seconds classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=>~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~—————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2014 

_www.sinopowersemi.com_ 

11
Updated at February 12, 2024
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