SM6018NSKP

SM6018NSKP, Single MOSFET, N Channel, 60V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 60
5V max.: 50
Package: View
VGS (±V): 20
VTH(V) typ.: 2
ID (A) TC=25: 24
Ciss (pF) typ.: 530
Coss (pF) typ.: 85
Crss (pF) typ.: 40
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 40
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
## **SM6018NSKP** 

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N-Channel Enhancement Mode MOSFET **Features Pin Configuration •** 60V/24A,[D][D] D[D] RDS(ON) = 40mΩ (max.) @ VGS = 10V RDS(ON )= 50mΩ (max.) @ VGS = 5V **•** Reliable and Rugged S[S][S][G] Pin 1 **•** Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) (5,6,7,8) DD DD **Applications •** DC to DC Converter (4) G **•** Load Switching S S S ( 1, 2, 3 ) N-Channel MOSFET **Ordering and Marking Information** SM6018NS Package Code KP : DFN5x6-8 Operating Junction Temperature Range Assembly Material C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel (2500ea/reel) Package Code Assembly Material ~~om~~ G : Halogen and Lead Free Device SM6018NS  KP : SM6018 XXXXX - Lot Code XXXXX ~~Et~~ Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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**®** sinopower WN 

**SM6018NSKP** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)<br><br>~~oeie~~<br>~~a~~|||||
|VDSS<br>~~ee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||60<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>~~ie~~<br><br>~~ie~~|
|VGSS<br>~~ee~~<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br><br>||±20<br>~~ee~~<br>~~oe~~<br><br>~~oe~~<br>||
|TJ<br>~~aee~~<br>~~a~~|Maximum Junction Temperature<br>~~ee~~<br>||150<br>~~oe ~~<br>~~ee~~<br>~~oe~~<br>|°C<br> ~~ie~~<br>~~ee~~<br>~~ie~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>||-55 to 150<br>~~ee~~<br>~~oe~~<br>||
|IS<br>~~ee~~<br>~~aa~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|12<br>~~ee~~<br>~~oe ~~<br>~~ee~~|A<br>~~ee~~<br> ~~ie~~<br>~~eee~~|
|IDP<br>~~i~~<br>~~pop~~|300μs Pulse Drain Current Tested<br>~~i~~<br>~~pop~~|TC=25°C<br>~~i~~<br>~~ee~~<br>|96<br>~~i~~<br>~~ee~~<br>||
|||TC=100°C<br>~~i~~<br>~~ee~~<br>|60<br>~~i~~<br>~~ee~~<br>||
|ID<br>~~pop~~|Continuous Drain Current<br>~~pop~~|TC=25°C<br>~~ee~~<br>~~es~~|24<br>~~ee~~<br>~~ee~~||
|||TC=100°C<br>~~ee ~~<br>~~es~~<br>~~es~~|15<br> ~~ee~~<br>~~ee~~<br>~~eee~~||
|PD<br><br>~~ae~~|Maximum Power Dissipation<br><br>~~ae~~|TC=25°C<br>~~es ~~<br>~~ae~~<br>~~es~~<br>~~es~~|50<br> ~~ee~~<br>~~ae~~<br>~~eee~~<br>~~ee~~|W<br>~~ae~~<br>~~eee~~|
|||TC=100°C<br>~~ae~~<br>~~es~~<br>~~es~~|20<br>~~ae~~<br>~~eee~~<br>~~ee~~||
|RθJC<br>~~ss~~|Thermal Resistance-Junction to Case<br>~~es ~~<br>~~es ~~<br>~~ss~~||2.5<br> ~~eee~~<br> ~~ee~~<br>~~ss~~|°C/W<br>~~eee~~<br>~~ss~~|
|RθJA<br>~~ss~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ss~~||50<br>~~ss~~||
|EAS<br>~~a~~|Drain-Source Avalanche Energy, L=0.5mH||22|mJ|



**Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~ee~~||||||||
|BVDSS<br>Drain-Source Breakdown Volta<br>~~a~~|Drain-Source Breakdown Voltage<br>~~ee~~|VGS=0V,IDS=250µA||60|-|-|V|
|IDSS<br>Zero Gate Voltage Drain Current<br>~~a~~<br>~~PR~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~a~~<br>|VDS=48V, VGS=0V<br>TJ=125°C<br>~~ee~~<br>~~|~~<br>||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~<br>~~|~~<br>|
||||TJ=125°C<br>~~ee~~<br>~~|~~<br>|-<br>~~ee~~<br>~~|~~<br>|-<br>~~ee~~<br>~~|~~<br>|30<br>~~ee~~<br>~~|~~<br>||
|VGS(th)<br>Gate Threshold Volta<br>~~PR~~|Gate Threshold Voltage<br>|VDS=VGS,IDS=250µA<br>~~|~~<br>||1<br>~~|~~<br>|2<br>~~|~~<br>|3<br>~~|~~<br>|V<br>~~|~~<br>|
|IGSS<br>Gate Leaka<br>~~PRa~~|Gate Leakage Current<br>|VGS=±16V, VDS=0V<br>~~|~~<br>||-<br>~~|~~<br>|-<br>~~|~~<br>|±10<br>~~|~~<br>|µA<br>~~|~~<br>|
|RDS(ON)<br>a<br>Drain-Source On-state Resistance<br>~~rr~~|Drain-Source On-state Resistance<br>~~rr~~|VGS=10V, IDS=12A<br>~~rr~~||-<br>~~rr~~<br>~~ee~~|32<br>~~rr~~<br>~~ee~~|40<br>~~rr~~<br>~~ee~~|mΩ<br>~~rr~~<br>~~ee~~<br>~~ee~~|
|||VGS=5V, IDS=11A<br>~~rr~~<br>~~ee~~||-<br>~~rr~~<br>~~ee~~<br>~~ee~~|-<br>~~rr~~<br>~~ee~~<br>~~ee~~|50<br>~~rr~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~ee~~||||||||
|VSD<br>a<br>Diode Forward Volta<br>~~aee~~<br>~~a~~|Diode Forward Voltage<br>~~ee~~|ISD=12A, VGS=0V<br>~~ee~~<br>~~a~~||-<br>~~ee~~<br>~~se~~|0.8<br>~~ee~~<br>~~se~~|1.3<br>~~ee~~<br>~~se~~|V<br>~~ee~~|
|trr<br>Reverse Recover<br>~~es~~<br>~~a~~|Reverse RecoveryTime<br>~~es~~|IDS=12A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~||-<br>~~es~~<br>~~se~~|30<br>~~es~~<br>~~se~~|-<br>~~es~~<br>~~se~~|ns<br>~~es~~|
|Qrr<br>Reverse Recover<br>~~es~~<br>~~a~~|Reverse RecoveryCharge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~se~~<br>~~ot~~|35<br>~~es~~<br>~~se~~<br>~~ottf~~|-<br>~~es~~<br>~~se~~<br>~~tf~~|nC<br>~~es~~<br>~~tf~~|



Copyright  Sinopower Semiconductor, Inc. 2 Rev. A.3 - November, 2013 

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**®** sinopower WN 

## **SM6018NSKP** 

## **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|~~PR~~|~~a~~||||||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~<br>~~ce~~|**Parameter**<br>~~a~~|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Dynamic Characteristics**<br>b<br>~~PR a~~<br>~~cea~~<br>~~—~~<br>~~|~~<br>~~|~~|||||||
|Ciss<br>~~cea~~<br>~~a~~|Input Capacitance|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~—~~<br>~~—~~<br>~~—~~|-<br>~~—~~<br>~~|~~<br>~~—|~~|530<br>~~|~~<br>~~ft~~|-<br>~~ft~~|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~a~~|Output Capacitance||-<br>~~—~~<br>~~|~~<br>~~—|~~<br>~~—|~~|85<br>~~|~~<br>~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~||
|Crss<br>~~a~~<br>~~a~~<br>~~rs~~|Reverse Transfer Capacitance||-<br>~~— |~~<br>~~—|~~|40<br>~~ft~~<br>~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~<br>~~ft~~||
|td(ON)<br>~~a~~<br>~~a~~<br>~~rs~~<br>~~a~~|Turn-on Delay Time|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~—~~<br>~~|~~<br>~~—~~<br>~~—~~<br>~~ee~~<br>~~|~~|-<br>~~— |~~<br>~~|~~<br>~~—~~||8<br>~~ft~~<br>~~|~~<br>~~ft~~<br>~~ft~~|15<br>~~ft~~<br>~~|~~<br>~~ft~~<br>~~ft~~|ns<br>~~|~~|
|Tr<br>~~a~~<br>~~rs~~<br>~~a~~<br>~~a~~|Turn-on Rise Time||-<br>~~|~~<br>~~—~~|<br>~~—|~~|8<br>~~|~~<br>~~ft~~<br>~~ft~~<br>~~|~~|15<br>~~|~~<br>~~ft~~<br>~~ft~~<br>~~|~~||
|td(OFF)<br>~~rs~~<br>~~a~~<br>~~a~~|Turn-off Delay Time<br>~~ee~~||-<br>~~—~~ |<br>~~—|~~<br>~~|~~|28<br>~~ft~~<br>~~ft~~<br>~~|~~<br>~~|~~<br>~~|~~|51<br>~~ft~~<br>~~ft~~<br>~~|~~<br>~~|~~<br>~~||~~||
|Tf<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~—|~~<br>~~|~~|22<br>~~|~~<br>~~|~~<br>~~|~~|41<br>~~|~~<br>~~|~~<br>~~||~~||
|**Gate Charge Characteristics**<br>b<br>~~— |~~<br>~~| |~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~| |~~<br>~~a~~<br>~~ee~~<br>~~—|~~<br>~~|~~|||||||
|Qg<br>~~a~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~a~~<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=12A<br>~~a~~<br>~~—~~<br>~~ee~~<br>~~—~~<br>~~ff~~|-<br>~~a~~<br>~~—|~~<br>~~—~~<br>~~|~~|12<br>~~a~~<br>~~|~~<br>~~|~~|17<br>~~a~~|nC<br>~~a~~|
|Qgs<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~||-<br>~~— |~~<br>~~—~~<br>~~|~~|3<br>~~|~~<br>~~|~~|-||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~||-<br>~~—~~<br>~~|~~<br>~~ff~~|3<br>~~|~~<br>~~ff~~|-<br>~~ff~~||



Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%. Note b : Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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sinopower UN **®** 

**SM6018NSKP** 

## **Typical Operating Characteristics** 

## **Drain Current** 

**Power Dissipation** 

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60 28<br>24<br>50<br>20<br>40<br>16<br>30<br>12<br>20<br>8<br>10<br>4<br>0 TC=25oC 0 TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC) Tj - Junction Temperature (oC)j - Junction Temperature (oC) - Junction Temperature (oC)oC)C)<br>Safe Operation Area Thermal Transient Impedance<br>500 2<br>1 Duty = 0.5<br>100<br>0.2<br>0.1<br>300us<br>0.05<br>10<br>1ms<br>10ms 0.1 0.02<br>100ms<br>1s 0.01<br>1<br>DC<br>Single Pulse<br>Mounted on 1in2 pad<br>0.1 TC=25oC 0.01 RθJA :50oC/W<br>AA afl<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100<br>VDS - Drain-Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P  - Drain Current (A)<br>IDD<br> - Drain Current (A)<br>ID<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


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28<br>24<br>20<br>16<br>12<br>8<br>4<br>TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (oC)j - Junction Temperature (oC) - Junction Temperature (oC)oC)C)<br> - Drain Current (A)<br>IDD<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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## **SM6018NSKP** 

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## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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30 70<br>25 60<br>VGS=4.5,5,6,7,8,9,10V<br>4V<br>20 50<br>V =5V<br>GS<br>15 40<br>V =10V<br>GS<br>10 3.5V 30<br>5 20<br>3V<br>0 Be 10<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>100 1.6<br>I DS =12A I DS =250µA<br>90<br>1.4<br>80<br>1.2<br>70<br>1.0<br>60<br>0.8<br>50<br>0.6<br>40<br>0.4<br>30<br>20 0.2 _<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate-Source Voltage (V) Tj - Junction Temperature (oC)<br>)<br>Ω<br> - Drain Current (A)  - On Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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## **SM6018NSKP** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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2.5<br>V  = 10V<br>GS<br> I  = 12A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 ee RON@Tj=25oC: 32mΩ<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (oC)<br>Capacitance<br>720<br>Frequency=1MHz<br>640<br>560<br>Ciss<br>480<br>400<br>320<br>240<br>160<br>Coss<br>Crss<br>80<br>0<br>0 5 10 15 20 25 30 35 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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30<br>10<br>T =150oC<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source-Drain Voltage (V)<br>- Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


## **Gate Charge** 

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10<br>V = 30V<br>9 DS<br> I = 12A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10 12<br>QG - Gate Charge (nC)<br>- Gate-Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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## **SM6018NSKP** 

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## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>y i<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

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**®** 

## **SM6018NSKP** 

## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>ae<br>E1 E<br>A<br>C<br>**----- End of picture text -----**<br>


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RECOMMENDED LAND PATTERN<br>**----- End of picture text -----**<br>


|**SYM**<br>**BOL**||**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|A||0.90|||1.20||0.035||0.047|||||||||||||||||||||||||||||||0.77||||||
|B||0.3|||0.51||0.012||0.020|||||||||||||||||||||||||||||||||||||
|C||0.19|||0.25||0.007||0.010|||||||||||||||||||||||||||||||||||||
|D<br>D1||4.80<br>4.00|||5.30<br>4.40||0.189<br>0.157||0.209<br>0.173|0.61||||||||||||||||||||||||||||||||||||
|E||5.90|||6.20||0.232||0.244||||||||||||||||||||||||||||||||3.6|||||
|E1<br>e<br>F<br>F1||5.50<br>0.05<br>1.27 BSC<br>0.35|1.27 BSC||5.80<br>0.75<br>0.30||0.050 BSC<br>0.217<br>0.228<br>0.002<br>0.014<br>0.030<br>0.012|||1.18 1.16||||||||||||||||||||||||||||||||||6.1||
|G<br>H<br>G1||3.34<br>0.05<br>0.35|||3.9<br>0.30<br>0.75||0.131<br>0.002<br>0.014||0.154<br>0.012<br>0.030|||||||||||0.5||||||||||||1.27|||||||||0.71|||||
|K||0.762|||-||0.03||-|||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||UNIT: mm||||||
|Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.|||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.|||||||||||||||||||||||||||||||||||||||||
|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|||||||||||||||||||||||||||||||||||||||||||



8 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

## **SM6018NSKP** 

**==> picture [4 x 4] intentionally omitted <==**

**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

**==> picture [315 x 336] intentionally omitted <==**

**----- Start of picture text -----**<br>
OD0 | P0 P2 P1 A<br>TO ©<br>)» @ fe 6<br>K0 B A0 OD1 B A<br>SECTION A-A<br>tr SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.3±0.05|6.5±0.10|5.3±0.10|1.4±0.10|



9 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

**®** sinopower VN 

**SM6018NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

10 

**®** 

## **SM6018NSKP** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. 

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~_—S===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—~~ **Reliability Test Program** 

## **Reliability Test Program** 

|**Test item**<br>~~——————~~|**Method**<br>~~——————~~|**Description**<br>~~——————~~|
|---|---|---|
|SOLDERABILITY<br>~~——————~~|JESD-22,B102<br>~~——————~~|5 Sec,245°C<br>~~——————~~|
|HTRB<br>~~——————~~|JESD-22, A108<br>~~——————~~|1000 Hrs, 80% of VDS max @ Tjmax<br>~~——————~~|
|HTGB<br>~~——————~~|JESD-22,A108<br>~~——————~~|1000 Hrs,100%of VGS max@Tjmax<br>~~——————~~|
|PCT<br>~~——————~~|JESD-22,A102<br>~~——————~~|168 Hrs, 100%RH, 2atm, 121°C<br>~~——————~~|
|TCT<br>~~——————~~|JESD-22,A104<br>~~——————~~|500 Cycles,-65°C~150°C<br>~~——————~~|



## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - November, 2013 

_www.sinopowersemi.com_ 

11
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