SM6014NSF

SM6014NSF, Single MOSFET, N Channel, 60V, TO-220

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 60
Package: View
VGS (±V): 25
Tube: View
VTH(V) typ.: 3
ID (A) TA=25: 7.4
ID (A) TC=25: 40
Rg (Ω) typ.: 3
Ciss (pF) typ.: 885
Coss (pF) typ.: 135
Crss (pF) typ.: 60
Quality Report: View
RON(mΩ max) 10V max.: 18
Delivery and price
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Lead time	30 days
Datasheet
sinopower UN **®** 

**Ordering and Marking Information** 

## **SM6014NSF** 

## N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 60V/40A, 

- RDS(ON)= 18mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

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Top View of TO-220 

D 

## **Applications** 

- Application for Welding Machine. 

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SM6014NS Package Code<br>    F : TO-220<br>Assembly Material Operating Junction Temperature Range<br>    C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>    TU : Tube (50ea/tube)<br>Temperature Range<br>Assembly Material<br>Package Code G : Halogen and Lead Free Device<br>p e<br>SM6014NS  F : SM6014NS XXXXX - Lot Code<br>XXXXX<br>Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free<br>-<br>requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in<br>homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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1 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

## **SM6014NSF** 

## **®** sinopower WN 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|**Common Ratings**|||||
|VDSS<br>~~oe~~|Drain-Source Voltage<br>~~oe~~||60<br>~~oe~~|V<br>~~oe~~<br>~~ee~~|
|VGSS<br>~~oe~~<br>~~a~~<br>~~ee~~|Gate-Source Voltage<br>~~oe~~<br>~~en~~<br>~~ee~~||±25<br>~~oe~~<br>~~en~~<br>~~ee~~||
|TJ<br>~~ee~~|Maximum Junction Temperature<br>~~ee~~||150<br>~~ee~~|°C<br>~~ee~~|
|TSTG<br>~~ee~~<br>~~a ee~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~ee~~||
|IS<br>~~ee~~<br>~~a ee~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~<br>~~a~~|TC=25°C<br>~~ee~~<br>~~ee~~<br>~~a~~|20<br>~~ee~~<br>~~ee~~<br>~~a~~|A<br>~~ee~~<br><br>~~ee~~|
|ID<br>~~[~~<br>~~a~~|Continuous Drain Current<br>~~[~~<br>~~ee~~<br>|TC=25°C<br>~~[~~<br>~~ee~~<br>|40<br>~~[~~<br>~~ee~~<br>||
|||TC=100°C<br>~~[~~<br>~~ee~~<br>|25<br>~~[~~<br>~~ee~~<br>||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br><br>~~ee~~|160<br>~~ee~~<br><br>~~ee~~||
|PD<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~a~~<br>~~ee~~<br>~~es es~~|TC=25°C<br>~~a~~<br>~~ee~~<br>~~ee eee~~|59.5<br>~~a~~<br>~~ee~~<br>~~eee~~|W<br>~~a~~<br>~~ee~~|
|||TC=100°C<br>~~a~~<br>~~ee~~<br>~~ee eee~~<br>~~es~~|23<br>~~a~~<br>~~ee~~<br>~~eee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~<br>~~es es~~|Steady State<br>~~ee ~~<br>~~ee eee~~<br>~~es~~<br>~~es~~|2.1<br> ~~ee~~<br>~~eee~~<br>~~e~~~~**ee**~~|°C/W<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~es es~~<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~es~~<br>~~ee~~<br>~~es~~<br>~~ee e~~|7.4<br>~~ee~~<br>~~e~~~~**ee**~~<br>~~e~~|A<br>~~ee~~<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~es~~<br>~~ee e~~<br>~~ee ee~~|5.8<br>~~ee~~<br>~~e~~~~**ee**~~<br>~~e~~<br>~~ee~~||
|PD<br>~~a~~<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~<br>~~**e**~~<br>|TA=25°C<br>~~es ~~<br>~~ee e~~<br>~~a~~<br>~~ee ee~~<br>~~**e**e eee~~|2<br> ~~e~~~~**ee**~~<br>~~e~~<br>~~a~~<br>~~ee~~<br>~~eee~~|W<br>~~a~~<br>~~ee~~|
|||TA=70°C<br>~~a~~<br>~~ee ee~~<br>~~**e**e eee~~<br>~~es ee~~|1.25<br>~~a~~<br>~~ee~~<br>~~eee~~<br>~~ee~~||
|RθJA<br>~~a e~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~**e**~~<br>~~e~~|Steady State<br>~~ee ee~~<br>~~**e**e eee~~<br>~~es ee~~|62.5<br>~~ee~~<br>~~eee~~<br>~~ee~~|°C/W<br>~~ee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse|L=0.5mH<br>~~es ee~~|15<br>~~ee~~|A|
|EAS<br>b<br>~~a es~~|Avalanche Energy, Single pulse<br>~~es~~|L=0.5mH<br>~~es~~|56<br>~~es~~|mJ<br>~~es~~|



Note a：Pulse width limited by max. junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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## **SM6014NSF** 

## **®** sinopower N 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~a~~|**Test Conditions**<br>~~a~~|**Min.**<br>~~a~~|**Typ.**<br>~~a~~|**Max.**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~a~~<br>~~PR~~||||||||
|BVDSS<br>~~PR~~~~**e**~~|Drain-Source Breakdown Voltage<br>~~**e**e~~|VGS=0V, IDS=250µA<br>~~ee~~||60<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|IDSS<br>~~PR~~~~**e**~~|Zero Gate Voltage Drain Current<br>~~**e**e~~|VDS=48V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~pt~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~pt~~|-<br>~~ee~~<br>~~pt~~|-<br>~~ee~~<br>~~pt~~|30<br>~~ee~~<br>~~pt~~||
|VGS(th)<br>~~**e**~~|Gate Threshold Voltage<br>~~**e**e~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~e~~||2<br>~~ee~~<br>~~e~~|3<br>~~ee~~<br>~~e~~|4<br>~~ee~~<br>~~e~~|V<br>~~ee~~<br>~~e~~|
|IGSS<br>~~a~~|Gate Leakage Current|VGS=±25V, VDS=0V||-|-|±100|nA|
|RDS(ON)<br>c <br>~~a~~|Drain-Source On-state Resistance<br>|VGS=10V, IDS=16A<br>||-<br>|15<br>|18<br>|mΩ<br>|
|**Diode Characteristics**<br>||||||||
|VSD<br>c<br>~~ee~~|Diode Forward Voltage<br>~~ee~~|ISD=16A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8<br>~~ee~~|1.1<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~**a**~~|Reverse Recovery Time<br>~~**a**~~|ISD=16A, dlSD/dt=100A/µs<br>~~ee~~||-<br>~~ee~~|20<br>~~ee~~|-<br>~~ee~~|ns<br>~~ee~~|
|Qrr<br>~~**a**~~|Reverse Recovery Charge<br>~~**a**~~|||-<br>~~ee~~<br>~~re~~|17<br>~~ee~~<br>~~re~~|-<br>~~ee~~<br>~~re~~|nC<br>~~ee~~<br>~~re~~|
|**Dynamic Characteristics**<br>d<br>~~ee~~<br>~~a~~||||||||
|RG<br>~~ee~~<br>~~a~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|3<br>~~ee~~|-<br>~~ee~~|Ω<br>~~ee~~|
|Ciss<br>~~a~~<br>~~es~~<br>~~rs~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~<br>~~|~~||-<br>~~ee~~<br>~~ft~~<br>~~ee~~|885<br>~~ft~~<br>~~ee~~|1150<br>~~ft~~<br>~~ee~~|pF|
|Coss<br>~~a~~<br>~~es~~<br>~~rs~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~ft~~<br>~~ee~~<br>~~|~~||135<br>~~ft~~<br>~~ee~~<br>~~|~~|-<br>~~ft~~<br>~~ee~~<br>~~|~~||
|Crss<br>~~es~~<br>~~rs~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~ft~~<br>~~ee~~<br>~~|~~||60<br>~~ft~~<br>~~ee~~<br>~~|~~|-<br>~~ft~~<br>~~ee~~<br>~~|~~||
|td(ON)<br>~~rs~~<br>~~a~~<br>~~es~~<br>~~es~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~|~~<br>~~ee~~||-<br>~~ee~~<br>~~|~~ |<br>~~Sf~~<br>~~ee~~|10<br>~~ee~~<br>~~|~~<br>~~Sf~~<br>~~ee~~|18<br>~~ee~~<br>~~|~~<br>~~Sf~~<br>~~ee~~|ns|
|tr<br>~~es~~<br>~~es~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~Sf~~<br>~~ee~~<br>~~|||~~|6<br>~~Sf~~<br>~~ee~~<br>~~|||~~|11<br>~~Sf~~<br>~~ee~~<br>~~|||~~||
|td(OFF)<br>~~es~~<br>~~es~~<br>~~a~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~Sf~~<br>~~ee~~<br>~~|||~~|20<br>~~Sf~~<br>~~ee~~<br>~~|||~~|36<br>~~Sf~~<br>~~ee~~<br>~~|||~~||
|tf<br>~~es~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~|||~~<br>~~Ff~~|12<br>~~ee~~<br>~~|||~~<br>~~Ff~~|22<br>~~ee~~<br>~~|||~~<br>~~Ff~~||
|**Gate Charge Characteristics**<br>d<br>~~ee~~<br>~~|||~~<br>~~a~~<br>~~Ff~~<br>~~a~~<br>~~ee~~<br>~~Pf~~||||||||
|Qg<br>~~a~~<br>~~es~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=16A<br>~~ee~~<br>~~ee~~<br>~~|~~||-<br>~~Pf~~<br>~~|~~|17<br>~~Pf~~<br>~~|~~|24<br>~~Pf~~<br>~~|~~|nC|
|Qgs<br>~~a~~<br>~~es~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~Pf~~<br>~~|~~<br>~~|~~|5<br>~~Pf~~<br>~~|~~<br>|-<br>~~Pf~~<br>~~|~~<br>||
|Qgd<br>~~es~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~|~~<br>~~|tf~~|6<br>~~|~~<br>~~tf~~|-<br>~~|~~<br>~~tf~~||



Note c：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note d：Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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**®** ower VN 

## **SM6014NSF** 

## **Typical Operating Characteristics** 

**Drain Current** 

**Power Dissipation** 

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70 48<br>60<br>40<br>50<br>32<br>40<br>24<br>30<br>16<br>20<br>8<br>10<br>0 TC=25 o C 0 TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>300 3<br>1 Duty = 0.5<br>100<br>at at a 0.2<br>100µs 0.1<br>0.1<br>0.05<br>10<br>0.02<br>1ms 0.01 —f 0.01<br>1 DC<br>1E-3<br>Single Pulse<br>0.1 TC=25oC 1E-4 RθJC :2.1 o C/W<br>0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br> VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>“if<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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48<br>40<br>32<br>24<br>16<br>8<br>TC=25oC,VG=10VC=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>      Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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4 

**®** 

## **SM6014NSF** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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100<br>VGS=7,8,9,10V<br>80 6V<br>60<br>5.5V<br>40<br>5V<br>20<br>4.5V<br>0<br>0 1 2 3 4 5 6<br> VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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40<br>I =16A<br>DS<br>35<br>30<br>25<br>20<br>15<br>10<br>4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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35<br>30<br>25<br>20<br>V =10V<br>GS<br>15<br>10<br>5<br>0<br>0 20 40 60 80<br>ID - Drain Current (A)<br>[.] Gate Threshold Voltage<br>1.4<br>IDS =250µA<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 =<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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5 

**SM6014NSF** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

**Drain-Source On Resistance** 

**Source-Drain Diode Forward** 

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2.5<br>V  = 10V<br>GS<br> I DS  = 16A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 = RON@Tj=25oC: 15mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>1400<br>Frequency=1MHz<br>1200<br>1000<br>Ciss<br>800<br>600<br>400<br>200 Crss Coss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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100<br>10 o<br>T =150 C<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 30V<br>9 DS<br> I = 16A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 3 6 9 12 15 18<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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**®** 

## **SM6014NSF** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>O c= = -— SS SS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>y<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>i =<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

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7 

**®** 

## **SM6014NSF** 

## **Package Information** 

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TO-220<br>**----- End of picture text -----**<br>


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E A<br>E/2 A1 E1<br>l<br>b e c A2<br>b2<br>SYM MILLIMETERS TO-220 INCHES RECOMMENDED LAND PATTERN<br>BOL MIN. MAX. MIN. MAX.<br>A 3.56 4.83 0.140 0.190 2.54<br>A1 0.51 1.40 0.020 0.055<br>A2 2.03 2.92 0.080 0.115<br>b 0.38 1.02 0.015 0.040<br>b2 1.14 1.78 0.045 0.070<br>c 0.36 0.61 0.014 0.024<br>D 14.22 16.51 0.560 0.650<br>D1 8.38 9.02 0.330 0.355 UNIT: mm<br>D2 12.19 13.65 0.480 0.537<br>E 9.65 10.67 0.380 0.420<br>E1 6.86 8.89 0.270 0.350<br>e 2.54 BSC 0.100 BSC<br>H1 5.84 6.86 0.230 0.270<br>L 12.70 14.73 0.500 0.580<br>L1 - 6.35 - 0.250<br>P 3.53 4.09 0.139 0.161<br>Q 2.54 3.43 0.100 0.135<br>=~<br>Note: Follow JEDEC TO-220 AB.<br>Copyright  Sinopower Semiconductor, Inc. 8 www.sinopowersemi.com<br>Rev. A.1 - March, 2014<br>R0.52<br>P<br>Q<br>H1<br>D2<br>D<br>D1<br>L1<br>L<br>**----- End of picture text -----**<br>


**®** sinopower Vv 

**SM6014NSF** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

9 

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**SM6014NSF** 

**®** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. 

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm** ~~**[3 ]**~~ **Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S—————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.1 - March, 2014 

_www.sinopowersemi.com_ 

10
Updated at February 12, 2024
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