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SM4953K
SM4953K, Dual MOSFET, P Channel, -30V, SOP-8
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- Manufacturer: Sinopower
- Product type: Dual MOSFETs
- Cfg.: Dual P
- BV(V): -30
- Package: View
- VGS (±V): 25
- VTH(V) typ.: -1.5
- ID (A) TA=25: -4.9
- Rg (Ω) typ.: 8
- Ciss (pF) typ.: 625
- Coss (pF) typ.: 100
- Crss (pF) typ.: 60
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 60
- RON(mΩ max) 4.5V max.: 95
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SM4953K** Dual P-Channel Enhancement Mode MOSFET ## **Features** - -30V/-4.9A , - RDS(ON)=53mΩ(typ.) @ VGS=-10V - RDS(ON)=80mΩ(typ.) @ VGS=-4.5V - Reliable and Rugged - Lead Free and Green Device Available - (RoHS Compliant) - ESD Protection ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems ## **Pin Description** **==> picture [134 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> D1<br>D1<br>D2<br>D2<br>S1<br>G1<br>S2<br>G2<br>Top View of SOP-8<br>D1 D1 D2 D2<br>(8) (7) (6) (5)<br>G1 G2<br>(2) (4)<br>S1 (1) S2 (3)<br>**----- End of picture text -----**<br> **==> picture [89 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> P-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering and Marking Information** **==> picture [403 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> Package Code<br>SM4953<br> K : SOP-8<br>Assembly Material Operating Junction Temp. Range<br> C : -55 to 150 C°<br>Handling Code<br>Handling Code<br>Temp. Range<br> TR : Tape & Reel (2500ea/reel)<br>LE<br>Package Code<br>Assembly Material<br> L : Lead Free Device<br> G: Halogen and Lead Free Device<br>SM4953 K : SM4953<br>XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br> Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 1 ## **SM4953K** ## **Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) |**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**| |---|---|---|---|---| |VDSS|Drain-Source Voltage||-30|V| |VGSS|Gate-Source Voltage||±25|| |ID*|Continuous Drain Current|VGS=-10V|-4.9|A| |IDM*|Pulsed Drain Current||-20|| |IS*|Diode Continuous Forward Current||-2|A| |TJ|Maximum Junction Temperature||150|°C| |TSTG|Storage Temperature Range||-55 to 150|| |PD*|Power Dissipation for Single Operation|TA=25°C|2|W| |||TA=100°C|0.8|| |RθJA*|Thermal Resistance-Junction to Ambient||62.5|°C/W| Note: 2 *Surface Mounted on 1in pad area, t ≤ 10sec. ## **Electrical Characteristics** (TA = 25°C unless otherwise noted) |**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Condition**<br>~~ee~~<br>~~ee~~|**Test Condition**<br>~~ee~~<br>~~ee~~|**SM4953K**<br>~~ee~~<br>~~ee~~|**SM4953K**<br>~~ee~~<br>~~ee~~|**SM4953K**<br>~~ee~~<br>~~ee~~|**Unit**<br>~~ee~~| |---|---|---|---|---|---|---|---| |||||**Min.**<br>~~ee~~<br>~~ee~~<br>~~|~~|**Typ.**<br>~~ee~~<br>~~ee~~<br>~~|~~|**Max.**<br>~~ee~~<br>~~|~~|| |**Static Characteristics**<br>~~ee~~<br>~~ee~~<br>~~eses~~|||||||| |BVDSS<br>~~e~~|Drain-Source Breakdown Voltage<br>~~es~~|VGS=0V,IDS=250µA<br>~~es~~<br>~~ee~~||-30<br>~~es~~<br>~~ee~~|-<br>~~ee~~|-|V| |IDSS<br>~~e~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~es~~<br>~~a~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~es~~<br>~~a~~<br>~~ee~~<br>~~| ~~||-<br>~~es~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-1<br>~~a~~|µA<br>~~a~~| ||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~| ~~|-<br>~~a~~<br>~~ee~~<br> ~~ft~~|-<br>~~a~~<br>~~ee~~<br>~~ft~~|-30<br>~~a~~<br>~~ft~~|| |VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~||-1<br>~~ee~~<br>~~a~~|-1.5<br>~~ee~~<br>~~a~~|-2.3<br>~~a~~|V<br>~~a~~| |IGSS<br>~~a~~|Gate Leakage Current<br>~~a~~|VGS=±20V, VDS=0V<br>~~a~~||-<br>~~a~~|-<br>~~a~~|±10<br>~~a~~|µA<br>~~a~~| |RDS(ON)<br>a <br>~~a~~<br>~~a~~|Drain-Source On-state Resistance<br>~~a~~<br>~~es~~|VGS=-10V, IDS=-4.9A<br>~~a~~||-<br>~~a~~<br>~~ee~~|53<br>~~a~~<br>~~ee~~|60<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~<br>~~es~~| |||VGS=-4.5V, IDS=-3.6A<br>~~a~~<br>~~ee~~<br>~~es~~||-<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~es~~|80<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~es~~|95<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~es~~|| |VSD<br>a<br>~~a~~|Diode Forward Voltage<br>~~es~~|ISD=-1.7A, VGS=0V<br>~~es~~||-<br>~~ee ~~<br>~~es~~|-0.8<br> ~~ee ~~<br>~~es~~|-1.3<br> ~~ee~~<br>~~es~~|V<br>~~es~~| |**Gate Charge Characteristics**<br>b<br>~~eses~~<br>~~rs~~<br>~~ee~~<br>~~|~~<br>~~|~~|||||||| |Qg<br>~~rs~~|Total Gate Charge<br>~~ee~~|VDS=-15V, VGS=-10V,<br>IDS=-4.9A<br>~~ee~~<br>~~|~~||-<br>~~|~~<br>~~|~~|11.6|16|nC| |Qgs<br>~~rs~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~ft~~|1.3<br>~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~|| |Qgd<br>~~a~~|Gate-Drain Charge|||-<br>~~ot~~|2.5<br>~~ot~~<br>~~ft~~|-<br>~~ot~~<br>~~ft~~|| Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 2 ## **SM4953K** **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) |**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Condition**<br>~~ee~~<br>~~eee|~~|**SM4953K**<br>~~ee~~<br>~~|~~|**SM4953K**<br>~~ee~~<br>~~|~~|**SM4953K**<br>~~ee~~<br>~~|~~|**Unit**<br>~~ee~~| |---|---|---|---|---|---|---| ||||**Min.**<br>~~ee~~<br>~~|fT~~|**Typ.**<br>~~ee~~<br>~~fT~~|**Max.**<br>~~ee~~<br>~~fT~~|| |**Dynamic Characteristics**<br>b<br>~~eee |~~||||||| |RG<br>~~ee~~<br>~~a~~|Gate Resistance<br>~~ee~~<br>~~a~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|8<br>~~ee~~<br>|-<br>~~ee~~<br>|Ω<br>~~ee~~| |Ciss<br>~~a~~<br>~~es~~|Input Capacitance<br>~~a~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|fT~~<br>~~|~~|625<br>~~fT~~<br>|-<br>~~fT~~<br>|pF| |Coss<br>~~a~~<br>~~es~~<br>~~a~~|Output Capacitance<br>~~a~~||-<br>~~|fT~~<br>~~|||~~<br>~~|ft~~|100<br>~~fT~~<br>~~||~~<br>~~ft~~|-<br>~~fT~~<br>~~||~~<br>|| |Crss<br>~~es~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance||-<br>~~fT~~<br>~~|~~<br>~~|ft~~<br>~~|~~<br>~~|~~|60<br>~~fT~~<br><br>~~ft|~~<br>~~|~~|-<br>~~fT~~<br><br>~~|~~<br>~~|~~|| |td(ON)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=-15V, RL=15Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~ee~~<br>~~|~~|-<br>~~| ft~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|6<br>~~ft~~<br>~~|~~<br>~~|~~|12<br><br>~~|~~<br>~~|~~|ns| |tr<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on Rise Time||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~**|**~~|12<br>~~|~~<br>~~|~~|23<br>~~|~~<br>~~|~~|| |td(OFF)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~|~~|25<br>~~|~~<br>|46<br>~~|~~<br>|| |tf<br>~~a~~<br>~~a~~<br>~~SS~~|Turn-off Fall Time<br>~~ee~~<br>~~SS~~||-<br>~~**|**~~<br>~~|~~~~**f**~~|6<br>~~**f**T~~|12<br>~~T~~|| |trr<br>~~a~~<br>~~SS~~<br>~~a~~|Reverse RecoveryTime<br>~~ee~~<br>~~SS~~|IDS=-4.9A,<br>dlSD/dt=100A/µs<br>~~ee~~<br>~~|~~<br>~~ee~~|-<br>~~|~~~~**f**~~<br>~~ee~~|14<br>~~**f**T~~<br>~~ee~~<br>~~|~~|-<br>~~T~~<br>~~ee~~<br>~~|ff~~|ns<br>~~ee~~<br>~~ff~~| |Qrr<br>~~SS~~<br>~~a~~|Reverse RecoveryCharge<br>~~SS~~||-<br>~~**f**~~<br>~~ee~~|5<br>~~**f**T~~<br>~~ee~~<br>~~|~~|-<br>~~T~~<br>~~ee~~<br>~~t~~<br>~~|ff~~|nC<br>~~ee~~<br>~~t~~<br>~~ff~~| Notes: a : Pulse test ; pulse width≤300µs, duty cycle≤2%. b : Guaranteed by design, not subject to production testing. Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 3 ## **SM4953K** ## **Typical Characteristics** **Power Dissipation** **==> picture [192 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25oC<br>A<br>0.0 a<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10 300µs<br>1ms<br>10ms<br>1<br>100ms<br>1s<br>0.1<br>DC<br>T =25oC<br>0.01 A<br>0.01 0.1 1 10 100<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br> ## **Drain Current** **==> picture [192 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>4.5<br>3.0<br>1.5<br>TA=25oC,VG=-10V<br>0.0<br>0 20 40 60 80 100 120 140 160<br> Tj - Junction Temperature (°C)<br>Thermal Transient Impedance<br>2<br>1<br>Duty = 0.5<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2 pad<br>1E-3 RθJA : 62.5 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 30<br>Square Wave Pulse Duration (sec)<br> Drain Current (A)<br>D -<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 4 ## **SM4953K** ## **Typical Characteristics (Cont.)** **==> picture [432 x 533] intentionally omitted <==** **----- Start of picture text -----**<br> Output Characteristics Drain-Source On Resistance<br>20 120<br>V GS = -5, -6, -7, -8, -9, -10V<br>18 110<br>-4V<br>16 100 V = -4.5V<br>GS<br>14 90<br>12 80<br>10 70<br>8 -3V 60 V GS = -10V<br>6 50<br>4 40<br>-2V<br>2 30<br>0 a 20<br>0 1 2 3 4 5 6 7 8 0 2 4 6 8 10 12 14 16 18 20<br>-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)<br>Drain-Source On Resistance Gate Threshold Voltage<br>160 1.8<br>I D =4.9A [=] I DS = -250µA<br>1.6<br>140<br>1.4<br>120<br>1.2<br>100<br>1.0<br>80<br>0.8<br>60<br>0.6<br>40 0.4<br>20 0.2<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>D<br>-I<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON) Normalized Threshold Vlotage<br>R<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 5 ## **SM4953K** ## **Typical Characteristics (Cont.)** **==> picture [434 x 533] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source On Resistance Source-Drain Diode Forward<br>2.00 20<br>V = -10V<br>GS<br>1.75 I DS = -4.9A 10<br>T =150oC<br>1.50 j<br>1.25<br>1.00 T =25oC<br>j<br>1<br>0.75<br>0.50<br>0.25<br>RON@Tj=25 o C: 53mΩ<br>0.00 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br> Tj - Junction Temperature (°C) -VSD - Source-Drain Voltage (V)<br>Capacitance Gate Charge<br>900 10<br>Frequency=1MHz V = -10V<br>D<br>800 9 I = -4.9A<br>D<br>8<br>700<br>Ciss 7<br>600<br>6<br>500<br>5<br>400<br>4<br>300<br>3<br>200<br>2<br>Coss<br>100 1<br>Crss<br>0 Se— 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10 12<br>-VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance S<br>-I<br>C - Capacitance (pF) - Gate-source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 6 _www.sinopowersemi.com_ ## **SM4953K** ## **Avalanche Test Circuit and Waveforms** **==> picture [166 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [150 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br> ## **Switching Time Test Circuit and Waveforms** **==> picture [167 x 83] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br> **==> picture [145 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> td(on) tr td(off) tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 7 ## **SM4953K** ## **Package Information** ## **SOP-8** **==> picture [452 x 528] intentionally omitted <==** **----- Start of picture text -----**<br> -T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>rae fl<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.75 - 0.069<br>=<br>A1 0.10 0.25 0.004 0.010<br>A2 1.25 - 0.049 - 2.2<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>D 4.80 5.00 0.189 0.197 5.74<br>———— a<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>L 0.40 1.27 0.016 0.050 0.8<br>0 0° 8 ° 0 ° 8 ° 0.635<br>—— ee UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br> 2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br> Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br> 3. Dimension “E” does not include inter-lead flash or protrusions.<br> Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 8 ## **SM4953K** ## **Carrier Tape & Reel Dimensions** **==> picture [315 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> a OD0 P0 fe P2 P1 el A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>Lae SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br> |**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**| |---|---|---|---|---|---|---|---|---| |**SOP-8**|330.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20 1.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.05| ||**P0**|**P1**|**P2**<br>**D0**|**0**<br>**D1**|**T**|**A0**|**B0**|**K0**| ||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.40±0.20|5.20±0.20|2.10±0.20| (mm) Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 9 **SM4953K** ## **Taping Direction Information** ## **SOP-8** USER DIRECTION OF FEED ## **Classification Profile** Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 10 **SM4953K** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~——~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——~~ ## **Reliability Test Program** **Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C ## **Customer Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright Sinopower Semiconductor, Inc. Rev. A.3 - June, 2014 _www.sinopowersemi.com_ 11
Updated at February 12, 2024
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