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SM4844NHK
SM4844NHK, Single MOSFET, N Channel, 30V, SOP-8
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|---|---|
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Datasheet
## **SM4 844NHK**
## **®** sinopower WN
## N-Channel Enhancement Mode MOSFET
## **Features**
- 30V/15.5A,
- RDS(ON)= 4.4m Ω (max.) @ VGS= 10V
- RDS(ON)= 6.8m Ω (max.) @ VGS= 4.5V
- Lower Qg and Qgd for high-speed switching
- Lower R to Minimize Conduction Losses DS(ON)
- Reliable and Rugged
- Lead Free and Green Devices Available
- (RoHS Compliant)
## **Applications**
- Power Management in Notebook Computer,
- Portable Equipment and Battery Powered Systems.
## **Pin Description**
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D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>**----- End of picture text -----**<br>
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Top View of SOP-8<br>**----- End of picture text -----**<br>
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( 5,6,7,8 )<br>D D D D<br>(4)<br>G<br>::<br>S S S<br>(1, 2, 3)<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>
## **Ordering and Marking I nform ation**
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SM4844NH Package Code<br> K : SOP-8<br>Operating Junction Temperature Range<br>Assembly Material<br> C : -55 to 150 [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br> TR : Tape & Reel<br>Package Code Assembly Material<br> G : Halogen and Lead Free Device<br>00-000 oe<br>4844NH<br>SM4844NH K : XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
## **SM4 844NHK**
## **®** sinopower VN
## **Absolute Maxim um Ratings** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**|**Unit**|
|---|---|---|---|---|
|**Common Ratings **(TA= 25°C Unless Otherwise Noted)<br>~~$$~~<br>~~—_-——<~~<br>~~|~~|||||
|VDSS<br>~~$$~~|Drain-Source Voltage<br>~~$$~~<br>~~—_-——<~~||30<br>~~—_-——<~~|V<br>~~|~~<br><br>~~ae~~|
|VGSS<br>~~$$~~<br>~~a~~<br>~~a~~|Gate-Source Voltage<br>~~$$~~<br>~~—_-——<~~<br>||±20<br>~~—_-——<~~<br><br>~~ae~~||
|TJ<br>~~$$~~<br>~~es~~<br>~~a~~|Maximum Junction Temperature<br>~~$$~~<br>~~—_-——<~~<br>~~es~~||150<br>~~—_-——<~~<br>~~es~~<br>~~ae~~|°C<br>~~|~~<br>~~es~~<br>~~ae~~|
|TSTG<br>~~es~~<br>~~a~~|Storage Temperature Range<br>~~es~~||-55 to 150<br>~~es~~<br>~~ae~~||
|IS<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~|TA=25°C<br>~~ee~~|2<br>~~ae~~<br>~~ee~~|A<br>~~ae~~|
|ID<br>~~ee~~<br>~~ee~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~|15.5<br>~~ee~~||
|||TA=70°C<br>~~ee~~<br>~~a~~<br>~~ee~~|12.4<br>~~ee~~<br>~~a~~||
|IDM<br>a<br>~~a~~<br>~~ee~~|Pulsed Drain Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|37<br>~~ee~~||
|PD<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|1.6<br>~~ee~~|W<br>~~ee~~<br>~~a~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~<br>~~a~~|1.02<br>~~ee~~<br>~~a~~||
|RθJA<br>~~ee~~<br>~~|~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>~~|~~|t≤10s<br>b<br>~~ee~~<br>~~|~~|32<br>~~|~~|°C/W|
|||Steady State<br>c<br>~~|~~<br>~~a~~|78<br>~~|~~<br>~~a~~||
|RθJL<br>~~a~~<br>~~a~~|Thermal Resistance-Junction to Lead|Steady State|20<br>~~ee~~||
|IAS<br>d<br>~~a~~<br>~~a~~|Avalanche Current, Single pulse (L=0.1mH)<br>~~ee~~||29<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|EAS<br>d<br>~~a~~|Avalanche Energy, Single pulse (L=0.1mH)||42<br>~~ee~~|mJ|
Note a: Pulse width limited by max. junction temperature.
- b: t ≤ 10s and surface mounted on FR-4 board using 1in2 pad, 2 oz Cu.
- c: Steady time = 999s and surface mounted on FR-4 board using 1in2 pad, 2 oz Cu.
- d: UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C).
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**SM4 844NHK**
## **®** sinopower VN
## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~a~~<br>~~Ce~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>~~Ceaee~~|Drain-Source Breakdown Voltage<br>~~ee ee~~|VGS=0V,IDS=250µA<br>~~ee~~||30<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|
|BVDSSt<br>~~ee~~|Drain-Source Breakdown Voltage<br>(transient)<br>~~ee ee~~|VGS=0V, ID(aval)=29A<br>Tcase=25°C, ttransient=100ns<br>~~ee~~<br>~~eee~~||34<br>~~ee~~<br>~~eee~~|-<br>~~ee~~|-<br>~~ee~~|~~ee~~|
|IDSS<br>~~ee~~<br>~~ee~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee ee~~<br>~~ee~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS,IDS=250µA<br>~~eee~~||1.4<br>~~eee~~<br>~~ee~~|1.7|2.5|V|
|IGSS<br>~~a~~|Gate Leakage Current<br>|VGS=±20V, VDS=0V<br>~~eee~~<br>||-<br>~~eee~~<br>|-<br>|±100<br>|nA<br>|
|RDS(ON)<br>e<br>~~ee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=10V, IDS=13A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|3.7<br>~~ee~~<br>~~ee~~|4.4<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=9A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.3<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.8<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Gfs<br>~~ee~~<br>~~ee~~|Forward Transconductance<br>~~ee~~<br>~~ee~~|VDS=7.6 , ID=8A<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee ~~<br>~~ee~~|22<br>~~ee~~<br>~~ee~~<br> ~~ee ~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br> ~~ee~~<br>~~ee~~|S<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~PO~~||||||||
|VSD<br>e<br>~~aSS~~|Diode Forward Voltage<br>~~SS~~|ISD=10A, VGS=0V||-|0.78|1.1|V|
|trr<br>~~SS~~|Reverse RecoveryTime<br>~~SS~~|Isd=13A, dlSD/dt=100A/µs<br>VDD=15V,||-|52|-|ns|
|Qrr<br>~~SS~~<br>~~a~~|Reverse RecoveryCharge<br>~~SS~~|||-<br>~~a~~|30<br>~~a~~|-<br>~~a~~|nC<br>~~a~~|
|**Dynamic Characteristics**<br>f<br>~~SS~~<br>~~PC~~||||||||
|RG<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz||-|1.1|2|Ω|
|Ciss<br>~~a~~|Input Capacitance|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~a~~<br>~~a~~||-<br>~~|~~|1300<br>~~|~~|1690<br>~~|~~|pF<br>~~|~~|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~a~~|||-<br>~~a~~<br>~~|~~|900<br>~~a~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~||
|Crss<br>~~a~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~a~~|||-<br>~~a~~<br>~~{|~~|65<br>~~a~~<br>~~{|~~<br>~~|~~<br>~~|~~|85<br>~~a~~<br>~~{|~~<br>~~|~~<br>~~|~~||
|td(ON)<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~a~~<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=1Ω<br>~~a~~||-<br>~~a~~<br>~~{|~~<br>~~|~~<br>~~**|**~~|13.6<br>~~a~~<br>~~{|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~{|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~**|**~~|12.6<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~|||-<br>~~**|** ~~|24.4<br>~~|~~<br> ~~|~~|-<br>~~|~~<br>~~|~~||
|tf<br>~~a~~|Turn-off Fall Time|||-<br>~~|~~|38.4<br>~~|~~|-<br>~~|~~||
|**Gate Charge Characteristics**<br>f<br>~~Pe~~<br>~~eeee~~<br>~~a~~||||||||
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=15V, VGS=10V,<br>IDS=13A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|19.4<br>~~ee~~|26<br>~~ee~~|nC<br>~~ee~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~|~~|
|Qg<br>~~a~~|Total Gate Charge|VDS=15V, VGS=4.5V,<br>IDS=13A<br>~~ee ~~<br>~~a~~<br>~~a~~||-<br> ~~ee~~<br>~~|~~|9.4<br>~~|~~|-<br>~~|~~||
|Qgs<br>~~a~~|Gate-Source Charge<br>~~a~~|||-<br>~~a~~<br>~~|~~|3.9<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~||
|Qgd<br>~~a~~|Gate-Drain Charge<br>~~a~~|||-<br>~~a~~<br>~~|~~|2.2<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~||
|Qgth<br>~~a~~|Threshold Gate Charge|||-<br>~~|~~|2.1<br>~~|~~|-<br>~~|~~||
Note e: Pulse test. Pulse width ≤ 300 µ s, duty cycle ≤ 2%. f: Guaranteed by design, not subject to production testing.
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**SM4 844NHK**
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## **Typical Operating Characteristics**
**Power Dissipation**
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1.8<br>1.5<br>1.2<br>0.9<br>0.6<br>0.3<br>TA=25oC<br>0.0 a<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>300 µ s<br>1ms<br>1<br>10ms<br>1s<br>10s<br>0.1 TA=25oC DC 100ms<br>0.01 0.1 1 10 100 300<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Drain Current**
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18<br>15<br>12<br>9<br>6<br>3<br>0 TA=25oC,VG=10V<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Thermal Transient Impedance**
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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2 pad<br>1E-3 R θ JA :78oC/W<br>1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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**SM4 844NHK**
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## **Typical Operating Characteristics ( Cont.)**
**Output Characteristics**
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36<br>VGS=3.5,4,5,6,7,8,9,10V<br>30<br>24<br>3V<br>18<br>12<br>6<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>18<br>I =13A<br>DS<br>15<br>12<br>9<br>6<br>3<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Drain-Source On Resistance**
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10<br>8<br>6 V =4.5V<br>GS<br>V =10V<br>4 GS<br>2<br>0<br>0 6 12 18 24 30 36<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>1.6<br>I DS =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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**SM4 844NHK**
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## **Typical Operating Characteristics ( Cont.)**
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Drain-Source On Resistance<br>2.0<br>V GS = 10V<br>1.8 I DS = 13A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 i R ON @T j =25 o C: 3.7m Ω<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Capacitance<br>2100<br>Frequency=1MHz<br>1800<br>1500<br>Ciss<br>1200<br>Coss<br>900<br>600<br>300<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>
**Source-Drain Diode Forward**
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40<br>10<br>T =150oC<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 15V<br>DS<br>9<br> I = 13A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**®** sinopower MA
**SM4 844NHK**
## **Typical Operating Characteristics ( Cont.)**
## **Transfer Characteristics**
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30<br>25<br>20<br>15<br>10<br>T =25oC<br>j<br>T =125oC<br>5 j<br>0<br>0 1 2 3 4 5<br> VGS - Gate-Source Voltage<br>-Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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**SM4 844NHK**
## **®** sinopower WA.
## **Avalanche Test Circuit and W aveform s**
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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>
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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>
## **Sw it ching Tim e Test Circuit and W aveform s**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br>
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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**SM4 844NHK**
## **®** sinopower MA
## **Disclaim er**
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
## **SM4 844NHK**
## sinopower UN **®**
## **Package I nform at ion**
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-T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>HH tT Fe fl1.<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>eal,<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BOL MIN. MAX. MIN. MAX.<br>A 1.75 0.069<br>SS eee<br>A1 0.10 0.25 0.004 0.010<br>2.2<br>A2 1.25 0.049<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>D 4.80 5.00 0.189 0.197 5.74<br>=SSSna<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>“ad<br>L 0.40 1.27 0.016 0.050 0.8<br>a 0 0 ° 8 [°] 0 ° 8 [°] 0.635<br>UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br> 2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br> Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br> 3. Dimension “E” does not include inter-lead flash or protrusions.<br> Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>
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**SM4 844NHK**
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## **Carrier Tape & Reel Dim ensions**
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a v e OD0 $ P0 fe P2 P1 ele A Th<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**|**C**<br>**d**|**D**<br>**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|
|**SOP-8**|330.0±<br>2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**<br>**T**|**T**<br>**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.40±0.20|5.20±0.20|2.10±0.20|
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
sinopower **®** UX
**SM4 844NHK**
## **Taping Direction I nform at ion**
## **SOP-8**
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USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>
## **Classificat ion Profile**
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**SM4 844NHK**
**®**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=sS==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~—————~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~———~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
Updated at February 12, 2024
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