SM4331PSK

SM4331PSK, Single MOSFET, P Channel, -30V, SOP-8

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: P
BV(V): -30
Package: View
VGS (±V): 25
VTH(V) typ.: -1.8
ID (A) TA=25: -19.2
Rg (Ω) typ.: 3.4
Ciss (pF) typ.: 2790
Coss (pF) typ.: 590
Crss (pF) typ.: 433
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 7.5
RON(mΩ max) 4.5V max.: 13
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
## **SM4331PSK** 

## **®** sinopower WN 

P-Channel Enhancement Mode MOSFET 

## **Features** 

- -30V/-19.2A, 

   - RDS(ON) =7.5mΩ(max.) @ VGS =-10V 

   - RDS(ON) =13mΩ(max.) @ VGS =-4.5V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Pin Description** 

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D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>**----- End of picture text -----**<br>


Top View of  SOP-8 

- HBM ESD protection level pass 8KV 

**Note :** The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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( 5,6,7,8 )<br>DDDD<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>


P-Channel MOSFET 

## **Ordering and Marking Information** 

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SM4331PS Package Code<br>     K : SOP-8<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range<br>     TR : Tape & Reel (2500pcs/reel)<br>Package Code Assembly Material<br>o0-000 a      G : Halogen and Lead Free Device<br>4331<br>SM4331PS  K :  XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

**®** sinopower WN 

## **SM4331PSK** 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a ee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|VDSS<br>~~a ee~~<br>~~**a**~~|Drain-Source Voltage<br>~~ee~~<br>~~**a**~~||-30<br>~~ee~~<br>~~**a**~~|V<br>~~ee~~<br>~~**a**~~|
|VGSS<br>~~**a**~~|Gate-Source Voltage<br>~~**a**~~||±25<br>~~**a**~~||
|ID<br>a<br>~~eee~~<br>~~a~~|Continuous Drain Current (VGS=-10V)<br>~~eee~~|TA=25°C<br>~~eee~~<br>~~a~~|-19.2<br>~~eee~~<br>~~ae~~|A<br>~~ae~~|
|||TA=70°C<br>~~eee~~<br>~~a~~|-15.4<br>~~eee~~<br>~~ae~~||
|IDM<br>a<br>~~a~~|300µs Pulsed Drain Current(VGS=-10V)<br>~~a~~||-77*<br>~~ae~~||
|IS<br>a<br>~~a~~<br>~~a~~|Diode Continuous Forward Current<br>~~a ~~||-3<br> ~~ae~~||
|IAS<br>b<br>~~a es~~|Avalanche Current, Singlepulse<br>~~es~~|L=0.1mH<br>~~es~~|45<br>~~es~~||
|EAS<br>b<br>~~a es~~<br>~~a es~~|Avalanche Energy, Singlepulse<br>~~es~~<br>~~es~~|L=0.1mH<br>~~es~~<br>~~es~~|101<br>~~es~~<br>~~es~~|mJ<br>~~es~~|
|TJ<br>~~$$~~|Maximum Junction Temperature<br>~~$$~~||150<br>~~$$~~|°C<br>~~$$~~<br>|
|TSTG<br>~~$$~~<br>~~a~~|Storage Temperature Range<br>~~$$~~<br>||-55 to 150<br>~~$$~~<br>||
|PD<br>a<br>~~$$~~<br>~~afo~~|Maximum Power Dissipation<br>~~$$~~<br>~~fo~~|TA=25°C<br>~~$$~~<br>~~fo~~|4.2<br>~~$$~~<br>~~fo~~|W<br>~~$$~~<br>~~fo~~|
|||TA=70°C<br>~~fo~~<br>~~ee~~|2.7<br>~~fo~~<br>~~ee~~||
|RθJA<br>a,c<br>~~fo~~<br>~~i eee~~|Thermal Resistance-Junction to Ambient<br>~~fo~~<br>~~eee~~|t≤10s<br>~~fo~~<br>~~ee~~<br>~~eee~~|30<br>~~fo~~<br>~~ee~~<br>~~eee~~|°C/W<br>~~fo~~|
|||SteadyState<br>~~eee~~<br>~~ee~~|75<br>~~eee~~<br>~~ee~~||
|RθJL<br>~~a~~|Thermal Resistance-Junction to Lead<br>~~es~~|SteadyState<br>~~es~~|24<br>~~es~~||



Note *：Current limited by bond wire. Note a：Surface Mounted on 1in2 pad area, t ≤ 10sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Maximum under Steady State conditions is 75 °C/W. 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br>~~es~~<br>~~a~~|**Test Conditions**<br>~~es~~|**Test Conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~a~~<br>~~eses~~||||||||
|BVDSS<br>~~a~~<br>~~es~~|Drain-Source Breakdown Voltage<br>~~a~~<br>~~es~~|VGS=0V,IDS=-250µA<br>~~es~~||-30<br>~~es~~|-<br>~~es~~|-<br>~~es~~|V<br>~~es~~|
|IDSS<br>~~es~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~es~~<br>~~ee~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~es~~<br>~~ee~~<br>~~ff~~||-<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|-1<br>~~es~~<br>~~ee~~|µA<br>~~es~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~|-30<br>~~ee~~<br>~~ff~~||
|VGS(th)<br>~~a~~<br>~~De~~|Gate Threshold Voltage|VDS=VGS, IDS=-250µA||-1.3|-1.8|-2.3|V|
|IGSS<br>~~De~~<br>~~Pe~~|Gate Leakage Current|VGS=±20V, VDS=0V<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA|
|RDS(ON)<br>d <br>~~De~~<br>~~Pe~~<br>~~a~~|Drain-Source On-state Resistance<br>~~a~~|VGS=-10V, IDS=-19.2A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|6<br>~~ee~~<br>~~es~~|7.5<br>~~ee~~|mΩ|
|||VGS=-4.5V, IDS=-10A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|9<br>~~ee~~<br>~~es~~|13<br>~~ee~~||
|**Diode Characteristics**<br>~~Pe~~<br>~~ee~~<br>~~eees~~<br>~~a~~||||||||
|VSD<br>d<br>~~a~~<br>~~a sr~~|Diode Forward Voltage<br>~~a~~<br>~~sr~~|ISD=-1A, VGS=0V<br>~~sr~~||-<br>~~ee ~~<br>~~sr~~|-0.7<br> ~~es~~<br>~~sr~~|-1<br>~~sr~~|V<br>~~sr~~|
|trr<br>e<br>~~ee~~<br>~~a~~|Reverse RecoveryTime<br>~~ee~~<br>~~ee~~|ISD=-19.2A,<br>dlSD/dt=100A/µs<br>~~ee~~<br>~~PF~~||-<br>~~ee~~<br>~~PFfo~~|20<br>~~ee~~<br>~~fo~~|-<br>~~ee~~|ns<br>~~ee~~|
|Qrr<br>e<br>~~ee~~<br>~~a~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~PFfo~~|9<br>~~ee~~<br>~~fo~~|-<br>~~ee~~|nC<br>~~ee~~|



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**®** sinopower MA 

## **SM4331PSK** 

## **Electrical Characteristics (Cont.)** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>e|||||||
|Rg<br>~~a~~<br>~~a~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~|-<br>~~|~~|3.4<br>~~|~~|-<br>~~|~~|Ω|
|Ciss<br>~~a~~<br>~~a~~<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~<br>~~ee~~<br>|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~<br>~~—~~<br>~~ee~~<br>~~—~~|-<br>~~|~~<br>~~—|~~|2790<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|pF|
|Coss<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~—|~~<br>~~ff~~|590<br>~~|~~<br>~~|~~<br>~~ff~~|-<br>~~|~~<br>~~|~~<br>~~ff~~||
|Crss<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~| ~~<br>~~—|~~<br>~~ff~~<br>~~—|~~|433<br> ~~|~~<br>~~|~~<br>~~ff~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~ff~~||
|td(ON)<br>~~ee ~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br> ~~ee~~<br>~~ee~~|VDD=-15V, RL=15Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~ee~~<br>~~—~~<br>~~ee~~<br>~~—~~<br>~~ee~~|-<br>~~— |~~<br>~~ff~~<br>~~—|~~|17<br>~~| ~~<br>~~ff~~<br>~~|~~|-<br> ~~|~~<br>~~ff~~|ns|
|tr<br> <br>~~ee~~<br>~~a~~|Turn-on Rise Time<br> ~~ee~~<br>~~ee~~||-<br>~~ff~~<br>~~— |~~<br>~~|~~|17<br>~~ff~~<br>~~|~~<br>~~ft~~|-<br>~~ff~~<br>~~ft~~||
|td(OFF)<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~||-<br>~~|~~<br>~~|~~|90<br>~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~||
|tf<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~|~~|56<br>~~ft~~|-<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~ft~~<br>~~ft~~<br>~~a~~|||||||
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge|VDS=-15V, VGS=-10V,<br>IDS=-19.2A<br>~~—~~|-<br>~~|~~<br>~~—|~~|56<br>~~|~~<br>~~ft~~<br>~~ft~~|-<br>~~|~~<br>~~ft~~<br>~~ft~~|nC|
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge||-<br>~~—|~~<br>~~—|~~|8<br>~~ft~~<br>~~ft~~<br>~~|~~<br>~~|~~|-<br>~~ft~~<br>~~ft~~||
|Qgd<br>~~a~~|Gate-Drain Charge||-<br>~~— |~~<br>~~—|~~|15<br>~~ft~~<br>~~|~~<br>~~|~~|-<br>~~ft~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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**®** sinopower WN 

**SM4331PSK** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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5<br>4<br>3<br>2<br>1<br>T =25oC<br>A<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>300<br>100<br>300µs<br>10<br>1ms<br>10ms<br>1<br>100ms<br>1s<br>DC<br>0.1<br>0.01 TA=25oC<br>0.01 0.1 1 10 100 300<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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21<br>18<br>15<br>12<br>9<br>6<br>3<br>TA=25 o C,VG=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


**Thermal Transient Impedance** 

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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2  pad<br>1E-3 RθJA : 30 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**®** 

## **SM4331PSK** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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80<br>V GS =-5,-6,-7,-8,-9,-10V<br>70 -4V<br>60<br>50<br>40<br>-3.5V<br>30<br>20<br>10 -3V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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-VDS - Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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35<br>I DS =-19.2A<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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16<br>14<br>12<br>V =-4.5V<br>GS<br>10<br>8<br>VGS=-10V<br>6<br>4<br>2<br>0<br>0 20 40 60 80<br>-ID - Drain Current (A)<br>Gate Threshold Voltage<br>[a]<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.6<br>I DS =-250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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**®** 

## **SM4331PSK** 

## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance Source-Drain Diode Forward<br>1.8 80<br>V GS  = -10V<br> I  = -19.2A<br>1.6 DS<br>1.4 10 T =150oC<br>j<br>1.2<br>T =25 o C<br>j<br>1.0<br>1<br>0.8<br>0.6<br>RON@Tj=25 o C: 6mΩ<br>0.4 _ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>  Tj - Junction Temperature (°C)         -VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>4000 10<br>Frequency=1MHz V =-15V<br>DS<br>9<br>3500  I DS =-19.2A<br>8<br>3000<br>Ciss 7<br>2500<br>6<br>2000 5<br>4<br>1500<br>3<br>1000<br>Coss 2<br>500 Crss<br>1<br>0 0 /<br>0 5 10 15 20 25 30 0 10 20 30 40 50 60<br>-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM4331PSK** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

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sinopower WX **®** 

**SM4331PSK** 

## **Package Information** 

## **SOP-8** 

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-T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>nae - i7<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.75 - 0.069<br>SSeS ot<br>A1 0.10 0.25 0.004 0.010<br>A2 1.25 - 0.049 - 2.2<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>=——{——— D 4.80 5.00 0.189 0.197 5.74<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>L 0.40 1.27 0.016 0.050 0.8<br>———— 0 0° 8 ° 0 ° 8° 0.635<br>UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br>          2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br>              Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br>          3. Dimension “E” does not include inter-lead flash or protrusions.<br>              Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


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**®** 

## **SM4331PSK** 

## **Carrier Tape & Reel Dimensions** 

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>ba SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**<br>**D**|**D**<br>**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|
|**SOP-8**|330.0±<br>2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30 1.75|1.75±0.10|5.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**<br>**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.40±0.20|5.20±0.20|2.10±0.20|



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sinopower **®** YX 

**SM4331PSK** 

## **Taping Direction Information** 

## **SOP-8** 

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USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>


## **Classification Profile** 

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**®** 

## **SM4331PSK** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm3 **<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=sSS===~~|
|---|
|Table 2. Pb-free Process – Classification Temperatures (Tc)|
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6 mm<br>260°C<br>260°C<br>260°C<br>1.6 mm – 2.5 mm<br>260°C<br>250°C<br>245°C<br>≥2.5 mm<br>250°C<br>245°C<br>245°C<br>~~——————=—~~|
|**Reliability Test Program**|
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000 Hrs,100% of VGS max@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~S—————~~|
|**Customer Service**|



## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 

_www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - May, 2014 

11
Updated at February 12, 2024
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