SM4033NHU

SM4033NHU, Single MOSFET, N Channel, 40V, TO-252-2

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 40
Package: View
VGS (±V): 20
VTH(V) typ.: 1.7
ID (A) TA=25: 25
ID (A) TC=25: 100
Rg (Ω) typ.: 0.88
Ciss (pF) typ.: 2650
Coss (pF) typ.: 750
Crss (pF) typ.: 88
Tape & Reel: View
RON(mΩ max) 10V max.: 2.9
RON(mΩ max) 4.5V max.: 4
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Datasheet
eA **®** 

**SM403 3NHU** 

- **®** 

- N-Channel Enhancement Mode MOSFET 

- ~~pO~~ **Features Pin Description** • 40V/100A, D 

- RDS(ON)= 2.9m Ω (Max.) @ VGS=10V RDS(ON)= 4m Ω (Max.) @ VGS=4.5V S • Reliable and Rugged ~~.~~ G • Lower Qg and Qgd for high-speed switching Top View of TO-252-2 

- • Lower R to Minimize Conduction Losses DS(ON) D 

- 100% UIS + R Tested g 

- Lead Free and Green Devices Available (RoHS Compliant) 

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## **Applications** 

- SMPS Synchronous Rectification. 

- DC-DC Conversion. 

- Or-ing. 

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N-Channel MOSFET 

## **Ordering and Marking I nform ation** 

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SM4033NH Package Code<br>    U : TO-252-2<br>Assembly Material Operating Junction Temperature Range<br>Handling Code     C : -55  to 175  [o] C<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel<br>Package Code<br>Assembly Material<br>    G : Halogen and Lead Free Device<br>SM4033NH   U : SM4033NH XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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**SM403 3NHU** 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~PC~~|**Parameter**<br>~~ee~~<br>|**Parameter**<br>~~ee~~<br>|**Rating**<br>~~ee~~<br>|**Unit**<br>~~ee~~<br>|
|---|---|---|---|---|
|**Common Ratings**<br>~~PC~~<br>~~ae~~<br>~~a~~|||||
|VDSS<br>~~PCes~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||40<br>~~es~~<br>~~ae~~<br>|V<br>~~es~~<br>~~ae~~<br>~~—————————~~|
|VGSS<br>~~es~~<br>~~a—————————~~|Gate-Source Voltage<br>~~es~~<br>~~—————————~~||±20<br>~~es~~<br>~~ae~~<br>~~—————————~~||
|TJ<br>~~a—————————~~|Maximum Junction Temperature<br>~~—————————~~||175<br>~~ae~~<br>~~—————————~~|°C<br>~~ae~~<br>~~—————————~~|
|TSTG<br>~~—————————~~<br>~~a~~|Storage Temperature Range<br>~~—————————~~<br>~~ee~~<br>~~ee~~||-55 to 175<br>~~—————————~~<br>~~ee~~||
|IS<br>~~—————————~~<br>~~a~~|Diode Continuous Forward Current<br>~~—————————~~<br>~~ee~~|TC=25°C<br>~~—————————~~<br>~~ee~~<br>~~ee~~|20<br>~~—————————~~<br>~~ee~~|A<br>~~—————————~~<br>~~eee~~|
|ID<br>~~a~~|Continuous Drain Current<br>~~a~~<br>|TC=25°C<br>~~ee~~<br>~~a~~<br>~~ee~~|100<br>a<br>~~a~~<br>~~eee~~||
|||TC=100°C<br>~~a~~<br>~~ee~~|78<br>~~a~~<br>~~eee~~||
|IDM<br>b<br>~~a~~|Pulsed Drain Current<br>~~**e**e~~|TC=25°C<br>~~ee ~~<br>~~eee~~|300<br> ~~eee~~<br>~~eee~~||
|PD<br>|Maximum Power Dissipation<br>~~**e**e~~|TC=25°C<br>~~eee~~|100<br>~~eee~~|W<br>~~eee~~|
|||TC=100°C<br>~~eee~~<br>~~rr~~|50<br>~~eee~~<br>~~rr~~||
|RθJC<br><br>~~a~~<br>~~e~~|Thermal Resistance-Junction to Case<br>~~**e**e~~<br>~~e~~<br>~~ee~~|Steady State<br>~~eee~~<br>~~e~~<br>~~ee~~|1.5<br>~~eee~~<br>~~e~~<br>~~ee~~|°C/W<br>~~eee~~<br>~~e~~<br>~~ee~~|
|ID<br>c<br>~~e~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~eee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~eee~~||
|PD<br>c<br>~~e~~|Maximum Power Dissipation<br>~~ee~~<br>~~a!~~|TA=25°C<br>~~ee~~<br>~~ee ~~<br>~~a!~~<br>~~ee~~|2.72<br>~~ee~~<br> ~~eee~~<br>~~a!~~<br>~~eee~~|W<br>~~ee~~<br>~~a!~~|
|||TA=70°C<br>~~a!~~<br>~~ee~~|1.9<br>~~a!~~<br>~~eee~~||
|RθJA<br>c|Thermal Resistance-Junction to Ambient<br>~~a~~|t≤10s<br>~~ee ~~<br>~~a~~|18<br> ~~eee~~<br>~~a~~|°C/W<br>~~a~~|
|||Steady State<br>~~a~~<br>~~rr~~|55<br>~~a~~<br>~~rr~~||
|IAS<br>d<br>~~A~~|Avalanche Current, Single pulse|L=0.1mH|50|A|
|EAS<br>d<br>~~a~~|Avalanche Energy, Single pulse|L=0.1mH|125|mJ|



Note a：Max. continue current is limited by bonding wire Note b：Pulse width is limited by max. junction temperature. Note c：R θ JA steady state t=999s Note d：UIS tested and pulse width limited by maximum junction temperature 175[o] C (initial temperature Tj=25[o] C). 

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## **SM403 3NHU** 

**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**Min.**<br>~~ee~~|**Typ.**<br>~~ee~~|**Max.**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=250µA<br>~~a~~||40<br>~~a~~|-<br>~~a~~|-<br>~~a~~|V<br>~~a~~|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=32V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>||1.4<br>|1.7<br>|2.5<br>|V<br>|
|IGSS<br>~~aee~~|Gate Leakage Current<br>~~ee~~<br>~~/~~|VGS=±20V, VDS=0V<br>~~ee~~<br>~~/~~<br>~~p+}~~||-<br>~~ee~~<br>~~p+}~~|-<br>~~ee~~<br>~~p+}~~|±100<br>~~ee~~<br>~~—~~|nA<br>~~ee~~|
|RDS(ON)<br>e <br>~~Pe~~|Drain-Source On-state Resistance<br>~~/~~<br>|VGS=10V, IDS=25A<br>TJ=100°C<br>~~/~~<br>~~p+}~~<br>~~a~~<br>||-<br>~~p+}~~|2.4<br>~~p+}~~|2.9<br>~~—~~|mΩ<br>|
||||TJ=100°C<br>~~p+}~~<br>~~a~~<br>|-<br>~~p+}~~<br>~~ee~~<br>|3.3<br>~~p+}~~<br>~~ee~~<br>|-<br>~~—~~<br>~~ee~~<br>||
|||VGS=4.5V, IDS=20A<br>~~/~~<br>~~p+}~~<br>~~ee~~<br>||-<br>~~p+}~~<br>~~ee~~<br>~~ee~~<br>|3.1<br>~~p+} ~~<br>~~ee~~<br>~~ee~~<br>|4<br> ~~—~~<br>~~ee~~<br>~~ee~~<br>||
|Gfs<br>~~Pe~~|Forward Transconductance<br>|VDS=5V, IDS=20A<br>||-<br>~~ee~~<br>|50<br>~~ee~~<br>|-<br>~~ee~~<br>|S<br>|
|**Diode Characteristics**<br>~~ee ee~~<br>~~PeCe~~||||||||
|VSD<br>e<br>~~ee~~|Diode Forward Voltage<br>~~ee~~|ISD=20A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8<br>~~ee~~|1.1<br>~~ee~~|V<br>~~ee~~|
|trr<br>~~a~~<br>~~a~~|Reverse Recovery Time|ISD=5A, dlSD/dt=100A/µs<br>Vdd=20V<br>~~**|**~~||-<br>~~fT~~<br>~~**|**~~|38<br>~~fT~~|-<br>~~fT~~|ns|
|ta<br>~~a~~|Charge Time|||-<br>~~**|**~~|21|-||
|tb<br>~~a~~<br>~~a~~|Discharge Time|||-<br>~~**|**~~<br>~~oT~~|17<br>~~oT~~|-<br>~~oT~~||
|Qrr<br>~~a~~|Reverse Recovery Charge|||-<br>~~ot~~|35<br>~~ot~~|-<br>~~ot~~|nC<br>~~ot~~|
|**Dynamic Characteristics**<br>~~|~~||||||||
|RG<br>~~|~~<br>~~eG~~<br>~~a~~|Gate Resistance<br>~~|~~<br>~~eG~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~|~~<br>~~eG~~<br>~~ee~~||-<br>~~|~~<br>~~eG~~<br>~~P|~~|0.88<br>~~|~~<br>~~eG~~<br>~~P|~~|-<br>~~|~~<br>~~eG~~<br>~~P|~~|Ω<br>~~|~~<br>~~eG~~|
|Ciss<br>~~eG~~<br>~~a~~|Input Capacitance<br>~~eG~~<br>~~ee~~|VGS=0V,<br>VDS=20V,<br>Frequency=1.0MHz<br>~~eG~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~eG~~<br>~~P|~~|2650<br>~~eG~~<br>~~P|~~|-<br>~~eG~~<br>~~P|~~|pF<br>~~eG~~|
|Coss<br>~~a~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~fT~~<br>~~P|~~|750<br>~~P|~~<br>~~fT~~<br>~~P|~~|-<br>~~P|~~<br>~~fT~~<br>~~P|~~||
|Crss<br>~~ee~~<br>~~re~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~P|~~|88<br>~~P|~~<br>~~P|~~|-<br>~~P|~~<br>~~P|~~||
|td(ON)<br>~~ee~~<br>~~re~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=20V, RL=20Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~||-<br>~~P|~~<br>~~P|~~<br>~~|~~|17<br>~~P|~~<br>~~P|~~<br>|-<br>~~P|~~<br>~~P|~~<br>|ns|
|tr<br>~~re~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~||~~|11.5<br>~~P|~~<br>~~|~~|-<br>~~P|~~<br>~~|~~||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~||~~<br>~~P|~~<br>~~pt~~|36<br>~~|~~<br>~~P|~~<br>~~pt~~|-<br>~~|~~<br>~~P|~~<br>~~pt~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~|~~<br>~~P|~~<br>~~pt~~|31<br>~~|~~<br>~~P|~~<br>~~pt~~|-<br>~~|~~<br>~~P|~~<br>~~pt~~||
|**Gate Charge Characteristics**<br>~~P|~~<br>~~ee~~<br>~~ee~~<br>~~pt~~||||||||
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=20V, VGS=10V,<br>IDS=25A<br>~~ee~~||-<br>~~pL~~|39<br>~~pL~~|50<br>~~pL~~|nC|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=20V, VGS=4.5V,<br>IDS=25A<br>~~ee~~<br>~~ee~~||-<br>~~pL~~<br>~~po~~|17<br>~~pL~~<br>~~po~~|~~pL~~<br>~~po~~||
|Qgth<br>~~ee~~<br>~~ee~~<br>~~a~~|Threshold Gate Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~pL~~<br>~~po~~<br>~~a~~|3.5<br>~~pL~~<br>~~po~~<br>~~a~~|-<br>~~pL~~<br>~~po~~<br>~~a~~||
|Qgs<br>~~ee~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~po~~<br>~~a~~<br>~~pL~~|7<br>~~po~~<br>~~a~~<br>~~pL~~|-<br>~~po~~<br>~~a~~<br>~~pL~~||
|Qgd<br>~~a~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~a~~<br>~~pL~~|5.3<br>~~a~~<br>~~pL~~|-<br>~~a~~<br>~~pL~~||



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**SM403 3NHU** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>TC=25oC TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>600 3<br>1 Duty = 0.5<br>100 µ s<br>100 i eo 0.2<br>0.1<br>0.1<br>2 —— 0.05 fF<br>1ms<br>0.02<br>10<br>0.01<br>0.01<br>10ms<br>1<br>1E-3<br>DC<br>0.1 TC=25oC 1E-4 Single Pulse R θ JC :1.5oC/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**SM403 3NHU ®** 

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SM403 3NHU ®<br>Typical Operating Characteristics ( Cont.)<br>Safe Operation Area Thermal Transient Impedance<br>300 2<br>1 Duty = 0.5<br>100<br>0.2<br>0.1<br>0.05<br>0.1<br>10 300 µ s<br>0.02<br>0.01<br>1ms<br>1 0.01<br>10ms Single Pulse<br>10s 100ms Mounted on 1in 2  pad<br>0.1 TA=25OC DC 1s 1E-3 R θ JA :55oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100 1000<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Output Characteristics Drain-Source On Resistance<br>180 6<br>V GS =4,4.5,5,6,7,8,9,10V<br>150 5<br>3.5V<br>120 4<br>V =4.5V<br>GS<br>90 3<br>[7] V =10V<br>GS<br>60 2<br>3V<br>30 1<br>2.5V<br>0 0 =<br>0 1 2 3 4 5 0 30 60 90 120 150 180<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics ( Cont.)** 

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## **Typical Operating Characteristics ( Cont.)** 

**Gate-Source On Resistance** 

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14<br>I =25A<br>DS<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>Drain-Source On Resistance<br>2.5<br>V  = 10V<br>GS<br> I  = 25A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 =e RON@Tj=25oC: 2.4m Ω<br>-50 -25 0 25 50 75 100 125 150 175<br>  Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**Gate Threshold Voltage** 

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1.6<br>I DS  =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>-50 -25 0 25 50 75 100 125 150 175<br>Tj - Junction Temperature (°C)<br>[=]<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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Source-Drain Diode Forward<br>100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


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SM403 3NHU ®<br>Typical Operating Characteristics ( Cont.)<br>Capacitance Gate Charge<br>3500 10<br>Frequency=1MHzquency=1MHzuency=1MHzy=1MHz=1MHz V = 20V<br>9 DS<br> I = 25A<br>3000 DS<br>8<br>Ciss<br>2500 7<br>6<br>2000<br>5<br>1500<br>4<br>3<br>1000<br>Coss<br>2<br>500 Crss<br>1<br>0 0 :<br>0 8 16 24 32 40 0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)DS - Drain-Source Voltage (V) - Drain-Source Voltage (V) QG - Gate Charge (nC)<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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3500<br>Frequency=1MHzquency=1MHzuency=1MHzy=1MHz=1MHz<br>3000<br>Ciss<br>2500<br>2000<br>1500<br>1000<br>Coss<br>500 Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)DS - Drain-Source Voltage (V) - Drain-Source Voltage (V)<br>Transfer Characteristics<br>150<br>120<br>90<br>60<br>o<br>T =125 C o<br>j T =25 C<br>j<br>30<br>0 :<br>0 1 2 3 4 5 6<br>VGS - Gate-Source Voltage (V)<br>C - Capacitance (pF)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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**®** sinopower MA 

**SM403 3NHU** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**SM403 3NHU** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - June, 2015 

## **SM403 3NHU** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Package I nform at ion** 

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E A<br>b3 c2 E1<br>c<br>b e<br>IL | Nat SEE VIEW A Tf<br>GAUGE PLANE SEATING PLANE<br>L<br>VIEW A<br>L3<br>D1<br>D<br>H<br>L4<br>0.25 A1<br>0<br>**----- End of picture text -----**<br>


**SYM MILLIMETERS TO-252-2 INCHES RECOMMENDED LAND PATTERN** ~~——~~ **BOL MIN. MAX. MIN. MAX.** 6.25 MIN. A 2.18 2.39 0.086 0.094 A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 ~~———_—_—~~ b3 4.95 5.46 0.195 0.215 ~~.~~ 6.8 MIN. c 0.46 ~~ee~~ 0.61 0.018 ~~es~~ 0.024 g “ye / c2 0.46 0.89 0.018 0.035 D 5.33 6.22 0.210 0.245 6.6 D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 ~~———_——-a~~ E1 3.81 6.00 0.150 0.236 3 MIN. e 2.29 BSC 0.090 BSC ~~ee~~ H 9.40 10.41 0.370 0.410 ~~Wy~~ 2.286 ~~7 ,~~ L 0.90 1.78 0.035 0.070 1.5 MIN. L3 0.89 2.03 0.035 0.080 ~~===~~ L4 - 1.02 - 0.040 ~~a~~ 4.572 ~~——— 0~~ 0° 8° 0° 8° UNIT: mm Note : Follow JEDEC TO-252 . 

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RECOMMENDED LAND PATTERN<br>**----- End of picture text -----**<br>


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sinopower WR. **®** 

**SM403 3NHU** 

## **Carrier Tape & Reel Dim ensions** 

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4 f OD0 od P0 P2 je P1 6 |e A )<br>K0 ee B A0  scinan OD1 B A<br>SECTION A-A<br>Lar SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-2**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - June, 2015 

sinopower **®** YX 

**SM403 3NHU** 

## **Taping Direction I nform at ion** 

**TO-252-2** 

USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - June, 2015 

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**SM403 3NHU** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=—=SS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~—~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5635080 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.1 - June, 2015 

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Updated at February 12, 2024
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