SM4023NSKP

SM4023NSKP, Single MOSFET, N Channel, 40V, DFN5x6A-8_EP1

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 40
Package: View
VGS (±V): 20
VTH(V) typ.: 1.8
ID (A) TA=25: 25
ID (A) TC=25: 100
Rg (Ω) max.: 2
Rg (Ω) typ.: 1.1
Ciss (pF) typ.: 4350
Coss (pF) typ.: 690
Crss (pF) typ.: 370
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 2.4
RON(mΩ max) 4.5V max.: 3.3
Delivery and price
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Current stock	10+
Lead time	30 days
Datasheet
## **SM4023NSKP** 

**®** N-Channel Enhancement Mode MOSFET **Features Pin Description** • 40V/100A,[D][D] D[D] RDS(ON)= 2.4mΩ (max.) @ VGS=10V RDS(ON)= 3.3mΩ (max.) @ VGS=4.5V **•** Reliable and Rugged S[S][S][G] Pin 1 **•** Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) (5,6,7,8) D D D D **Applications** (4) G • SMPS Synchronous Rectification • DC-DC Conversion • Or-ing S S S ( 1, 2, 3 ) N-Channel MOSFET **Ordering and Marking Information** SM4023NS Package Code KP : DFN5x6-8 Operating Junction Temperature Range Assembly Material C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel (2500ea/reel) Package Code Assembly Material ~~o~~ G : Halogen and Lead Free Device ~~[:]~~ SM4023NS  KP : SM4023 XXXXX - Lot Code XXXXX ~~i~~ ~~**t**~~ Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**SM4023NSKP** 

## **®** sinopower WN 

## **Absolute Maximum Ratings** 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**|
|---|---|---|---|---|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)<br>~~a————~~|||||
|VDSS<br>~~————~~|Drain-Source Voltage<br>~~————~~||40<br>~~————~~|V<br>~~Cnn~~|
|VGSS<br>~~————~~<br>~~aCnn~~|Gate-Source Voltage<br>~~————~~<br>~~Cnn~~||±20<br>~~————~~<br>~~Cnn~~||
|TJ<br>~~————~~<br>~~Cnn~~|Maximum Junction Temperature<br>~~————~~<br>~~Cnn~~||150<br>~~————~~<br>~~Cnn~~|°C<br>~~Cnn~~|
|TSTG<br>~~Cnn~~<br>~~a~~|Storage Temperature Range<br>~~Cnn~~||-55 to 150<br>~~Cnn~~||
|IS<br>~~Cnn~~<br>~~a~~|Diode Continuous Forward Current<br>~~Cnn~~<br>|TC=25°C<br>~~Cnn~~<br>|100<br>a<br>~~Cnn~~<br>|A<br>~~Cnn~~|
|ID<br>~~aEE~~|Continuous Drain Current<br>~~EE~~|TC=25°C<br>~~EE~~|100<br>a<br>~~EE~~||
|||TC=100°C<br>~~EE~~<br>~~rr~~|100<br>a<br>~~EE~~<br>~~rr~~||
|IDM<br>~~a ~~|Pulsed Drain Current<br> ~~a~~|TC=25°C|400<br>b||
|PD<br>~~Ee~~|Maximum Power Dissipation<br>~~Ee~~|TC=25°C<br>~~Ee~~|104<br>~~Ee~~|W<br>~~Ee~~|
|||TC=100°C<br>~~Ee~~<br>~~a~~|41<br>~~Ee~~<br>~~a~~||
|RθJC<br>~~aee~~|Thermal Resistance-Junction to Case<br>~~ee cee~~|Steady State<br>~~cee~~|1.2<br>~~cee~~|°C/W<br>~~cee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee cee~~|TA=25°C<br>~~cee~~|25<br>~~cee~~|A<br>~~cee~~|
|||TA=70°C<br>~~cee~~<br>~~rr~~|20<br>~~cee~~<br>~~rr~~||
|PD<br>~~ee~~<br>~~ee~~|Maximum Power Dissipation<br>~~ee cee~~<br>~~ee~~|TA=25°C<br>~~cee~~<br>~~ee~~|2.3<br>~~cee~~<br>~~ee~~|W<br>~~cee~~<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~a~~|1.5<br>~~ee~~<br>~~a~~||
|RθJA<br>~~Ee~~|Thermal Resistance-Junction to Ambient<br>~~Ee~~|t≤10s<br>~~Ee~~|17<br>~~Ee~~|°C/W<br>~~Ee~~|
|||Steady State<br>~~Ee~~<br>~~a~~|55<br>~~Ee~~<br>~~a~~||
|IAS<br>c<br>~~a~~|Avalanche Current, Single pulse (L=0.5mH)||31|A|
|EAS<br>c<br>~~a~~|Avalanche Energy, Single pulse (L=0.5mH)||240|mJ|



Note a：Package is limited to 100A. 

Note b：Pulse width limited by max. junction temperature. Note c：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

||~~ee~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~ee~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage|VGS=0V, IDS=250µA||40|-|-|V|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current|VDS=32V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~aGe~~|Gate Threshold Voltage<br>~~Ge~~|VDS=VGS,IDS=250µA<br>~~Ge~~||1.5<br>~~Ge~~|1.8<br>~~Ge~~|2.5<br>~~Ge~~|V<br>~~Ge~~|
|IGSS<br>~~a OG~~|Gate Leakage Current<br>~~OG~~|VGS=±20V, VDS=0V<br>~~OG~~||-<br>~~OG~~|-<br>~~OG~~|±100<br>~~OG~~|nA<br>~~OG~~|
|RDS(ON)<br>d <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=30A<br>TJ=125°C<br>~~ee~~<br>~~| ~~||-<br>~~ee~~|1.85<br>~~ee~~|2.4<br>~~ee~~|mΩ|
||||TJ=125°C<br>~~ee~~<br>~~| ~~|-<br>~~ee~~<br> ~~ff~~<br>~~ee~~|2.8<br>~~ee~~<br>~~ff~~<br>~~ee~~|-<br>~~ee~~<br>~~ff~~||
|||VGS=4.5V, IDS=20A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|2.5<br>~~ee~~<br>~~ee~~|3.3<br>~~ee~~||
|Gfs<br>~~a~~|Forward Transconductance|VDS=5V, IDS=20A||-<br>~~ee ~~|55<br> ~~ee~~|-|S|



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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**®** sinopower WN 

## **SM4023NSKP** 

## **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Electrical Characteristics (Cont.)**<br>~~PR~~|**Electrical Characteristics (Cont.)**|**Electrical Characteristics (Cont.)**(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)|(TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)||
|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|**Diode Characteristics**<br>~~PR~~<br>~~PR~~|||||||
|VSD<br>d<br>~~PRa~~|Diode Forward Voltage<br>~~ee~~|ISD=20A, VGS=0V<br>~~ee~~<br>~~|~~|-<br>~~|~~|0.77<br>|1.1<br>|V|
|trr<br>~~PRa~~<br>~~a~~|Reverse Recovery Time<br>~~ee~~|ISD=20A, VDD=20V<br>dlSD/dt=100A/µs<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~_~~|-<br>~~|tf~~<br>~~|~~|31<br>~~tf~~<br>|-<br>~~tf~~<br>|ns|
|ta<br>~~a~~<br>~~a~~<br>~~a~~|Charge Time<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|ft~~<br>~~|~~<br>~~|~~|18<br><br>~~ft~~<br>~~|~~|-<br><br>~~ft~~<br>~~|~~||
|tb<br>~~a~~<br>~~a~~<br>~~ee~~|Discharge Time<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~_~~<br>~~|~~|13<br><br>~~|~~<br>~~|~~|-<br><br>~~|~~<br>~~|~~||
|Qrr<br>~~a~~<br>~~ee~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~_~~<br>~~|~~|26<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|nC|
|**Dynamic Characteristics**<br>e<br>~~ee~~<br>~~_~~<br>~~|~~<br>~~|~~<br>~~|~~|||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz|0.7<br>~~|~~|1.1<br>~~|~~|2<br>~~|~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~<br>~~rs~~|Input Capacitance|VGS=0V,<br>VDS=20V,<br>Frequency=1.0MHz<br>~~|~~<br>~~ee~~|3450<br>~~|~~<br>~~|~~|4350<br>~~|~~<br>|5220<br>~~|~~<br>|pF|
|Coss<br>~~ee~~<br>~~rs~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~||580<br>~~|~~<br>~~||~~<br>~~sf~~|690<br>~~|~~<br>~~|~~<br>~~sf~~|800<br>~~|~~<br>~~|~~<br>~~sf~~||
|Crss<br>~~rs~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~||300<br>~~||~~<br>~~sf~~|370<br>~~|~~<br>~~sf~~|450<br>~~|~~<br>~~sf~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=20V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=1Ω<br><br>~~ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~|-<br>~~|~~<br>~~sf~~<br>~~|~~<br>~~|~~<br>~~|~~|20<br>~~|~~<br>~~sf~~<br>~~|~~<br>~~|~~|24<br>~~|~~<br>~~sf~~<br>~~|~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~sf~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|10<br>~~sf~~<br>~~|~~|12<br>~~sf~~<br>~~|~~||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ft~~|58<br>~~|~~<br>~~ft~~|69<br>~~|~~<br>~~ft~~||
|tf<br>~~ee ~~<br>~~ee~~|Turn-off Fall Time<br> ~~ee~~||-<br>~~|~~<br>~~|~~<br>~~ft~~|34<br>~~ft~~|40<br>~~ft~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~ft~~<br>~~a~~|||||||
|Qg<br>~~ee~~|Total Gate Charge|VDS=20V, VGS=4.5V,<br>IDS=40A|-<br>~~ff~~|35<br>~~ff~~|42<br>~~ff~~|nC|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge|VDS=20V, VGS=10V,<br>IDS=40A|-<br>~~ff~~<br>~~ff~~|76<br>~~ff~~<br>~~ff~~|91<br>~~ff~~<br>~~ff~~||
|Qgth<br>~~ee~~<br>~~ee~~<br>~~ee~~|Threshold Gate Charge||-<br>~~ff~~<br>~~ff~~<br>~~ee~~|5.2<br>~~ff~~<br>~~ff~~<br>~~ee~~|6.2<br>~~ff~~<br>~~ff~~<br>~~ee~~||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge||-<br>~~ff~~<br>~~ee~~<br>~~st~~|12<br>~~ff~~<br>~~ee~~<br>~~st~~<br>~~ft~~|14.4<br>~~ff~~<br>~~ee~~<br>~~st~~<br>~~ft~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge||-<br>~~ee~~<br>~~st~~|15.5<br>~~ee~~<br>~~st~~<br>~~ft~~|18.6<br>~~ee~~<br>~~st~~<br>~~ft~~||



Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

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## **SM4023NSKP** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

**Drain Current** 

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120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>TC=25oC TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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800 4<br>1 Duty = 0.5<br>100 100µs 0.2<br>0.1<br>0.1<br>0.05<br>1ms 0.02<br>10<br>0.01<br>0.01<br>10ms<br>DC<br>1<br>1E-3<br>Single Pulse<br>0.1 TC=25oC 1E-4 RθJC :1.2 o C/W<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM4023NSKP** 

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## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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150<br>VGS=4,5,6,7,8,9,10V<br>3.5V<br>120<br>90<br>60<br>3V<br>30<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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10<br>I =30A<br>DS<br>8<br>6<br>4<br>2<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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3.5<br>3.0<br>V =4.5V<br>GS<br>2.5<br>2.0 V =10V<br>GS<br>1.5<br>1.0<br>0 20 40 60 80 100 120 140<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM4023NSKP** 

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## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V  = 10V<br>GS<br> I  = 30A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 _ RON@Tj=25oC: 1.85mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>7000<br>Frequency=1MHz<br>6000<br>5000<br>Ciss<br>4000<br>3000<br>2000<br>1000 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 20V<br>9 DS<br> I = 40A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower MA 

**SM4023NSKP** 

## **Typical Operating Characteristics (Cont.)** 

## **Transfer Characteristics** 

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100<br>80<br>60<br>T =125oC<br>40 j<br>20 T =25 o C<br>j<br>0<br>0 1 2 3 4 5<br>VGS - Gate-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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**®** sinopower WA 

**SM4023NSKP** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>oe<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **SM4023NSKP** 

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## **Package Information** 

## **DFN5x6-8** 

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F F1<br>D1<br>H<br>K<br>G1<br>G<br>D<br>e B<br>at<br>E1 E<br>A<br>C<br>**----- End of picture text -----**<br>


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RECOMMENDED LAND PATTERN<br>**----- End of picture text -----**<br>


|**SYM**<br>**BO**<br>**L**||**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**MIN.**<br>**MAX.**<br>**MILLIMETERS**<br>**DFN5x6-8**<br>**MIN.**<br>**MAX.**<br>**INCHES**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**<br>4.6|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|**RECOMMENDED LAND PATTERN**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|A||0.90|||1.20||0.035||0.047||||||||||||||||||||||||||||||||0.77||||||
|B||0.3|||0.51||0.012||0.020||||||||||||||||||||||||||||||||||||||
|C||0.19|||0.25||0.007||0.010||||||||||||||||||||||||||||||||||||||
|D<br>D1||4.80<br>4.00|||5.30<br>4.40||0.189<br>0.157||0.209<br>0.173|0.61|||||||||||||||||||||||||||||||||||||
|E||5.90|||6.20||0.232||0.244||||||||||||||||||||||||||||||||3.6||||||
|E1<br>e<br>F<br>F1||5.50<br>0.05<br>1.27 BSC<br>0.35|1.27 BSC||5.80<br>0.75<br>0.30||0.050 BSC<br>0.217<br>0.228<br>0.002<br>0.014<br>0.030<br>0.012|||1.18 1.16||||||||||||||||||||||||||||||||||6.1|||
|G<br>H<br>G1||3.34<br>0.05<br>0.35|||3.9<br>0.30<br>0.75||0.131<br>0.002<br>0.014||0.154<br>0.012<br>0.030|||||||||||0.5||||||||||||1.27|||||||||0.71||||||
|K||0.762|||-||0.03||-||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||UNIT: mm|||||||
|Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.|||Note : 1.Dimension D, D1,D2 and E1 do not include mold flash or protrusions.||||||||||||||||||||||||||||||||||||||||||
|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.|Mold flash or protrusions shall not exceed 10 mil.||||||||||||||||||||||||||||||||||||||||||||



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

9 

sinopower **®** WA 

**SM4023NSKP** 

## **Carrier Tape & Reel Dimensions** 

**==> picture [315 x 338] intentionally omitted <==**

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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>| Wy <//<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN5x6-8**|330.0±2.00|50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.5±0.10|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.10<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.3±0.05|0.05<br>6.5±0.10|5.3±0.10|1.4±0.10|



10 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

sinopower **®** YX 

**SM4023NSKP** 

## **Taping Direction Information** 

## **DFN5x6-8** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**==> picture [11 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
11<br>**----- End of picture text -----**<br>


_www.sinopowersemi.com_ 

**®** 

## **SM4023NSKP** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, 

Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

12 

_www.sinopowersemi.com_
Updated at February 12, 2024
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