SM3116NSUC

SM3116NSUC, Single MOSFET, N Channel, 30V, TO-251S

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 30
Package: View
VGS (±V): 20
Tube: View
VTH(V) typ.: 1.8
ID (A) TA=25: 16
ID (A) TC=25: 80
Rg (Ω) max.: 5
Rg (Ω) typ.: 2.5
Ciss (pF) typ.: 1790
Coss (pF) typ.: 260
Crss (pF) typ.: 130
Quality Report: View
RON(mΩ max) 10V max.: 5.7
RON(mΩ max) 4.5V max.: 8
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
**SM3116NSUC** 

## N-Channel Enhancement Mode MOSFET 

## **Features** 

## **Pin Description** 

- 30V/80A 

- RDS(ON)=5.7mΩ(max.)@VGS=10V 

- RDS(ON)=8mΩ(max.)@VGS=4.5V 

- 100% UIS + R Tested g 

- Reliable and Rugged 

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TO-251S 

- Lead Free and Green Devices Available 

- (RoHS Compliant) 

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## **Applications** 

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- Power Management in Desktop Computer or 

- DC/DC Converters. 

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N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM3116NS Package Code<br>UC : TO-251S<br>Operating Junction Temperature Range<br>Assembly Material  C : -55 to 150 oC<br>Handling Code  Handling Code<br>Temperature Range  TU : Tube<br>Package Code Assembly Material<br>G : Halogen and Lead Free Device<br>SM3116NS  UC : SM3116N XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

1 

Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

www.sinopowersemi.com 

**SM3116NSUC** 

## **Absolute Maximum Ratings**[(T] A[=25°C Unless Otherwise Noted)] 

|~~es~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~es~~<br>~~Co~~|**Parameter**||**Rating**|**Unit**|
|**Common Ratings**<br>~~es~~<br>~~Co~~<br>~~Ce~~|||||
|VDSS<br>~~Co~~<br>~~Ce~~|Drain-Source Voltage<br>||30<br>|V<br>~~i~~|
|VGSS<br>~~Cei~~|Gate-Source Voltage<br>~~i~~||±20<br>~~i~~||
|TJ<br>~~Ce~~<br>~~**a**~~|Maximum Junction Temperature<br><br>~~**a**~~||150<br><br>~~**a**~~|°C<br><br>~~**a**~~|
|TSTG<br>~~**a**~~<br>~~es~~|Storage Temperature Range<br>~~**a**~~<br>~~ee~~||-55 to 150<br>~~**a**~~||
|IS<br>~~**a**~~<br>~~es~~|Diode Continuous Forward Current<br>~~**a**~~<br>~~ee~~|TC=25°C<br>~~**a**~~|28<br>~~**a**~~|A<br>~~**a**~~|
|ID<br>~~es~~<br>~~ee~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~ee eee~~<br>|80<br>a<br>~~ee~~<br>~~eee~~<br>|A|
|||TC=100°C<br>~~ee~~<br>~~ee eee~~<br>|51<br>~~ee~~<br>~~eee~~<br>||
|IDM<br>b<br>~~a eG~~|Pulsed Drain Current<br>~~eG~~|TC=25°C<br>~~ee eee~~<br>~~eG~~|320<br>~~eee~~<br>~~eG~~||
|PD<br>~~ep~~|Maximum Power Dissipation<br>~~ep~~|TC=25°C<br>~~ep~~|63<br>~~ep~~|W<br>~~ep~~|
|||TC=100°C<br>~~ep~~<br>~~ee~~|25<br>~~ep~~<br>~~ee~~||
|RqJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee~~|Steady state<br>~~e~~|2<br>~~e~~|°C/W<br>~~e~~|
|ID<br>~~a~~<br>~~ee~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~<br>|TA=25°C<br>~~e~~<br>~~ee~~<br>~~ee eee~~<br>|16<br>~~e~~<br>~~ee~~<br>~~eee~~<br>|A<br>~~e~~|
|||TA=70°C<br>~~ee~~<br>~~ee eee~~<br>|13<br>~~ee~~<br>~~eee~~<br>||
|IDM<br>b<br>~~a eG~~|Pulsed Drain Current<br>~~eG~~|TA=25°C<br>~~ee eee~~<br>~~eG~~|65<br>~~eee~~<br>~~eG~~||
|PD<br>~~el~~<br>~~ee~~|Maximum Power Dissipation<br>~~el~~|TA=25°C<br>~~el~~|2.5<br>~~el~~|W<br>~~el~~<br>~~|~~|
|||TA=70°C<br>~~el~~<br>~~ee~~|1.6<br>~~el~~<br>~~ee~~||
|RqJA<br>~~ee~~<br>~~a~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>|t ≤ 10s<br>~~ee~~<br>~~ee~~<br>|20<br>~~ee~~<br>~~ee~~<br>|°C/W<br>~~|~~<br>|
|||Steady state<br>~~ee~~<br>~~ee~~<br><br>~~rs~~|50<br>~~ee~~<br>~~ee~~<br>||
|IAS<br>c<br>~~ee~~<br>~~a es~~<br>~~a~~|Avalanche Current, Single pulse<br>~~es~~|L=0.5mH<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~rs~~|18<br>~~ee~~<br>~~ee~~<br>~~es~~|A<br>~~|~~<br>~~es~~|
|EAS<br>c<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH<br>~~rs~~|81|mJ|



Note a ： Max. continuous current is limited by bonding wire. Note b ： Pulse width is limited by max. junction temperature. Note c ： UIS tested and pulse width limited by maximum junction temperature (initial temperature Tj=25oC). 

Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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2 

**SM3116NSUC** 

**Electrical Characteristics**[ (T] A[= 25°C unless otherwise noted)] 

|**Symbol**<br>~~Ge~~|**Parameter**<br>~~Ge~~|**Test Conditions**<br>~~Ge~~|**Test Conditions**<br>~~Ge~~|**Min.**<br>~~Ge~~|**Typ.**<br>~~Ge~~|**Max.**<br>~~Ge~~|**Unit**<br>~~Ge~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ge~~<br>~~pn~~||||||||
|BVDSS<br>~~pn~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~pn~~<br>~~e~~|VGS=0V, IDS=250mA<br>~~pn~~<br>~~ee~~||30<br>~~pn~~<br>~~e~~|-<br>~~pn~~<br>~~e~~|-<br>~~pn~~<br>~~e~~|V<br>~~pn~~<br>~~e~~|
|IDSS<br>~~a~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~e~~<br>~~a~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~<br>~~|~~||-<br>~~e~~<br>~~a~~<br>~~|~~|-<br>~~e~~<br>~~a~~<br>~~||~~|1<br>~~e~~<br>~~a~~<br>~~|~~|mA<br>~~e~~<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~||~~|30<br>~~a~~<br>~~|~~<br>~~|~~||
|VGS(th)<br>~~GC~~|Gate Threshold Voltage<br>~~GC~~|VDS=VGS, IDS=250mA<br>~~GC~~||1.5<br>~~|~~<br>~~GC~~|1.8<br>~~| |~~<br>~~GC~~|2.5<br>~~|~~<br>~~GC~~|V<br>~~GC~~|
|IGSS<br>~~GC~~<br>~~G~~|Gate Leakage Current<br>~~GC~~<br>~~G~~|VGS=±20V, VDS=0V<br>~~GC~~<br>~~Ge~~||-<br>~~GC~~<br>~~e~~|-<br>~~GC~~<br>~~e~~|±100<br>~~GC~~<br>~~e~~|nA<br>~~GC~~<br>~~e~~|
|RDS(ON)<br>d<br>~~G~~<br>~~a~~|Drain-Source On-state Resistance<br>~~G~~<br>|VGS=10V, IDS=25A<br>TJ=125°C<br>~~Ge~~<br>~~Ss~~<br>~~|~~<br>||-<br>~~e~~<br>~~Ss~~|4.7<br>~~e~~<br>~~Ss~~|5.7<br>~~e~~<br>~~Ss~~|mW<br>~~e~~<br>|
||||TJ=125°C<br>~~Ss~~<br>~~|~~<br>|-<br>~~Ss~~<br>~~ff~~<br>~~ee~~<br>|7.3<br>~~Ss~~<br>~~ff~~<br>~~ee~~<br>|-<br>~~Ss~~<br>~~ff~~<br>~~ee~~<br>||
|||VGS=4.5V, IDS=20A<br>~~ee~~<br>||-<br>~~ee~~<br>~~ee~~<br>|6<br>~~ee~~<br>~~ee~~<br>|8<br>~~ee~~<br>~~ee~~<br>||
|Gfs<br>~~a ss~~|Forward Transconductance<br>~~ss~~|VDS=5V, IDS=25A<br>~~ss~~||-<br>~~ee ~~<br>~~ss~~|29<br> ~~ee ~~<br>~~ss~~|-<br> ~~ee~~<br>~~ss~~|S<br>~~ss~~|
|**Diode Characteristics**<br>~~|~~||||||||
|VSD<br>d<br>~~Ge~~<br>~~ee~~<br>~~a~~|Diode Forward Voltage<br>~~Ge~~<br>~~ee~~|ISD=20A, VGS=0V<br>~~Ge~~||-<br>~~Ge~~<br>~~|~~|0.8<br>~~Ge~~<br>~~|~~<br>~~|~~|1.1<br>~~Ge~~<br>~~|~~<br>~~|~~|V<br>~~Ge~~|
|trr<br>~~Ge~~<br>~~ee~~<br>~~a~~<br>~~es~~|Reverse Recovery Time<br>~~Ge~~<br>~~ee~~<br>~~ee~~|ISD=25A, dlSD/dt=100A/ms<br>~~Ge~~<br>~~|~~<br>~~|~~||-<br>~~Ge~~<br>~~|~~<br>~~||~~|18<br>~~Ge~~<br>~~|~~<br>~~|~~|-<br>~~Ge~~<br>~~|~~<br>~~|~~|ns<br>~~Ge~~<br>~~a~~|
|ta<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~es~~|Charge Time<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|||-<br>~~|~~<br>~~||~~<br>~~||~~|11<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|tb<br>~~es~~<br>~~es~~|Discharge Time<br>~~ee~~<br>~~**ee**~~|||-<br>~~||~~<br>~~||~~<br>~~a~~|7<br>~~a~~|-<br>~~a~~||
|Qrr<br>~~es~~<br>~~es~~|Reverse Recovery Charge<br>~~ee~~<br>~~**ee**~~|||-<br>~~| |~~<br>~~||~~<br>~~a~~|7<br>~~a~~|-<br>~~a~~|nC<br>~~a~~|
|**Dynamic Characteristics**<br>e<br>~~**ee**~~<br>~~| |~~<br>~~es~~<br>~~a~~<br>~~|~~||||||||
|RG<br>~~Ge~~<br>~~ee~~<br>~~a~~|Gate Resistance<br>~~Ge~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~Ge~~||-<br>~~Ge~~<br>~~|~~|2.5<br>~~Ge~~<br>~~|~~<br>~~|~~|5<br>~~Ge~~<br>~~|~~<br>~~|~~|W<br>~~Ge~~|
|Ciss<br>~~ee~~<br>~~a~~<br>~~es~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~|~~<br>~~|~~<br>~~**|**~~||-<br>~~|~~<br>~~||~~|1790<br>~~|~~<br>~~|~~|2327<br>~~|~~<br>~~|~~|pF|
|Coss<br>~~ee~~<br>~~a~~<br>~~es~~<br>~~rs~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~||~~<br>~~||~~|260<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|Crss<br>~~es~~<br>~~rs~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|||-<br>~~||~~<br>~~||~~<br>~~**|**|~~|130<br>~~|~~|-<br>~~|~~||
|td(ON)<br>~~es~~<br>~~rs~~<br>~~ee~~<br>~~es~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|VDD=15V, RL=15W,<br>IDS=1A, VGEN=4.5V,<br>RG=6W<br>~~|~~<br>~~|~~<br>~~**|**~~<br>~~**_**~~<br>||-<br>~~| |~~<br>~~||~~<br>~~**|**|~~|15<br>~~|~~<br>~~|~~|27<br>~~|~~<br>~~|~~|ns<br>|
|tr<br>~~rs~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~**ee**~~<br>~~**ee**~~<br>|||-<br>~~| |~~<br>~~**|**|~~<br>~~**_|**~~<br>|10<br>~~|~~<br>~~|~~<br>~~**|**~~<br>|18<br>~~|~~<br>~~|~~<br>||
|td(OFF)<br>~~ee~~<br>~~es~~<br>~~ee~~|Turn-off Delay Time<br>~~**ee**~~<br>~~**ee**~~<br>|||-<br>~~**|** |~~<br>~~**_|**~~<br>|44<br>~~|~~<br>~~|~~<br>~~**|**~~<br>|80<br>~~|~~<br>~~|~~<br>||
|tf<br>~~es~~<br>~~ee~~|Turn-off Fall Time<br>~~**ee**~~<br>|||-<br>~~**_|**~~<br>|12<br>~~|~~<br>~~**|**~~<br>|22<br>~~|~~<br>||
|**Gate Charge Characteristics**<br>e<br>~~**ee**~~<br>~~**_** ~~~~**|**~~<br>~~**|**~~<br>~~eepe~~||||||||
|Qg<br>~~pe~~<br>~~ee~~|Total Gate Charge<br>~~pe~~|VDS=15V, VGS=10V,<br>IDS=25A<br>~~pe~~<br>~~_~~||-<br>~~pe~~<br>~~_~~<br>~~|~~|31<br>~~pe~~<br>~~|~~|43.4<br>~~pe~~|nC<br>~~pe~~|
|Qg<br>~~ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~|VDS=15V, VGS=4.5V,<br>IDS=25A<br>~~_~~<br>~~|~~<br>~~|~~<br>~~_~~||-<br>~~_~~<br>~~|~~<br>~~|~~<br>~~|~~|14<br>~~|~~|-||
|Qgth<br>~~ee~~<br>~~es~~<br>~~es~~|Threshold Gate Charge<br>~~ee~~<br>~~ee~~|||-<br>~~_~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|3<br>~~|~~|-||
|Qgs<br>~~es~~<br>~~es~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~_~~<br>~~|~~|5.5<br>~~|~~|-||
|Qgd<br>~~es~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~_~~<br>~~|~~|5<br>~~|~~|-||



Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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3 

**SM3116NSUC** 

## **Typical Operating Characteristics** 

## **Power Dissipation** 

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70<br>60 poSERN CELE<br>50 FCONLELEL<br>HN<br>40<br>CHEEEPRCELEEEEEE<br>30 PETEHENENE EEE EEE<br>FEEEECCCENC [LEE]<br>20 PCE NCL<br>10 PETEHEEET EEE EN ELE<br>EEN EL<br>T =25 o C<br>C<br>0 SAsSUERREREE\GEPOCORN<br>0 20 40 60 80 100 120 140 160<br> - Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


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Tj - Junction Temperature (°C)<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

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tA ANN NHN 4 ia<br>==<br>aii maiiiia ei<br>Se Saal<br>SEN om<br>Eeoe<br>Sewell ULE CEL<br>0.1 1 10<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


## **Drain Current** 

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90<br>80<br>SOE<br>70<br>CECE EET<br>60 SaSna0 SEaEREEE5<br>50 EEE<br>FEEEEEE<br>40 PEPE N EE<br>FECEEECECEENI |<br>30<br>FEE EEELEAN<br>20 PECCETPPTery ey<br>10 HEE ECE<br>T C =25 o C,V G =10V<br>0 PoSEREEEYHTT<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


## **Thermal Transient Impedance** 

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3<br>1 Duty = 0.5<br>SSS SSSarene. 0.2 eee<br>0.1<br>|  tee a<br>ee ge<br>0.1 | 0.05 Yj<br>0.02<br>0.01<br>0.01<br>a /(<br>1E-3 acti err aaa eat<br>a a<br>Single Pulse<br>Fit Hee o<br>1E-4 ae RqJC : 2 C/W<br>a<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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4 

**SM3116NSUC** 

## **Typical Operating Characteristics(Cont.)** 

**Safe Operation Area** 

## **Thermal Transient Impedance** 

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 - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


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VDS - Drain - Source Voltage (V)<br>**----- End of picture text -----**<br>


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2<br>1 Duty = 0.5<br>0<br>0.2<br>0.1<br>seine gia<br>0.05<br>0.1<br>Leal 0.02 | II Tl<br>Be eee<br>0.01<br>| Sa<br>0.01<br>Single Pulse<br>7 Mounted on 1in 2  pad<br>1E-3 RqJA :50oC/W<br>1E-4 MM 1E-3 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


## **Output Characteristics** 

## **Drain-Source On Resistance** 

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200<br>V GS =5,6,7,8,9,10V<br>160 a” Wf /Za 4.5V ——<br>an / (Zane—_<br>120 4V<br>YY —<br>80<br>| Yon 3.5V<br>aa :<br>40<br>3V<br>}-—<br>aun<br>2.5V<br>0 [-—_—_—<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


**VDS - Drain - Source Voltage (V)** 

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9<br>8<br>PEE<br>7<br>V =4.5V C<br>GS<br>6<br>SEeee<br>5 VGS=10V<br>Pe<br>4 PEPEoan _<br>3<br>rrr rr<br>BERR<br>2 ptPittT tTEtt| TE |PyTt |<br>0 20 40 60 80 100<br>ID - Drain Current (A)<br> - On - Resistance (mΩ)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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5 

**SM3116NSUC** 

## **Typical Operating Characteristics(Cont.)** 

## **Gate-Source On Resistance** 

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28<br>I =25A<br>DS<br>24 On|SSSRRRRRERees<br>ofc<br>20<br>fcsoes<br>16<br>12<br>CECE<br>COA<br>8<br>cc<br>4<br>COPE<br>0 PCEECEth<br>2 3 4 5 6 7 8 9 10<br> - On - Resistance (mΩ)<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Gate Threshold Voltage** 

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1.6<br>I DS =250mA<br>1.4 oo<br>Seer<br>1.2<br>ons<br>1.0<br>0.8<br>CEEEEECEPSSETH<br>SN<br>0.6<br>0.4<br>SEE<br>0.2 PEEEEEEEEEEELEE<br>-50 -25 0 25 50 75 100 125 150<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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VGS - Gate - Source Voltage (V)<br>**----- End of picture text -----**<br>


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Tj - Junction Temperature (°C)<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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2.5 200<br>V  = 10V<br>GS<br>100<br> I  = 25A<br>DS<br>2.0 oo<br>SUIAAAEREREEED BEECH ACHE<br>1.5 10 Tj=150 o C<br>MIASIARERAADD nnAag (FANE<br>1.0 ae | SESS T=25 o C SE SE<br>BP j<br>a 1 PEEPEEE<br>0.5<br>ee<br>0.0 LLL RON@Tj=25oC: 4.7mW 0.1 PELL [ELIE]<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>S<br>I<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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6 

**SM3116NSUC** 

## **Typical Operating Characteristics(Cont.)** 

## **Capacitance** 

## **Gate Charge** 

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2400 10<br>se Frequency=1MHz V = 15V Coo)<br>9 DS<br>2100  I = 25A<br>DS<br>Se 8 S [aEEEEEEE]<br>1800 Ciss<br>See SA<br>7<br>1500 CoP) POPP<br>a 6 6 EEREEE<br>1200 SR 5 AEE AHH]<br>COC ECE eee PPESeoPPP erveeeee<br>4<br>900<br>ee EEEEE AREER<br>OCC eee =<br>3<br>600<br>NOLELELEL LLL 2 COPE<br>ROEE EEE<br>300 Coss<br>1<br>ASB ACEC EEC<br>Crss<br>0 ee 0 PEC<br>0 5 10 15 20 25 30 0 4 8 12 16 20 24 28 32<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


## **Transfer Characteristics** 

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150<br>eee eee<br>125 eee Ae<br>ee eee<br>100 Bae sees<br>See ieee<br>75<br>T=125oC<br>50 j<br>T=25oC<br>25 j<br>0 LZ]<br>1 2 3 4 5 6<br>VGS - Gate-Source Voltage (V)<br> - Drain Current (A)<br>D<br>I<br>**----- End of picture text -----**<br>


Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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**SM3116NSUC** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L VDSX(SUS)<br>tp<br>DUT VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01 W<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>VDS<br>DUT 90%<br>VGS<br>RG<br>¢ VDD<br>10%<br>tp VGS<br>58 t NX. d(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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**SM3116NSUC** 

## **Disclaimer** 

Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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**SM3116NSUC** 

## **Classification Profile** 

Copyright © Sinopower Semiconductor Inc. Rev. A.5 - December, 2019 

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**SM3116NSUC** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature (Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>** Tolerance for time atpeakprofile temperature(tp)is defined as a supplier minimum and a user maximum.|||



## **Reliability Test Program** 

|**Test item**|**Method**|**Description**|
|---|---|---|
|SOLDERABILITY|JESD-22,B102|5 Sec,245°C|
|HTRB|JESD-22,A108|1000 Hrs,80% of VDS max@Tjmax|
|HTGB|JESD-22,A108|1000 Hrs,100% of VGS max@Tjmax|
|PCT|JESD-22,A102|168 Hrs,100%RH,2atm,121°C|
|TCT|JESD-22,A104|500 Cycles,-65°C~150°C|



## **Customer Service** 

## **Sinopower Semiconductor Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5635080 

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Updated at February 12, 2024
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