SM3106NSU

SM3106NSU, Single MOSFET, N Channel, 30V, TO-252-2

⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 30
Package: View
VGS (±V): 20
VTH(V) typ.: 1.8
ID (A) TC=25: 83
Rg (Ω) typ.: 2
Ciss (pF) typ.: 2500
Coss (pF) typ.: 460
Crss (pF) typ.: 350
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 4.8
RON(mΩ max) 4.5V max.: 7.5
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
# **SM3106NSU ®** 

- N-Channel Enhancement Mode MOSFET 

- **Features Pin Description •** 30V/83A, D RDS(ON)= 4.8mΩ (max.) @ VGS=10V S RDS(ON)= 7.5mΩ (max.) @ VGS=4.5V G 

- **•** Reliable and Rugged **•** Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D 

- 100% UIS Tested 

## **Applications** 

- Power Management in Desktop Computer or DC/DC Converters. 

- UPS/Inverter Application. 

- Battery Package Charger and Discharger Switch. 

**==> picture [88 x 82] intentionally omitted <==**

**----- Start of picture text -----**<br>
G<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

**==> picture [470 x 197] intentionally omitted <==**

**----- Start of picture text -----**<br>
SM3106NS Package Code<br>     U : TO-252-3<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range      TR : Tape & Reel (2500ea/reel)<br>Assembly Material<br>Package Code      G : Halogen and Lead Free Device<br>SM3106NS    U : SM3106N XXXXX - Lot Code<br>Ee XXXXX |<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

1 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

**®** sinopower WN 

**SM3106NSU** 

## **Absolute Maximum Ratings** 

|**Symbol**<br>**Parameter**<br>**Rating**<br>**Unit**<br>**Common Ratings**(TA=25°C Unless Otherwise Noted)<br>VDSS<br>Drain-Source Voltage<br>30<br>VGSS<br>Gate-Source Voltage<br>±20<br>V<br>TJ<br>Maximum Junction Temperature<br>150<br>°C<br>TSTG<br>Storage Temperature Range<br>-55 to 150<br>°C<br>IS<br>Diode Continuous Forward Current<br>20<br>A<br>IDP<br>300μs Pulse Drain Current Tested<br>TC=25°C<br>150<br>A<br>TC=25°C<br>83<br>ID<br>Continuous Drain Current<br>TC=100°C<br>52<br>A<br>~~aes~~<br>~~ae~~<br>~~a De~~<br>~~a~~<br>~~a~~<br>~~aa~~<br>~~a~~<br>~~i~~<br>~~ee~~|**Symbol**<br>**Parameter**<br>**Rating**<br>**Unit**<br>**Common Ratings**(TA=25°C Unless Otherwise Noted)<br>VDSS<br>Drain-Source Voltage<br>30<br>VGSS<br>Gate-Source Voltage<br>±20<br>V<br>TJ<br>Maximum Junction Temperature<br>150<br>°C<br>TSTG<br>Storage Temperature Range<br>-55 to 150<br>°C<br>IS<br>Diode Continuous Forward Current<br>20<br>A<br>IDP<br>300μs Pulse Drain Current Tested<br>TC=25°C<br>150<br>A<br>TC=25°C<br>83<br>ID<br>Continuous Drain Current<br>TC=100°C<br>52<br>A<br>~~aes~~<br>~~ae~~<br>~~a De~~<br>~~a~~<br>~~a~~<br>~~aa~~<br>~~a~~<br>~~i~~<br>~~ee~~||
|---|---|---|
|TC=25°C<br>50<br>PD<br>Maximum Power Dissipation<br>TC=100°C<br>20<br>W<br>~~ep~~<br>~~=~~<br>~~ee~~|||
|RθJC<br>Thermal Resistance-Junction to Case<br>2.5<br>°C/W<br>RθJA<br>Thermal Resistance-Junction to Ambient<br>50<br>°C/W<br>EAS<br>Avalanche Energy, Single Pulsed<br>L=0.5mH<br>150<br>mJ<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~<br>~~a~~|||
|**Electrical Characteristics**(TA=25°C Unless Otherwise Noted)|||
|**SM3106NSU**<br>**Symbol**<br>**Parameter**<br>**Test Conditions**<br>**Min.**<br>**Typ.**<br>**Max.**<br>**Unit**<br>**Static Characteristics**<br>~~ee~~<br>~~ee~~<br>~~i~~<br>~~ft~~|||
|BVDSS<br>Drain-Source Breakdown Voltage<br>VGS=0V, IDS=250µA<br>30<br>-<br>-<br>V<br>VDS=24V, VGS=0V<br>-<br>-<br>1<br>IDSS<br>Zero Gate Voltage Drain Current<br>TJ=85°C<br>-<br>-<br>30<br>µA<br>VGS(th)<br>Gate Threshold Voltage<br>VDS=VGS,IDS=250µA<br>1.3<br>1.8<br>2.5<br>V<br>IGSS<br>Gate Leakage Current<br>VGS=±20V, VDS=0V<br>-<br>-<br>±100<br>nA<br>VGS=10V, IDS=30A<br>-<br>4<br>4.8<br>RDS(ON)<br>a<br>Drain-Source On-state Resistance<br>VGS=4.5V, IDS=20A<br>-<br>5.8<br>7.5<br>mΩ<br>Gfs<br>Forward Transconductance<br>VDS=15V, IDS=32A<br>-<br>100<br>-<br>S<br>~~a DR~~<br>~~TT~~<br>~~Pp~~<br>~~FeCO~~<br>~~aee~~<br>~~ee~~<br>~~ee ee ee~~<br>~~Ff~~|||
|**Diode Characteristics**|||
|VSD<br>a<br>Diode Forward Voltage<br>ISD=30A, VGS=0V<br>-<br>0.85<br>1.1<br>V<br>trr<br>Reverse RecoveryTime<br>-<br>34<br>-<br>ns<br>Qrr<br>Reverse Recovery Charge<br>IDS=30A, dlSD/dt=100A/µs<br>-<br>33<br>-<br>nC<br>~~aSS~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~ft~~<br>~~|~~|||



Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

2 _www.sinopowersemi.com_ 

**®** sinopower WN 

## **SM3106NSU** 

## **Electrical Characteristics (Cont.)** (TA=25°C Unless Otherwise Noted) 

|**Symbol**<br>~~ee~~|**Parameter**<br>~~ee~~|**Test Conditions**<br>~~ee~~<br>~~ee~~|**SM3106NSU**<br>~~ee~~<br>~~Pt~~|**SM3106NSU**<br>~~ee~~<br>~~Pt~~|**SM3106NSU**<br>~~ee~~<br>~~Pt~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|
||||**Min.**<br>~~ee~~<br>~~Pt~~|**Typ.**<br>~~ee~~<br>~~Pt~~|**Max.**<br>~~ee~~<br>~~Pt~~||
|**Dynamic Characteristics**<br>b<br>~~eePt~~<br>~~es~~<br>~~ee~~|||||||
|RG<br>~~a es~~<br>~~ee~~|Gate Resistance<br>~~es~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~es~~<br>~~es~~<br>~~**|**~~|-<br>~~es~~<br>~~**|**~~|2<br>~~es~~|-<br>~~es~~|Ω<br>~~es~~|
|Ciss<br>~~a es~~<br>~~ee~~<br>~~a~~|Input Capacitance<br>~~es~~<br>~~ee~~<br>~~eee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~es~~<br>~~es~~<br>~~**|**~~|-<br>~~es~~<br>~~**|**~~<br>~~Pf]~~|2500<br>~~es~~<br>~~Pf]~~|-<br>~~es~~<br>~~Pf]~~|pF<br>~~es~~|
|Coss<br>~~ee~~<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~eee~~||-<br>~~**|**~~<br>~~Pf]~~<br>~~PT~~|460<br>~~Pf]~~<br>~~PT~~|-<br>~~Pf]~~<br>~~PT~~||
|Crss<br>~~a~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~eee~~<br>~~ee~~||-<br>~~Pf]~~<br>~~PT~~<br>~~Pt~~|350<br>~~Pf]~~<br>~~PT~~<br>~~Pt~~|-<br>~~Pf]~~<br>~~PT~~<br>~~Pt~~||
|td(ON)<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~eee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω|-<br>~~PT~~<br>~~Pt~~<br>~~Pf~~|15<br>~~PT~~<br>~~Pt~~<br>~~Pf~~|28<br>~~PT~~<br>~~Pt~~<br>~~Pf~~|ns|
|tr<br>~~a~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~eee~~||-<br>~~Pt~~<br>~~Pf~~<br>~~P|~~|15<br>~~Pt~~<br>~~Pf~~<br>~~P|~~|28<br>~~Pt~~<br>~~Pf~~<br>~~P|~~||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-off Delay Time<br>~~eee~~<br>~~ee~~||-<br>~~Pf~~<br>~~P|~~<br>~~Pt~~|57<br>~~Pf~~<br>~~P|~~<br>~~Pt~~|90<br>~~Pf~~<br>~~P|~~<br>~~Pt~~||
|tf<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~||-<br>~~P|~~<br>~~Pt~~|25<br>~~P|~~<br>~~Pt~~|40<br>~~P|~~<br>~~Pt~~||
|**Gate Charge Characteristics**<br>b<br>~~a~~<br>~~ee~~<br>~~Pt~~<br>~~a~~|||||||
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=15V, VGS=4.5V,<br>IDS=30A<br>~~ee~~|-<br>~~Pt~~|22<br>~~Pt~~|-<br>~~Pt~~|nC|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=15V, VGS=10V,<br>IDS=30A<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~Pt~~<br>~~PT~~|50<br>~~Pt~~<br>~~PT~~|70<br>~~Pt~~<br>~~PT~~||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~Pt~~<br>~~PT~~<br>~~Pt~~|8<br>~~Pt~~<br>~~PT~~<br>~~Pt~~|-<br>~~Pt~~<br>~~PT~~<br>~~Pt~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~||-<br>~~PT~~<br>~~Pt~~|14<br>~~PT~~<br>~~Pt~~|-<br>~~PT~~<br>~~Pt~~||



3 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

**®** 

## **SM3106NSU** 

## **Typical Operating Characteristics** 

**Power Dissipation** 

**==> picture [194 x 506] intentionally omitted <==**

**----- Start of picture text -----**<br>
60<br>50<br>40<br>30<br>20<br>10<br>T =25oC<br>C<br>0<br>0 20 40 60 80 100 120 140 160<br>TJ - Junction Temperature (°C)<br>Safe Operation Area<br>400<br>100<br>1ms<br>10ms<br>10 100ms<br>1s<br>DC<br>1<br>TC=25OC<br>0.1 a<br>0.01 0.1 1 10 100<br> VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Drain Current** 

**==> picture [194 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>80<br>60<br>40<br>20<br>TC=25oC,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>TJ - Junction Temperature (°C)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Thermal Transient Impedance** 

**==> picture [195 x 217] intentionally omitted <==**

**----- Start of picture text -----**<br>
2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>0.01<br>Single Pulse<br>Mounted on 1in 2  pad<br>1E-3 RθJA :50oC/W<br>1E-4 1E-3 0.01 0.1 1 10 100<br>Square Wave Pulse Duration (sec)<br>Normalized Effective Transient<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

4 

**®** 

## **SM3106NSU** 

## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

**==> picture [192 x 504] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>125 VGS=4.5,5,6,7,8,9,10V<br>100<br>4V<br>75<br>50<br>3.5V<br>25<br>3V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br> VDS - Drain-Source Voltage (V)<br>Gate-Source On Resistance<br>15<br>IDS=30A<br>12<br>9<br>6<br>3<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**==> picture [133 x 8] intentionally omitted <==**

**----- Start of picture text -----**<br>
Drain-Source On Resistance<br>**----- End of picture text -----**<br>


**==> picture [194 x 504] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>9<br>8<br>7 VGS=4.5V<br>6<br>5<br>V =10V<br>GS<br>4<br>3<br>2<br>1<br>0 30 60 90 120 150<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>IDS=250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>TJ - Junction Temperature (°C)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

5 

**®** 

## **SM3106NSU** 

## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

**==> picture [201 x 508] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.0<br>V GS  = 10V<br>1.8  I DS  = 30A<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>R ON @T j =25 o C: 4mΩ<br>0.2 i<br>-50 -25 0 25 50 75 100 125 150<br>  TJ- Junction Temperature (°C)<br>Capacitance<br>4200<br>Frequency=1MHz<br>3600<br>3000<br>Ciss<br>2400<br>1800<br>1200<br>600 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**==> picture [192 x 180] intentionally omitted <==**

**----- Start of picture text -----**<br>
100<br>T =150oC<br>j<br>10<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**==> picture [121 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
VSD - Source-Drain Voltage (V)<br>**----- End of picture text -----**<br>


**Gate Charge** 

**==> picture [191 x 219] intentionally omitted <==**

**----- Start of picture text -----**<br>
10<br>V DS =15V<br>9  IDS=30A<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 10 20 30 40 50<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

6 

_www.sinopowersemi.com_ 

sinopower **®** 

**SM3106NSU** 

## **Typical Operating Characteristics (Cont.)** 

## **Transfer Characteristics** 

**==> picture [191 x 227] intentionally omitted <==**

**----- Start of picture text -----**<br>
150<br>120 T =25oC<br>j<br>90<br>60<br>T =125oC<br>j<br>30 o<br>T =-55 C<br>j<br>y,<br>0<br>0 aL 1 2 3 4 5 6 7 8<br>VGS - Gate-Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

7 

**®** sinopower WA. 

**SM3106NSU** 

## **Avalanche Test Circuit and Waveforms** 

**==> picture [167 x 104] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


**==> picture [161 x 118] intentionally omitted <==**

**----- Start of picture text -----**<br>
tp VDSX(SUS)<br>IAS rn VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

**==> picture [176 x 108] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>RD<br>DUT<br>VGS<br>RG<br>d VDD<br>tp<br>o&<br>**----- End of picture text -----**<br>


**==> picture [147 x 92] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


8 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

**®** sinopower vw 

**SM3106NSU** 

## **Package Information** 

## **TO-252-3** 

**==> picture [340 x 256] intentionally omitted <==**

**----- Start of picture text -----**<br>
E A<br>b3 c2 E1<br>= i ) (Oh<br>i<br>c<br>b e<br>SEE VIEW A<br>GAUGE PLANE SEATING PLANE<br>L<br>Ea f+<br>VIEW A<br>L3<br>D1<br>D<br>H<br>L4<br>0.25 A1<br>0<br>**----- End of picture text -----**<br>


**==> picture [455 x 314] intentionally omitted <==**

**----- Start of picture text -----**<br>
SYM MILLIMETERS TO-252-3 INCHES RECOMMENDED LAND PATTERN<br>6.25 MIN.<br>BOL MIN. MAX. MIN. MAX.<br>A 2.18 2.39 0.086 0.094<br>=<br>A1 0.13 0.005<br>b 0.50 0.89 0.020 0.035<br>b3 4.95 5.46 0.195 0.215 6.8 MIN.<br>c 0.46 0.61 0.018 0.024<br>—————o e<br>c2 0.46 0.89 0.018 0.035<br>+ D —+ 5.33 6.22 + 0.210 + 0.245 6.6 gy<br>D1 4.57 6.00 0.180 0.236<br>E 6.35 6.73 0.250 0.265<br>E1 3.81 6.00 0.150 0.236 3 MIN.<br>SS Ilaleo<br>e 2.29 BSC 0.090 BSC<br>a H 9.40 10.41 0.370 0.410 2.286<br>L 0.90 1.78 0.035 0.070<br>1.5 MIN.<br>L3 0.89 2.03 0.035 0.080<br>4.572<br>L4 1.02 0.040 os<br>—<br>ee 0 0° 8° 0° 8° UNIT: mm<br>Note : Follow JEDEC TO-252 .<br>Copyright  Sinopower Semiconductor, Inc. 9 www.sinopowersemi.com<br>Rev. A.2 - December, 2013<br>**----- End of picture text -----**<br>


## **RECOMMENDED LAND PATTERN** 

_www.sinopowersemi.com_ 

> **SM3106NSU** RK **®** 

## **Carrier Tape & Reel Dimensions** 

**==> picture [317 x 347] intentionally omitted <==**

**----- Start of picture text -----**<br>
OD0 P0 P2 P1 A<br>fa<br>a ee<br>K0 ver B A0 OD1 B A<br>SECTION A-A<br>=<br>SECTION B-B<br>d<br>v<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±2.00|2.00<br>50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  1.5 MIN.|20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±0.20|2.50±0.20|



(mm) 

10 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

sinopower **®** UX 

**SM3106NSU** 

## **Taping Direction Information** 

## **TO-252-3** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

11 

**®** 

## **SM3106NSU** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~————_——~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S—————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, 

Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - December, 2013 

_www.sinopowersemi.com_ 

12
Updated at February 12, 2024
About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →
Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →
Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →