SM3016NSU

SM3016NSU, Single MOSFET, N Channel, 30V, TO-252-2

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 30
Package: View
VGS (±V): 20
VTH(V) typ.: 1.8
ID (A) TC=25: 75
Rg (Ω) max.: 3.1
Rg (Ω) typ.: 2.6
Ciss (pF) typ.: 1680
Coss (pF) typ.: 250
Crss (pF) typ.: 160
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 5
RON(mΩ max) 4.5V max.: 6.6
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
eA **®** 

## **SM3016NSU** 

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®<br> N-Channel Enhancement Mode MOSFET<br>Features Pin Description<br>• 30V/75A,<br>D<br>         RDS(ON)=5mΩ (Max.) @ VGS=10V<br>S<br>         RDS(ON)=6.9mΩ (Max.) @ VGS=4.5V<br>•      Reliable and Rugged . G<br>•      Lead Free and Green Devices Available<br>Top View of TO-252-3<br> (RoHS Compliant)<br>•      ESD Protection<br>D<br>**----- End of picture text -----**<br>


- HBM ESD protection level pass 2KV 

- 100% UIS + R Tested g 

## **Applications** 

- Power Management in Desktop Computer or 

- DC/DC Converters. 

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G<br>S<br>N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking Information** 

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SM3016NS Package Code<br>    U : TO-252-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code     C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code<br>Assembly Material<br>    G : Halogen and Lead Free Device<br>SM3016NS  U : SM3016N XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “ Green ” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

**SM3016NSU** 

## **®** sinopower MA 

## **Absolute Maximum Ratings** 

|~~PR~~|||||
|---|---|---|---|---|
|**Symbol**<br>~~PR~~|**Parameter**<br>||**Rating**<br>|**Unit**<br>|
|**Common Ratings **(TA=25°C Unless Otherwise Noted)<br>~~PR~~|||||
|VDSS<br>~~os~~|Drain-Source Voltage<br>~~os~~||30<br>~~os~~|V<br>~~os~~<br>~~a~~|
|VGSS<br>~~os~~<br>~~a~~|Gate-Source Voltage<br>~~os~~<br>~~a~~||±20<br>~~os~~<br>~~a~~||
|TJ<br>~~a~~|Maximum Junction Temperature<br>~~a~~||150<br>~~a~~|°C<br>~~a~~|
|TSTG<br>~~a~~|Storage Temperature Range<br>~~a~~||-55 to 150<br>~~a~~|°C<br>~~a~~|
|IS<br>~~a~~<br>~~ee~~|Diode Continuous Forward Current<br>~~a~~<br>~~eeee~~||30<br>~~a~~<br>~~ee~~|A<br>~~a~~|
|IDP<br>~~a~~<br>~~ee~~|300μs Pulse Drain Current Tested<br>~~a~~<br>~~ee~~|TC=25°C<br>~~a~~<br>~~ee~~|140<br>~~a~~<br>~~ee~~||
|||TC=100°C<br>~~ee~~<br>~~rr~~|90<br>~~ee~~<br>~~rr~~||
|ID<br>~~ee~~<br>~~ee~~|Continuous Drain Current<br>~~ee ~~<br>~~ee~~|TC=25°C<br> ~~ee~~<br>~~ee~~<br>~~a~~|75<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||TC=100°C<br>~~ee~~<br>~~a~~|47<br>~~ee~~<br>~~ee~~||
|PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>|TC=25°C<br>~~a ~~<br>~~ee~~<br>~~a~~<br>|50<br> ~~ee~~<br>~~ee~~<br>~~eee~~<br>|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~a~~<br>|20<br>~~ee~~<br>~~eee~~<br>||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>|Steady State<br>~~a~~<br>|2.5<br>~~eee~~<br>|°C/W|
|RθJA<br>~~ee~~<br>~~PR~~|Thermal Resistance-Junction to Ambient<br>~~ee~~|t≤10s<br>~~ee~~<br>~~a~~|15<br>~~ee~~<br>~~ee~~||
|||Steady State<br>~~ee~~<br>~~a~~|50<br>~~ee~~<br>~~ee~~||
|IAS<br>a<br>~~PR~~|Avalanche Current, Single pulse (L=0.5mH)<br>~~a~~||20<br>~~ee~~|A|
|EAS<br>a<br>~~PRI~~|Avalanche Energy, Single pulse (L=0.5mH)<br>~~a~~||100<br>~~ee~~|mJ|



**Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|~~PR~~|~~a~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~PR~~<br>~~eo~~|**Parameter**<br>~~a~~<br>|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~PR a~~<br>~~eoPRa~~||||||||
|BVDSS<br>~~eoPR~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=250µA<br>~~eee~~||30<br>~~eee~~|-<br>~~eee~~|-<br>~~eee~~|V<br>~~eee~~|
|IDSS<br>~~PR ~~<br>~~a~~|Zero Gate Voltage Drain Current<br> ~~a~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~eee~~<br>~~a~~||-<br>~~eee~~|-<br>~~eee~~|1<br>~~eee~~|µA<br>~~eee~~|
||||TJ=85°C<br>~~eee~~<br>~~a~~|-<br>~~eee~~|-<br>~~eee~~|30<br>~~eee~~||
|VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage|VDS=VGS,IDS=250µA<br>~~eee~~||1.5<br>~~eee~~|1.8<br>~~eee~~|2.5<br>~~eee~~|V<br>~~eee~~|
|IGSS<br>~~a~~|Gate Leakage Current|VGS=±20V, VDS=0V<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA|
|RDS(ON)<br>b <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=30A<br>TJ=125°C<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|4.1<br>~~ee~~<br>~~ee~~|5<br>~~ee~~|mΩ|
||||TJ=125°C<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.3<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~||
|||VGS=4.5V, IDS=20A<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|5.3<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6.9<br>~~ee~~<br>~~ee~~||
|Gfs<br>~~a~~|Forward Transconductance|VDS=5V, IDS=20A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|40<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|S|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

**®** sinopower WN 

## **SM3016NSU** 

## **Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~|
|---|---|---|---|---|---|---|
|**Diode Characteristics**<br>~~ce~~<br>~~PR~~|||||||
|VSD<br>b<br>~~ce~~<br>~~PR~~|Diode Forward Voltage<br>~~ce~~<br>|ISD=20A, VGS=0V<br>~~ce~~<br>|-<br>~~ce~~<br>|0.8<br>~~ce~~<br>|1.1<br>~~ce~~<br>|V<br>~~ce~~|
|trr<br>~~PRa~~<br>~~a~~|Reverse Recovery Time<br>~~a~~<br>~~ee~~|IF=20A, dlSD/dt=100A/µs<br>~~a~~<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~|~~<br>~~|~~|14<br>~~a~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~|ns<br>~~|~~|
|ta<br>~~a~~<br>~~a~~<br>~~ee~~|Charge Time<br>~~a~~<br>~~ee~~<br>~~ee~~||**-**<br>~~a~~<br>~~|~~<br>~~|~~|7.5<br>~~a~~<br>~~|~~<br>~~|~~|-<br>~~a~~<br>~~|~~<br>~~|~~||
|tb<br>~~a~~<br>~~ee~~|Discharge Time<br>~~ee~~<br>~~ee~~||**-**<br>~~|~~<br>~~|~~|6.5<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|Qrr<br>~~a~~<br>~~ee~~<br>~~a~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~<br>~~a~~||**-**<br>~~|~~<br>~~|~~<br>~~ee~~|6<br>~~|~~<br>~~|~~<br>~~ee~~|-<br>~~|~~<br>~~|~~<br>~~ee~~|nC<br>~~ee~~|
|**Dynamic Characteristics**<br>c<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~eeee~~<br>~~a~~|||||||
|RG<br>~~a~~<br>~~Oe~~<br>~~a~~|Gate Resistance<br>~~a~~<br>~~Oe~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~Oe~~|2.1<br>~~ee~~<br>~~Oe~~<br>~~re~~|2.6<br>~~ee ~~<br>~~Oe~~<br>~~re~~|3.1<br> ~~ee~~<br>~~Oe~~<br>~~re~~|Ω<br>~~ee~~<br>~~Oe~~|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz|1344<br>~~re~~<br>~~|~~|1680<br>~~re~~<br>~~|~~|2016<br>~~re~~<br>~~|~~|pF|
|Coss<br>~~a~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~||175<br>~~re~~<br>~~|~~<br>~~|~~|250<br>~~re~~<br>~~|~~<br>~~|~~|325<br>~~re~~<br>~~|~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~||96<br>~~|~~<br>~~|~~<br>~~a~~|160<br>~~|~~<br>~~|~~<br>~~a~~|224<br>~~|~~<br>~~|~~<br>~~a~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~a~~|-<br>~~|~~<br>~~a~~<br>~~ee~~|14<br>~~|~~<br>~~a~~<br>~~ee~~|21<br>~~|~~<br>~~a~~<br>~~ee~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~||-<br>~~a~~<br>~~ee~~<br>~~**|**~~|11<br>~~a~~<br>~~ee~~<br>~~**|**~~|16<br>~~a~~<br>~~ee~~<br>~~**|**~~||
|td(OFF)<br>~~ee~~<br>~~ee~~|Turn-off DelayTime||-<br>~~ee~~<br>~~**|**~~|51<br>~~ee~~<br>~~**|**~~|75<br>~~ee~~<br>~~**|**~~||
|tf<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~a~~||-<br>~~**|**~~<br>~~a~~|17<br>~~**|**~~<br>~~a~~|25<br>~~**|**~~<br>~~a~~||
|**Gate Charge Characteristics**<br>c|||||||
|Qg|Total Gate Charge<br>~~ee~~|VDS=15V, VGS=4.5V,<br>IDS=30A<br>~~ee~~|-<br>~~**|**~~|14<br>~~**|**~~|20<br>~~**|**~~|nC|
|Qg<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~ee~~|VDS=15V, VGS=10V,<br>IDS=30A<br>~~a~~<br>~~ee~~<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~**|**~~|31<br>~~a~~<br>~~**|**~~|43<br>~~a~~<br>~~**|**~~||
|Qgth<br>~~a~~|Threshold Gate Charge<br>~~ee~~<br>~~a~~||-<br>~~**|**~~<br>~~a~~|1.4<br>~~**|**~~<br>~~a~~|2<br>~~**|**~~<br>~~a~~||
|Qgs<br>~~a~~|Gate-Source Charge<br>~~a~~||-<br>~~a~~<br>~~|~~|2.8<br>~~a~~<br>~~|~~|3.9<br>~~a~~<br>~~|~~||
|Qgd<br>~~a~~|Gate-Drain Charge||-<br>~~|~~|8<br>~~|~~|11.2<br>~~|~~||



Note b ： Pulse test ; pulse width≤300µs, duty cycle≤2%. Note c ： Guaranteed by design, not subject to production testing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

## **SM3016NSU** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

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60<br>50<br>40<br>30<br>20<br>10<br>T =25oC<br>0 C<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature ( ° C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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90<br>75<br>60<br>45<br>30<br>15<br>0 TC=25oC,VG=10V<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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400 4<br>100<br>1 Duty = 0.5<br>300µs<br>1ms 0.2<br>10ms<br>10 0.1<br>100ms<br>0.05<br>1s 0.02<br>0.1<br>DC<br>0.01<br>1<br>Single Pulse Mounted on 1in 2  pad<br>0.1 a TC=25OC 0.01 RθJA :15oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

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## **SM3016NSU** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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140<br>V GS =5,6,7,8,9,10V<br>120 4V<br>100<br>80<br>3.5V<br>60<br>40<br>3V<br>20<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

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21<br>I =30A<br>DS<br>18<br>15<br>12<br>9<br>6<br>3<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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10<br>9<br>8<br>7<br>6 VGS=4.5V<br>5<br>V =10V<br>GS<br>4<br>3<br>2<br>1<br>0 20 40 60 80 100 120 140<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS  =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature ( ° C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

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## **SM3016NSU** 

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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>2.0<br>V  = 10V<br>GS<br>1.8  I  = 30A<br>DS<br>1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 i R ON @T j =25 o C: 4.1mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature ( ° C)<br>Capacitance<br>2400<br>Frequency=1MHz<br>2100<br>1800<br>Ciss<br>1500<br>1200<br>900<br>600<br>300 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward** 

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100<br>o<br>10 T =150 C<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 15V<br>9 DS<br> I = 30A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 4 8 12 16 20 24 28 32<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

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**®** sinopower MA 

**SM3016NSU** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

7 

**®** sinopower VN 

**SM3016NSU** 

## **Package Information** 

**TO-252-3** 

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**----- Start of picture text -----**<br>
E A<br>b3 c2 E1<br>c<br>b e<br>SEE VIEW A<br>GAUGE PLANE SEATING PLANE<br>L<br>VIEW A<br>L3<br>D1<br>D<br>H<br>L4<br>0.25 A1<br>0<br>**----- End of picture text -----**<br>


|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|**RECOMMENDED LAND PATTERN**<br>**SYM**<br>**BO**<br>**L**<br>**MIN.**<br>**MAX.**<br>2.39<br>4.95<br>5.46<br>0.46<br>0.61<br>0.13<br>5.33<br>A<br>A1<br>b3<br>c<br>c2<br>D<br>D1<br>E<br>**MILLIMETERS**<br>b<br>0.50<br>0.89<br>**TO-252-3**<br>4.57<br>6.35<br>6.73<br>6.22<br>**MIN.**<br>**MAX.**<br>**INCHES**<br>0.094<br>0.020<br>0.035<br>0.195<br>0.215<br>0.018<br>0.024<br>0.210<br>0.180<br>0.250<br>0.265<br>2.18<br>0.245<br>0.086<br>0.005<br>E1<br>0.035<br>0.46<br>0.89<br>0.018<br>0.150<br>3.81<br>6.00<br>6.00<br>0.236<br>0.236<br>6.8 MIN.<br>3 MIN.<br>6.25 MIN.<br>6.6<br>-<br>-<br>~~Pe==~~<br>~~———~~<br>oo Tv<br>~~Se~~|
|---|---|---|---|---|---|---|
|2.29 BSC<br>0.090 BSC<br>e|||||||
|Note : Follow JEDEC TO-252 .<br>0.070<br>0.410<br>L3<br>H<br>L<br>9.40<br>0.90<br>1.78<br>10.41<br>0.370<br>0.035<br>0.040<br>L4<br>1.02<br>0.89<br>2.03<br>0.035<br>0.080<br>~~0~~<br>8°<br>0°<br>8°<br>0°<br>-<br>-<br>~~ee ee~~<br>~~ee ee~~|2.286<br>4.572||||UNIT: mm<br>1.5 MIN.||



Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

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8 

sinopower **®** A 

**SM3016NSU** 

## **Carrier Tape & Reel Dimensions** 

**==> picture [316 x 339] intentionally omitted <==**

**----- Start of picture text -----**<br>
4 @ OD0 Sd P0 P2 je P1 6 |e A )<br>if K0 urcaite'esy B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

sinopower **®** YX 

**SM3016NSU** 

## **Taping Direction Information** 

**TO-252-3** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

_www.sinopowersemi.com_ 

10 

**®** sinopower MA 

**SM3016NSU** 

## **Disclaimer** 

Sinopower Semiconductor, Inc. (hereinafter “ Sinopower ” ) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’ s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower ’ s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015 

**®** 

## **SM3016NSU** 

## **Classification Reflow Profiles** 

|**Classification Reflow Profiles**|**Classification Reflow Profiles**||
|---|---|---|
|**Profile Feature**<br>**Sn-Pb Eutectic Assembly**||**Pb-Free Assembly**|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)<br>100°C<br>150°C<br>60-120 seconds||150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)<br>3°C/second max.||3°C/second max.|
|Liquidous temperature (TL)<br>183°C||217°C|
|Time at liquidous (tL)<br>60-150 seconds||60-150 seconds|
|Peak package body Temperature<br>(Tp)*<br>See Classification Temp in table 1|See Classification Temp in table 1|See Classification Temp in table 2|
|Time (tP)** within 5°C of the specified<br>classification temperature (Tc)<br>20** seconds||30** seconds|
|Average ramp-down rate (Tpto Tsmax)<br>6°C/second max.||6°C/second max.|
|Time 25°C to peak temperature<br>6 minutes max.||8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.|||
|**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|
|Table 1. SnPb Eutectic Process–Classification Temperatures (Tc)|||
|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm**~~**3**~~<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=—=SS===~~|||
|Table 2. Pb-free Process–Classification Temperatures (Tc)|||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6 mm<br>260°C<br>260°C<br>260°C<br>1.6 mm–2.5 mm<br>260°C<br>250°C<br>245°C<br>≥2.5mm<br>250 °C<br>245 °C<br>245 °C<br>~~SS~~|||
|**Reliability Test Program**|||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000 Hrs,100% of VGS max@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~——————~~|||



## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.3 - January, 2015
Updated at February 12, 2024
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