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SM2A18NSV
SM2A18NSV, Single MOSFET, N Channel, 200V, SOT-223
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Datasheet
**®** sinopower WN
**SM2A1 8NSV ®**
N-Channel Enhancement Mode MOSFET ~~pO~~
## **Features**
## **Pin Description**
- 200V/1.1A,
- DS(ON)= 1140m Ω (max.) @ VGS= 10V
- DS(ON)= 1300m Ω (max.) @ VGS= 4.5V
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G<br>D<br>S<br>**----- End of picture text -----**<br>
- 100% UIS+Rg tested
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
## **Applications**
- Power Management in TV Inverter.
Top View SOT-223
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D<br>G<br>S<br>**----- End of picture text -----**<br>
N-Channel MOSFET
## **Ordering and Marking I nform ation**
SM2A18NS Package Code V : SOT-223 Assembly Material Operating Junction Temperature Range Handling Code C : -55 to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device ~~pe~~ | | 2A18N SM2A18NS V: XXXXX - Lot Code XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders.
Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
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## **SM2A1 8NSV**
## **®** sinopower WN
**Absolute Maxim um Ratings** (TA = 25 ° C Unless Otherwise Noted)
|**Symbol**<br>~~I~~|**Parameter**<br>~~I~~|**Parameter**<br>~~I~~|**Rating**<br>~~I~~|**Unit**<br>~~I~~|
|---|---|---|---|---|
|**Common Ratings **(TA= 25°C Unless Otherwise Noted)<br>~~a~~|||||
|VDSS<br>~~so~~|Drain-Source Voltage<br>~~so~~||200<br>~~so~~|V<br>~~so~~|
|VGSS<br>~~so~~<br>~~a~~|Gate-Source Voltage<br>~~so~~<br>~~a~~||±20<br>~~so~~||
|TJ<br>~~a~~|Maximum Junction Temperature<br>~~a~~||150|°C|
|TSTG<br>~~a~~<br>~~a~~|Storage Temperature Range<br>~~a~~<br>~~a~~<br>~~es~~||-55 to 150<br>~~es~~||
|IS<br>~~a~~<br>~~s~~|Diode Continuous Forward Current<br>~~a~~<br>~~es~~<br>~~sO~~|TA=25°C<br>~~a~~<br>~~es~~<br>~~O~~|1.1<br>~~es~~<br>~~O~~|A<br>~~O~~|
|ID<br>~~s~~|Continuous Drain Current<br>~~sO~~|TA=25°C<br>~~O~~|1.1<br>~~O~~|A<br>~~O~~|
|||TA=70°C<br>~~a~~|0.9<br>~~a~~||
|IDM<br>a<br>~~e~~|Pulsed Drain Current<br>~~ee~~|TA=25°C<br>~~a~~<br>~~e~~|4<br>~~a~~<br>~~e~~|A<br>~~e~~|
|PD<br>~~e~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~<br>~~a~~|TA=25°C<br>~~e~~<br>~~a~~<br>~~a~~|3.5<br>~~e~~<br>~~a~~<br>~~ee~~|W<br>~~e~~<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~a~~|2.2<br>~~a~~<br>~~ee~~||
|RθJA<br>b<br>~~i!~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~i!~~|t≤10s<br>~~a~~<br>~~i!~~|35<br>~~ee~~<br>~~i!~~|°C/W<br>~~i!~~<br>~~ee~~|
|||SteadyState<br>~~i!~~<br>~~ee~~|75<br>~~i!~~<br>~~ee~~|°C/W<br>~~i!~~<br>~~ee~~<br>~~ee~~|
|IAS<br>c<br>~~a~~|Avalanche Current, Singlepulse(L=0.5mH)||1|A<br>~~ee~~|
|EAS<br>c<br>~~a~~|Avalanche Energy, Singlepulse(L=0.5mH)||0.25|mJ|
Note a: Pulse width is limited by maximum junction temperature.
- b: Surface Mounted on 1in[2] pad area.
- c: UIS tested and pulse width are limited by maximum junction temperature 150°C (initial temperature Tj=25°C).
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**SM2A1 8NSV**
## **®** sinopower WN
## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted)
|~~a~~|~~re~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~<br>~~Co~~|**Parameter**<br>~~re~~<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~a~~<br>~~re~~<br>~~Co~~||||||||
|BVDSS<br>~~Cors~~<br>~~**e**~~|Drain-Source Breakdown Voltage<br>~~rs~~<br>~~**e**e~~|VGS=0V, IDS=250µA<br>~~rs~~<br>~~ee~~||200<br>~~rs~~<br>~~ee~~|-<br>~~rs~~<br>~~ee~~|-<br>~~rs~~<br>~~ee~~|V<br>~~rs~~<br>~~ee~~|
|IDSS<br>~~rs~~<br>~~**e**~~|Zero Gate Voltage Drain Current<br>~~rs~~<br>~~**e**e~~|VDS=160V, VGS=0V<br>TJ=85°C<br>~~rs~~<br>~~ee~~<br>~~tf~~||-<br>~~rs~~<br>~~ee~~<br>~~tfff~~|-<br>~~rs~~<br>~~ee~~<br>~~ff~~|1<br>~~rs~~<br>~~ee~~<br>~~ff~~|µA<br>~~rs~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~tf~~|-<br>~~ee~~<br>~~tfff~~|-<br>~~ee~~<br>~~ff~~|30<br>~~ee~~<br>~~ff~~||
|VGS(th)<br>~~**e**~~|Gate Threshold Voltage<br>~~**e**e~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~tf~~<br>~~s~~||1<br>~~ee~~<br>~~tf ff~~<br>~~s~~|2<br>~~ee~~<br>~~ff~~<br>~~s~~|3<br>~~ee~~<br>~~ff~~<br>~~s~~|V<br>~~ee~~<br>~~s~~|
|IGSS<br>~~**e**~~<br>~~re~~<br>~~ee~~|Gate Leakage Current<br>~~**e**e ~~<br>~~re~~<br>~~ee~~|VGS=±20V, VDS=0V<br> ~~ee~~<br>~~re~~<br>~~e~~||-<br>~~ee~~<br>~~re~~<br>~~e~~~~**e**~~|-<br>~~ee~~<br>~~re~~<br>~~**e**~~|±10<br>~~ee~~<br>~~re~~<br>~~**e**e~~|µA<br>~~ee~~<br>~~re~~<br>~~e~~|
|RDS(ON)<br>d <br>~~ee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=10V, IDS=0.5A<br>~~e~~<br>||-<br>~~e~~~~**e**~~<br>~~ee~~|950<br>~~**e**~~<br>~~ee~~|1140<br>~~**e**e~~<br>~~ee~~|mΩ<br>~~e~~|
|||VGS=4.5V, IDS=0.5A<br>~~e~~<br>~~e~~||~~e~~~~**e**~~<br>~~eee~~|1000<br>~~**e**~~<br>~~ee~~|1300<br>~~**e**e~~<br>~~ee~~|mΩ<br>~~e~~|
|**Diode Characteristics**<br>~~ee~~<br>~~e~~~~**e**e~~<br>~~eee ee ee~~<br>~~a~~<br>~~ee~~<br>~~eeee~~||||||||
|VSD<br>d<br>~~a~~|Diode Forward Voltage<br>~~ee~~|ISD=1A, VGS=0V<br>~~ee~~||-<br>~~ee~~|0.8|1.3|V|
|trr<br>~~a~~<br>~~ee~~<br>~~ee~~|Reverse Recovery Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|ISD=1A, dlSD/dt=100A/µs<br>~~ee ~~<br>~~ee~~||-<br> ~~ee~~<br>~~ee~~<br>~~Pf~~|51<br>~~ee~~<br>~~Pf~~|-<br>~~ee~~<br>~~Pf~~|ns<br>~~ee~~<br>~~Pf~~|
|Qrr<br>~~ee~~<br>~~ee~~|Reverse Recovery Charge<br>~~ee~~<br>~~ee~~|||-<br>~~ee~~<br>~~Pf~~|54<br>~~ee~~<br>~~Pf~~|-<br>~~ee~~<br>~~Pf~~|nC<br>~~ee~~<br>~~Pf~~|
|**Dynamic Characteristics**<br>e<br>~~ee~~<br>~~ee~~<br>~~Pf~~<br>~~a~~<br>~~es ee~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~es ee~~<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~<br>~~ee~~||-<br>~~Pf~~|3.7<br>~~Pf~~|-<br>~~Pf~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~es ee~~<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~||-<br>~~Pf~~<br>~~ft~~|250<br>~~Pf~~<br>~~ft~~|325<br>~~Pf~~<br>~~ft~~|pF|
|Coss<br>~~ee ~~<br>~~ee~~<br>~~re~~|Output Capacitance<br> ~~ee~~<br>~~eee~~|||-<br>~~Pf~~<br>~~ft~~<br>~~Pf~~|16<br>~~Pf~~<br>~~ft~~<br>~~Pf~~|-<br>~~Pf~~<br>~~ft~~<br>~~Pf~~||
|Crss<br>~~ee~~<br>~~re~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~eee~~|||-<br>~~ft~~<br>~~Pf~~<br>~~oe~~|4<br>~~ft~~<br>~~Pf~~<br>~~oe~~|-<br>~~ft~~<br>~~Pf~~<br>~~oe~~||
|td(ON)<br>~~re ~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br> ~~eee~~<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~||-<br>~~Pf~~<br>~~oe~~<br>~~Ft~~|8<br>~~Pf~~<br>~~oe~~<br>~~Ft~~|15<br>~~Pf~~<br>~~oe~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~eee~~|||-<br>~~oe~~<br>~~Ft~~<br>~~Pf~~|6<br>~~oe~~<br>~~Ft~~<br>~~Pf~~|11<br>~~oe~~<br>~~Pf~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~eee~~<br>~~ee~~|||-<br>~~Ft~~<br>~~Pf~~<br>~~Pf~~|13<br>~~Ft~~<br>~~Pf~~<br>~~Pf~~|24<br>~~Pf~~<br>~~Pf~~||
|tf<br>~~ee ~~<br>~~ee~~|Turn-off Fall Time<br> ~~eee~~<br>~~ee~~|||-<br>~~Pf~~<br>~~Pf~~|8<br>~~Pf~~<br>~~Pf~~|15<br>~~Pf~~<br>~~Pf~~||
|**Gate Charge Characteristics**<br>e<br>~~ee ee~~<br>~~Pf~~<br>~~et~~||||||||
|Qg<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=100V, VGS=4.5V,<br>IDS=1A<br>~~ee~~||-<br>~~tf~~|2.5<br>~~tf~~|-<br>~~tf~~|nC|
|Qg<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=100V, VGS=10V,<br>IDS=1A<br>~~ee~~||-<br>~~tf~~<br>~~{|~~|5.3<br>~~tf~~<br>~~{|~~|7.5<br>~~tf~~<br>~~{|~~||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~tf~~<br>~~{|~~<br>~~|~~|1.1<br>~~tf~~<br>~~{|~~<br>~~|~~|-<br>~~tf~~<br>~~{|~~<br>~~|~~||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~{|~~<br>~~|~~|0.7<br>~~{|~~<br>~~|~~|-<br>~~{|~~<br>~~|~~||
Note d: Pulse test; pulse width ≤ 300 µ s, duty cycle ≤ 2%. e: Guaranteed by design, not subject to production testing.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**®** sinopower WA
**SM2A1 8NSV**
## **Typical Operating Characteristics**
## **Power Dissipation**
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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25 o C<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>
## **Drain Current**
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1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>TA=25oC,VG=10V<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Safe Operation Area**
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10<br>1<br>\\{ 300 µ s<br>|<br>0.1<br>1ms<br>|<br>10ms<br>0.01 TA=25oC DC 1s 100ms<br>0.1 1 10 100 1000<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Thermal Transient Impedance**
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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01<br>1E-4 1E-3 0.01 0.1 1 10 100 1000<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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**SM2A1 8NSV**
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®<br>**----- End of picture text -----**<br>
## **Typical Operating Characteristics ( Cont.)**
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Output Characteristics<br>**----- End of picture text -----**<br>
**Drain-Source On Resistance**
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4.0 2100<br>V GS =4,4.5,5,6,7,8,9,10V<br>3.5 1800<br>3.5V<br>3.0<br>1500<br>2.5 VGS=4.5V<br>1200<br>2.0<br>900 V =10V<br>1.5 GS<br>600<br>1.0<br>3V<br>300<br>0.5<br>0.0 fo 0 ee<br>0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>3000 1.4<br>IDS=0.5A IDS=250 µ A<br>2500 1.2<br>2000 1.0<br>1500 0.8<br>1000 0.6<br>500 0.4<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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**SM2A1 8NSV**
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®<br>**----- End of picture text -----**<br>
## **Typical Operating Characteristics ( Cont.)**
**Drain-Source On Resistance**
**Source-Drain Diode Forward**
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3.0 4<br>V = 10V<br>GS<br> I = 0.5A<br>DS<br>2.5<br>2.0 1 T j =150 o C<br>1.5 o<br>T =25 C<br>j<br>1.0<br>0.5<br>0.0 RON@Tj=25oC: 950m Ω 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>Normalized On Resistance IS<br>**----- End of picture text -----**<br>
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Capacitance<br>320<br>Frequency=1MHz<br>280<br>Ciss<br>—<br>240<br>200<br>160<br>120<br>80<br>40<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>
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Gate Charge<br>10<br>V = 100V<br>DS<br>9<br> I = 1A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**®** sinopower WA.
**SM2A1 8NSV**
## **Avalanche Test Circuit and W aveform s**
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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>
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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>
## **Sw it ching Tim e Test Circuit and W aveform s**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>
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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**SM2A1 8NSV**
## **®** sinopower WN
## **Disclaim er**
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results.
The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information.
The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing.
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**SM2A1 8NSV**
sinopower **®**
## **Package I nform at ion**
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**----- Start of picture text -----**<br>
D<br>b2<br>PT ( )<br>SEE<br>VIEW A<br>| | |<br>“TIt)] ~ty Lly |<br>0<br>e c<br>| | | LL<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>| | =<br>VIEW A<br>SYM DT MILLIMETERS SOT-223 INCHES RECOMMENDED LAND PATTERN 3.1<br>BO PD LT<br>L MIN. MAX. MIN. MAX.<br>—a A 1.80 0.071 -a——<br>A1 0.02 0.10 0.001 0.004<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>es<br>i b2 2.90 3.10 0.114 0.122<br>a c 0.23 0.33 0.009 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>a E 6.70 7.30 0.264 0.287<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>L 0.75 0.030<br>e 0 s 0 ° 10 ° 0 ° 10 ° 0.81 2.3<br>ooo H F<br>Note : 1. Follow from JEDEC TO-261 AA.<br> 2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br> of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br> and interlead flash, but including any mismatch between the top<br> and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>
Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
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## **SM2A1 8NSV**
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**----- Start of picture text -----**<br>
®<br>**----- End of picture text -----**<br>
## **Carrier Tape & Reel Dim ensions**
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**----- Start of picture text -----**<br>
OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>: Lae SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|
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Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
**®** sinopower NA.
**SM2A1 8NSV**
## **Taping Direction I nform at ion**
## **SOT-223**
USER DIRECTION OF FEED
## **Classificat ion Profile**
Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
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**SM2A1 8NSV**
**®**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~Ss~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~S—————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080
Copyright Sinopow er Sem iconductor, Inc. Rev. A.1 - May, 2015
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Updated at February 12, 2024
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