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SM2630DSC
SM2630DSC, Dual MOSFET, N Channel, 30V, SOT-23-6
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|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **SM2630DSC** **==> picture [3 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> Dual N-Channel Enhancement Mode MOSFET ## **Features** ## **Pin Description** - 30V/4A, - RDS(ON)=39m Ω (max.) @ VGS=10V - RDS(ON)=68m Ω (max.) @ VGS=4.5V - Reliable and Rugged - Lead Free and Green Devices Available **==> picture [71 x 41] intentionally omitted <==** **----- Start of picture text -----**<br> D2<br>S1<br>D1 G2<br>S2<br>G1<br>**----- End of picture text -----**<br> Top View of SOT-23-6 - (RoHS Compliant) ## **Applications** - Power Management in Notebook Computer, - Portable Equipment and Battery Powered Systems. - Load Switch **==> picture [136 x 127] intentionally omitted <==** **----- Start of picture text -----**<br> (6)D1 (4)D2<br>(1) (3)<br>G1 G2<br>(5)S1<br>(2)S2<br>**----- End of picture text -----**<br> **==> picture [89 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> N-Channel MOSFET<br>**----- End of picture text -----**<br> ## **Ordering and Marking I nform ation** **==> picture [415 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> SM2630DS Package Code<br> C : SOT-23-6<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Temperature Range Handling Code<br>Package Code TR : Tape & Reel (3000ea/reel)<br>Assembly Material<br> G : Halogen and Lead Free Device<br>SM2630DS C : L30XX XX - Lot Code<br>**----- End of picture text -----**<br> Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. _ww w.sinopowersem i.com_ 1 Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 **®** sinopower WN **SM2630DSC** ## **Absolute Maxim um Ratings** (TA = 25 ° C unless otherwise noted) |**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**| |---|---|---|---|---| |VDSS|Drain-Source Voltage||30|V| |VGSS|Gate-Source Voltage||±20|| |ID|Continuous Drain Current|TA=25°C|4|A| |||TA=70°C|3.2|| |IDM|300µs Pulsed Drain Current|VGS=10V|16|| |IS|Diode Continuous Forward Current||1|| |TJ|Maximum Junction Temperature||150|°C| |TSTG|Storage Temperature Range||-55 to 150|| |PD|Maximum Power Dissipation|TA=25°C|1|W| |||TA=70°C|0.64|| |RθJA*|Thermal Resistance-Junction to Ambient|Steady state|125|°C/W| Note: *Surface Mounted on 1in[2 ] pad area. **Electrical Characteristics** (TA = 25 ° C unless otherwise noted) ~~a~~ **Symbol Parameter Test Conditions Min. Typ. Max. Unit Static Characteristics** ~~a~~ BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250 µ A 30 - - V ~~Peee~~ VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current µ A TJ=85°C - - 30 ~~ce~~ VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250 µ A 1.3 1.8 2.5 V ~~Fe ee eee eee~~ IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±10 µ A ~~Feee~~ RDS(ON) a Drain-Source On-State Resistance VGS=10V, IDS=4A - 32 39 m Ω VGS=4.5V, IDS=3A - 52 68 ~~eeeeee ee~~ **Diode Characteristics** ~~ee~~ VSDa Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time - 9.2 - ns ISD=4A, dlSD/dt=100A/ µ s ~~a—————~~ Qrr Reverse Recovery Charge ~~_-re——}+_}—~~ - 4.3 - nC _ww w.sinopowersem i.com_ 2 Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 **®** sinopower WN **SM2630DSC** ## **Electrical Characteristics ( Cont.)** (TA = 25 ° C unless otherwise noted) |**Symbol**<br>~~a a~~|**Parameter**<br>~~a~~|**Test Conditions**<br>~~es~~|**Test Conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~| |---|---|---|---|---|---|---|---| |**Dynamic Characteristics**<br>b|||||||| |Rg<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz||-|2.3|-|Ω| |Ciss<br>~~a~~<br>~~a~~|Input Capacitance|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~|~~||-<br>~~po~~<br>~~|~~|215<br>~~po~~|-<br>~~po~~|pF| |Coss<br>~~a~~<br>~~a~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~P|~~|37<br>~~P|~~|-<br>~~P|~~|| |Crss<br>~~a~~<br>~~a~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~P|~~<br>~~PT~~|28<br>~~P|~~<br>~~PT~~|-<br>~~P|~~<br>~~PT~~|| |td(ON)<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~||-<br>~~P|~~<br>~~PT~~<br>~~P|~~|5.3<br>~~P|~~<br>~~PT~~<br>~~P|~~|8<br>~~P|~~<br>~~PT~~<br>~~P|~~|ns| |Tr<br>~~ee~~<br>~~a~~<br>~~a ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~PT~~<br>~~P|~~<br>~~Pt~~|11<br>~~PT~~<br>~~P|~~<br>~~Pt~~|16<br>~~PT~~<br>~~P|~~<br>~~Pt~~|| |td(OFF)<br>~~a~~<br>~~a ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~Pt~~<br>~~PT~~|12<br>~~P|~~<br>~~Pt~~<br>~~PT~~|17<br>~~P|~~<br>~~Pt~~<br>~~PT~~|| |Tf<br>~~a ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~Pt~~<br>~~PT~~|2.6<br>~~Pt~~<br>~~PT~~|4<br>~~Pt~~<br>~~PT~~|| |**Gate Charge Characteristics**<br>b<br>~~ee~~<br>~~PT~~<br>~~eeeee~~|||||||| |Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=15V,<br>IDS=4A<br>~~ee~~<br>~~ee~~|VGS=4.5V,<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~eee~~|3<br>~~ee~~<br>~~eee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~|nC| ||||VGS=10V<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~eee~~|5.8<br>~~ee~~<br>~~eee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~|| |Qgs<br>~~a~~<br>~~re~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~|VDS=15V, VGS=10V,<br>IDS=4A<br>~~ee eee~~<br>~~ee ~~<br>~~ee~~||-<br>~~eee~~<br> ~~eee~~<br>~~po~~<br>~~Pt~~|1.1<br>~~eee~~<br>~~eee ~~<br>~~po~~<br>~~Pt~~|-<br>~~eee~~<br> ~~ee~~<br>~~po~~<br>~~Pt~~|| |Qgd<br>~~re~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~po~~<br>~~Pt~~|1.5<br>~~po~~<br>~~Pt~~|-<br>~~po~~<br>~~Pt~~|| |Qgth<br>~~re ~~<br>~~ee~~|Threshold Gate Charge<br> ~~ee~~|||~~po~~<br>~~Pt~~<br>~~PE~~|0.5<br>~~po~~<br>~~Pt~~<br>~~PE~~|~~po~~<br>~~Pt~~<br>~~PE~~|| Note a: Pulse test; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note b: Guaranteed by design, not subject to production testing. _ww w.sinopowersem i.com_ 3 Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 **SM2630DSC** **®** ## **Typical Operating Characteristics** ## **Drain Current** **Power Dissipation** **==> picture [432 x 514] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 5<br>1.0<br>4<br>0.8<br>3<br>0.6<br>2<br>0.4<br>1<br>0.2<br>TA=25oC TA=25oC,VG=10VA=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10<br>_ 0.2<br>0.1<br>0.05<br>1<br>300 µ s<br>0.02<br>1ms 0.1<br>0.01<br>10ms<br>0.1<br>100ms<br>Single Pulse<br>DC<br>Mounted on 1in2 pad<br>0.01 TA=25oC 0.01 R θ JA : 125 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> **==> picture [191 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=10VA=25oC,VG=10V=25oC,VG=10VoC,VG=10VC,VG=10VG=10V=10V<br>0<br>0 20 40 60 80 100 120 140 160<br> Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 4 **SM2630DSC** **®** ## **Typical Operating Characteristics ( Cont.)** ## **Output Characteristics** **==> picture [433 x 532] intentionally omitted <==** **----- Start of picture text -----**<br> Output Characteristics Drain-Source On Resistance<br>16 80<br>V GS =5,6,7,8,9,10V<br>14 4.5V 70<br>12<br>60<br>V =4.5V<br>GS<br>10<br>4V<br>50<br>8<br>40<br>6 V =10V<br>GS<br>3.5V 30<br>4<br>20<br>2<br>3V<br>2.5V<br>0 = 10<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>150 1.4<br>IDS=4A IDS=250 µ A<br>120 1.2<br>90 1.0<br>60 0.8<br>30 0.6<br>0 0.4<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON) Normalized Threshold Voltage<br>R<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 5 **SM2630DSC** **®** ## **Typical Operating Characteristics ( Cont.)** **==> picture [194 x 534] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source On Resistance<br>1.8<br>V =10V<br>GS<br> I =4A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 _ RON@Tj=25oC: 32m Ω<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Capacitance<br>350<br>Frequency=1MHz<br>300<br>250<br>Ciss<br>200<br>150<br>100<br>50 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> ## **Source-Drain Diode Forward** **==> picture [190 x 511] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br> VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V =15V<br>9 DS<br> I =4A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 6 **®** sinopower WA **SM2630DSC** ## **Avalanche Test Circuit and W aveform s** **==> picture [167 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [160 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br> ## **Sw it ching Tim e Test Circuit and W aveform s** **==> picture [166 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br> **==> picture [146 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 7 **SM2630DSC** **®** ## **Package I nform at ion** ## **SOT-23-6** **==> picture [447 x 474] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>e<br>SEE<br>VIEW A<br>b c<br>e1<br>GAUGE PLANE<br>S EATING PLANE<br>=a Eh L ,<br>VIEW A<br>SYMBO MILLIMETERS SOT-23-6 INCHES RECOMMENDED LAND PATTERN 0.63<br>L MIN. MAX. MIN. MAX.<br>A - 1.25 - 0.049<br>A1 0.00 0.05 0.000 0.002<br>A2 0.90 1.20 0.035 0.047<br>SSS b 0.30 0.50 0.012 0.020 ae,<br>c 0.08 0.22 0.003 0.009 2.4<br>D 2.70 3.10 0.106 0.122<br>E 2.60 3.00 0.102 0.118<br>E1 1.40 1.80 0.055 0.071 0.8<br>e 0.95 BSC 0.037 BSC<br>e1 1.90 BSC 0.075 BSC<br>L 0.30 0.60 0.012 0.024<br>0.95<br>0 0 ° 8 ° — 0 ° 8 ° Ppp UNIT: mm |<br>Note : 1. Follow JEDEC TO-178 AB.<br>0<br>E1 E<br>A2 A<br>0.25<br>A1<br>**----- End of picture text -----**<br> 2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 8 **®** ## **SM2630DSC** ## **Carrier Tape & Reel Dim ensions** **==> picture [315 x 348] intentionally omitted <==** **----- Start of picture text -----**<br> OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>ee Lr SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br> |**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**| |---|---|---|---|---|---|---|---|---| |**SOT-23-6**|178.0±2.00|2.00<br>50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20 1.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05| ||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**| ||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>3.20±0.20|3.10±0.20|1.50±0.20| _ww w.sinopowersem i.com_ 9 Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 **®** sinopower VAN **SM2630DSC** ## **Taping Direction I nform at ion** ## **SOT-23-6** **==> picture [260 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> USER DIRECTION OF FEED<br>AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX<br>**----- End of picture text -----**<br> ## **Classificat ion Profile** Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 10 **SM2630DSC** **®** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~———~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~——————~~ **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~Se~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright Sinopow er Sem iconductor, Inc. Rev. A.3 - August, 2014 _ww w.sinopowersem i.com_ 11
Updated at February 12, 2024
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