SM2612NSC

SM2612NSC, Single MOSFET, N Channel, 30V, SOT-23-6

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 30
Package: View
VGS (±V): 20
VTH(V) typ.: 1.8
ID (A) TA=25: 5.5
Rg (Ω) typ.: 3
Ciss (pF) typ.: 330
Coss (pF) typ.: 60
Crss (pF) typ.: 35
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 26.5
RON(mΩ max) 4.5V max.: 35
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
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SM261 2NSC ®<br>N-Channel Enhancement Mode MOSFET<br>PO<br>Features Pin Description<br>• 30V/5.5A,<br>S<br>RDS(ON)= 26.5m Ω (max.) @ VGS=10V DD G<br>RDS(ON)= 35m Ω (max.) @ VGS=4.5V D<br>. eA<br>D<br>• Reliable and Rugged<br>• Lead Free and Green Devices Available<br>Top View of SOT-23-6<br>(RoHS Compliant)<br>(1,2,5,6)<br>DD DD<br>Applications<br>• Power Management in Notebook Computer,<br>(3)G<br>Portable Equipment and Battery Powered<br>Systems.<br>• Load Switch. (4)S<br>**----- End of picture text -----**<br>


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• Load Switch. (4)S<br>N-Channel MOSFET<br>Ordering and Marking I nform ation<br>SM2612NS Package Code<br>     C : SOT-23-6<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>|<br>Temperature Range Handling Code<br>Package Code      TR : Tape & Reel (3000ea/reel)<br>Assembly Material<br>     G : Halogen and Lead Free Device<br>SM2612NS  C : C12XX XX - Lot Code<br>Sa<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

## **SM261 2NSC** 

## **®** sinopower MA 

## **Absolute Maxim um  Ratings** (TA = 25 ° C unless otherwise noted) 

|**Symbol**<br>~~a~~<br>~~Ce~~|**Parameter**<br>|**Parameter**<br>|**Rating**|**Unit**|
|---|---|---|---|---|
|**Common Ratings**<br>~~Ce———————~~|||||
|VDSS<br>~~Ce———————~~|Drain-Source Voltage<br>~~———————~~||30|V|
|VGSS<br>~~———————~~<br>~~a~~|Gate-Source Voltage<br>~~———————~~<br>~~ee~~||±20<br>~~ee~~||
|ID<br>~~———————~~<br>~~a~~<br>~~a~~|Continuous Drain Current<br>~~———————~~<br>~~ee~~<br>~~a~~|TA=25°C<br>~~———————~~<br>~~ee~~<br>~~a~~|5.5<br>~~ee~~<br>~~a~~|A<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~a~~|4.5<br>~~a~~<br>~~a~~||
|IDM<br>~~a~~|Continuous Drain Current|TA=25°C|22|A|
|IS<br>~~a—~~|Diode Continuous Forward Current<br>~~————~~||3<br>~~Ee~~|A<br>~~Ee~~|
|TJ<br>~~a—~~|Maximum Junction Temperature<br>~~————~~||150<br>~~Ee~~|°C<br>~~Ee~~|
|TSTG<br>~~—~~<br>~~a~~|Storage Temperature Range<br>~~————~~<br>~~ee~~||-55 to 150<br>~~Ee~~<br>~~ee~~||
|PD<br>~~—~~<br>~~ee~~<br>~~ee~~|Maximum Power Dissipation<br>~~————~~<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~— ~~<br>~~ee~~|1.1<br> ~~Ee~~<br>~~ee~~|W<br>~~Ee~~<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~a~~|0.7<br>~~ee~~<br>~~a~~||
|RθJA<br>c<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~ee~~|t≤10s<br>~~a~~<br>~~oo~~|70<br>~~a~~<br>~~oo~~|°C/W<br>~~oo~~|
|||Steady State<br>~~a~~<br>~~oo~~<br>~~ee~~|110<br>~~a~~<br>~~oo~~<br>~~ee~~||
|IAS<br>~~ee~~<br>~~a~~|Avalanche Current, Single pulse<br>~~ee~~<br>~~ee~~|L=0.5mH<br>~~a~~<br>~~ee~~|6<br>~~a~~<br>~~ee~~|A<br>~~ee~~|
|EAS<br>~~ee~~<br>~~a~~|Avalanche Energy, Single pulse<br>~~ee~~|L=0.5mH<br>~~a~~|9<br>~~a~~|mJ|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

## **SM261 2NSC** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25 ° C unless otherwise noted) 

|~~a~~|~~es~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~a~~<br>~~es~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||30<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~es~~|VDS=VGS, IDS=250µA||1.5|1.8|2.5|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current<br>~~es~~|VGS=±20V, VDS=0V||-|-|±10|uA|
|RDS(ON)<br>b <br>~~ee~~|Drain-Source On-state Resistance<br>~~es~~<br>~~ee~~|VGS=10V, IDS=5.5A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~|22<br>~~ee~~<br>~~ee~~|26.5<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=4.5A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~|28<br>~~ee~~<br>~~ee~~|35<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~ee~~<br>~~ee~~<br>~~PR~~||||||||
|VSD<br>b<br>~~PR~~<br>~~a~~|Diode Forward Voltage<br>|ISD=3A, VGS=0V<br><br>~~a~~||-<br><br>~~es~~|0.8<br><br>~~ee~~|1.3<br><br>~~ee~~|V<br><br>~~ee~~|
|trr<br>~~PRes~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~|ISD=5.5A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~ee~~||-<br>~~es~~<br>~~es~~<br>~~pt~~|4<br>~~es~~<br>~~ee~~<br>~~pt~~|-<br>~~es~~<br>~~ee~~<br>~~pt~~|ns<br>~~es~~<br>~~ee~~<br>~~pt~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~es~~<br>~~pt~~|8.5<br>~~es~~<br>~~ee~~<br>~~pt~~|-<br>~~es~~<br>~~ee~~<br>~~pt~~|nC<br>~~es~~<br>~~ee~~<br>~~pt~~|
|**Dynamic Characteristics**<br>c<br>~~a~~<br>~~es ee ee~~<br>~~a~~<br>~~ee~~<br>~~pt~~<br>~~a~~<br>~~ee~~<br>~~eeee~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~||-<br>~~ee~~<br>~~pf~~|3<br>~~pf~~|-<br>~~pf~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~ee ~~<br>~~ee~~||-<br> ~~ee~~<br>~~pf~~<br>~~P|~~|330<br>~~pf~~<br>~~P||~~|430<br>~~pf~~<br>~~|~~|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~|Output Capacitance<br>~~ee~~|||-<br>~~pf~~<br>~~P|~~<br>~~ptf~~|60<br>~~pf~~<br>~~P||~~<br>~~ptf~~|-<br>~~pf~~<br>~~|~~<br>~~ptf~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~P|~~<br>~~ptf~~<br>~~pf~~|35<br>~~P| |~~<br>~~ptf~~<br>~~pf~~|-<br>~~|~~<br>~~ptf~~<br>~~pf~~||
|td(ON)<br>~~es~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~||-<br>~~ptf~~<br>~~pf~~<br>~~pf~~|7.5<br>~~ptf~~<br>~~pf~~<br>~~pf~~|14<br>~~ptf~~<br>~~pf~~<br>~~pf~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~pf~~<br>~~pf~~<br>~~pf~~|10<br>~~pf~~<br>~~pf~~<br>~~pf~~|18<br>~~pf~~<br>~~pf~~<br>~~pf~~||
|td(OFF)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~pf~~<br>~~pf~~<br>~~Ft~~|15<br>~~pf~~<br>~~pf~~<br>~~Ft~~|27<br>~~pf~~<br>~~pf~~<br>~~Ft~~||
|tf<br>~~a~~<br>~~ee~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~<br>~~a~~|||-<br>~~pf~~<br>~~Ft~~|4<br>~~pf~~<br>~~Ft~~|7.2<br>~~pf~~<br>~~Ft~~||
|**Gate Charge Characteristics**<br>c<br>~~ee~~<br>~~Ft~~<br>~~a~~<br>~~ee~~<br>~~|~~<br>~~||~~||||||||
|Qg<br>~~a~~<br>~~ee~~<br>~~ee~~|Total Gate Charge<br>~~a~~|VDS=15V, VGS=10V,<br>IDS=5.5A<br>~~|~~<br>~~**|**~~||-<br>~~|~~<br>~~|~~<br>~~pt~~|7<br>~~|~~<br>~~pt~~|10<br>~~|~~<br>~~pt~~||
|Qgs<br>~~ee~~<br>~~ee~~<br>~~es~~|Gate-Source Charge<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~pt~~<br>~~**|**~~|1.2<br>~~|~~<br>~~pt~~|-<br>~~|~~<br>~~pt~~||
|Qgd<br>~~ee~~<br>~~es~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~pt~~<br>~~**|**~~|1.7<br>~~pt~~|-<br>~~pt~~||



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

**SM261 2NSC** 

**®** 

## **Typical Operating Characteristics** 

## **Power Dissipation** 

## **Drain Current** 

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1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>T =25oC<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>50<br>10<br>1 300 µ s<br>1ms<br>10ms<br>0.1<br>100ms<br>1s<br>DC<br>0.01 TA=25oC<br>0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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6<br>5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Thermal Transient Impedance** 

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2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.1<br>0.01<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01 R θ JA : 110 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**SM261 2NSC** 

**®** 

## **Typical Operating Characteristics ( Cont.)** 

## **Output Characteristics** 

## **Drain-Source On Resistance** 

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21 45<br>V GS =4,5,6,7,8,9,10V<br>18 40<br>3.5V<br>15 35<br>V =4.5V<br>GS<br>12 30<br>9 25<br>V =10V<br>GS<br>3V<br>6 20<br>3 15<br>2.5V<br>0 10<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>[a]<br>)<br>Ω<br>- Drain Current (A)<br>ID   - On - Resistance (mDS(ON)<br>R<br>**----- End of picture text -----**<br>


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70<br>I =5.5A<br>DS<br>60<br>50<br>40<br>30<br>20<br>10<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.6<br>I DS =250 µ A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM261 2NSC** 

**®** 

## **Typical Operating Characteristics ( Cont.)** 

## **Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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2.5<br>V  = 10V<br>GS<br> I  = 5.5A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 22m Ω<br>0.0 =<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>480<br>Frequency=1MHz<br>420<br>360<br>Ciss<br>300<br>240<br>180<br>120<br>Crss Coss<br>60<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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20<br>10<br>T =150oC<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V  =10V<br>9 DS<br> I  =5.5A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

**SM261 2NSC** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L VDSX(SUS)<br>tp<br>DUT VDS<br>IAS<br>RG<br>VDD<br>tp IL VDD EAS<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>;<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**®** 

## **SM261 2NSC** 

## **Package I nform at ion** 

## **SOT-23-6** 

||||||||||||||||D|D|D||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||||||||||||||||e||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||SEE|||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||VIEW A|||||VIEW A||||||||||||||||||||||||||
||||||||||||||||||||||||||||||E1|||E|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
||||||0<br>L<br>0.25<br>GAUGE PLANE<br>~~S~~EATING PLANE<br>A<br>A2<br>A1<br>b<br>c<br>e1<br>~~-ae~~||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||||||||||||||||||||||||||||||||||||||||||||VIEW A|||||||||VIEW A||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||**SYM**<br>**BO**<br>**L**|||**MILLIMETERS**<br>**MIN.**<br>**MAX.**|||||||||||||||||||||**SOT-23-6**<br>**MIN.**|||||||||**INCHES**|||||**MAX.**||||||||||||||||**RECOMMENDED LAND PATTERN**||||||||||||||||||||**RECOMMENDED LAND PATTERN**<br>0.63|||||||||||||||
|||A|||-||||||||||||||1.25|||||||||||||-||||||||0.049|||||||||||||||||||||||||||||||||||||||||||||||||||
||A1||||0.00||||||||||||||0.05|||||||||||||0.000||||||||0.002|||||||||||||||||||||||||||||||||||||||||||||||||||
||A2||||0.90||||||||||||||1.20|||||||||||||0.035||||||||0.047|||||||||||||||||||||||||||||||||||||||||||||||||||
|||b|||0.30||||||||||||||0.50|||||||||||||0.012||||||||0.020|||||||||||||||||||||||||||||||||||||||||||||||||||
|||c|||0.08||||||||||||||0.22|||||||||||||0.003||||||||0.009||||||||||||||||||||||||||||||||||||||||||||||||2.4|||
||L<br>~~0~~<br>E<br>e<br>e1<br>E1<br>D||||0°<br>0.30<br>1.40<br>2.60<br>2.70|||0.95 BSC<br>1.90 BSC|||||0.95 BSC<br>1.90 BSC||||||8°<br>0.60<br>3.00<br>1.80<br>3.10|||||||||||||0°<br>0.012<br>0.075 BSC<br>0.037 BSC<br>0.102<br>0.055<br>0.106||||||||8°<br>0.024<br>0.118<br>0.071<br>0.122||||||||||||||||UNIT: mm<br>0.8<br>0.95<br>~~poe~~|||||||||||||||||||||||||||||||||||
|Note : 1. Follow JEDEC TO-178 AB.||||Note : 1. Follow JEDEC TO-178 AB.||||||||||Note : 1. Follow JEDEC TO-178 AB.|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||



2. Dimension D and E1 do not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil per side. 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

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sinopower **®** WA 

## **SM261 2NSC** 

## **Carrier Tape & Reel Dim ensions** 

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Le OD0 P0 fe P2 P1 ele A |<br>Faeacy<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23-6**|178.0±2.00|2.00<br>50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|1.0 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>3.20±0.20|3.10±0.20|1.50±0.20|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

**®** sinopower VN 

**SM261 2NSC** 

## **Taping Direction I nform at ion** 

## **SOT-23-6** 

**==> picture [260 x 71] intentionally omitted <==**

**----- Start of picture text -----**<br>
USER DIRECTION OF FEED<br>AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX AAAXX<br>**----- End of picture text -----**<br>


## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014 

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**SM261 2NSC** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=sS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~——=————~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~S—————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C 

## **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.2 - August, 2014
Updated at February 12, 2024
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