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SM2604NSC
SM2604NSC, Single MOSFET, N Channel, 30V, TSOT-23-6
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- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: N
- BV(V): 30
- Package: View
- VGS (±V): 20
- VTH(V) typ.: 1.8
- ID (A) TA=25: 7.4
- Rg (Ω) max.: 2.5
- Rg (Ω) typ.: 1.5
- Ciss (pF) typ.: 410
- Coss (pF) typ.: 73
- Crss (pF) typ.: 42
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 24
- RON(mΩ max) 4.5V max.: 32.5
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**®** wer v/ **SM2604NSC** - N-Channel Enhancement Mode MOSFET - ~~co~~ ## **Features** ## **Pin Description** - 30V/7.4A, - RDS(ON)= 24mΩ(max.) @ VGS=10V - RDS(ON)= 32.5mΩ(max.) @ VGS=4.5V - Reliable and Rugged - Lead Free and Green Devices Available (RoHS Compliant) ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. - Load Switch. **==> picture [56 x 51] intentionally omitted <==** **----- Start of picture text -----**<br> S<br>D 4<br>D 5<br>6 3<br>2 G<br>. 1 D<br>D<br>**----- End of picture text -----**<br> Top View of TSOT-23-6 **==> picture [70 x 134] intentionally omitted <==** **----- Start of picture text -----**<br> (1,2,5,6)<br>D D D D<br>(3)G<br>—<br>(4)S<br>**----- End of picture text -----**<br> N-Channel MOSFET ## **Ordering and Marking Information** **==> picture [416 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> SM2604NS Package Code<br> C : TSOT-23-6<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Temperature Range Handling Code<br>Package Code TR : Tape & Reel<br>Assembly Material<br> G : Halogen and Lead Free Device<br>SM2604NS C : C04XX XX - Lot Code<br>**----- End of picture text -----**<br> Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. _www.sinopowersemi.com_ 1 Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 ## **SM2604NSC** ## **®** sinopower MA **Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) **==> picture [468 x 255] intentionally omitted <==** **----- Start of picture text -----**<br> a Symbol a Parameter Rating Unit<br>OO Common Ratings<br>— VDSS Drain-Source Voltage 30<br>V<br>a VGSS Gate-Source Voltage ±20<br>TJ Maximum Junction Temperature 150<br>°C<br>a TSTG Storage Temperature Range -55 to 150<br>ee<br>IS Diode Continuous Forward Current TA=25°C 1<br>a<br>ID Continuous Drain Current TA=25°C 7.4 A<br>TA=70°C 5.9<br>a<br>ee IDM ee Pulsed Drain Current TA=25°C 29<br>ee ee<br>TA=25°C 2<br>PD Maximum Power Dissipation W<br>TA=70°C 1.28<br>ee<br>es ee<br>t ≤ 10s 62.5<br>RθJA Thermal Resistance-Junction to Ambient<br>[Ee Steady State 110 °C/W<br>a RθJL Thermal Resistance-Junction to Lead ee Steady State ee 68<br>**----- End of picture text -----**<br> Note a：Pulse width limited by max. junction temperature. 2 Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ **®** sinopower WN ## **SM2604NSC** ## **Electrical Characteristics** (TA = 25°C unless otherwise noted) |~~ee~~|||||||| |---|---|---|---|---|---|---|---| |**Symbol**<br>~~ee~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>| |**Static Characteristics**<br>~~eeCn~~|||||||| |BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V,IDS=250µA<br>~~a~~<br>~~ee~~<br>~~ee~~||30<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|-<br>~~a~~|V<br>~~a~~| |IDSS<br>~~a~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~<br>~~a~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~ee~~<br>~~a~~||-<br>~~a~~<br>~~a~~<br>~~ee~~<br>|-<br>~~a~~<br>~~a~~<br>~~ee~~<br>~~a~~|1<br>~~a~~<br>~~a~~<br>~~a~~|µA<br>~~a~~<br>~~a~~<br>~~a~~| ||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~<br>~~ee~~<br>~~aa~~|30<br>~~a~~<br>~~aa~~|| |VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~a~~|VDS=VGS,IDS=250µA<br>~~ee~~<br>~~ee~~<br><br>~~a~~||1.3<br>~~ee~~<br><br>~~a~~|1.8<br>~~ee~~<br>~~a~~<br>~~a~~|2.5<br>~~a~~|V<br>~~a~~| |IGSS<br>~~a~~|Gate Leakage Current<br>~~a~~<br>~~es~~|VGS=±20V, VDS=0V<br>~~a~~<br>~~es~~||-<br>~~a~~<br>~~es~~|-<br>~~a~~<br>~~es~~|±100<br>~~es~~|nA<br>~~es~~| |RDS(ON)<br>b<br>~~a~~<br>~~a~~|Drain-Source On-state Resistance<br>~~a~~<br>~~es~~|VGS=10V, IDS=8A<br>~~a~~<br>~~es~~<br>~~ee~~||-<br>~~a~~<br>~~es~~<br>~~ee~~|20<br>~~a~~<br>~~es~~<br>~~ee~~<br>~~ee~~|24<br>~~es~~<br>~~ee~~<br>~~ee~~|mΩ<br>~~es~~<br>~~ee~~| |||VGS=4.5V, IDS=5A<br>~~ee~~||-<br>~~ee~~|25<br>~~ee~~<br>~~ee~~|32.5<br>~~ee~~<br>~~ee~~|| |**Diode Characteristics**<br>~~a~~<br>~~ee~~<br>~~ee ee~~<br>~~Cn~~|||||||| |VSD<br>b<br>~~Cn~~<br>~~a~~|Diode Forward Voltage<br>~~Cn~~<br>|ISD=1A, VGS=0V<br>~~Cn~~||-<br>~~Cn~~|0.75<br>~~Cn~~|1.1<br>~~Cn~~|V<br>~~Cn~~| |trr<br>c<br>~~Sf~~<br>~~a~~|Reverse RecoveryTime<br>~~Sf~~<br>~~ee~~|ISD=8A, dlSD/dt=100A/µs<br>~~ee~~<br>~~—~~||-<br>~~—~~<br>~~|~~|14<br>~~ft~~|-<br>~~ft~~|ns| |Qrr<br>c<br>~~a~~|Reverse RecoveryCharge<br>~~ee~~|||-<br>~~—~~<br>~~|~~|4.5<br>~~ft~~|-<br>~~ft~~|nC| |**Dynamic Characteristics**<br>c<br>~~a~~<br>~~ee~~<br>~~—~~<br>~~|~~<br>~~ft~~<br>~~Ce~~<br>~~a~~<br>~~eeee~~|||||||| |RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~<br>~~ft~~||1<br>~~ft~~|1.5<br>~~ft~~|2.5<br>~~ft~~|Ω| |Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~ee ~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br> ~~ee~~<br>~~ft~~<br>~~—~~<br>~~Ff~~<br>~~ot~~||320<br>~~ft~~<br>~~—~~|410<br>~~ft~~|500<br>~~ft~~|pF| |Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance|||48<br>~~ft~~<br>~~—~~<br>~~Ff~~|73<br>~~ft~~<br>~~Ff~~|98<br>~~ft~~<br>~~Ff~~|| |Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance|||25<br>~~—~~<br>~~Ff~~<br>~~ot~~|42<br>~~Ff~~<br>~~ot~~|60<br>~~Ff~~<br>~~ot~~|| |td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on DelayTime<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~Ff~~<br>~~ot~~<br>~~ee~~<br>~~of~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~Ff~~<br>~~ot~~<br>~~of~~|6.8<br>~~Ff~~<br>~~ot~~<br>~~of~~|-<br>~~Ff~~<br>~~ot~~<br>~~of~~|ns| |tr<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~|||-<br>~~ot~~<br>~~of~~<br>~~|~~|10<br>~~ot~~<br>~~of~~<br>~~|~~|-<br>~~ot~~<br>~~of~~<br>~~|~~|| |td(OFF)<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-off DelayTime<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~of~~<br>~~|~~<br>~~|~~|15<br>~~of~~<br>~~|~~<br>~~|~~|-<br>~~of~~<br>~~|~~<br>~~|~~|| |tf<br>~~a~~<br>~~ee~~<br>~~Cn~~|Turn-off Fall Time<br>~~ee~~<br>~~ee~~<br>~~Cn~~|||-<br>~~|~~<br>~~|~~|3.6<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|| |**Gate Charge Characteristics**<br>c<br>~~ee~~<br>~~|~~<br>~~Cn~~|||||||| |Qg<br>~~Cn~~<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~Cn~~<br>~~ee~~<br>|VDS=15V, VGS=4.5V,<br>IDS=8A<br>~~|~~||-<br>~~|~~|4<br>~~|~~<br>~~ft~~|7<br>~~|~~<br>~~ft~~|nC| |Qg<br>~~a~~<br>~~ee ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=15V, VGS=10V,<br>IDS=8A<br>~~|~~<br>~~of~~<br>~~ee~~<br>~~|~~<br>~~i~~||-<br>~~|~~<br>~~of~~|8.2<br>~~|~~<br>~~ft~~<br>~~of~~|11.5<br>~~|~~<br>~~ft~~<br>~~of~~|| |Qgth<br>~~a~~<br>~~ee ee~~<br>~~a~~<br>~~ee~~|Threshold Gate Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|||-<br>~~|~~<br>~~of~~<br>~~|~~|0.8<br>~~|~~<br>~~ft~~<br>~~of~~<br>~~|~~|1.2<br>~~|~~<br>~~ft~~<br>~~of~~<br>~~|~~|| |Qgs<br>~~ee ee~~<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~of~~<br>~~|~~<br>~~i~~|1.65<br>~~ft~~<br>~~of~~<br>~~|~~<br>~~i~~<br>~~ft~~|2.3<br>~~ft~~<br>~~of~~<br>~~|~~<br>~~ft~~|| |Qgd<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~|~~<br>~~i~~|1.55<br>~~|~~<br>~~i~~<br>~~ft~~|2.1<br>~~|~~<br>~~ft~~|| 3 Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ **®** ## **SM2604NSC** ## **Typical Operating Characteristics** ## **Power Dissipation** ## **Drain Current** **==> picture [435 x 511] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5 8<br>2.0<br>6<br>1.5<br>4<br>1.0<br>2<br>0.5<br>TA=25oC TA=25oC,VG=10V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>TA - Ambient Temperature (°C) TA - Ambient Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 2<br>1 Duty = 0.5<br>10 0.2<br>0.1<br>300µs<br>0.05<br>1 1ms<br>0.1 0.02<br>10ms<br>0.01<br>100ms<br>0.1 1s<br>DC Single Pulse<br>Mounted on 1in2 pad<br>0.01 A TA=25oC 0.01 RθJA : 62.5 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ 4 **®** ## **SM2604NSC** ## **Typical Operating Characteristics (Cont.)** **Output Characteristics** ## **Drain-Source On Resistance** **==> picture [193 x 198] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>VGS=4,5,6,7,8,9,10V<br>12<br>3.5V<br>9<br>6<br>3V<br>3<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **==> picture [120 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> VDS - Drain-Source Voltage (V)<br>**----- End of picture text -----**<br> ## **Gate-Source On Resistance** **==> picture [193 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 60<br>I =8A<br>DS<br>50<br>40<br>30<br>20<br>10<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [192 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>V =4.5V<br>GS<br>25<br>V =10V<br>20 GS<br>15<br>10<br>0 3 6 9 12 15<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [195 x 226] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ 5 **®** ## **SM2604NSC** ## **Typical Operating Characteristics (Cont.)** ## **Drain-Source On Resistance** ## **Source-Drain Diode Forward** **==> picture [436 x 507] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8<br>V = 10V<br>GS 10<br>1.6 IDS = 8A<br>1.4 T =150 o C<br>j<br>1.2<br>1.0 T =25oC<br>1 j<br>0.8<br>0.6<br>0.4<br>0.2 a RON@Tj=25 o C: 20mΩ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>550 10<br>Frequency=1MHz V DS = 10V<br>500 9 I = 8A<br>DS<br>450<br>8<br>Ciss<br>400<br>7<br>350<br>6<br>300<br>5<br>250<br>4<br>200<br>3<br>150<br>2<br>100 Coss<br>Crss<br>50 1<br>0 0<br>0 5 10 15 20 25 30 0 2 4 6 8 10<br>VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 6 _www.sinopowersemi.com_ **®** sinopower WN ## **SM2604NSC** ## **Avalanche Test Circuit and Waveforms** **==> picture [167 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [160 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> tp VDSX(SUS)<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br> ## **Switching Time Test Circuit and Waveforms** **==> picture [166 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>;<br>tp<br>**----- End of picture text -----**<br> **==> picture [146 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ 7 **®** sinopower MA ## **SM2604NSC** ## **Disclaimer** Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to develop high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 8 Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_ **®** sinopower VN **SM2604NSC** ## **Classification Profile** Copyright Sinopower Semiconductor Inc. 9 Rev. A.6 - December, 2022 _www.sinopowersemi.com_ **®** ## **SM2604NSC** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=sS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———$———~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** ## **Sinopower Semiconductor Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 300096, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080 10 Copyright Sinopower Semiconductor Inc. Rev. A.6 - December, 2022 _www.sinopowersemi.com_
Updated at February 12, 2024
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