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SM2501NSU
SM2501NSU, Single MOSFET, N Channel, 25V, TO-252-2
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- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: N
- BV(V): 25
- Package: View
- 2.5V max.: 7.5
- VGS (±V): 12
- VTH(V) typ.: 0.75
- ID (A) TA=25: 18
- ID (A) TC=25: 60
- Rg (Ω) max.: 5
- Rg (Ω) typ.: 2.5
- Ciss (pF) typ.: 2450
- Coss (pF) typ.: 270
- Crss (pF) typ.: 190
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 5
- RON(mΩ max) 4.5V max.: 6
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
A **®**
## **SM2501NSU**
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®<br> N-Channel Enhancement Mode MOSFET<br>ee<br>Features Pin Description<br>• 25V/60A, Drain 4<br> RDS(ON)= 5mΩ (Max.) @ VGS=10V 3 Source<br> RDS(ON)= 6mΩ (Max.) @ VGS=4.5V 2<br> RDS(ON)= 7.5mΩ (Max.) @ VGS=2.5V . 1 Gate<br>• Reliable and Rugged<br>Top View of TO-252-3<br>• Lead Free and Green Devices Available<br>D<br>**----- End of picture text -----**<br>
- Lead Free and Green Devices Available (RoHS Compliant)
## **Applications**
- Power Motor Controls.
- High Frequency Isolated DC-DC Converters with
- Synchronous Rectification for Industrial.
- Load Switching.
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G<br>S<br>**----- End of picture text -----**<br>
N-Channel MOSFET
## **Ordering and Marking Information**
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SM2501NS Package Code<br> U : TO-252-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Handling Code<br>Temperature Range<br> TR : Tape & Reel (2500ea/reel)<br>Package Code<br>Assembly Material<br> G : Halogen and Lead Free Device<br>SM2501NS U : SM2501N XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
## **SM2501NSU**
## **®** sinopower WN
## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>|||||
|VDSS<br>~~SS~~|Drain-Source Voltage<br>~~SS~~||25<br>~~SS~~|V<br>~~SS~~|
|VGSS<br>~~SS~~<br>~~a~~<br>~~Pe~~|Gate-Source Voltage<br>~~SS~~||±12<br>~~SS~~||
|TJ<br>~~SS~~<br>~~a~~<br>~~Pe~~<br>~~Ps~~|Maximum Junction Temperature<br>~~SS~~<br>||150<br>~~SS~~<br>|°C<br>~~SS~~<br>|
|TSTG<br>~~Pe~~<br>~~Ps~~|Storage Temperature Range<br>||-55 to 150<br>|°C<br>|
|IS<br>~~PsPR~~<br>~~a~~|Diode Continuous Forward Current<br>~~PR~~|TC=25°C<br>~~PR~~|20<br>~~PR~~<br>~~el~~|A<br>~~PR~~<br>~~el~~|
|ID<br>~~a~~|Continuous Drain Current|TC=25°C|60*<br>~~el~~|A<br>~~el~~|
|||TC=100°C<br>~~|~~|40<br>~~el~~||
|IDM<br>a<br>~~a~~<br>~~a~~|Pulse Drain Current Tested<br>|TC=25°C<br>|160<br>~~el~~<br>|A<br>~~el~~<br>|
|PD<br>~~ee~~|Maximum Power Dissipation<br>~~ee~~|TC=25°C<br>~~ee~~|50<br>~~ee~~|W<br>~~ee~~|
|||TC=100°C<br>~~ee~~<br>~~|~~|20<br>~~ee~~||
|RθJC<br>~~aee~~|Thermal Resistance-Junction to Case<br>~~ee~~|Steady State<br>~~ee~~|2.5<br>~~ee~~|°C/W<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~|18<br>~~ee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~|~~|15<br>~~ee~~||
|PD<br>~~ee~~<br>~~2~~<br>~~ae~~|Maximum Power Dissipation<br>~~ee ~~<br>~~—~~<br>~~ae reel~~|TA=25°C<br> ~~ee~~<br>~~—~~|2.5<br>~~ee~~<br>~~—~~|W<br>~~ee~~<br>~~—~~<br>~~reel~~|
|||TA=70°C<br>~~—~~<br>~~|~~<br>~~reel~~|1.6<br>~~—~~<br>~~reel~~||
|RθJA<br>~~ae~~|Thermal Resistance-Junction to Ambient<br>~~ae reel~~|t≤10s<br>~~reel~~|20<br>~~reel~~|°C/W<br>~~reel~~|
|||Steady State<br>~~reel~~<br>~~|~~|50<br>~~reel~~||
|IAS<br>b<br>~~ae~~<br>~~a~~|Avalanche Current, Single pulse<br>~~ae reel~~|L=0.5mH<br>~~reel~~|19<br>~~reel~~|A<br>~~reel~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|90|mJ|
Note a：*Current is limited by bond wire. Note b：UIS tested and pulse width are limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C).
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
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## **SM2501NSU**
## **®** sinopower WN
**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~Pe~~|**Parameter**<br>~~Pe~~|**Test Conditions**<br>~~Pe~~|**Test Conditions**<br>~~Pe~~|**Min.**<br>~~Pe~~|**Typ.**<br>~~Pe~~|**Max.**<br>~~Pe~~|**Unit**<br>~~Pe~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Pe~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>~~a~~|VGS=0V, IDS=250µA<br>~~a~~<br>~~ee~~||25<br>~~a~~<br>~~ee~~|-<br>~~a~~|-<br>~~a~~|V<br>~~a~~|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=20V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS,IDS=250µA<br>~~ee~~||0.5<br>~~ee~~|0.75|1|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current|VGS=±12V, VDS=0V<br>~~ee~~||-<br>~~ee~~|-|±100|nA|
|RDS(ON)<br>c <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=25A<br>TJ=125°C<br>~~ee~~<br>~~ff~~||-<br>~~ee~~|4.2|5|mΩ<br>~~ee~~<br>~~ee~~|
||||TJ=125°C<br>~~ee~~<br>~~ff~~|-<br>~~ee~~<br>~~ff~~<br>~~ee~~|6<br>~~ff~~<br>~~ee~~|-<br>~~ff~~<br>~~ee~~||
|||VGS=4.5V, IDS=20A<br>~~ee~~<br>~~ff~~<br>~~ee~~||-<br>~~ee~~<br>~~ff~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|4.7<br>~~ff~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|6<br>~~ff~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=2.5V, IDS=6A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~|5.5<br>~~ee~~<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|7.5<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~ee ee ee~~||||||||
|VSD<br>c<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=10A, VGS=0V<br>~~a~~||-<br>~~a~~<br>~~**f**t~~|0.7<br>~~a~~<br>~~t|~~|1.1<br>~~a~~<br>~~|~~|V<br>~~a~~|
|trr<br>~~a~~<br>~~a~~|Reverse RecoveryTime<br>~~a~~|IDS=20A, dlSD/dt=100A/µs<br>~~a~~||-<br>~~a~~<br>~~**f**t~~|16<br>~~a~~<br>~~t|~~|-<br>~~a~~<br>~~|~~|ns<br>~~a~~<br>~~tf~~|
|ta<br>~~a~~|Charge Time|||-<br>~~**f**t~~|9.2<br>~~t |~~<br>~~t~~|-<br>~~|~~<br>~~t~~||
|tb<br>~~a~~<br>~~a~~|Discharge Time|||-<br>~~ft~~<br>~~ft~~|7<br>~~ft~~<br>~~fttf~~|-<br>~~ft~~<br>~~tf~~||
|Qrr<br>~~a~~|Reverse RecoveryCharge|||-<br>~~ft~~|7.5<br>~~fttf~~|-<br>~~tf~~|nC<br>~~tf~~|
|**Dynamic Characteristics**<br>d<br>~~a~~<br>~~ft tf~~||||||||
|RG<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,F=1MHz||-|2.5|5|Ω|
|Ciss<br>~~a~~|Input Capacitance|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz||-<br>~~ft~~|2450<br>~~ft~~|-<br>~~ft~~|pF|
|Coss<br>~~a~~|Output Capacitance|||-<br>~~ft~~|270<br>~~ft~~|-<br>~~ft~~||
|Crss<br>~~a~~|Reverse Transfer Capacitance|||-<br>~~ef~~|190<br>~~ef~~|-<br>~~ef~~||
|td(ON)<br>~~a~~|Turn-on DelayTime|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω||-<br>~~et~~|13<br>~~et~~|-<br>~~et~~|ns|
|tr<br>~~a~~<br>~~a~~|Turn-on Rise Time|||-<br>~~et~~<br>~~ft~~|11.6<br>~~et~~<br>~~ft|~~|-<br>~~et~~<br>~~|~~||
|td(OFF)<br>~~a~~|Turn-off DelayTime|||-<br>~~ft~~|85<br>~~ft|~~|-<br>~~|~~||
|tf<br>~~a~~<br>~~a~~|Turn-off Fall Time|||-<br>~~ft~~<br>~~ft]~~|42<br>~~ft |~~<br>~~ft]~~|-<br>~~|~~<br>~~ft]~~||
|**Gate Charge Characteristics**<br>d||||||||
|Qg<br>~~a~~|Total Gate Charge|VDS=15V, VGS=4.5V,<br>IDS=25A||-<br>~~ft~~|23<br>~~ft|~~|-<br>~~|~~|nC|
|Qg<br>~~a~~|Total Gate Charge|VDS=15V, VGS=10V,<br>IDS=25A||-<br>~~ft~~|50<br>~~ft|~~|-<br>~~|~~||
|Qgth<br>~~a~~<br>~~a~~|Threshold Gate Charge|||-<br>~~ft~~<br>~~ft~~|1.25<br>~~ft |~~<br>~~ft~~|-<br>~~|~~<br>~~ft~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge|||-<br>~~ft~~<br>~~ft~~|2.8<br>~~ft~~<br>~~ftft~~|-<br>~~ft~~<br>~~ft~~||
|Qgd<br>~~a~~|Gate-Drain Charge|||-<br>~~ft~~|8.2<br>~~ftft~~|-<br>~~ft~~||
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
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**®** sinopower WN
## **SM2501NSU**
## **Typical Operating Characteristics**
**Power Dissipation**
**Drain Current**
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60 70<br>50 SEEPS 60 COC<br>TNT\ CECERSE<br>50<br>40 PL LENEEEL ELLE LEE FOCEECOCCINRCC NCLEEE<br>PTEEEN TET TT 40 FCOECELOENEETEE<br>30<br>LEE TING EET PCEEEETTTEN FT<br>POCCCEONEE 30 FOEEEEEEEEEN<br>20 TEE TT<br>TEE E EN EE EEE 20 St Ne<br>SH IN CCEEECECEEE<br>10<br>TTT TT PINT 10 FCCC<br>T C =25oC T C =25oC,V G =10V<br>0 _oaeeeNtPETE EE EE EEN 0 SASAARSSERP E RE E LE<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature<br>Safe Operation Area Thermal Transient Impedance<br>500 3<br>LC I TET ETT<br>1 Duty = 0.5<br>100µs 0.2<br>100<br>So AT 0.1 SUee 0.1 |<br>0.05<br>0.02<br>0.01<br>1ms 0.01<br>10 a SE UA Ss<br>A er oi TTT YF<br>aiiieeetatiieeeeth Caio 10ms 1E-3 Bi 0AT<br>DC<br>TC=25oC Single Pulse RθJC :2.5 o C/W<br>1 CLT LTE AL 1E-4 iuLMM.<br>0.01 0.1 1 10 100 300 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
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**®** sinopower WN
## **SM2501NSU**
## **Typical Operating Characteristics (Cont.)**
**Output Characteristics**
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160<br>V GS = 3,4,5,6,7,8,9,10V<br>140<br>120<br>100 2V<br>80<br>60<br>40<br>1.5V<br>20<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VDS - Drain - Source Voltage (V)<br>Gate-Source On Resistance<br>20<br>I =25A<br>DS<br>WLLL<br>16 MELEE<br>WELLE<br>12<br>WELLL<br>WELLL<br>8<br>NET TT<br>EEE<br>~~<br>4<br>hee<br>PULL<br>0 PULLELL ELE LE<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>
**Drain-Source On Resistance**
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12<br>10<br>8<br>V =2.5V<br>GS V =4.5V<br>GS<br>6<br>4<br>V =10V<br>GS<br>2<br>0<br>0 30 60 90 120 150<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4 tho ffe<br>POC<br>1.2<br>we<br>1.00.8 PSECCHES<br>FECES RE<br>0.60.4 POCOPRE<br>PEE<br>0.2 PACD<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
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**®** sinopower »yN
## **SM2501NSU**
## **Typical Operating Characteristics (Cont.)**
## **Drain-Source On Resistance**
## **Source-Drain Diode Forward**
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2.0<br>V = 10V<br>GS 100<br>1.8 I = 25A<br>DS<br>| SeaeSnaEE a<br>1.6<br>1.4 SeUUUEEEEEEE! ff T =150oC<br>10 j<br>1.2 o<br>T =25 C<br>j<br>1.0<br>AZO FEE<br>0.8<br>1<br>0.6<br>EERE: SSSS<br>0.4<br>0.2 corranne R ON @T j =25 o C: 4.2mΩ 0.1 TAIic Scce<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>**----- End of picture text -----**<br>
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Capacitance<br>3500<br>Frequency=1MHz<br>3000<br>2500 Ciss i<br>2000<br>1500<br>1000<br>500<br>Coss<br>Crss<br>0<br>0 5 10 15 20 25<br>VDS - Drain-Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>
**Gate Charge**
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10<br>V = 15V | | | | Jf<br>9 DS<br> I = 25A<br>DS | | |Jf<br>8 SCHERER<br>Lr | [| | [| [|| | [Sf| yY<br>7 cr {| | | | | ft |<br>a<br>6 crFt| |fT || hE| lcvT| feYl|<br>5<br>ee<br>4 ire| | [A |Ae| ft<br>3 Lrrf| [|[fAYi| [|| || [|<br>2 LpeeeZ<br>‘Pio | | ft| |ttlmdT lc<br>1 pit| [ [ | [|<br>pit| ft ft ft fy<br>0 Pete| [ [ | ft<br>0 10 20 30 40 50<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**®** sinopower NX.
**SM2501NSU**
## **Avalanche Test Circuit and Waveforms**
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VDS VDSX(SUS)<br>L tp<br>VDS<br>DUT<br>J IAS on<br>RG<br>VDD<br>VDD<br>EAS<br>tp IL<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>
## **Switching Time Test Circuit and Waveforms**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>se<br>**----- End of picture text -----**<br>
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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
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**®** sinopower WN
**SM2501NSU**
## **Package Information**
## **TO-252-3**
|||L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|L3<br>E<br>b3<br>~~an~~<br>~~le~~|||A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~|A<br>c2<br>~~pt~~<br>~~TT~~||||||||E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|E1<br>~~—_~~|||||||||||
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|||b<br>~~te~~|||||||e||||||SEE VIEW A<br>~~c~~<br>~~alte~~|||||||||||||||||||||||||||||||||
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||||||||||||||GAUGE PLANE|||||||0||||||||||||||SEATING PLANE||||||||||||||
||||||||||||||||||0.25||||||L<br>VIEW A||||VIEW A|||A1||||||||||||||||||
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||**SYM**<br>**BO**<br>**L**<br>~~—~~|**MIN.**<br>**MAX.**<br>**MILLIMETERS**|||||||||**TO-252-3**<br>**MIN.**<br>**INCHES**|||||||||**MAX.**|||||||**RECOMMENDED LAND PATTERN**<br>6.25 MIN.<br>~~_~~|||||||||||||||||||||
||4.95<br>A<br>A1<br>b3<br>b<br>0.50<br>2.18<br>~~ff~~<br>~~ee~~||||||||2.39<br>5.46<br>0.13<br>0.89||||0.020<br>0.195<br>0.086|||||||0.094<br>0.035<br>0.215<br>0.005||||||||LS,<br> ~~L~~LEEEI||||||||||||||||||6.8 MIN.|6.8 MIN.|
||c|0.46|||||||0.61||||0.018|||||||0.024||||||||||||||||||||||||||||
||c2<br>D<br>~~i~~|5.33<br>0.46|||||||6.22<br>0.89||||0.210<br>0.018|||||||0.245<br>0.035|||||||6.6|||Z||||||||||||~~Ly~~||||||
|D1<br>E<br>2.29 BSC<br>4.57<br>6.35<br>6.73<br>0.090 BSC<br>0.180<br>0.250<br>E1<br>L3<br>H<br>L<br>e<br>9.40<br>0.90<br>1.78<br>10.41<br>0.370<br>0.035<br>L4<br>1.02<br>0.150<br>3.81<br>0.89<br>2.03<br>0.035<br>~~0~~<br>8°<br>0°<br>0°<br>6.00<br>6.00<br>~~—~~<br>~~ne~~<br>~~r_~~<br>~~nei~~<br>~~es~~<br>~~neod~~|||||||||||||||||0.090 BSC<br>0.265<br>0.070<br>0.410<br>0.040<br>0.080<br>8°<br>0.236<br>0.236|||||||||=|||||UNIT: mm<br>3 MIN.<br>1.5 MIN.<br>2.286<br>4.572<br>~~ot~~<br>~~Zo~~<br>~~y~~<br>~~_~~<br>~~>t~~|||||||||||||||||
||||||Note : Follow JEDEC TO-252 .||||||Note : Follow JEDEC TO-252 .|||Note : Follow JEDEC TO-252 .||||||||||||||||||||||||||||||||||
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
_www.sinopowersemi.com_
8
sinopower **®** UX
## **SM2501NSU**
## **Carrier Tape & Reel Dimensions**
**==> picture [315 x 350] intentionally omitted <==**
**----- Start of picture text -----**<br>
pl OD0 OT P0 P2 P1 7 A<br>|<br>|<br>_ K0 B fd A0 L OD1 B A<br>a SECTION A-A<br>LL—<br>LTS<br>SECTION B-B<br>d<br>\ \ if \ WA W, oc_/ /<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
9
_www.sinopowersemi.com_
**®** sinopower VAN
## **SM2501NSU**
## **Taping Direction Information**
**TO-252-3**
USER DIRECTION OF FEED
## **Classification Profile**
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
_www.sinopowersemi.com_
10
**®**
## **SM2501NSU**
## **Classification Reflow Profiles**
**Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Preheat & Soak** 100 °C 150 °C Temperature min (Tsmin) 150 °C 200 °C Temperature max (Tsmax) 60-120 seconds 60-120 seconds Time (Tsmin to Tsmax) (ts) Average ramp-up rate ° ° 3 C/second max. 3 C/second max. (Tsmax to TP) Liquidous temperature (TL) 183 °C 217 °C Time at liquidous (tL) 60-150 seconds 60-150 seconds Peak package body Temperature * See Classification Temp in table 1 See Classification Temp in table 2 (Tp) Time (tP)** within 5°C of the specified 20** seconds 30** seconds classification temperature (Tc) Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max. Time 25°C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm** ~~**[3 ]**~~ **Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~===>~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~——~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. 11 _www.sinopowersemi.com_
Copyright Sinopower Semiconductor, Inc. Sinopower Semiconductor, Inc.Sinopower Semiconductor, Inc. Rev. A.1 - October, 2013
Updated at February 12, 2024
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