Image not available
Illustrative purposes only
SM2314NSA
SM2314NSA, Single MOSFET, N Channel, 20V, SOT-23
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: N
- BV(V): 20
- Package: View
- 1.8V max.: 85
- 2.5V max.: 60
- VGS (±V): 8
- VTH(V) typ.: 0.75
- ID (A) TA=25: 4.5
- Rg (Ω) typ.: 3.3
- Ciss (pF) typ.: 240
- Coss (pF) typ.: 46
- Crss (pF) typ.: 27
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 4.5V max.: 45
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
- **SM2314NSA ®** N-Channel Enhancement Mode MOSFET - ~~co~~ **Features Pin Description •** 20V/4.5A , RDS(ON)=45mΩ (max.) @ VGS=4.5VDS(ON)=45mΩ (max.) @ VGS=4.5V=45mΩ (max.) @ VGS=4.5VΩ (max.) @ VGS=4.5V(max.) @ VGS=4.5VGS=4.5V=4.5V D RDS(ON)=60mΩ (max.) @ VGS=2.5VDS(ON)=60mΩ (max.) @ VGS=2.5V=60mΩ (max.) @ VGS=2.5VΩ (max.) @ VGS=2.5V(max.) @ VGS=2.5VGS=2.5V=2.5V S RDS(ON)=85mΩ (max.) @ VGS=1.8VDS(ON)=85mΩ (max.) @ VGS=1.8V=85mΩ (max.) @ VGS=1.8VΩ (max.) @ VGS=1.8V(max.) @ VGS=1.8VGS=1.8V=1.8V ~~7~~ G vi - **•** Reliable and Rugged **==> picture [436 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> N-Channel Enhancement Mode MOSFET<br>Pin Description<br>20V/4.5A ,<br>RDS(ON)=45mΩ (max.) @ VGS=4.5VDS(ON)=45mΩ (max.) @ VGS=4.5V=45mΩ (max.) @ VGS=4.5VΩ (max.) @ VGS=4.5V(max.) @ VGS=4.5VGS=4.5V=4.5V D<br>RDS(ON)=60mΩ (max.) @ VGS=2.5VDS(ON)=60mΩ (max.) @ VGS=2.5V=60mΩ (max.) @ VGS=2.5VΩ (max.) @ VGS=2.5V(max.) @ VGS=2.5VGS=2.5V=2.5V S<br>RDS(ON)=85mΩ (max.) @ VGS=1.8VDS(ON)=85mΩ (max.) @ VGS=1.8V=85mΩ (max.) @ VGS=1.8VΩ (max.) @ VGS=1.8V(max.) @ VGS=1.8VGS=1.8V=1.8V G<br>Reliable and Rugged<br>Lead Free and Green Devices Available Top View of SOT-23-3<br>**----- End of picture text -----**<br> - Lead Free and Green Devices Available (RoHS Compliant) **==> picture [39 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>**----- End of picture text -----**<br> - ESD Protection ## **Applications** - Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems N-Channel MOSFET ## **Ordering and Marking Information** **==> picture [415 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> SM2314NS Package Code<br> A : SOT-23-3<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Temperature Range Handling Code<br>Package Code TR : Tape & Reel (3000ea/reel)<br>Assembly Material<br> G : Halogen and Lead Free Device<br>SM2314NS A : A14XX XX - Lot Code<br>**----- End of picture text -----**<br> Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. _www.sinopowersemi.com_ 1 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 ## **SM2314NSA** ## **®** sinopower MA **Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) |**Symbol**<br>~~aee~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~eee~~|**Unit**<br>~~eee~~| |---|---|---|---|---| |VDSS<br>~~ee~~|Drain-Source Voltage<br>~~ee~~||20<br>~~eee~~|V<br>~~eee~~<br>~~eee~~| |VGSS<br>~~ee~~<br>~~aee~~|Gate-Source Voltage<br>~~ee~~<br>~~eeeee~~||±8<br>~~eee~~<br>~~eee~~|| |ID*<br>~~ee~~<br>~~ee~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee ~~<br>~~eee~~|4.5<br> ~~eee~~<br>~~eee~~|A<br>~~eee~~<br>~~eee~~| |||TA=70°C<br>~~eee~~<br>~~a~~|3.5<br>~~eee~~<br>~~a~~|| |IDM*<br>~~ee~~<br>~~a~~|Pulsed Drain Current<br>~~ee ~~|TA=25°C<br> ~~eee~~|18<br>~~eee~~|| |IS*<br>~~a~~|Diode Continuous Forward Current||1|A| |TJ<br>~~a~~<br>~~a~~|Maximum Junction Temperature<br>~~ee~~<br>||150<br>~~ee~~<br>|°C<br>~~ee~~<br>| |TSTG<br>~~a~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br><br>~~ee~~||-55 to 150<br>~~ee~~<br><br>|| |PD*<br>~~ee~~<br>~~PoP~~|Maximum Power Dissipation<br>~~ee~~<br>~~PoP~~|TA=25°C<br>~~ee~~<br>~~ee~~|1.4<br>~~ee~~<br>|W<br>~~ee~~<br>~~=~~| |||TA=70°C<br>~~ee~~<br>~~eeee~~|0.89<br>~~ee~~<br>~~ee~~|| |RθJA*<br>~~PoP~~|Thermal Resistance-Junction to Ambient<br>~~PoP~~|t≤10s<br>~~eeee~~|90<br>~~ee~~|°C/W<br>~~=~~| |||Steady State<br>~~eeee~~<br>~~a~~|110<br>~~ee~~<br>~~a~~|| 2 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ ## **SM2314NSA** ## **®** sinopower MA ## **Electrical Characteristics** (TA = 25°C unless otherwise noted) |**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |**Static Characteristics**|||||||| |BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||20<br>|-<br>|-<br>|V<br>| |IDSS<br>~~aee~~<br>~~a~~<br>~~a~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>~~es~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~—~~<br>~~|~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~| ||||TJ=85°C<br>~~ee~~<br>~~—~~<br>~~|~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~|| |VGS(th)<br>~~a~~<br>~~a~~|Gate Threshold Voltage<br>~~es~~|VDS=VGS, IDS=250µA<br>~~—~~<br>~~|~~||0.5|0.75|1|V| |IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current<br>~~es~~|VGS=±8V, VDS=0V<br>~~—~~<br>~~|~~<br>~~ee~~||-<br>~~ee~~<br>|-<br>~~**e**e~~<br>|±10<br>~~ee~~<br>|µA<br>| |RDS(ON)<br>a<br>~~a~~|Drain-Source On-state Resistance|VGS=4.5V, IDS=4.5A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~e~~|36<br>~~ee~~<br>~~**e**e~~<br>~~e~~|45<br>~~ee~~<br>~~ee~~<br>~~e~~|mΩ<br>~~e~~| |||VGS=2.5V, IDS=3.5A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~e~~<br>~~ee~~|45<br>~~ee~~<br>~~**e**e~~<br>~~e~~<br>~~ee~~|60<br>~~ee~~<br>~~ee~~<br>~~e~~|| |||VGS=1.8V, IDS=2A<br>~~ee ~~<br>~~ee~~||-<br>~~ee ~~<br> ~~e~~<br>~~ee~~<br>~~ee~~|56<br> ~~**e**e ~~<br>~~e ~~<br>~~ee~~<br>~~ee~~|85<br> ~~ee~~<br> ~~e~~<br>~~ee~~|| |VSD<br>a<br>~~a~~<br>~~Ce~~|Diode Forward Voltage<br>|ISD=1A, VGS=0V||-<br>~~ee ~~|0.7<br> ~~ee~~|1.3|V| |**Gate Charge Characteristics**<br>b<br>~~Cea ee~~<br>~~ae~~|||||||| |Qg<br>~~Cea ee~~<br>~~es~~|Total Gate Charge<br>~~ee~~|VDS=10V, VGS=4.5V,<br>IDS=4.5A||-<br>~~ae~~<br>~~pf~~|3<br>~~ae~~<br>~~pf~~|-<br>~~ae~~<br>~~pf~~|nC| |Qgs<br>~~a ee~~<br>~~es~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~|||-<br>~~ae~~<br>~~pf~~<br>~~PE~~|0.6<br>~~ae~~<br>~~pf~~<br>~~PE~~|-<br>~~ae~~<br>~~pf~~<br>~~PE~~|| |Qgd<br>~~es~~<br>~~ee~~|Gate-Drain Charge|||-<br>~~pf~~<br>~~PE~~|1<br>~~pf~~<br>~~PE~~|-<br>~~pf~~<br>~~PE~~|| |**Dynamic Characteristics**<br>b<br>~~ee~~<br>~~PE~~|||||||| |RG<br>~~a~~<br>~~a~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~||-<br>~~Pt~~|3.3<br>~~Pt~~|-<br>~~Pt~~|Ω| |Ciss<br>~~a~~<br>~~a~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~ee~~||-<br>~~Pt~~|240<br>~~Pt~~|-<br>~~Pt~~|pF| |Coss<br>~~a~~<br>~~es~~|Output Capacitance<br>~~ee~~|||-<br>~~Pt~~<br>~~Pt~~|46<br>~~Pt~~<br>~~Pt~~|-<br>~~Pt~~<br>~~Pt~~|| |Crss<br>~~es~~|Reverse Transfer Capacitance|||-<br>~~Pt~~<br>~~P|~~|27<br>~~Pt~~<br>~~P|~~|-<br>~~Pt~~<br>~~P|~~|| |td(ON)<br>~~es~~<br>~~a~~|Turn-on DelayTime|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=4.5V,<br>RG=6Ω<br>~~A~~||-<br>~~Pt~~<br>~~P|~~|2.5<br>~~Pt~~<br>~~P|~~|4.5<br>~~Pt~~<br>~~P|~~|ns| |tr<br>~~a~~|Turn-on Rise Time|||-<br>~~Pt~~|13<br>~~Pt~~|23.5<br>~~Pt~~|| |td(OFF)<br>~~a~~|Turn-off DelayTime|||-<br>~~Pt~~|13.5<br>~~Pt~~|24.5<br>~~Pt~~|| |tf<br>~~a~~<br>~~a~~|Turn-off Fall Time|||-<br>~~pt~~<br>~~ee~~|2.5<br>~~pt~~<br>~~ee~~|4.5<br>~~pt~~<br>~~ee~~|| |trr<br>~~es~~<br>~~a~~|Reverse RecoveryTime<br>~~es~~<br>~~ee~~|ISD=4.5A, dlSD/dt=100A/µs<br>~~es~~<br>~~A~~<br>~~ee~~<br>~~|~~||-<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~|~~|7.2<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|ns<br>~~es~~| |Qrr<br>~~es~~<br>~~a~~|Reverse RecoveryCharge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~|~~|2.2<br>~~es~~<br>~~ee~~|-<br>~~es~~<br>~~ee~~|nC<br>~~es~~| 3 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ K **®** **SM2314NSA ®** ## **Typical Operating Characteristics** **Power Dissipation** **==> picture [192 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>T =25 o C<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br> ## **Drain Current** **==> picture [191 x 224] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=4.5V<br>0<br>0 20 40 60 80 100 120 140 160<br> Tj - Junction Temperature (°C)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br> **Safe Operation Area** **Thermal Transient Impedance** **==> picture [430 x 225] intentionally omitted <==** **----- Start of picture text -----**<br> 100 2<br>1 Duty = 0.5<br>0.2<br>10<br>0.1<br>0.05<br>1 300µs 0.02<br>1ms<br>0.1<br>0.01<br>10ms<br>100ms<br>0.1<br>DC Single Pulse<br>Mounted on 1in2 pad<br>0.01 TA=25oC 0.01 RθJA : 90 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 4 **®** ## **SM2314NSA** ## **Typical Operating Characteristics (Cont.)** **Output Characteristics** **==> picture [430 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> Output Characteristics Drain-Source On Resistance<br>18 120<br>VGS=3,4,5,6,7,8,9,10V<br>15 100<br>V =1.8V<br>GS<br>12 2V 80<br>9 60<br>1.8V<br>V =2.5V<br>GS<br>V =4.5V<br>6 40 GS<br>1.5V<br>3 20<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 18<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>[a]<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [188 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> Gate-Source On Resistance<br>120<br>I =4.5A<br>DS<br>100<br>80<br>60<br>40<br>20<br>0<br>1 2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br> **==> picture [190 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 5 ## **SM2314NSA** **==> picture [3 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>**----- End of picture text -----**<br> ## **Typical Operating Characteristics (Cont.)** **Drain-Source On Resistance** **Source-Drain Diode Forward** **==> picture [434 x 513] intentionally omitted <==** **----- Start of picture text -----**<br> 1.8 20<br>V =4.5V<br>GS<br>1.6 IDS =4.5A 10<br>1.4<br>T =150 o C<br>j<br>1.2<br>1.0 T =25oC<br>1 j<br>0.8<br>0.6<br>0.4<br>0.2 zs RON@Tj=25 o C: 36mΩ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>350 10<br>Frequency=1MHz V =10V<br>DS<br>9<br> I =4.5A<br>300 DS<br>8<br>250 Ciss 7<br>6<br>200<br>5<br>150<br>4<br>3<br>100<br>2<br>Crss Coss<br>50<br>1<br>0 0 i<br>0 4 8 12 16 20 0 1 2 3 4 5 6 7<br>VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance IS<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 6 _www.sinopowersemi.com_ ## **SM2314NSA** ## **®** sinopower WA ## **Avalanche Test Circuit and Waveforms** **==> picture [167 x 105] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>J<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [162 x 119] intentionally omitted <==** **----- Start of picture text -----**<br> tp VDSX(SUS)<br>IAS or VDS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br> ## **Switching Time Test Circuit and Waveforms** **==> picture [175 x 108] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>o&<br>**----- End of picture text -----**<br> **==> picture [146 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 7 **®** sinopower WN ## **SM2314NSA** ## **Package Information** ## **SOT-23-3** **==> picture [304 x 257] intentionally omitted <==** **----- Start of picture text -----**<br> D -T- SEATING PLANE < 4 mils<br>e<br>SEE<br>VIEW A<br>LEP<br>|<br>b c<br>|<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br> **==> picture [442 x 247] intentionally omitted <==** **----- Start of picture text -----**<br> SYM MILLIMETERS SOT-23-3 INCHES RECOMMENDED LAND PATTERN 0.8<br>BO<br>_—— L ee MIN. MAX. MIN. MAX. i n<br>A - 1.20 - 0.047<br>a |<br>A1 0.00 0.08 0.000 0.003<br>a OY<br>A2 0.90 1.12 0.035 0.044<br>ee LH) |<br>b 0.30 0.50 0.012 0.020<br>a ee 2.4<br>c 0.08 0.22 0.003 0.009<br>ee ee<br>D 2.70 3.10 0.106 0.122<br>a ee ee | oo<br>E 2.60 3.00 0.102 0.118<br>a 0.8 M W , WN)<br>E1 1.40 1.80 0.055 0.071<br>e 0.95 BSC 0.037 BSC<br>ee<br>e1 1.90 BSC 0.075 BSC<br>i YY GO<br>L 0.30 0.60 0.012 0.024 0.95<br>aa<br>0 0° 8° 0° 8°<br>P-f UNIT: mm<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br> burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br> per side.<br>**----- End of picture text -----**<br> Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 8 > **SM2314NSA** K **®** ## **Carrier Tape & Reel Dimensions** ||H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|H<br>A<br>~~d~~<br>A<br>E1<br>A<br>B<br>F<br>T<br>P0<br>OD0<br>B<br>A0<br>P2<br>K0<br>B0<br>SECTION B-B<br>SECTION A-A<br>OD1<br>P1<br>~~vrereest~~<br>~~i@~~|W||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |||||||||T1|||||||||||||||||||||||||||||| ||||||||||||||||||||||||||||||||||||||| |**Application**|**A**|||||||**H**||||||**T1**<br>**C**<br>**d**|||||||**D**|||||||**W**|||||**E1**|||**F**|| ||178.0±2.00||||||50 MIN.|||||||8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.201.5 MIN.||||20.2 MIN.||||||||8.0±0.30|||||1.75±0.10|||||3.5±0.05|| |**SOT-23-3**|**P0**|||||||**P1**||||||**P2**<br>**D0**<br>**D1**|||||||**T**|||||||**A0**|||||**B0**|||**K0**|| ||4.0±0.10|||||4.0±0.10|||||||2.0±0.05<br>1.5+0.10<br>-0.001.0 MIN.|||||||0.6+0.00<br>-0.40|||0.6+0.00<br>-0.40|0.6+0.00<br>-0.40|3.20±0.20||||||3.10±0.20|||||1.50±0.20|| |||||||||||||||||||||||||||||||||||||(mm)|| 9 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ **®** sinopower VAN ## **SM2314NSA** ## **Taping Direction Information** ## **SOT-23-3** ## USER DIRECTION OF FEED ## **Classification Profile** Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 10 **®** ## **SM2314NSA** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=sSS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~—————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C ## **Customer Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5642050 Copyright Sinopower Semiconductor, Inc. Rev. A.2 - February, 2014 _www.sinopowersemi.com_ 11
Updated at February 12, 2024
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →