SM2306NSA

**SM2306NSA ®** 

N-Channel Enhancement Mode MOSFET ~~oo~~ 

## **Features** 

## **Pin Description** 

- 30V/4.7A, 

- RDS(ON)=40mΩ(max.) @ VGS=10V 

- RDS(ON)=60mΩ(max.) @ VGS=4.5V 

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- Reliable and Rugged 

- Lead Free and Green Devices Available 

Top View of SOT-23 

- (RoHS Compliant) 

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## **Applications** 

- Power Management in Notebook Computer, 

- Portable Equipment and Battery Powered Systems. 

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- Load Switch 

N-Channel MOSFET 

**Ordering and Marking Information** 

SM2306NS Package Code A : SOT-23 Assembly Material Operating Junction Temperature Range Handling Code C : -55  to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel Assembly Material G : Halogen and Lead Free Device ~~a~~ e SM2306NS  A: A06XX XX - Lot Code a Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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## **SM2306NSA** 

**Absolute Maximum Ratings** (TA = 25°C unless otherwise noted) 

~~a~~ **Symbol** ~~ee~~ **Parameter Rating Unit** VDSS Drain-Source Voltage 30 V ~~esa~~ VGSSID Gate-Source VoltaContinuous Drain Current ge TA=25°C ±20 4.7 ~~i~~ TA=70°C 3.7 A ~~eee~~ IDM 300µs Pulsed Drain Current VGS=10V 18 ~~Ca ee eee~~ IS Diode Continuous Forward Current 1 A ~~a~~ TJ Maximum Junction Temperature 150 °C ~~aee~~ TPSTGD StoraMaximum Power Dissipation  ge Temperature Range TA=25°C -55 to 150 1.4 ~~ie~~ W ~~es~~ TA=70°C 0.9 t ≤ 10sec 90 RθJA* Thermal Resistance-Junction to Ambient °C/W ~~a eea~~ Steady state ~~ee~~ 140 2 Note: *Surface Mounted on 1in pad area, t ≤ 10sec. ~~eel~~ 

**Electrical Characteristics** (TA = 25°C unless otherwise noted) 

**SM2306NSA Symbol Parameter Test Conditions Unit** ~~ee~~ **Min. Typ. Max. Static Characteristics** ~~Cn — | | se~~ BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA 30 - - V VDS=24V, VGS=0V - - 1 IDSS Zero Gate Voltage Drain Current µA ~~aee~~ TJ=85°C - - 30 ~~a~~ VGS(th) Gate Threshold Voltage VDS=VGS, IDS=250µA 1.3 ~~eee~~ 1.8 ~~eee~~ 2.5 V ~~ee~~ IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA RDS(ON) a Drain-Source On-State Resistance VGS=10V, IDS=4A - 32 40 mΩ ~~aee~~ VGS=4.5V, IDS=3A - ~~ee~~ 46 60 ~~ee~~ **Diode Characteristics** ~~Ce es~~ VSDa Diode Forward Voltage ISD=1A, VGS=0V - 0.75 1.1 V trr Reverse Recovery Time - 10 - ns ISD=4A, dlSD/dt=100A/µs Qrr Reverse Recovery Charge - 4 - nC ~~ir a — ft[ff]~~ 

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## **SM2306NSA** 

**Electrical Characteristics (Cont.)** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~ee~~<br>~~a~~|**Parameter**<br>~~ee~~<br>~~a~~|**Test Conditions**<br>~~ee~~|**Test Conditions**<br>~~ee~~|**SM2306NSA**<br>~~ee~~|**SM2306NSA**<br>~~ee~~|**SM2306NSA**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|---|---|---|
|||||**Min.**<br>~~ee~~<br>~~|~~|**Typ.**<br>~~ee~~<br>~~|~~|**Max.**<br>~~ee~~<br>~~|~~||
|**Dynamic Characteristics**<br>b<br>~~||~~<br>~~a~~||||||||
|Rg<br>~~a~~<br>~~a eC~~<br>~~ee~~|Gate Resistance<br>~~a~~<br>~~eC~~|VGS=0V,VDS=0V,F=1MHz<br>~~eC~~||-<br>~~| ~~<br>~~eC~~<br>~~|~~|2.1<br> ~~|~~<br>~~eC~~<br>~~ft~~|-<br>~~|~~<br>~~eC~~<br>~~ft~~|Ω<br>~~eC~~|
|Ciss<br>~~a eC~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~eC~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz<br>~~eC~~<br>~~—~~<br>~~—~~<br>~~—_~~||-<br>~~eC~~<br>~~|~~<br>~~—~~<br>~~**|**~~|240<br>~~eC~~<br>~~ft~~|-<br>~~eC~~<br>~~ft~~|pF<br>~~eC~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~a~~|Output Capacitance|||-<br>~~|~~<br>~~—~~<br>~~**|**~~<br>~~—~~|40<br>~~ft~~<br>|-<br>~~ft~~<br>||
|Crss<br>~~ee~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance|||-<br>~~—~~<br>~~**|**~~<br>~~—ff~~<br>~~—_|~~|30<br>~~ff~~<br>~~|~~|-<br>~~ff~~||
|td(ON)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on DelayTime|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~—~~<br>~~—_~~<br>~~—~~<br>~~—~~<br>~~—~~||-<br>~~—~~<br>~~—_|~~<br>~~—|~~|4.5<br><br>~~|~~<br>~~|~~|9<br>|ns|
|Tr<br>~~a~~<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~—_ |~~<br>~~—|~~<br>~~—|~~|11<br>~~|~~<br>~~|~~<br>~~|~~|21<br>~~|~~||
|td(OFF)<br>~~a~~<br>~~a~~<br>~~a~~|Turn-off DelayTime<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~<br>~~—|~~|11<br>~~|~~<br>~~|~~<br>~~|~~|21<br>~~|~~||
|Tf<br>~~a~~<br>~~a~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~|2.6<br>~~|~~<br>~~|~~|5<br>~~|~~||
|**Gate Charge Characteristics**<br>b<br>~~a~~<br>~~— |~~<br>~~|~~<br>~~eeeee~~||||||||
|Qg<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=15V,<br>IDS=4A<br>~~ee~~<br>~~ee~~|VGS=4.5V,<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|3<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|nC|
||||VGS=10V<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~—~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>~~—~~<br>~~**|**~~|6.2<br>~~ee~~<br>~~eee~~<br>~~ee~~|-<br>~~ee~~<br>~~eee~~<br>~~ee~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge|VDS=15V, VGS=10V,<br>IDS=4A<br>~~ee eee~~<br>~~—~~<br>~~—~~<br>~~ee~~||-<br>~~eee~~<br>~~—~~<br>~~**|**~~<br>~~—|~~|0.8<br>~~eee~~<br>~~|~~|-<br>~~eee~~<br>~~|~~||
|Qgd<br>~~a~~<br>~~a~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~|||-<br>~~—~~<br>~~**|**~~<br>~~—|~~<br>~~|~~|1.6<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|Qgth<br>~~a~~<br>~~a~~|Threshold Gate Charge<br>~~ee~~|||~~— |~~<br>~~|~~|3.1<br>~~|~~<br>~~|~~<br>~~|~~|~~|~~<br>~~|~~<br>~~|~~||



Note a: Pulse test; pulse width≤300µs, duty cycle≤2%. Note b: Guaranteed by design, not subject to production testing. 

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**®** 

## **SM2306NSA** 

## **Typical Operating Characteristics** 

**Drain Current** 

**Power Dissipation** 

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5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>V =10V<br>G<br>0.0<br>0 20 40 60 80 100 120 140 160<br>      TA - Ambient Temperature (°C)A - Ambient Temperature (°C)- Ambient Temperature (°C)<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>


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1.6 5.0<br>4.5<br>1.4<br>4.0<br>1.2<br>3.5<br>1.0<br>3.0<br>0.8 2.5<br>2.0<br>0.6<br>1.5<br>0.4<br>1.0<br>0.2<br>0.5<br>V =10V<br>G<br>0.0 0.0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>TA - Ambient Temperature (°C)       TA - Ambient Temperature (°C)A - Ambient Temperature (°C)- Ambient Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10 0.2<br>0.1<br>0.05<br>300µs 0.1 0.02<br>1 0.01<br>1ms<br>10ms<br>0.1 100ms 0.01 Single Pulse<br>DC<br>Mounted on 1in 2  pad<br>0.01 TA=25oC 1E-3 RθJA : 90 oC/W<br>0.01 0.1 1 10 100 300 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**®** 

## **SM2306NSA** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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20<br>VGS=4.5,5,6,7,8,9,10V<br>16<br>4V<br>12<br>8 3.5V<br>4<br>3V<br>2.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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VDS - Drain-Source Voltage (V)<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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120<br>I =4A<br>DS<br>100<br>80<br>60<br>40<br>20<br>0<br>2 3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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90<br>75<br>V =4.5V<br>60 GS<br>45<br>V =10V<br>GS<br>30<br>15<br>0<br>0 4 8 12 16 20<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[=]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>1.4<br>IDS=250µA<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 =<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM2306NSA** 

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## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V  =10V<br>GS<br>1.6  I DS =4A<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 y RON@Tj=25oC: 32mΩ<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>400<br>Frequency=1MHz<br>350<br>300<br>250<br>Ciss<br>200<br>150<br>100<br>50 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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20<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>        VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V  =15V<br>DS<br>9<br> I  =4A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5 6 7<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**SM2306NSA** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**SM2306NSA** 

## **Disclaimer** 

Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to develop high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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sinopower **®** UA 

**SM2306NSA** 

## **Classification Profile** 

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**®** 

## **SM2306NSA** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~———~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~Se~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor Inc.** 

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