SM2303PSA

SM2303PSA, Single MOSFET, P Channel, -30V, SOT-23

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: P
BV(V): -30
Package: View
VGS (±V): 20
VTH(V) typ.: -1.8
ID (A) TA=25: -4
Rg (Ω) typ.: 3.8
Ciss (pF) typ.: 420
Coss (pF) typ.: 77
Crss (pF) typ.: 55
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 56
RON(mΩ max) 4.5V max.: 88
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
**SM2303PSA ®** 

P-Channel Enhancement Mode MOSFET ~~co~~ 

## **Features** 

## **Pin Description** 

- -30V/-4A, 

   - RDS(ON) = 56mΩ(max.) @ VGS =-10V RDS(ON) = 88mΩ(max.) @ VGS =-4.5V 

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D<br>S<br>G<br>**----- End of picture text -----**<br>


- Reliable and Rugged 

- Lead Free and Green Devices Available 

Top View of SOT-23-3 

- (RoHS Compliant) 

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## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. 

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G<br>S<br>P-Channel MOSFET<br>**----- End of picture text -----**<br>


**Ordering and Marking Information** 

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SM2303PS Package Code<br>     A : SOT-23-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code      C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>     TR : Tape & Reel (3000ea/reel)<br>Package Code Assembly Material<br>     G : Halogen and Lead Free Device<br>e e<br>SM2303PS  A : B03XX XX - Lot Code<br>pe<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

_www.sinopowersemi.com_ 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

## **SM2303PSA** 

## **®** sinopower MA 

## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**|**Parameter**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|---|
|VDSS|Drain-Source Voltage||-30|V|
|VGSS|Gate-Source Voltage||±20||
|ID<br>a|Continuous Drain Current (VGS=-10V)|TA=25°C|-4|A|
|||TA=70°C|-3.2||
|IDM<br>a|300µs Pulsed Drain Current(VGS=-10V)||-15.8||
|IS<br>a|Diode Continuous Forward Current||-1||
|TJ|Maximum Junction Temperature||150|°C|
|TSTG|Storage Temperature Range||-55 to 150||
|PD<br>a|Maximum Power Dissipation|TA=25°C|1.4|W|
|||TA=70°C|0.9||
|RθJA<br>a|Thermal Resistance-Junction to Ambient|t≤10s|90|°C/W|
|||Steady State|125||



Note a：Surface Mounted on 1in[2 ] pad area, t ≤ 10sec. 

**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Cn~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V,IDS=-250µA<br><br>~~re~~||-30<br><br>~~re ee~~|-<br><br>~~ee~~|-<br><br>~~ee~~|V<br><br>~~ee~~|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=-24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~re~~<br>~~ee~~||-<br>~~ee~~<br>~~re ee~~|-<br>~~ee~~<br>~~ee~~|-1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~re~~<br>~~ee~~|-<br>~~ee~~<br>~~re ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~|-30<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~sO~~|Gate Threshold Voltage<br>~~sO~~|VDS=VGS, IDS=-250µA<br>~~re~~<br>~~sO~~||-1.3<br>~~re ee~~<br>~~sO~~|-1.8<br>~~ee~~<br>~~sO~~|-2.3<br>~~ee~~<br>~~sO~~|V<br>~~ee~~<br>~~sO~~|
|IGSS<br>~~sO~~<br>~~sO~~|Gate Leakage Current<br>~~sO~~<br>~~sO~~|VGS=±20V, VDS=0V<br>~~sO~~<br>~~sO~~||-<br>~~sO~~<br>~~sO~~|-<br>~~sO~~<br>~~sO~~|±100<br>~~sO~~<br>~~sO~~|nA<br>~~sO~~<br>~~sO~~|
|RDS(ON)<br>b <br>~~Er~~<br>~~Ce~~|Drain-Source On-state Resistance<br>~~Er~~<br>|VGS=-10V, IDS=-4A<br>~~Er~~<br>||-<br>~~Er~~<br>~~ee~~<br>|45<br>~~Er~~<br>~~ee~~<br>|56<br>~~Er~~<br>|mΩ<br>~~Er~~<br>|
|||VGS=-4.5V, IDS=-2.5A<br>~~Er~~<br>~~ee~~<br>||-<br>~~Er~~<br>~~ee~~<br>~~ee~~<br>|65<br>~~Er~~<br>~~ee~~<br>~~ee~~<br>|88<br>~~Er~~<br>~~ee~~<br>||
|**Diode Characteristics**<br>~~eeee~~<br>~~Ce~~||||||||
|VSD<br>b<br>~~Cea~~<br>~~a~~|Diode Forward Voltage<br><br>|ISD=-1A, VGS=0V<br><br>~~Oe~~<br>||-<br>~~ee ~~<br><br>~~ee~~|-0.8<br> ~~ee~~<br><br>~~ee~~|-1<br><br>~~ee~~|V<br><br>~~ee~~|
|trr<br>c<br>~~es~~<br>~~a~~|Reverse RecoveryTime<br>~~es~~<br>~~ee~~|ISD=-4A, diSD/dt=100A/µs<br>~~es~~<br>~~Oe~~<br>~~ee~~||-<br>~~es~~<br>~~ee~~<br>~~pp~~|16<br>~~es~~<br>~~ee~~<br>~~pp~~|-<br>~~es~~<br>~~ee~~<br>~~pp~~|ns<br>~~es~~<br>~~ee~~<br>~~pp~~|
|Qrr<br>c<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~ee~~<br>~~pp~~|10<br>~~es~~<br>~~ee~~<br>~~pp~~|-<br>~~es~~<br>~~ee~~<br>~~pp~~|nC<br>~~es~~<br>~~ee~~<br>~~pp~~|



**®** sinopower MA 

## **SM2303PSA** 

## **Electrical Characteristics (Cont.)** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>d<br>~~a~~|||||||
|Rg<br>~~a~~<br>~~rs~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~<br>~~oo~~|-<br>~~oo~~|3.8<br>~~oo~~|-<br>~~oo~~|Ω|
|Ciss<br>~~rs~~<br>~~rs~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-15V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~oo~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~oo~~<br>~~|~~|420<br>~~oo~~<br>~~|~~|-<br>~~oo~~<br>~~|~~|pF|
|Coss<br>~~rs~~<br>~~rs~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~||-<br>~~oo~~<br>~~|~~<br>~~|~~|77<br>~~oo~~<br>~~|~~<br>~~|~~|-<br>~~oo~~<br>~~|~~<br>~~|~~||
|Crss<br>~~rs~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~||-<br>~~|~~<br>~~|~~<br>~~|~~|55<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-on Delay Time|VDD=-15V, RL=15Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~of~~<br>~~ee~~<br>~~of~~|-<br>~~|~~<br>~~|~~<br>~~ft~~|8<br>~~|~~<br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~|~~<br>~~ft~~|ns|
|tr<br>~~ee~~<br>~~es~~|Turn-on Rise Time||-<br>~~|~~<br>~~ft~~|10<br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~ft~~||
|td(OFF)<br>~~es~~<br>~~a~~<br>~~rs~~|Turn-off DelayTime<br>~~ee~~||-<br>~~ft~~<br>~~of~~<br>~~of~~|18<br>~~ft~~<br>~~of~~<br>~~of~~|-<br>~~ft~~<br>~~of~~<br>~~of~~||
|tf<br>~~rs~~|Turn-off Fall Time<br>~~ee~~||-<br>~~of~~|8<br>~~of~~|-<br>~~of~~||
|**Gate Charge Characteristics**<br>d<br>~~rs~~<br>~~ee~~<br>~~of~~<br>~~CO~~<br>~~rs~~<br>~~of~~|||||||
|Qg<br>~~CO~~<br>~~rs~~<br>~~ee~~|Total Gate Charge<br>~~CO~~<br>~~ee~~|VDS=-15V, VGS=-10V,<br>IDS=-4A<br>~~CO~~<br>~~of~~<br>~~ee~~<br>~~oo~~<br>~~ee~~<br>~~of~~|-<br>~~CO~~<br>~~of~~<br>~~oo~~|9.5<br>~~CO~~<br>~~of~~<br>~~oo~~|-<br>~~CO~~<br>~~of~~<br>~~oo~~|nC<br>~~CO~~|
|Qgs<br>~~rs~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~of~~<br>~~oo~~<br>~~of~~|1.7<br>~~of~~<br>~~oo~~<br>~~of~~|-<br>~~of~~<br>~~oo~~<br>~~of~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~||-<br>~~oo~~<br>~~of~~|2<br>~~oo~~<br>~~of~~|-<br>~~oo~~<br>~~of~~||



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## **SM2303PSA** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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1.6<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>T =25 o C<br>A<br>0.0 =<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>50<br>10<br>300µs<br>1 1ms<br>10ms<br>100ms<br>0.1<br>1s<br>DC<br>TA=25oC<br>0.01<br>0.01 0.1 1 10 100 300<br>-VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Thermal Transient Impedance<br>2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1<br>0.02<br>0.01<br>Single Pulse RMounted on 1inθJA : 90 oC/W 2  pad<br>0.01<br>1E-4 1E-3 0.01 0.1 1 10 30<br>Square Wave Pulse Duration (sec)<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**SM2303PSA** 

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## **Typical Operating Characteristics (Cont.)** 

## **Output Characteristics** 

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Drain-Source On Resistance<br>**----- End of picture text -----**<br>


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16 110<br>V GS =-5,-6,-7,-8,-9,-10V<br>14 100<br>-4V<br>90<br>12<br>80<br>10 V GS =-4.5V<br>-3.5V 70<br>8<br>60<br>6<br>50 V GS =-10V<br>4<br>-3V 40<br>2 30<br>-2.5V<br>0 Be 20<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15<br>-VDS - Drain-Source Voltage (V) -ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>140 1.6<br>I DS =-4A I DS = -250µA<br>1.4<br>120<br>1.2<br>100<br>1.0<br>80<br>0.8<br>60<br>0.6<br>40<br>0.4<br>20 0.2 _<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>-VGS - Gate - Source Voltage (V)  Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A)<br>D   - On - Resistance (m<br>-I DS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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## **SM2303PSA** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics (Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V  = -10V<br>GS<br> I = -4A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>RON@Tj=25 o C: 45mΩ<br>0.4 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>600<br>Frequency=1MHz<br>500<br>Ciss<br>400<br>300<br>200<br>100 Coss<br>Crss<br>0<br>0 5 10 15 20 25 30<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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20<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>-VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>S<br>-I<br>**----- End of picture text -----**<br>


**Gate Charge** 

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10<br>V =-15V<br>9 DS<br> I =-4A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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_www.sinopowersemi.com_ 

**®** sinopower WX. 

**SM2303PSA** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** sinopower WN 

**SM2303PSA** 

## **Package Information** 

## **SOT-23-3** 

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D -T- SEATING PLANE < 4 mils<br>e<br>- py<br>SEE<br>VIEW A<br>nn [an]<br>LL Li<br>b c<br>e1<br>i IL<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>ca] “hh | , t<br>VIEW A<br>SOT-23-3 RECOMMENDED LAND PATTERN<br>SYM Pe MILLIMETERS INCHES 0.8<br>BOL MIN. MAX. MIN. MAX.<br>—— ee o t<br>A ee - ee 1.20 ee - 0.047<br>ee ee LL<br>A1 0.00 0.08 0.000 0.003<br>A2 0.90 1.12 0.035 0.044<br>eea ee AL ) |<br>ee<br>b 0.30 0.50 0.012 0.020<br>ee 2.4<br>c 0.08 0.22 0.003 0.009<br>Sp D 2.70 3.10 0.106 0.122 |<br>E 2.60 3.00 0.102 0.118<br>ee ee 0.8 BW Yi |<br>E1 1.40 1.80 0.055 0.071<br>e 0.95 BSC 0.037 BSC<br>ee<br>e1 1.90 BSC 0.075 BSC<br>tT ML. LZ<br>L 0.30 0.60 0.012 0.024 0.95<br>aa<br>0 0° ee 8° ee 0° 8°<br>ee UNIT: mm<br>ee<br>Note : Dimension D and E1 do not include mold flash, protrusions or gate<br>           burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil<br>           per side.<br>0<br>E1 E<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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## **SM2303PSA** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

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wo OD0 6 P0 éfe P2 P1 ele A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>ur SECTION B-B<br>d<br>| Nav) //<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-23-3**|178.0±2.00|50 MIN.|8.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN.<br>8.0±0.30|1.75±0.10|3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.0 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.403.20±0.20|3.10±0.20|1.50±0.20|



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**®** sinopower VN 

**SM2303PSA** 

## **Taping Direction Information** 

## **SOT-23-3** 

## USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

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**®** 

## **SM2303PSA** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=SS==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~S———————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C 

## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

_www.sinopowersemi.com_ 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - April, 2014 

11
Updated at February 12, 2024
About Novapart

Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
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Stock Shortage Specialist

When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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Compliant Alternatives

We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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