SM2215PSQG

SM2215PSQG, Single MOSFET, P Channel, -20V, DFN2x2A-6_EP

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: P
BV(V): -20
Package: View
1.8V max.: 45
2.5V max.: 27
VGS (±V): 12
ID (A) TA=25: -9.4
Rg (Ω) typ.: 2
Ciss (pF) typ.: 1400
Coss (pF) typ.: 297
Crss (pF) typ.: 237
Tape & Reel: View
Quality Report: View
RON(mΩ max) 4.5V max.: 19
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
sinopower VA **®** 

**SM2215PSQG ®** 

P-Channel Enhancement Mode MOSFET ~~oo~~ 

## **Features** 

## **Pin Description** 

- -20V/-9.4A, 

RDS(ON) = 19m Ω (max.) @ VGS =-4.5V RDS(ON) = 27m Ω (max.) @ VGS =-2.5V RDS(ON) = 45m Ω (max.) @ VGS =-1.8V 

- Super High Dense Cell Design 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

## **Applications** 

- Power Management in Notebook Computer, Portable Equipment and Battery Powered 

   - Systems. 

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S<br>D [D]<br>D<br>G S<br>eS Pin 1<br>D [D]<br>DFN2x2-6<br>(1,2,5,6)<br>D D D D<br>(3)G<br>(4)S<br>**----- End of picture text -----**<br>


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P-Channel MOSFET<br>**----- End of picture text -----**<br>


**Ordering and Marking I nform ation** 

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SM2215PS Package Code<br>     QG : DFN2x2-6<br>Operating Junction Temperature Range<br>Assembly Material<br>     C : -55  to 150  [o] C<br>Handling Code<br>Handling Code<br>Temperature Range      TR : Tape & Reel (3000ea/reel)<br>Package Code Assembly Material<br>     G : Halogen and Lead Free Device<br>E e]<br>2215B<br>SM2215PS  QG : XXXXX XXXXX - Lot Code<br>e e<br>Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-<br>free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight<br>in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>


SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - Novem ber, 2014 

**®** sinopower MA 

**SM2215PSQG** 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~a~~|**Parameter**<br><br>|**Parameter**<br><br>|**Rating**<br><br>~~ae~~<br>|**Unit**<br><br>~~ae~~<br>|
|---|---|---|---|---|
|VDSS<br>~~ee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||-20<br>~~ee~~<br>~~ae~~<br>|V<br>~~ee~~<br>~~ae~~<br><br>~~eee~~|
|VGSS<br>~~ee~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br><br>~~ee~~||±12<br>~~ee~~<br>~~ae~~<br><br>~~eee~~||
|ID<br>a<br>~~ee~~<br>~~aes~~<br>~~a~~|Continuous Drain Current (VGS=-4.5V)<br>~~ee~~<br>~~es~~|TA=25°C<br>~~ee~~<br>~~es~~<br>~~ee~~|-9.4<br>~~ee~~<br>~~ae~~<br>~~es~~<br>~~eee~~<br>~~ee~~|A<br>~~ee~~<br>~~ae~~<br>~~es~~<br>~~eee~~<br>~~ee~~|
|||TA=70°C<br>~~es~~<br>~~ee~~|-7.5<br>~~es~~<br>~~eee~~<br>~~ee~~||
|IDM<br>a<br>~~es~~<br>~~a~~|Pulsed Drain Current (VGS=-4.5V)<br>~~es~~<br>~~ee~~||-37.5<br>~~es~~<br>~~eee~~<br>~~ee~~||
|IS<br>a<br>~~aa~~|Diode Continuous Forward Current||-2<br>~~ee~~||
|TJ<br>~~a~~<br>~~a~~|Maximum Junction Temperature||150|°C|
|IAS<br>b<br>~~a~~|Avalanche Current, Singlepulse|L=0.1mH|-28|A|
|EAS<br>b<br>~~a~~|Avalanche Energy, Singlepulse|L=0.1mH|39|mJ|
|TSTG<br>~~a~~<br>~~a~~|Storage Temperature Range<br><br>~~ee~~||-55 to 150<br><br>~~eee~~<br>||
|PD<br>a<br>~~e~~|Maximum Power Dissipation<br>~~en~~|TA=25°C<br>~~n~~<br>~~ee~~|2.5<br>~~n~~<br>~~eee~~<br>~~eee~~|W<br>~~n~~<br>~~eee~~<br>~~ee~~<br>|
|||TA=70°C<br>~~n~~<br>~~ee~~<br>~~ee~~|1.6<br>~~n~~<br>~~eee~~<br>~~eee~~<br>~~ee~~<br>||
|RθJA<br>a<br>~~e~~<br>~~ee~~|Thermal Resistance-Junction to Ambient<br>~~en~~<br>~~ee~~|t≤10s<br>~~n~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~|50<br>~~n~~<br>~~eee~~<br> ~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|°C/W<br>~~n~~<br>~~eee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|
|||SteadyState<br>~~ee~~<br>~~ee~~|80<br>~~ee~~<br>~~ee~~<br>~~ee~~||



**Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~<br>~~Ce~~|**Parameter**<br>|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Ce~~||||||||
|BVDSS<br>~~Cea~~|Drain-Source Breakdown Voltage<br>|VGS=0V,IDS=-250µA||-20|-|-|V|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=-16V, VGS=0V<br>TJ=85°C<br>~~ese~~<br>~~a ~~||-<br>~~ese~~|-<br>~~ese~~|-1|µA|
||||TJ=85°C<br>~~ese~~<br>~~a ~~|-<br>~~ese~~<br> ~~a~~|-<br>~~ese~~|-30||
|VGS(th)<br>~~Cs~~|Gate Threshold Voltage<br>~~Cs~~|VDS=VGS, IDS=-250µA<br>~~OO~~||-0.4<br>~~OO~~|-<br>~~OO~~|-0.9|V|
|IGSS<br>~~Cs~~<br>~~a ~~|Gate Leakage Current<br>~~Cs~~<br> ~~a~~|VGS=±12V, VDS=0V<br>~~OO~~||-<br>~~OO~~<br>~~ee~~|-<br>~~OO~~|±100|nA|
|RDS(ON)<br>c|Drain-Source On-state Resistance|VGS=-4.5V, IDS=-9.4A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|15<br>~~ee~~<br>~~ee~~|19<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=-2.5V, IDS=-5.9A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|20<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~||
|||VGS=-1.8V, IDS=-2A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|28<br>~~ee~~<br>~~ee~~|45<br>~~ee~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~CO~~||||||||
|VSD<br>c<br>~~a Ge~~|Diode Forward Voltage<br>~~Ge~~|ISD=-1A, VGS=0V<br>~~Ge~~||-<br>~~Ge~~|-0.7<br>~~Ge~~|-1<br>~~Ge~~|V<br>~~Ge~~|
|trr<br>d<br>~~po~~<br>~~ee~~|Reverse Recovery Time<br>~~po~~|ISD=-9.4A,<br>diSD/dt=100A/µs<br>~~po~~<br>~~ee~~||-<br>~~po~~<br>~~ee~~|26<br>~~po~~<br>~~ee~~|-<br>~~po~~<br>~~eee~~|ns<br>~~po~~<br>~~eee~~|
|Qrr<br>d<br>~~po~~<br>~~ee~~|Reverse Recovery Charge<br>~~po~~|||-<br>~~po~~<br>~~ee~~|10<br>~~po~~<br>~~ee~~|-<br>~~po~~<br>~~eee~~|nC<br>~~po~~<br>~~eee~~|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - Novem ber, 2014 

**SM2215PSQG** 

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## **Electrical Characteristics ( Cont.)** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a a~~<br>~~Ce~~|**Parameter**<br>~~a~~<br>|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**<br>d<br>~~Ce~~|||||||
|Rg<br>~~Cea~~<br><br>~~ee~~|Gate Resistance<br>~~a~~<br>~~a~~<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz<br>~~ee~~|-<br>~~**|**~~|2<br>~~**|**~~|-<br>~~**|**~~|Ω|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~aee~~<br>~~ee~~|VGS=0V,<br>VDS=-10V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~ee~~|-<br>~~**|**~~|1400<br>~~**|**~~|-<br>~~**|**~~|pF|
|Coss<br><br>~~ee~~<br>~~ee ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~**|**~~<br>~~|~~<br>~~ee~~|297<br>~~**|**~~<br>~~|~~<br>~~ee~~|-<br>~~**|**~~<br>~~|~~<br>~~ee~~||
|Crss<br><br>~~ee~~<br>~~ee ee~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br>~~**|**~~<br>~~|~~<br>~~ee~~|237<br>~~**|**~~<br>~~|~~<br>~~ee~~|-<br>~~**|**~~<br>~~|~~<br>~~ee~~||
|**Gate Charge Characteristics**<br>d<br>~~|~~<br>~~ee ee~~<br>~~ee~~<br>~~|~~<br>~~ee~~<br>~~|~~|||||||
|Qg<br>~~|~~<br>~~ee~~<br>~~a~~|Total Gate Charge<br>~~|~~<br>~~ee~~|VDS=-10V, VGS=-4.5V,<br>IDS=-9.4A<br>~~|~~<br>~~|~~<br>~~ee~~|-<br>~~|~~<br>~~|||~~<br>~~fT~~|15.6<br>~~|~~<br>~~||~~<br>~~fT~~|-<br>~~|~~<br>~~||~~<br>~~fT~~|nC<br>~~|~~|
|Qgs<br>~~ee~~<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~||-<br>~~|~~<br>~~fT~~<br>~~|~~|2.3<br><br>~~fT~~<br>~~|~~|-<br><br>~~fT~~<br>~~|~~||
|Qgd<br>~~a~~<br>~~a~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~||-<br>~~fT~~<br>~~|~~|4.6<br>~~fT~~<br>~~|~~|-<br>~~fT~~<br>~~|~~||



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## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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3.0 10<br>2.5<br>8<br>2.0<br>6<br>1.5<br>4<br>1.0<br>2<br>0.5<br>TA=25 o C TA=25oC,VG=-4.5V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 2<br>1 Duty =  0.5<br>0.2<br>10<br>0.1<br>300 µ s<br>0.05<br>1ms 0.1<br>0.02<br>1 10ms 0.01<br>100ms<br>1s 0.01 Single Pulse<br>0.1 DC<br>Mounted on 1in 2  pad<br>0.01 TA=25oC 1E-3 R θ JA : 50 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 60<br>-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P  - Drain Current (A)<br>D<br>-I<br>- Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **Typical Operating Characteristics ( Cont.)** 

**Output Characteristics** 

## **Drain-Source On Resistance** 

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40<br>35<br>V GS =-2.5,-3,-4,-5,<br>30         -6,-7,-8,-9,-10V<br>25<br>20<br>-2V<br>15<br>10<br>5<br>-1.5V<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>-VDS - Drain-Source Voltage (V)<br>- Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br>


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50<br>45<br>V =-1.8V<br>GS<br>40<br>35<br>30<br>25 V =-2.5V<br>GS<br>20<br>V =-4.5V<br>GS<br>15<br>10<br>5<br>0 5 10 15 20 25 30<br>-ID - Drain Current (A)<br>)<br>Ω<br> - On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Gate-Source On Resistance** 

**Gate Threshold Voltage** 

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70<br>I =-9.4A<br>DS<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>1 2 3 4 5 6 7 8 9 10<br>-VGS - Gate - Source Voltage (V)<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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1.4<br>IDS =-250 µ A<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM2215PSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

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Drain-Source On Resistance<br>1.8<br>V  = -4.5V<br>GS<br> I  = -9.4A<br>1.6 DS<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4 _ RON@Tj=25 o C: 15m Ω<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>2400<br>Frequency=1MHz<br>2100<br>1800<br>1500<br>Ciss<br>1200<br>900<br>600<br>Coss<br>300 Crss<br>0<br>0 4 8 12 16 20<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


## **Source-Drain Diode Forward** 

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40<br>10<br>T =150oC<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>-VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V =-10V<br>DS<br>9<br> I =-9.4A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>a<br>0<br>0 7 14 21 28 35<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br> - Gate - source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br>


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**®** sinopower WN 

**SM2215PSQG** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tAV<br>EAS<br>— WS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br>


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td(on)  tr td(off)  tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br>


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sinopower VA **®** 

**SM2215PSQG** 

## **Package I nform at ion** 

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DFN2x2-6<br>E<br>PIN 1<br>INDEX AREA<br>a<br>1 6<br>2 5 SEATING PLANE<br>3 4<br>A A<br>PIN#1 IDENTIFICATION A1<br>CHAMFER 0.150X45o<br>A3<br>L K5<br>6 1<br>E1<br>K6<br>5 2<br>K3<br>K1<br>4 3<br>i K4<br>S DFN2x2-6 RECOMMENDED LAND PATTERN<br>Y<br>M MILLIMETERS INCHES<br>B<br>O<br>L MIN. MAX. MIN. MAX.<br>0.65 0.3<br>A 0.70 0.80 0.028 0.031<br>A1 0.00 0.05 0.000 0.002<br>A3 0.200 REF 0.008 REF<br>b 0.25 0.35 0.010 0.014<br>D 1.90 2.10 0.075 0.083<br>E 1.90 2.10 0.075 0.083<br>D1 0.90 1.10 0.035 0.043<br>E1 0.90 1.10 0.035 0.043<br>0.35<br>e 0.65 BSC 0.026 BSC<br>L 0.20 0.30 0.008 0.012 1.6<br>K1 0.65 0.85 0.026 0.033 UNIT: mm<br>K2 0.20 - 0.008 -<br>K3 0.20 - 0.008 -<br>K4 0.32 - 0.013 -<br>K5 0.20 0.26 0.008 0.010<br>K6 0.45 0.55 0.018 0.022<br>D A A1<br>b D1<br>e<br>K2<br>0.275<br>0.3 5<br>2.05 1.2 0.84<br>1.77<br>0.36<br>**----- End of picture text -----**<br>


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## **SM2215PSQG** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dim ensions** 

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P2 P0<br>D0<br>T<br>B0<br>B-B K0<br>A-A B-B<br>D1<br>P1<br>a<br>A0<br>A-A<br>d<br>T1<br>E1<br>F<br>W<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN2x2-6**|178.0±2.00|60.0±0.50|9.0±2.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  2.0±0.20|21.0±0.50|0.50<br>8.0+0.30<br>-0.10|1.75±0.10|0.10<br>3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.3±0.05|0.05<br>2.3±0.10|2.3±0.10|0.10<br>1.05±0.10|



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**®** sinopower VN 

**SM2215PSQG** 

## **Taping Direction I nform at ion** 

## **DFN2x2-6** 

## USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - Novem ber, 2014 

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**®** sinopower MA 

**SM2215PSQG** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - Novem ber, 2014 

**SM2215PSQG** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. 

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm3 Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=a~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ≥ 2.5 mm 250 ° C 245 ° C 245 ° C ~~—————_—~~ **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~—=—~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.4 - Novem ber, 2014
Updated at February 12, 2024
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