SM2204NSQG

SM2204NSQG, Single MOSFET, N Channel, 30V, DFN2x2A-6_EP

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 30
Package: View
VGS (±V): 20
VTH(V) typ.: 1.8
ID (A) TA=25: 7
Rg (Ω) typ.: 3
Ciss (pF) typ.: 345
Coss (pF) typ.: 60
Crss (pF) typ.: 35
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 23
RON(mΩ max) 4.5V max.: 31.5
Delivery and price
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Current stock	10+
Lead time	30 days
Datasheet
sinopower VA **®** 

**SM2 204NSQG ®** 

N-Channel Enhancement Mode MOSFET ~~oo~~ 

## **Features** 

## **Pin Description** 

- 30V/7A, 

   - RDS(ON) = 23m Ω (max.) @ VGS =10V 

   - RDS(ON) = 31.5m Ω (max.) @ VGS =4.5V 

- Avalanche Rated 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

- 100% UIS Tested 

## **Applications** 

- Load Switch 

- HDD 

- DC/DC Converter 

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S<br>D [D]<br>D<br>G S<br>eS Pin 1<br>D [D]<br>DFN2x2-6<br>(1,2,5,6)<br>DD DD<br>(3)G<br>(4)S<br>**----- End of picture text -----**<br>


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N-Channel MOSFET<br>**----- End of picture text -----**<br>


## **Ordering and Marking I nform ation** 

SM2204NS Package Code QG : DFN2x2-6 Operating Junction Temperature Range Assembly Material C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel (3000ea/reel) Package Code Assembly Material G : Halogen and Lead Free Device ~~E~~ e] 2204A SM2204NS  QG : XXXXX XXXXX - Lot Code ~~e~~ e Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - Novem ber, 2014 

**SM2 204NSQG** 

## **®** sinopower MA 

**Absolute Maxim um  Ratings** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|VDSS<br>~~a~~<br>~~oe~~|Drain-Source Voltage<br>~~a~~<br>~~oe~~||30<br>~~a~~<br>~~oe~~|V<br>~~a~~<br>~~oe~~<br>|
|VGSS<br>~~oe~~<br>~~a~~|Gate-Source Voltage<br>~~oe~~<br>||±20<br>~~oe~~<br>||
|TJ<br>~~ee~~|Maximum Junction Temperature<br>~~ee~~||150<br>~~ee~~|°C<br>~~ee~~<br>~~a~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~a~~||-55 to 150<br>~~ee~~<br>~~a~~||
|IS<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~n~~|Diode Continuous Forward Current<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~nnn~~|TC=25°C<br>~~ee~~<br>~~a~~<br>~~a~~<br>~~n~~|3<br>~~ee~~<br>~~a~~<br>~~a~~|A<br>~~ee~~<br>~~a~~<br>~~a~~|
|ID<br>~~a~~<br>~~n~~|Continuous Drain Current<br>~~a~~<br>~~nnn~~|TA=25°C<br>~~a~~<br>~~n~~|7<br>~~a~~|A<br>~~a~~|
|IDM<br>~~n~~|Pulsed Drain Current<br>~~nnn~~|TA=25°C<br>~~n~~|28||
|PD<br>~~n~~|Maximum Power Dissipation<br>~~nnn~~|TA=25°C<br>~~n~~|1.67|W|
|||TA=70°C|1.07||
|RθJA<br>a<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~a~~|t≤10s<br>~~Po~~<br>~~a~~|48<br>~~Po~~<br>~~a~~|°C/W<br>~~a~~|
|||SteadyState<br>a<br>~~a~~|75<br>~~a~~||
|IAS<br>b<br>~~a~~<br>~~Ds~~|Avalanche Current, Single pulse<br>~~a~~|L=0.1mH<br>~~a~~|9<br>~~a~~|A<br>~~a~~|
|EAS<br>b<br>~~a~~<br>~~Ds~~|Avalanche Energy, Single pulse<br>~~a~~|L=0.1mH<br>~~a~~|4.05<br>~~a~~|mJ<br>~~a~~|



Note a：Steady state = 100sec. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 

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**®** sinopower MA 

## **SM2 204NSQG** 

## **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Cn~~<br>~~ee~~||||||||
|BVDSS<br>~~ee~~|Drain-Source Breakdown Voltage<br>|VGS=0V,IDS=250µA<br><br>~~a~~<br>~~eee~~||30<br><br>~~eee~~|-<br><br>~~eee~~|-<br><br>~~ee~~|V<br><br>~~ee~~|
|IDSS<br>~~eeee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=24V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~<br>~~eee~~<br>~~a~~||-<br>~~ee~~<br>~~eee~~|-<br>~~ee~~<br>~~eee~~|1<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~eee~~<br>~~a~~|-<br>~~ee~~<br>~~eee~~<br>~~a~~|-<br>~~ee~~<br>~~eee~~|30<br>~~ee~~<br>~~ee~~||
|VGS(th)<br>~~ee~~<br>~~OO~~|Gate Threshold Voltage<br>~~ee~~<br>~~OO~~|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~a~~<br>~~eee~~<br>~~a ~~<br>~~OO~~||1.5<br>~~ee~~<br>~~eee~~<br> ~~a~~<br>~~OO~~|1.8<br>~~ee~~<br>~~eee ~~<br>~~OO~~|2.5<br>~~ee~~<br> ~~ee~~<br>~~OO~~|V<br>~~ee~~<br>~~ee~~<br>~~OO~~|
|IGSS<br>~~OO~~<br>~~a~~|Gate Leakage Current<br>~~OO~~<br>~~a~~|VGS=±20V, VDS=0V<br>~~OO~~<br>~~a~~<br>~~ee ee~~||-<br>~~OO~~<br>~~a~~<br>~~ee~~|-<br>~~OO~~<br>~~a~~<br>~~ee~~|±10<br>~~OO~~<br>~~a~~<br>~~ee~~|µA<br>~~OO~~<br>~~a~~|
|RDS(ON)<br>c<br>~~a~~|Drain-Source On-state Resistance<br>~~a~~|VGS=10V, IDS=7A<br>~~a~~<br>~~ee ee~~||-<br>~~a~~<br>~~ee~~|19<br>~~a~~<br>~~ee~~|23<br>~~a~~<br>~~ee~~|mΩ<br>~~a~~|
|||VGS=4.5V, IDS=6A<br>~~ee ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|25<br>~~ee~~<br>~~ee~~<br>~~ee~~|31.5<br>~~ee~~<br>~~ee~~||
|||VGS=3.3V, IDS=4A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|36<br>~~ee~~<br>~~ee~~|55<br>~~ee~~||
|**Diode Characteristics**<br>~~ee~~<br>~~ee~~<br>~~Cn~~||||||||
|VSD<br>c<br>~~a~~<br>~~SS~~|Diode Forward Voltage<br>~~a~~<br>~~SS~~|ISD=3A, VGS=0V<br>~~a~~||-<br>~~a~~|0.8<br>~~a~~|1<br>~~a~~|V<br>~~a~~|
|trr<br>d<br>~~SS~~<br>~~ee~~|Reverse Recovery Time<br>~~SS~~|ISD=6.5A, dlSD/dt=100A/µs||-<br>~~Po~~|8<br>~~Po~~|-<br>~~Po~~|ns<br>~~Po~~|
|Qrr<br>d<br>~~SS~~<br>~~ee~~|Reverse Recovery Charge<br>~~SS~~|||-<br>~~Po~~|2.5<br>~~Po~~|-<br>~~Po~~|nC<br>~~Po~~|
|**Dynamic Characteristics**<br>d<br>~~SS~~<br>~~ee~~<br>~~Po~~<br>~~Pn~~||||||||
|RG<br>~~a~~<br>~~a~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,F=1MHz||-<br>~~pT~~|3<br>~~pT~~|-<br>~~pT~~|Ω|
|Ciss<br>~~a~~<br>~~a~~<br>~~ee~~|Input Capacitance<br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=15V,<br>Frequency=1.0MHz||-<br>~~pT~~<br>~~a~~|345<br>~~pT~~<br>~~a~~|450<br>~~pT~~<br>~~a~~|pF|
|Coss<br>~~a~~<br>~~ee~~|Output Capacitance<br>~~ee~~<br>~~ee~~|||-<br>~~pT~~<br>~~a~~|60<br>~~pT~~<br>~~a~~|-<br>~~pT~~<br>~~a~~||
|Crss<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~a~~<br>~~P|~~|35<br>~~a~~<br>~~P|~~|-<br>~~a~~<br>~~P|~~||
|td(ON)<br>~~ee~~<br>~~ee~~|Turn-on DelayTime<br>~~ee~~|VDD=15V, RL=15Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω||-<br>~~a~~<br>~~P|~~<br>~~po~~|10<br>~~a~~<br>~~P|~~<br>~~po~~|18<br>~~a~~<br>~~P|~~<br>~~po~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~a~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~P|~~<br>~~pT~~<br>~~po~~|13.5<br>~~P|~~<br>~~pT~~<br>~~po~~|25<br>~~P|~~<br>~~pT~~<br>~~po~~||
|td(OFF)<br>~~a~~<br>~~ee~~|Turn-off DelayTime<br>~~ee~~|||-<br>~~po~~<br>~~pL~~|18.5<br>~~po~~<br>~~pL~~|34<br>~~po~~<br>~~pL~~||
|tf<br>~~a ~~<br>~~ee~~|Turn-off Fall Time<br> ~~ee~~|||-<br>~~po~~<br>~~pL~~|3.5<br>~~po~~<br>~~pL~~|6.3<br>~~po~~<br>~~pL~~||
|**Gate Charge Characteristics**<br>d<br>~~ee~~<br>~~pL~~||||||||
|Qg<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=25V, VGS=10V,<br>IDS=7A<br>~~ee~~||-<br>~~P|~~<br>~~P|~~|7.6<br>~~P|~~<br>~~P|~~|11<br>~~P|~~<br>~~P|~~|nC|
|Qgs<br>~~a~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~ee~~|0.8<br>~~P|~~<br>~~ee~~|-<br>~~P|~~<br>~~ee~~||
|Qgd<br>~~a~~<br>~~ee~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~P|~~<br>~~ee~~|2.5<br>~~P|~~<br>~~ee~~|-<br>~~P|~~<br>~~ee~~||



Note c：Pulse test ; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note d：Guaranteed by design, not subject to production testing. 

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**SM2 204NSQG** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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1.8 8<br>1.6 7<br>1.4<br>6<br>1.2<br>5<br>1.0<br>4<br>0.8<br>3<br>0.6<br>2<br>0.4<br>0.2 1<br>T A =25 o C T A =25 o C,V G =10V<br>0.0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>100 3<br>1 Duty = 0.5<br>10 0.2<br>0.1<br>0.05<br>1 300 µ s<br>0.02<br>1ms<br>0.1<br>10ms 0.01<br>100ms<br>0.1<br>1s Single Pulse<br>DC<br>Mounted on 1in2 pad<br>0.01 TA=25oC 0.01 a R θ JA : 75 oC/W<br>0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br> - Power (W)<br>tot<br>P<br> - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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**SM2 204NSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

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Output Characteristics Drain-Source On Resistance<br>16 40<br>V GS =4,5,6,7,8,9,10V<br>14 36<br>12 32<br>10 28<br>V =4.5V<br>GS<br>8 24<br>6 3V 20 V GS =10V<br>4 16<br>2.8V<br>2 12<br>2.5V<br>=<br>0 8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14<br>VDS - Drain-Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>70 1.6<br>[Ee] IDS=7A I DS =250 µ A<br>1.4<br>60<br>1.2<br>50<br>1.0<br>40<br>0.8<br>30<br>0.6<br>20<br>0.4<br>10 0.2<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V)  Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A)<br>ID   - On - Resistance (mDS(ON)<br>R<br>)<br>Ω<br> - On Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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**SM2 204NSQG** 

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## **Typical Operating Characteristics ( Cont.)** 

**Drain-Source On Resistance** 

## **Source-Drain Diode Forward** 

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2.5 20<br>VGS = 10V<br> I  = 7A<br>DS 10<br>2.0<br>1.5 Tj=150oC<br>T =25oC<br>1 j<br>1.0<br>0.5<br>RON@Tj=25oC: 19m Ω<br>0.0 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>500 10<br>Frequency=1MHz V  =25V<br>9 DS<br> I  =7A<br>DS<br>400 8<br>Ciss 7<br>300 6<br>5<br>200 4<br>3<br>100 2<br>Coss<br>1<br>Crss<br>0 ia 0 Sf<br>0 5 10 15 20 25 30 0 2 4 6 8<br>VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower MA 

**SM2 204NSQG** 

## **Avalanche Test  Circuit  and W aveform s** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Sw it ching Tim e Test Circuit and W aveform s** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>ef<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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sinopower VA **®** 

**SM2 204NSQG** 

## **Package I nform at ion** 

|**DFN2x2-6**|**DFN2x2-6**|**DFN2x2-6**|**DFN2x2-6**|**DFN2x2-6**|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||||||||||||||||E|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||PIN 1|||PIN 1||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||INDEX AREA||INDEX AREA|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||||SEATING PLANE<br>A<br>A1<br>A<br>A1<br>A3<br>1<br>2<br>3<br>6<br>5<br>4<br>D<br>PIN#1 IDENTIFICATION<br>CHAMFER 0.150X45<br>o<br>e<br>6<br>5<br>4<br>1<br>~~2~~<br>~~3~~<br>D1<br>E1<br>L<br>b<br>K1<br>K2<br>K4<br>K3<br>K5<br>K6<br>~~HAi~~|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||SEATING PLANE||||||||
|||**S**<br>**Y**<br>**M**<br>**B**<br>**O**<br>**L**<br>A||**MIN.**<br>**MAX.**<br>0.80<br>**MILLIMETERS**<br>**DFN2x2-6**<br>0.70|||||||||||||||||||||||**MIN.**<br>0.028||**INCHES**|||||||**MAX.**<br>0.031||||||||**RECOMMENDED LAND PATTERN**<br>0.65<br>0.275|||||||||||||||||||||||**RECOMMENDED LAND PATTERN**<br>0.3||||||||||||||||||||
|||A1||0.00|||||0.05||||||||||||||||||0.000|||||||||0.002|||||||||||||||||||||||||||||||||||||||||||||||||||
|||A3||0.200 REF||||0.200 REF|||||||||||||||||||0.008 REF|||||0.008 REF|||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||b<br>D||1.90<br>0.25|||||2.10<br>0.35||||||||||||||||||0.075<br>0.010|||||||||0.083<br>0.014|||2.05|||||1.2|||||||||||||||||||||||||||||||||0.84||||0.3||||1.775||
|||E||1.90|||||2.10||||||||||||||||||0.075|||||||||0.083|||||||||||||||||||||||||||||||||||||||||||||||||||
|||D1||0.90|||||1.10||||||||||||||||||0.035|||||||||0.043|||||||||||||||||||||||||||||||||||||||||||||||||||
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|||e<br>E1||0.65 BSC<br>0.90|||||1.10||||||||||||||||||0.026 BSC<br>0.035||||0.026 BSC|0.026 BSC<br>0.043||||||||||||||||||||||||||0.35||||||||||||||||||||||||||0.36|||
|||L||0.20|||||0.30||||||||||||||||||0.008|||||||||0.012||||||||||||||||||||||1.6|||||||||||||||||||||||||||||
|||K1||0.65|||||0.85||||||||||||||||||0.026|||||||||0.033||||||||||||||||||||||||||||||||||||||||||||||UNIT: mm|||||
|||K2||0.20|||||-||||||||||||||||||0.008|||||||||-|||||||||||||||||||||||||||||||||||||||||||||||||||
|||K3||0.20|||||-||||||||||||||||||0.008|||||||||-|||||||||||||||||||||||||||||||||||||||||||||||||||
|||K4||0.32|||||-||||||||||||||||||0.013|||||||||-|||||||||||||||||||||||||||||||||||||||||||||||||||
|||K5||0.20|||||0.26||||||||||||||||||0.008|||||||||0.010|||||||||||||||||||||||||||||||||||||||||||||||||||
|||K6||0.45|||||0.55||||||||||||||||||0.018|||||||||0.022|||||||||||||||||||||||||||||||||||||||||||||||||||



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## **SM2 204NSQG** 

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## **Carrier Tape & Reel Dim ensions** 

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P2 P0<br>D0<br>T<br>ERSCELF E | B0<br>B-B K0<br>A-A B-B<br>D1<br>P1<br>as<br>A0<br>A-A<br>d<br>T1<br>E1<br>F<br>W<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**DFN2x2-6**|178.0±2.00|60.0±0.50|9.0±2.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20  2.0±0.20|21.0±0.50|0.50<br>8.0+0.30<br>-0.10|1.75±0.10|0.10<br>3.5±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|4.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.0 MIN.|0.3±0.05|0.05<br>2.3±0.10|2.3±0.10|0.10<br>1.05±0.10|



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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - Novem ber, 2014 

**®** sinopower VN 

**SM2 204NSQG** 

## **Taping Direction I nform at ion** 

## **DFN2x2-6** 

## USER DIRECTION OF FEED 

## **Classificat ion Profile** 

Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - Novem ber, 2014 

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**®** sinopower MA 

**SM2 204NSQG** 

## **Disclaim er** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - Novem ber, 2014 

**SM2 204NSQG** 

**®** 

## **Classification Reflow  Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=SS==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~——=———~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliabilit y Test Prog ram Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~————~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

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Copyright  Sinopow er Sem iconductor, Inc. Rev. A.3 - Novem ber, 2014
Updated at February 12, 2024
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