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SM2054NSD
SM2054NSD, Single MOSFET, N Channel, 20V, SOT-89
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- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: N
- BV(V): 20
- Package: View
- 2.5V max.: 36
- VGS (±V): 12
- VTH(V) typ.: 0.75
- ID (A) TA=25: 7.5
- Rg (Ω) typ.: 1.7
- Ciss (pF) typ.: 400
- Coss (pF) typ.: 85
- Crss (pF) typ.: 75
- Tape & Reel: View
- Quality Report: View
- RON(mΩ max) 10V max.: 21
- RON(mΩ max) 4.5V max.: 23
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SM2054NSD**
## N-Channel Enhancement Mode MOSFET
## **Features**
## **Pin Description**
- 20V/7.5A,
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RDS(ON)= 21mΩ(max.) @ VGS= 10V S<br> RDS(ON)= 23mΩ(max.) @ VGS= 4.5V D<br>G<br> RDS(ON)= 36mΩ(max.) @ VGS= 2.5V<br>• Reliable and Rugged<br>Top View SOT-89<br>• ESD Protection<br>• Lead Free and Green Devices Available<br>D (2)<br> (RoHS Compliant)<br>G (1)<br>Applications<br> Switching Regulators<br>S (3)<br>**----- End of picture text -----**<br>
- Switching Regulators
- Switching Converters
N-Channel MOSFET
**Ordering and Marking Information**
SM2054NS Package Code D : SOT-89 Assembly Material Operating Junction Temperature Range Handling Code C : -55 to 150[o] C Temperature Range Handling Code Package Code TR : Tape & Reel (1000ea/reel) Assembly Material ~~a~~ e G : Halogen and Lead Free Device SM2054 SM2054NS D: XXXXX - Lot Code XXXXX_N a ~~e~~ ee e Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
## **SM2054NSD**
## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~a ee~~<br>~~Ce~~|**Parameter**<br>~~ee~~<br>|**Parameter**<br>~~ee~~<br>|**Rating**<br>~~ee~~<br>|**Unit**<br>~~ee~~<br>|
|---|---|---|---|---|
|**Common Ratings **<br>~~Ce~~<br>~~oe~~<br>~~a~~|||||
|VDSS<br>~~Ceee~~<br>~~a~~|Drain-Source Voltage<br>~~ee~~<br>||20<br>~~ee~~<br>~~oe~~<br>|V<br>~~ee~~<br>|
|VGSS<br>~~ee~~<br>~~a~~|Gate-Source Voltage<br>~~ee~~<br>||±12<br>~~ee~~<br>~~oe~~<br>||
|TJ<br>~~ee~~<br>~~aff~~<br>~~Pe~~|Maximum Junction Temperature<br>~~ee~~<br>~~ff~~<br>||150<br>~~ee~~<br>~~oe~~<br>~~ff~~<br>|°C<br>~~ee~~<br>~~ff~~<br>|
|TSTG<br>~~ff~~<br>~~Pe~~|Storage Temperature Range<br>~~ff~~<br>||-55 to 150<br>~~ff~~<br>||
|IS<br>~~ff~~<br>~~PeCe~~|Diode Continuous Forward Current<br>~~ff~~<br>~~Ce~~|TA=25°C<br>~~ff~~<br>~~Ce~~<br>~~es~~|4<br>~~ff~~<br>~~Ce~~<br>~~eee~~|A<br>~~ff~~<br>~~Ce~~|
|ID<br>~~Ce~~<br>~~a~~|Continuous Drain Current<br>~~Ce~~<br>~~a~~|TA=25°C<br>~~Ce~~<br>~~a~~<br>~~es~~|7.5<br>~~Ce~~<br>~~a~~<br>~~eee~~|A<br>~~Ce~~<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~es~~<br>~~ee~~|6<br>~~a~~<br>~~eee~~<br>~~ee~~||
|IDM<br>a<br>~~a~~<br>~~a~~<br>~~eo~~|Pulsed Drain Current<br>~~a~~<br>~~——~~|TA=25°C<br>~~a~~<br>~~es ~~<br>~~ee~~<br>~~——~~|30<br>~~a~~<br> ~~eee~~<br>~~ee~~<br>~~——~~|A<br>~~a~~<br>~~——~~|
|PD<br>~~eo~~<br>~~ee~~|Maximum Power Dissipation<br>~~——~~<br>~~ee~~|TA=25°C<br>~~——~~<br>~~a~~|3.5<br>~~——~~<br>~~ee~~|W<br>~~——~~|
|||TA=70°C<br>~~——~~<br>~~a~~|2.2<br>~~——~~<br>~~ee~~||
|RθJA<br>c<br>~~eo~~<br>~~ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~——~~<br>~~ee~~<br>~~rr~~<br>|t≤10s<br>~~——~~<br>~~a~~<br>~~eee~~<br>~~rr~~<br>|35<br>~~——~~<br>~~ee~~<br>~~eee~~<br>~~ee~~<br>|°C/W<br>~~——~~<br>~~eee~~<br>~~ee~~<br>|
|||SteadyState<br>~~a~~<br>~~rr~~<br>|70<br>~~ee~~<br>~~ee~~<br>|°C/W<br>~~ee~~<br>|
|IAS<br>b<br>~~ee~~<br>~~a es~~|Avalanche Current, Singlepulse<br>~~ee~~<br>~~rr~~<br>~~es~~|L=0.1mH<br>~~a~~<br>~~rr~~<br>~~es~~|10<br>~~ee~~<br>~~ee ~~<br>~~es~~|A<br> ~~ee~~<br>~~es~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Singlepulse|L=0.1mH|5|mJ|
Note a：Pulse width limited by maximum junction temperature. Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). 2 Note c：Surface Mounted on 1in pad area.
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
## **SM2054NSD**
**Electrical Characteristics** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~RG~~|**Parameter**<br>~~RG~~|**Test Conditions**<br>~~RG~~|**Test Conditions**<br>~~RG~~|**Min.**<br>~~RG~~|**Typ.**<br>~~RG~~|**Max.**<br>~~RG~~|**Unit**<br>~~RG~~|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~RG~~<br>~~Ce~~||||||||
|BVDSS<br>~~Ce~~<br>~~a ss~~|Drain-Source Breakdown Voltage<br>~~Ce~~<br>~~ss~~|VGS=0V, IDS=250µA<br>~~Ce~~<br>~~ss~~<br>~~ee~~||20<br>~~Ce~~<br>~~ss~~|-<br>~~Ce~~<br>~~ss~~|-<br>~~Ce~~<br>~~ss~~|V<br>~~Ce~~<br>~~ss~~|
|IDSS<br>~~a~~|Zero Gate Voltage Drain Current<br>~~a~~|VDS=16V, VGS=0V<br>TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~||-<br>~~a~~|-<br>~~a~~|1<br>~~a~~|µA<br>~~a~~|
||||TJ=85°C<br>~~a~~<br>~~ee~~<br>~~a~~|-<br>~~a~~|-<br>~~a~~|30<br>~~a~~||
|VGS(th)<br>~~a~~<br>~~PR~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~ee~~<br>~~ee~~||0.5<br>~~ee~~|0.75<br>~~ee~~|1<br>~~ee~~|V|
|IGSS<br>~~PR~~|Gate Leakage Current|VGS=±12V, VDS=0V<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~|±10<br>~~ee~~<br>~~ee~~|µA|
|RDS(ON)<br>d <br>~~PR~~|Drain-Source On-state Resistance|VGS=10V, IDS=7.5A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|17.5<br>~~ee~~<br>~~ee~~<br>~~ee~~|21<br>~~ee~~<br>~~ee~~|mΩ|
|||VGS=4.5V, IDS=6A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|18.5<br>~~ee~~<br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|23<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|||VGS=2.5V, IDS=3A<br>~~es~~||-<br>~~ee ~~<br>~~es~~<br>~~ee~~|27<br> ~~ee~~<br>~~es~~<br>~~ee~~|36<br>~~es~~<br>~~ee~~||
|**Diode Characteristics**<br>~~ee ee ee~~<br>~~Ce~~||||||||
|VSD<br>d<br>~~a~~<br>~~**a**~~|Diode Forward Voltage<br>|ISD=4A, VGS=0V<br><br>~~a~~||-<br><br>~~oe~~|0.8<br><br>~~oe~~|1.3<br><br>~~oe~~|V<br><br>~~oe~~|
|trr<br>~~es~~<br>~~**a**~~|Reverse Recovery Time<br>~~es~~|ISD=7.5A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~||-<br>~~es~~<br>~~oe~~|9<br>~~es~~<br>~~oe~~<br>~~|~~|-<br>~~es~~<br>~~oe~~<br>~~|~~|ns<br>~~es~~<br>~~oe~~|
|Qrr<br>~~es~~<br>~~**a**~~|Reverse Recovery Charge<br>~~es~~|||-<br>~~es~~<br>~~oe~~<br>~~pt~~|2.5<br>~~es~~<br>~~oe~~<br>~~pt~~<br>~~|~~|-<br>~~es~~<br>~~oe~~<br>~~pt~~<br>~~|~~|nC<br>~~es~~<br>~~oe~~<br>~~pt~~|
|**Dynamic Characteristics**<br>e<br>~~a~~<br>~~oe oe~~<br>~~**a**~~<br>~~|~~||||||||
|RG<br>~~a~~<br>~~ee~~|Gate Resistance<br>~~a~~|VGS=0V,VDS=0V,f=1MHz<br>~~a~~<br>~~|~~||-<br>~~a~~<br>~~|~~<br>~~|~~|1.7<br>~~a~~|-<br>~~a~~|Ω<br>~~a~~|
|Ciss<br>~~a~~<br>~~ee~~<br>~~ee~~|Input Capacitance<br>~~a~~<br>~~ee~~|VGS=0V,<br>VDS=10V,<br>Frequency=1.0MHz<br>~~a~~<br>~~|~~<br>~~|~~||-<br>~~a~~<br>~~|~~<br>~~|~~<br>~~pf~~|400<br>~~a~~<br>~~pf~~|520<br>~~a~~<br>~~pf~~|pF<br>~~a~~|
|Coss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~pf~~<br>~~pt~~|85<br>~~pf~~<br>~~pt~~|-<br>~~pf~~<br>~~pt~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~pf~~<br>~~pt~~<br>~~|~~<br>~~|~~|75<br>~~pf~~<br>~~pt~~|-<br>~~pf~~<br>~~pt~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~a~~|Turn-on Delay Time<br>~~ee~~|VDD=10V, RL=10Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~pt~~<br>~~|~~<br>~~|~~<br>~~Ff~~|3.5<br>~~pt~~<br>~~Ff|~~|6.5<br>~~pt~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~|~~<br>~~|~~<br>~~Ff~~<br>~~pf~~|14<br>~~Ff|~~<br>~~pf~~|25<br>~~|~~<br>~~pf~~||
|td(OFF)<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~Ff~~<br>~~pf~~<br>~~|~~<br>~~|~~|20<br>~~Ff |~~<br>~~pf~~|36<br>~~|~~<br>~~pf~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time|||-<br>~~pf~~<br>~~|~~<br>~~|~~|4<br>~~pf~~|7<br>~~pf~~||
|**Gate Charge Characteristics**<br>e<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~PC~~||||||||
|Qg<br>~~a~~|Total Gate Charge<br>~~ee~~|VDS=10V, VGS=4.5V,<br>IDS=7.5A<br>~~ee~~<br>~~|~~||-<br>~~|~~|5.5<br>|-<br>|nC|
|Qg<br>~~a~~<br>~~re~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=10V, VGS=10V,<br>IDS=7.5A<br>~~ee~~<br>~~|~~<br>~~ee~~||-<br>~~||~~<br>~~pf~~|11.5<br>~~|~~<br>~~pf~~|15<br>~~|~~<br>~~pf~~||
|Qgs<br>~~a~~<br>~~re~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~||~~<br>~~pf~~|0.3<br>~~|~~<br>~~pf~~|-<br>~~|~~<br>~~pf~~||
|Qgd<br>~~re ~~<br>~~ee~~|Gate-Drain Charge<br> ~~ee~~|||-<br>~~|~~<br>~~pf~~<br>~~pt~~|2.6<br>~~|~~<br>~~pf~~<br>~~pt~~|-<br>~~|~~<br>~~pf~~<br>~~pt~~||
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
## **SM2054NSD**
## **Typical Operating Characteristics**
**Power Dissipation**
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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25 o C<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>100<br>10<br>300µs<br>1 1ms<br>10ms<br>100ms<br>DC<br>0.1<br>TA=25oC<br>0.01 “A<br>0.01 0.1 1 10 100<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Drain Current**
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8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>T A =25 o C,V G =10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
## **Thermal Transient Impedance**
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3<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.02<br>0.01<br>0.1<br>Single Pulse<br>Mounted on 1in2 pad<br>0.01 RθJA : 35 oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
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SM2054NSD<br>Typical Operating Characteristics (Cont.)<br>Output Characteristics Drain-Source On Resistance<br>24 60<br>VGS=3,4,5,6,7,8,9,10V<br>20 50<br>16 40<br>2V<br>12 30 V GS =2.5V<br>1.8V<br>V =4.5V<br>8 20 GS<br>V =10V<br>1.5V GS<br>4 10<br>0 0 -<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>120 1.6<br>IDS=7.5A I DS =250µA<br>1.4<br>100<br>1.2<br>80<br>1.0<br>60<br>0.8<br>40<br>0.6<br>20<br>0.4<br>0 0.2 ;<br>1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
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## **SM2054NSD**
## **Typical Operating Characteristics (Cont.)**
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Drain-Source On Resistance Source-Drain Diode Forward<br>1.8<br>V =10V<br>GS 30<br>1.6 IDS =7.5A<br>1.4 10<br>T =150 o C<br>1.2 j<br>1.0<br>T =25oC<br>0.8 1 j<br>0.6<br>0.4<br>0.2 RON@Tj=25 o C: 17.5mΩ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5<br>Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>720 10<br>Frequency=1MHz V =10V<br>DS<br>640 9 I =7.5A<br>DS<br>8<br>560<br>7<br>480<br>6<br>400 [a] Ciss<br>5<br>320<br>4<br>240<br>3<br>160<br>2<br>Crss Coss<br>80 1<br>0 0 a<br>0 4 8 12 16 20 0 2 4 6 8 10 12<br>VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>Normalized On Resistance IS<br>C - Capacitance (pF) - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
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## **SM2054NSD**
## **Avalanche Test Circuit and Waveforms**
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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>
## **Switching Time Test Circuit and Waveforms**
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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
## **SM2054NSD**
## **Package Information**
## **SOT-89**
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**----- Start of picture text -----**<br>
D A -T- SEATING PLANE <10 mils<br>[_<br>D1 C<br>: e<br>e1<br>E E1<br>H<br>L<br>**----- End of picture text -----**<br>
B1 B
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Pp SOT-89 RECOMMENDED LAND PATTERN<br>SYM ee MILLIMETERS INCHES<br>BO<br>SSS L MIN. MAX. MIN. MAX. 1.8<br>A 1.40 1.60 0.055 0.063<br>ee ee ao<br>B 0.44 0.56 0.017 0.022<br>ee B1 0.36 0.48 0.014 0.019 They<br>C 0.35 0.44 0.014 0.017<br>D 4.40 4.60 0.173 0.181<br>D1 1.62 1.83 0.064 0.072<br>E 2.29 2.60 0.090 0.102<br>1.5<br>ee ee oe<br>ee E1 2.13 2.29 0.084 0.090 +<br>e 1.50 BSC 0.059 BSC<br>e1 3.00 BSC 0.118 BSC<br>—————ee<br>H 3.94 4.25 0.155 0.167<br>ee UNIT: mm<br>L 0.89 1.20 0.035 0.047<br>se<br>Note : Follow JEDEC TO-243 AA.<br>3<br>2.375<br>1.2<br>**----- End of picture text -----**<br>
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RECOMMENDED LAND PATTERN<br>**----- End of picture text -----**<br>
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
## **SM2054NSD**
## **Carrier Tape & Reel Dimensions**
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4 foe OD0 P0 P2 P1 @| A |<br>SSS}<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-89**|178.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 12.0±0.30|1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.404.80±0.20|4.50±0.20|1.80±0.20|
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
**SM2054NSD**
## **Taping Direction Information**
## **SOT-89**
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**----- Start of picture text -----**<br>
USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>
## **Classification Profile**
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
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## **SM2054NSD**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~Ss~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———{—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
_www.sinopowersemi.com_
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - October, 2013
Updated at February 12, 2024
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