SM1MA151WKT1G

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**SURFACE MOUNT** 

## Common Cathode Silicon Dual Switching Diodes M1MA151WK, M1MA152WK 

These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. 

## **SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40 V/80 V 100 mA** 

**SC−59 CASE 318D STYLE 3** 

## **Features** 

- Fast trr, < 3.0 ns 

Low CD, < 2.0 pFD, < 2.0 pF, < 2.0 pF 3 CATHODE S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant **MAXIMUM RATINGS** (TA = 25 ° C) 1 ANODE 2 **Rating Symbol Value Unit** ~~a~~ Reverse Voltage VR M1MA151WK 40 Vdc **MARKING DIAGRAM** M1MA152WK 80 Peak Reverse Voltage VRM M1MA151WK 40 Vdc Mx M M1MA152WK 80 Forward Current IF Single 100 mAdc Mx = Device Code Dual 150 x =T for 151 Peak Forward Current IFM U for 152 Single 225 mAdc M = Date Code* Dual 340 = Pb−Free Package Peak Forward Surge Current IFSM (Note: Microdot may be in either location) Single (Note 1) 500 mAdc *Date Code orientation may vary depending up- ~~=~~ Dual 750 on manufacturing location. **THERMAL CHARACTERISTICS Rating Symbol Max Unit ORDERING INFORMATION** Power Dissipation PD 200 mW Junction Temperature TJ 150 ° C **Device Package Shipping**[†] Storage Temperature Tstg −55 to +150 ° C M1MA151WKT1G (Pb−Free)SC−59 Tape & Reel3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the SM1MA151WKT1G SC−59 3,000 / device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel assumed, damage may occur and reliability may be affected. t = 1 sec M1MA152WKT1G SC−59 3,000 / (Pb−Free) Tape & Reel NSVM1MA152WKT1G SC−59 3,000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

- Low CD, < 2.0 pFD, < 2.0 pF, < 2.0 pF 

- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free and are RoHS Compliant 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. t = 1 sec 

Publication Order Number: 

**1** 

© Semiconductor Components Industries, LLC, 2015 **October, 2024 − Rev. 13** 

**M1MA151WKT1/D** 

**M1MA151WK, M1MA152WK** 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C) 

~~sO~~ **Characteristic Symbol Condition Min Max Unit** Reverse Voltage Leakage Current IR M1MA151WK VR = 35 V − 0.1 Adc M1MA152WK VR = 75 V − 0.1 ~~es~~ Forward Voltage ~~ee~~ VF IF = 100 mA ~~ee eee~~ − 1.2 Vdc ~~CO~~ Reverse Breakdown Voltage VR M1MA151WK IR = 100 A 40 − Vdc M1MA152WK 80 − ~~es~~ Diode Capacitance CD VR = 0, f = 1.0 MHz − 2.0 pF ~~a ee eee~~ Reverse Recovery Time (Figure 1) trr IF = 10 mA, VR = 6.0 V, − 3.0 ns (Note 2) RL = 100 Irr = 0.1 IR 2. ~~ee~~ trr Test Circuit ~~ee ee~~ 

## **RECOVERY TIME EQUIVALENT TEST CIRCUIT** 

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INPUT PULSE OUTPUT PULSE<br>tr tp trr<br>}-- O<br>IF t<br>t<br>3I<br>10%<br>3 I RL HA<br>A Irr = 0.1 IR<br>90% IF = 10 mA<br>VR tp = 2 s u RVRL = 100  = 6 V Q<br>tr = 0.35 ns<br>**----- End of picture text -----**<br>


**Figure 1. Reverse Recovery Time Equivalent Test Circuit** 

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**M1MA151WK, M1MA152WK** 

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1000 100<br>TA = 150 ° C<br>10<br>Seeneas aaSa== = == eS SS<br>100<br>1<br>ee =<br>0.1<br>10 TA = 25 ° C<br>0.01<br>0.001<br>1 Sa<br>TA = −55 ° C<br>0.0001<br>155 ° C 25 ° C TA = −55 ° C<br>0.1 0.00001<br>A A OE L LC S<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 10 20 30 40 50 60 70 80<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 2. Forward Voltage Figure 3. Reverse Leakage<br>0.64<br>0.62<br>{| | | | tf<br>0.6<br>Nee<br>0.58 BNE Ree<br>0.56<br>0.54 pt|Pent| ft<br>0.52<br>{| | |Poe<br>0.5 | | |] | tettt tt |<br>0 1 2 3 4 5 6 7 8<br>VR, REVERSE VOLTAGE (V)<br>A)<br>, REVERSE CURRENT (<br>, FORWARD CURRENT (mA)IF IR<br>, DIODE CAPACITANCE (pF)<br>d<br>C<br>**----- End of picture text -----**<br>


**Figure 4. Diode Capacitance** 

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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

## **SC−59−3 2.90x1.50x1.15, 1.90P** CASE 318D ISSUE J 

## DATE 15 FEB 2024 

## **GENERIC MARKING DIAGRAM*** 

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XXX M<br>1<br>**----- End of picture text -----**<br>


XXX = Specific Device Code M = Date Code = Pb−Free Package* 

(*Note: Microdot may be in either location) 

- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking. 

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STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE<br>2. EMITTER 2. N.C. 2. ANODE<br>3. COLLECTOR 3. CATHODE 3. CATHODE<br>STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. CATHODE 2. CATHODE<br>3. ANODE 3. ANODE 3. ANODE/CATHODE<br>**----- End of picture text -----**<br>


Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

## **DOCUMENT NUMBER: 98ASB42664B** 

## **DESCRIPTION: SC−59−3 2.90x1.50x1.15, 1.90P** 

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