SM1F08NSU

SM1F08NSU, Single MOSFET, N Channel, 150V, TO-252-2

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 150
Package: View
VGS (±V): 25
VTH(V) typ.: 3
ID (A) TA=25: 3
ID (A) TC=25: 14
Rg (Ω) typ.: 2.8
Ciss (pF) typ.: 850
Coss (pF) typ.: 70
Crss (pF) typ.: 20
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 110
Delivery and price
Units per pack	1
Price	Ask for quotation
Current stock	10+
Lead time	30 days
Datasheet
**®** ~~er WA~~ 

**SM1F08NSU** 

N-Channel Enhancement Mode MOSFET ~~a~~ 

## **Features** 

## **Pin Description** 

- 150V/14A, 

- RDS(ON)= 110mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available 

   - (RoHS Compliant) 

## **Applications** 

- Power Management in TV Converter. 

- DC-DC Converter. 

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Top View of TO-252-3 

N-Channel MOSFET 

## **Ordering and Marking Information** 

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SM1F08NS Package Code<br>    U : TO-252-3<br>Assembly Material Operating Junction Temperature Range<br>Handling Code     C : -55  to 150  [o] C<br>Handling Code<br>Temperature Range<br>    TR : Tape & Reel (2500ea/reel)<br>Package Code<br>Assembly Material<br>    G : Halogen and Lead Free Device<br>SM1F08NS  U : SM1F08NS XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br>


Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

**®** sinopower MA 

## **SM1F08NSU** 

## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~|**Parameter**<br>~~a~~|**Rating**<br>~~a~~|**Unit**<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**<br>~~ae~~<br>~~a~~|||||
|VDSS<br>~~es~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||150<br>~~es~~<br>~~ae~~<br>|V<br>~~es~~<br>~~ae~~<br>|
|VGSS<br>~~es~~<br>~~a~~|Gate-Source Voltage<br>~~es~~<br>||±25<br>~~es~~<br>~~ae~~<br>||
|TJ<br>~~aEE~~|Maximum Junction Temperature<br>~~EE~~||150<br>~~ae~~<br>~~EE~~|°C<br>~~ae~~<br>~~EE~~|
|TSTG<br>~~EE~~<br>~~a~~|Storage Temperature Range<br>~~EE~~<br>~~ee~~||-55 to 150<br>~~EE~~<br>~~ee~~||
|IS<br>~~a~~|Diode Continuous Forward Current|TC=25°C|7|A|
|ID<br>~~a~~|Continuous Drain Current<br>|TC=25°C<br>~~ee~~<br>|14<br>~~ee~~<br>|A<br><br>~~eee~~|
|||TC=100°C<br>~~ee~~<br>|9<br>~~ee~~<br>||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>|TC=25°C<br>~~ee ~~<br><br>~~ee~~|42<br> ~~ee~~<br><br>~~eee~~||
|PD<br>~~Se~~|Maximum Power Dissipation<br>~~Se~~|TC=25°C<br>~~Se~~<br>~~ee~~|54<br>~~Se~~<br>~~eee~~|W<br>~~Se~~<br>~~eee~~|
|||TC=100°C<br>~~Se~~<br>~~ee~~<br>~~ee~~|21<br>~~Se~~<br>~~eee~~<br>~~ee~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ee ~~<br>~~ee~~||2.3<br> ~~eee~~<br>~~ee~~|°C/W<br>~~eee~~<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~ee~~|3<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~ee~~|2.4<br>~~ee~~<br>~~ee~~||
|PD<br>~~el~~<br>~~a~~|Maximum Power Dissipation<br>~~el~~<br>|TA=25°C<br>~~ee ~~<br>~~el~~<br>~~ee~~<br>|2.5<br> ~~ee~~<br>~~el~~<br>~~ee~~<br>|W<br>~~el~~<br>|
|||TA=70°C<br>~~el~~<br>~~ee~~<br>|1.6<br>~~el~~<br>~~ee~~<br>||
|RθJA<br>c<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~<br>~~a~~||50<br>~~ee~~<br>~~a~~|°C/W<br>~~a~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse<br>~~a~~<br>~~a~~|L=0.5mH<br>~~a~~<br>~~a~~|4.5<br>~~a~~<br>~~a~~|A<br>~~a~~<br>~~a~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse<br>~~a~~|L=0.5mH<br>~~a~~|5<br>~~a~~|mJ<br>~~a~~|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

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**®** sinopower WN 

## **SM1F08NSU** 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|~~a~~|~~es~~|||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|**Static Characteristics**<br>~~a~~<br>~~es~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||150<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=120V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA||2|3|4|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current|VGS=±25V, VDS=0V||-|-|±100|nA|
|RDS(ON)<br>d <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=7A||-|90|110|mΩ|
|**Diode Characteristics**||||||||
|VSD<br>d<br>~~a~~<br>~~a~~|Diode Forward Voltage<br>|ISD=3A, VGS=0V<br><br>~~a~~||-<br><br>~~ee~~|0.8<br><br>~~oe oe~~|1.3<br><br>~~oe~~|V<br><br>~~oe~~|
|trr<br>~~es~~<br>~~a~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~|ISD=7A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~ee~~||-<br>~~es~~<br>~~ee~~<br>~~Pot~~|44<br>~~es~~<br>~~oe oe~~<br>~~Pot~~|-<br>~~es~~<br>~~oe~~<br>~~Pot~~|ns<br>~~es~~<br>~~oe~~<br>~~Pot~~|
|Qrr<br>~~es~~<br>~~a~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~ee~~<br>~~Pot~~|89<br>~~es~~<br>~~oe oe~~<br>~~Pot~~|-<br>~~es~~<br>~~oe~~<br>~~Pot~~|nC<br>~~es~~<br>~~oe~~<br>~~Pot~~|
|**Dynamic Characteristics**<br>e<br>~~a~~<br>~~ee oe oe~~<br>~~a~~<br>~~ee~~<br>~~Pot~~<br>~~PR~~||||||||
|RG<br>~~PR~~<br>~~es~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~||-<br>~~pf~~|2.8<br>~~pf~~|-<br>~~pf~~|Ω|
|Ciss<br>~~PR~~<br>~~es~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~|~~<br>~~|~~||-<br>~~pf~~<br>~~Ff~~|850<br>~~pf~~<br>~~Ff~~|1100<br>~~pf~~<br>~~Ff~~|pF|
|Coss<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~pf~~<br>~~Ff~~<br>~~|~~|70<br>~~pf~~<br>~~Ff~~<br>|-<br>~~pf~~<br>~~Ff~~<br>||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~Ff~~<br>~~|||~~<br>~~||~~|20<br>~~Ff~~<br>~~||~~<br>~~|~~|-<br>~~Ff~~<br>~~||~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~|~~<br>~~|~~<br>~~ee~~<br>~~|~~||-<br>~~|||~~<br>~~||~~|14<br>~~||~~<br>~~|~~|26<br>~~||~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~||~~<br>~~||~~<br>~~Ff~~<br>~~|~~|6<br>~~||~~<br>~~|~~<br>~~Ff~~<br>|11<br>~~||~~<br>~~|~~<br>~~Ff~~<br>||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ce~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~| |~~<br>~~Ff~~<br>~~||~~<br>~~|~~|22<br>~~|~~<br>~~Ff~~<br>~~|~~|40<br>~~|~~<br>~~Ff~~<br>~~|~~||
|tf<br>~~ee~~<br>~~es~~<br>~~ce~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~Ff~~<br>~~||~~<br>~~|~~|6<br>~~Ff~~<br>~~|~~|11<br>~~Ff~~<br>~~|~~||
|**Gate Charge Characteristics**<br>e<br>~~|~~<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~cea~~<br>~~ee~~<br>~~Pf~~||||||||
|Qg<br>~~cea~~<br>~~ee~~|Total Gate Charge<br>~~ee~~<br>~~ee~~|VDS=75V, VGS=10V,<br>IDS=7A<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~|~~||-<br>~~|~~<br>~~Pf~~<br>~~|~~|14<br>~~Pf~~<br>|20<br>~~Pf~~<br>|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~Pf~~<br>~~|tT~~<br>~~|~~|4.8<br>~~Pf~~<br>~~tT~~<br>|-<br>~~Pf~~<br>~~tT~~<br>||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~|~~<br>~~|tT~~|3<br><br>~~tT~~|-<br><br>~~tT~~||



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## **SM1F08NSU** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

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60<br>50<br>40<br>30<br>20<br>10<br>TC=25oC<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Drain Current** 

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16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>TC=25 o C,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

**Thermal Transient Impedance** 

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100 2<br>1 Duty = 0.5<br>0.2<br>100µs 0.1<br>0.1<br>10 0.05<br>0.02<br>0.01<br>0.01<br>1ms<br>1<br>1E-3<br>Single Pulse<br>0.1 TC=25oC DC 10ms 1E-4 RθJC :2.3oC/W<br>0.1 1 10 100 500 1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1F08NSU** 

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## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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30<br>VGS=6,7,8,9,10V<br>5.5V<br>25<br>20<br>15<br>5V<br>10<br>5<br>4.5V<br>0<br>0 2 4 6 8<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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Gate-Source On Resistance<br>210<br>I =7A<br>DS<br>180<br>150<br>120<br>90<br>60<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


**Drain-Source On Resistance** 

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180<br>160<br>140<br>120<br>V =10V<br>100 GS<br>80<br>60<br>40<br>20<br>0 5 10 15 20<br>ID - Drain Current (A)<br>[os] Gate Threshold Voltage<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>2.0<br>IDS=250µA<br>1.5<br>1.0<br>0.5<br>0.0 i<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1F08NSU** 

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## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

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2.5<br>V  = 10V<br>GS<br> I  = 7A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 90mΩ<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>1200<br>Frequency=1MHz<br>1000<br>Ciss<br>suesevete<br>800<br>600<br>400<br>200<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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40<br>10<br>T =150 o C<br>j<br>T =25oC<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 75V<br>9 DS<br> I = 7A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 3 6 9 12 15<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM1F08NSU** 

## **Avalanche Test Circuit and Waveforms** 

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VDS L tp VDSX(SUS)<br>f VDS<br>DUT<br>IAS<br>RG<br>VDD<br>VDD<br>EAS<br>tp IL<br>0.01 Ω<br>tAV<br>Switching Time Test Circuit and Waveforms<br>VDS<br>RD<br>VDS<br>DUT 90%<br>VGS<br>RG<br>e VDD<br>10%<br>tp VGS<br>ge td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

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**®** 

## **SM1F08NSU** 

## **Package Information** 

**TO-252-3** 

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E A<br>b3 c2 E1<br>t<br>c<br>b e<br>SEE VIEW A<br>GAUGE PLANE SEATING PLANE<br>L<br>L3<br>D1<br>D<br>H<br>L4<br>0.25 A1<br>0<br>**----- End of picture text -----**<br>


VIEW A 

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po TO-252-3 RECOMMENDED LAND PATTERN<br>SYM MILLIMETERS INCHES<br>BO 6.25 MIN.<br>L MIN. MAX. MIN. MAX.<br>A 2.18 2.39 0.086 0.094<br>===—<br>A1 - 0.13 - 0.005<br>b 0.50 0.89 0.020 0.035<br>————— b3 4.95 5.46 0.195 0.215 i 6.8 MIN.<br>c 0.46 0.61 0.018 0.024<br>c2 0.46 0.89 0.018 0.035<br>D 5.33 6.22 0.210 0.245 6.6<br>D1 4.57 6.00 0.180 0.236<br>E 6.35 6.73 0.250 0.265<br>co a e 1<br>E1 3.81 6.00 0.150 0.236 3 MIN.<br>| Ig | gt<br>ee e 2.29 BSC 0.090 BSC by<br>H 9.40 10.41 0.370 0.410 2.286<br>L 0.90 1.78 0.035 0.070<br>1.5 MIN.<br>L3 0.89 2.03 0.035 0.080<br>4.572<br>L4 - 1.02 - 0.040<br>————— a<br>—— 0 0° 8° 0° 8° UNIT: mm<br>Note : Follow JEDEC TO-252 .<br>**----- End of picture text -----**<br>


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## **SM1F08NSU** 

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®<br>**----- End of picture text -----**<br>


## **Carrier Tape & Reel Dimensions** 

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a a OD0 a: P0 P2 fe P1 8] - A<br>Foca est<br>K0 B A0 OD1 B A<br>SECTION A-A<br>aai SECTION B eee -B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>


|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**TO-252-3**|330.0±<br>2.00|50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.20<br>1.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.00<br>1.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.40<br>6.80±0.20|10.40±<br>0.20|2.50±0.20|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

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sinopower **®** YX 

**SM1F08NSU** 

## **Taping Direction Information** 

**TO-252-3** 

USER DIRECTION OF FEED 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

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10 

**®** 

## **SM1F08NSU** 

## **Classification Reflow Profiles** 

|**Profile Feature**<br>**Sn-Pb Eutectic Assembly**|**Profile Feature**<br>**Sn-Pb Eutectic Assembly**||**Pb-Free Assembly**|
|---|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)<br>100°C<br>150°C<br>60-120 seconds|||150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)<br>3°C/second max.|||3°C/second max.|
|Liquidous temperature (TL)<br>183°C|||217°C|
|Time at liquidous (tL)<br>60-150 seconds|||60-150 seconds|
|Peak package body Temperature<br>(Tp)*<br>See Classification Temp in table 1|See Classification Temp in table 1||See Classification Temp in table 2|
|Time (tP)** within 5°C of the specified<br>classification temperature (Tc)<br>20** seconds|||30** seconds|
|Average ramp-down rate (Tpto Tsmax)<br>6°C/second max.|||6°C/second max.|
|Time 25°C to peak temperature<br>6 minutes max.|||8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.||||
|**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|
|Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)||||
|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm3 **<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=—=SS===~~||||
|Table 2. Pb-free Process – Classification Temperatures (Tc)||||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6 mm<br>260°C<br>260°C<br>260°C<br>1.6 mm – 2.5 mm<br>260°C<br>250°C<br>245°C<br>≥2.5 mm<br>250°C<br>245°C<br>245°C<br>~~————————~~||||
|**Reliability Test Program**||||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000 Hrs,100%of VGS max@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~S————~~||||



## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan 

TEL: 886-3-5635818 Fax: 886-3-5642050 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - July, 2014 

_www.sinopowersemi.com_ 

11
Updated at February 12, 2024
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