SM1F08NSFP

**SM1F08NSFP ®** sinopower WN 

N-Channel Enhancement Mode MOSFET po 

## **Features** 

## **Pin Description** 

- 150V/12A, 

- RDS(ON)= 110mΩ(max.) @ VGS= 10V 

- Reliable and Rugged 

- Lead Free and Green Devices Available (RoHS Compliant) 

- 100% UIS + R Tested g 

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Top View of TO-220FP 

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## **Applications** 

- DC-DC Converter Switching for Networkong. 

- General Purpose Switching. 

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**Ordering and Marking Information** 

SM1F08NS Package Code FP : TO-220FP Assembly Material Operating Junction Temperature Range C : -55  to 150[o] C Handling Code Handling Code Temperature Range TU : Tube (50ea/tube) Assembly Material Package Code G : Halogen and Lead Free Device ~~c~~ e SM1F08NS  FP : SM1F08NS XXXXX - Lot Code XXXXX Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “ Green ” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

## **SM1F08NSFP** 

## **®** sinopower MA 

**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~a~~<br>~~a~~|**Parameter**<br>~~a~~<br>~~a~~|**Rating**<br>~~a~~<br>~~a~~|**Unit**<br>~~a~~<br>~~a~~|
|---|---|---|---|---|
|**Common Ratings**|||||
|VDSS<br>~~i~~|Drain-Source Voltage<br>~~i~~||150<br>~~i~~|V<br>~~i~~<br>|
|VGSS<br>~~i~~<br>~~a~~|Gate-Source Voltage<br>~~i~~<br>||±25<br>~~i~~<br>||
|TJ<br>~~EE~~|Maximum Junction Temperature<br>~~EE~~||150<br>~~EE~~|°C<br>~~EE~~|
|TSTG<br>~~EE~~<br>~~a~~|Storage Temperature Range<br>~~EE~~<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~EE~~<br>~~ee~~||
|IS<br>~~a~~|Diode Continuous Forward Current<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|6<br>~~ee~~|A<br>~~ee~~|
|ID<br>~~a~~|Continuous Drain Current<br>~~a~~|TC=25°C<br>~~ee~~<br>~~a~~|12<br>~~a~~|A<br>~~ree~~|
|||TC=100°C<br>~~a~~<br>~~a~~|7<br>~~a~~<br>~~a~~||
|IDM<br>a<br>~~a~~|Pulsed Drain Current|TC=25°C<br>~~ree~~|36<br>~~ree~~||
|PD<br>~~a~~|Maximum Power Dissipation|TC=25°C<br>~~ree~~|41<br>~~ree~~|W<br>~~ree~~|
|||TC=100°C<br>~~ree~~<br>~~a~~|16<br>~~ree~~<br>~~a~~||
|RθJC<br>~~a~~|Thermal Resistance-Junction to Case<br>~~ree~~||3<br>~~ree~~|°C/W<br>~~ree~~|
|ID<br>~~a~~|Continuous Drain Current|TA=25°C<br>~~ee~~|2.7<br>~~ee~~|A<br>~~ee~~|
|||TA=70°C<br>~~ee~~<br>~~a~~|2.2<br>~~ee~~<br>~~a~~||
|PD|Maximum Power Dissipation|TA=25°C|2|W|
|||TA=70°C<br>~~a~~|1.28<br>~~a~~||
|RθJA<br> <br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~a~~<br>~~a~~||62.5<br>~~a~~<br>~~a~~|°C/W<br>~~a~~<br>~~a~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse<br>~~a~~<br>~~ee~~|L=0.5mH<br>~~a~~<br>~~ee~~|4.5<br>~~a~~<br>~~ee~~|A<br>~~a~~<br>~~ee~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|5|mJ|



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

## **SM1F08NSFP** 

## **®** sinopower WN 

## **Electrical Characteristics** (TA = 25°C unless otherwise noted) 

|**Symbol**<br>~~a~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~PR~~||||||||
|BVDSS<br>~~PR~~<br>~~Ps~~|Drain-Source Breakdown Voltage<br><br>|VGS=0V, IDS=250µA<br><br>~~ee a~~||150<br><br>~~ee~~|-<br>|-<br>|V<br>|
|IDSS<br>~~PRee~~<br>~~Ps~~|Zero Gate Voltage Drain Current<br>~~ee~~<br>|VDS=120V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~ee a~~||-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~Ps~~|Gate Threshold Voltage<br>|VDS=VGS, IDS=250µA<br>~~ee a~~||2<br>~~ee~~|3|4|V|
|IGSS<br>~~Psa~~|Gate Leakage Current<br>~~a~~<br>~~a~~|VGS=±25V, VDS=0V<br>~~ee a ~~||-<br> ~~ee~~|-|±100|nA|
|RDS(ON)<br>c <br>~~a~~|Drain-Source On-state Resistance<br>~~a~~|VGS=10V, IDS=6A||-|90|110|mΩ|
|**Diode Characteristics**||||||||
|VSD<br>c<br>~~a~~<br>~~rs~~|Diode Forward Voltage<br>~~a~~|ISD=3A, VGS=0V<br>~~a~~||-<br>~~ee~~|0.8<br>~~ee~~|1.3<br>~~oe~~|V|
|trr<br>~~es~~<br>~~rs~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~|ISD=6A, dlSD/dt=100A/µs<br>~~es~~<br>~~a~~<br>~~ee~~||-<br>~~es~~<br>~~ee~~<br>~~Pt~~|44<br>~~es~~<br>~~ee~~<br>~~Pt~~|-<br>~~es~~<br>~~oe~~<br>~~Pt~~|ns<br>~~es~~<br>~~Pt~~|
|Qrr<br>~~es~~<br>~~rs~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~ee~~<br>~~Pt~~|89<br>~~es~~<br>~~ee~~<br>~~Pt~~|-<br>~~es~~<br>~~oe~~<br>~~Pt~~|nC<br>~~es~~<br>~~Pt~~|
|**Dynamic Characteristics**<br>d<br>~~a~~<br>~~ee oe~~<br>~~rs~~<br>~~ee~~<br>~~Pt~~<br>~~PR~~||||||||
|RG<br>~~PR~~<br>~~es~~|Gate Resistance<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~ee~~||-<br>~~pf~~|2.8<br>~~pf~~|-<br>~~pf~~|Ω|
|Ciss<br>~~PR~~<br>~~es~~<br>~~ee~~|Input Capacitance<br>~~ee~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~ee~~<br>~~|~~||-<br>~~pf~~<br>~~FL~~|850<br>~~pf~~<br>~~FL~~|1100<br>~~pf~~<br>~~FL~~|pF|
|Coss<br>~~es~~<br>~~ee~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~pf~~<br>~~FL~~<br>~~|~~|70<br>~~pf~~<br>~~FL~~<br>|-<br>~~pf~~<br>~~FL~~<br>||
|Crss<br>~~ee~~<br>~~ee~~<br>~~re~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~FL~~<br>~~|||~~<br>~~pf~~|20<br>~~FL~~<br>~~||~~<br>~~pf|~~|-<br>~~FL~~<br>~~||~~<br>~~|~~||
|td(ON)<br>~~ee~~<br>~~re~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~|~~<br>~~|~~<br>~~ee~~||-<br>~~|||~~<br>~~pf~~<br>~~|~~|14<br>~~||~~<br>~~pf|~~<br>|26<br>~~||~~<br>~~|~~<br>|ns|
|tr<br>~~re~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~||~~<br>~~pf~~<br>~~|~~~~**|**~~|6<br>~~||~~<br>~~pf|~~<br>~~**|**|~~|11<br>~~||~~<br>~~|~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~es~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~|||-<br>~~pf~~<br>~~|~~~~**|**~~<br>~~||~~<br>~~Ff~~|22<br>~~pf |~~<br>~~**|**|~~<br>~~||~~<br>~~Ff~~|40<br>~~|~~<br>~~|~~<br>~~||~~<br>~~Ff~~||
|tf<br>~~ee~~<br>~~es~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~**|**~~<br>~~||~~<br>~~Ff~~|6<br>~~**|**|~~<br>~~||~~<br>~~Ff~~|11<br>~~|~~<br>~~||~~<br>~~Ff~~||
|**Gate Charge Characteristics**<br>d<br>~~||~~<br>~~es~~<br>~~ee~~<br>~~Ff~~<br>~~a~~<br>~~ee~~<br>~~Pt~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=75V, VGS=10V,<br>IDS=6A<br>~~**|**~~<br>~~|~~||-<br>~~Pt~~<br>~~**|**~~|14<br>~~Pt~~|20<br>~~Pt~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~a~~|Gate-Source Charge<br>~~ee~~|||-<br>~~Pt~~<br>~~**|**~~<br>~~|~~|4.8<br>~~Pt~~<br>|-<br>~~Pt~~<br>||
|Qgd<br>~~ee~~<br>~~a~~|Gate-Drain Charge|||-<br>~~**|**~~<br>~~|TT~~|3<br>~~TT~~|-<br>~~TT~~||



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

## **SM1F08NSFP** 

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## **Typical Operating Characteristics** 

**Power Dissipation** 

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45<br>36<br>27<br>18<br>9<br>TC=25oC<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature ( ° C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>


**Safe Operation Area** 

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100<br>100µs<br>10<br>1ms<br>1<br>0.1 TC=25oC DC 10ms<br>0.1 1 10 100 500<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


**Drain Current** 

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14<br>12<br>10<br>8<br>6<br>4<br>2<br>TC=25 o C,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>Thermal Transient Impedance<br>2<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.1 0.05<br>0.02<br>0.01<br>0.01<br>1E-3<br>Single Pulse<br>1E-4 RθJC :3oC/W<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1 1<br>Square Wave Pulse Duration (sec)<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


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## **SM1F08NSFP** 

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## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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30<br>VGS=6,7,8,9,10V<br>5.5V<br>25<br>20<br>15<br>5V<br>10<br>5<br>4.5V<br>0<br>0 2 4 6 8<br>VDS - Drain - Source Voltage (V)<br> - Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


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Gate-Source On Resistance<br>210<br>I =6A<br>DS<br>180<br>150<br>120<br>90<br>60<br>3 4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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180<br>160<br>140<br>120<br>V =10V<br>100 GS<br>80<br>60<br>40<br>20<br>0 5 10 15 20<br>ID - Drain Current (A)<br>Gate Threshold Voltage<br>[a]<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


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Gate Threshold Voltage<br>2.0<br>IDS=250µA<br>1.5<br>1.0<br>0.5<br>0.0 i<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature ( ° C)<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


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## **SM1F08NSFP** 

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## **Typical Operating Characteristics (Cont.)** 

## **Drain-Source On Resistance** 

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2.5<br>V  = 10V<br>GS<br> I  = 6A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 90mΩ<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature ( ° C)<br>Normalized On Resistance<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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40<br>10<br>T =150oC<br>j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>


**Capacitance** 

**Gate Charge** 

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1050<br>Frequency=1MHz<br>900<br>Ciss<br>750<br>600<br>450<br>300<br>150<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain-Source Voltage (V)<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


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10<br>V = 75V<br>9 DS<br> I = 6A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 3 6 9 12 15<br>QG - Gate Charge (nC)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower WX. 

**SM1F08NSFP** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01Ω<br>**----- End of picture text -----**<br>


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VDSX(SUS)<br>tp<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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**®** sinopower MA 

**SM1F08NSFP** 

## **Disclaimer** 

Sinopower Semiconductor, Inc. (hereinafter “ Sinopower ” ) has been making great efforts to development high quality and better performance products to satisfy all customers ’ needs. However, a product may fail to meet customer ’ s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower ’ s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

sinopower **®** YX 

## **SM1F08NSFP** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

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**®** 

## **SM1F08NSFP** 

## **Classification Reflow Profiles** 

|**Classification Reflow Profiles**|**Classification Reflow Profiles**||
|---|---|---|
|**Profile Feature**<br>**Sn-Pb Eutectic Assembly**||**Pb-Free Assembly**|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)<br>100°C<br>150°C<br>60-120 seconds||150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)<br>3°C/second max.||3°C/second max.|
|Liquidous temperature (TL)<br>183°C||217°C|
|Time at liquidous (tL)<br>60-150 seconds||60-150 seconds|
|Peak package body Temperature<br>(Tp)*<br>See Classification Temp in table 1|See Classification Temp in table 1|See Classification Temp in table 2|
|Time (tP)** within 5°C of the specified<br>classification temperature (Tc)<br>20** seconds||30** seconds|
|Average ramp-down rate (Tpto Tsmax)<br>6°C/second max.||6°C/second max.|
|Time 25°C to peak temperature<br>6 minutes max.||8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.|||
|**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|) is defined as a supplier minimum and a user maximum.|
|Table 1. SnPb Eutectic Process–Classification Temperatures (Tc)|||
|**Package**<br>**Thickness**<br>**Volume mm3 **<br>**<350**<br>**Volume mm**~~**3**~~<br>**≥350**<br><2.5 mm<br>235°C<br>220°C<br>≥2.5 mm<br>220°C<br>220°C<br>~~=—=SS===~~|||
|Table 2. Pb-free Process–Classification Temperatures (Tc)|||
|**Package**<br>**Thickness**<br>**Volume mm3**<br>**<350**<br>**Volume mm3**<br>**350-2000**<br>**Volume mm3**<br>**>2000**<br><1.6 mm<br>260°C<br>260°C<br>260°C<br>1.6 mm–2.5 mm<br>260°C<br>250°C<br>245°C<br>≥2.5mm<br>250 °C<br>245 °C<br>245 °C<br>~~—————_———~~|||
|**Reliability Test Program**|||
|**Test item**<br>**Method**<br>**Description**<br>SOLDERABILITY<br>JESD-22,B102<br>5 Sec,245°C<br>HTRB<br>JESD-22, A108<br>1000 Hrs, 80% of VDS max @ Tjmax<br>HTGB<br>JESD-22,A108<br>1000Hrs,100%of VGSmax@Tjmax<br>PCT<br>JESD-22,A102<br>168 Hrs, 100%RH, 2atm, 121°C<br>TCT<br>JESD-22,A104<br>500 Cycles,-65°C~150°C<br>~~S—————~~|||



## **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2015 

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