SM1F04NSG

SM1F04NSG, Single MOSFET, N Channel, 150V, TO-263-2

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Manufacturer: Sinopower
Product type: Single MOSFETs
Cfg.: N
BV(V): 150
Package: View
VGS (±V): 30
VTH(V) typ.: 4
ID (A) TA=25: 8.6
ID (A) TC=25: 86
Rg (Ω) typ.: 1
Ciss (pF) typ.: 5800
Coss (pF) typ.: 520
Crss (pF) typ.: 90
Tape & Reel: View
Quality Report: View
RON(mΩ max) 10V max.: 13.5
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Datasheet
**SM1F04NSG ®** 

## N-Channel Enhancement Mode MOSFET 

- **Features Pin Description** • 150V/86A, D RDS(ON)= 13.5mΩ(max.) @ VGS= 10V S **•** 100% UIS + R Tested G g 

- **•** Reliable and Rugged Top View of TO-263-2 

- **•** Lead Free and Green Devices Available (RoHS Compliant) D 

## **Features** 

## **Applications** 

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G<br>**----- End of picture text -----**<br>


- Synchronous Rectification. 

- Power Management in Inverter Systems. 

## **Ordering and Marking Information** 

SM1F04NS Package Code G : TO-263-2 Assembly Material Operating Junction Temperature Range C : -55  to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel Assembly Material Package Code G : Halogen and Lead Free Device SM1F04NS  G : SM1F04N XXXXX - Lot Code fc XXXXX ~~|~~ Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). 

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 

S N-Channel MOSFET 

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## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted) 

|**Symbol**<br>~~a~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~|
|---|---|---|---|---|
|**Common Ratings **|||||
|VDSS<br>~~**a**~~|Drain-Source Voltage<br>~~**a**~~||150<br>~~**a**~~|V<br>~~**a**~~<br>~~——————————————EEee~~|
|VGSS<br>~~**a**~~<br>~~——————————————EEee~~|Gate-Source Voltage<br>~~**a**~~<br>~~ee~~<br>~~——————————————EEee~~||±30<br>~~**a**~~<br>~~ee~~<br>~~——————————————EEee~~||
|TJ<br>~~——————————————EEee~~|Maximum Junction Temperature<br>~~——————————————EEee~~||150<br>~~——————————————EEee~~|°C<br>~~——————————————EEee~~|
|TSTG<br>~~——————————————EEee~~<br>~~a ee~~|Storage Temperature Range<br>~~——————————————EEee~~<br>~~ee~~||-55 to 150<br>~~——————————————EEee~~<br>~~ee~~||
|IS<br>~~——————————————EEee~~<br>~~a ee~~<br>~~a~~|Diode Continuous Forward Current<br>~~——————————————EEee~~<br>~~ee~~|TC=25°C<br>~~——————————————EEee~~<br>~~ee~~|80<br>~~——————————————EEee~~<br>~~ee~~|A<br>~~——————————————EEee~~|
|ID<br>~~a~~|Continuous Drain Current|TC=25°C|86||
|IDM<br>~~a ee~~|Pulsed Drain Current<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~es eee~~|300<br>a<br>~~ee~~<br>~~eee~~||
|PD<br>~~ee~~<br>~~a~~<br>~~i~~|Maximum Power Dissipation<br>~~ee~~<br>~~ee~~<br>|TC=25°C<br>~~ee~~<br>~~es eee~~<br>~~ee eee~~|250<br>~~ee~~<br>~~eee~~<br>~~eee~~|W<br>~~ee~~<br>|
|||TC=100°C<br>~~ee~~<br>~~es eee~~<br>~~ee eee~~<br>|100<br>~~ee~~<br>~~eee~~<br>~~eee~~<br>||
|RθJC<br>~~a ~~<br>~~i~~|Thermal Resistance-Junction to Case<br> ~~ee~~<br>|Steady State<br>~~es eee~~<br>~~ee eee~~<br>|0.5<br>~~eee~~<br>~~eee~~<br>|°C/W<br>|
|ID<br> <br>~~i ol~~|Continuous Drain Current<br> ~~ee~~<br>~~ol~~|TA=25°C<br>~~ol~~<br>~~ee eee~~|8.6<br>~~ol~~<br>~~eee~~|A<br>~~ol~~|
|||TA=70°C<br>~~ol~~<br>~~ee eee~~|6.9<br>~~ol~~<br>~~eee~~||
|PD<br>~~er~~<br>~~a~~<br>~~a~~|Maximum Power Dissipation<br>~~er~~<br>~~ee~~<br>|TA=25°C<br>~~ee eee~~<br>~~er~~<br>~~ee~~|2.5<br>~~eee~~<br>~~er~~<br>~~eee~~|W<br>~~er~~<br>|
|||TA=70°C<br>~~er~~<br>~~ee~~<br>|1.6<br>~~er~~<br>~~eee~~<br>||
|RθJA<br>c<br>~~a ~~<br>~~a~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br> ~~ee~~<br>|Steady State<br>~~ee~~<br><br>~~es~~|50<br>~~eee~~<br><br>~~ee~~|°C/W<br>|
|IAS<br>b<br> <br>~~a ee~~<br>~~a~~|Avalanche Current, Single pulse<br> ~~ee~~<br>~~ee~~|L=0.5mH<br>~~ee~~<br>~~es~~|31<br>~~ee~~<br>~~ee~~|A<br>~~ee~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH<br>~~es~~|240<br>~~ee~~|mJ|



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**SM1F04NSG** 

## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted) 

|~~Pe~~||||||||
|---|---|---|---|---|---|---|---|
|**Symbol**<br>~~Pe~~|**Parameter**<br>|**Test Conditions**<br>||**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|**Static Characteristics**<br>~~PeOe~~||||||||
|BVDSS<br>~~a~~|Drain-Source Breakdown Voltage<br>|VGS=0V, IDS=250µA<br>||150<br>|-<br>|-<br>|V<br>|
|IDSS<br>~~aee~~|Zero Gate Voltage Drain Current<br>~~ee~~|VDS=120V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~|~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|-<br>~~ee~~<br>~~|~~|30<br>~~ee~~<br>~~|~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA<br>~~|~~||3<br>~~|~~|4<br>~~|~~|5<br>~~|~~|V|
|IGSS<br>~~a~~<br>~~a~~|Gate Leakage Current|VGS=±30V, VDS=0V||-|-|±100|nA|
|RDS(ON)<br>d <br>~~a~~|Drain-Source On-state Resistance|VGS=10V, IDS=40A||-|11|13.5|mΩ|
|**Diode Characteristics**<br>~~a~~<br>~~Ps~~||||||||
|VSD<br>d<br>~~Ps~~<br>~~ee~~|Diode Forward Voltage<br><br>|ISD=20A, VGS=0V<br><br>~~A~~<br>||-<br><br>~~ee~~|0.8<br><br>~~ee~~|1.3<br>|V<br>|
|trr<br>~~Pses~~<br>~~ee ee~~|Reverse Recovery Time<br>~~es~~<br>~~ee~~|ISD=40A, dlSD/dt=100A/µs<br>~~es~~<br>~~A~~<br>~~ee~~||-<br>~~es~~<br>~~ee~~<br>~~|~~|73<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~es~~<br>~~|~~<br>~~|~~<br>~~|~~|ns<br>~~es~~<br>~~|~~<br>~~|~~|
|Qrr<br>~~es~~<br>~~ee ee~~|Reverse Recovery Charge<br>~~es~~<br>~~ee~~|||-<br>~~es~~<br>~~ee~~<br>~~|~~|250<br>~~es~~<br>~~ee~~<br>~~|~~<br>~~|~~|-<br>~~es~~<br>~~|~~<br>~~|~~<br>~~|~~|nC<br>~~es~~<br>~~|~~<br>~~|~~|
|**Dynamic Characteristics**e<br>~~A~~<br>~~ee~~<br>~~ee ee~~<br>~~|~~<br>~~|~~<br>~~|~~||||||||
|RG<br>~~a~~|Gate Resistance|VGS=0V,VDS=0V,f=1MHz||-|1.0|-|Ω|
|Ciss<br>~~a~~<br>~~ee~~|Input Capacitance|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz||-<br>~~|~~|5800<br>~~|~~|7540<br>~~|~~|pF|
|Coss<br>~~ee~~<br>~~ee~~|Output Capacitance|||-<br>~~|~~<br>~~|~~|520<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~| ~~<br>~~|~~<br>~~|~~<br>~~**|**~~|90<br> ~~|~~<br>~~|~~<br>~~ft~~<br>~~ft~~|-<br>~~|~~<br>~~|~~<br>~~ft~~<br>~~ft~~||
|td(ON)<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~ee~~<br>~~**ee**~~||-<br>~~|~~<br>~~|~~<br>~~**|**~~|32<br>~~|~~<br>~~ft~~<br>~~ft~~<br>~~|~~|58<br>~~|~~<br>~~ft~~<br>~~ft~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~**ee**~~|||-<br>~~| ~~<br>~~**|** ~~<br>~~**|**~~|11<br> ~~ft~~<br> ~~ft~~<br>~~|~~<br>~~**|**~~|20<br>~~ft~~<br>~~ft~~<br>~~|~~<br>~~**|**~~||
|td(OFF)<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~**ee**~~|||-<br>~~**|**~~|68<br>~~|~~<br>~~**|**~~|123<br>~~|~~<br>~~**|**~~||
|tf<br>~~ee ~~<br>~~ee~~|Turn-off Fall Time<br> ~~**ee**~~|||-<br>~~**|**~~|47<br>~~|~~<br>~~**|**~~|85<br>~~|~~<br>~~**|**~~||
|**Gate Charge Characteristics**e<br> ~~**ee**~~<br>~~**|** ~~~~**|**~~<br>~~ee~~<br>~~a~~<br>~~ee~~<br>~~||~~||||||||
|Qg<br>~~a~~<br>~~ee~~|Total Gate Charge<br>~~ee~~|VDS=30V, VGS=10V,<br>IDS=40A<br>~~ee~~||-<br>~~|~~<br>~~|~~|83<br>~~|~~<br>~~|~~|116<br>~~|~~<br>~~|~~|nC|
|Qgs<br>~~a~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge<br>~~ee~~|||-<br>~~| ~~<br>~~|~~<br>~~|~~|34<br> ~~|~~<br>~~|~~<br>~~ft~~|-<br>~~|~~<br>~~|~~<br>~~ft~~||
|Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge|||-<br>~~| ~~<br>~~|~~|18<br> ~~|~~<br>~~ft~~|-<br>~~|~~<br>~~ft~~||



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Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2018 

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## **SM1F04NSG** 

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®<br>**----- End of picture text -----**<br>


## **Typical Operating Characteristics** 

**Power Dissipation** 

## **Drain Current** 

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300 100<br>250<br>80<br>200<br>60<br>150<br>40<br>100<br>20<br>50<br>TC=25oC TC=25oC,VG=10V<br>0 0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)       Tj - Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>1000 3<br>1 Duty = 0.5<br>100µs ai ih 0.2<br>100<br>0.1<br>0.1<br>te 0.05 adi<br>1ms 0.02<br>10<br>0.01<br>10ms 0.01<br>DC<br>1<br>1E-3<br>Single Pulse<br>TC=25oC RθJC :0.5oC/W<br>0.1 /< 1E-4 Ra<br>0.01 0.1 1 10 100 800 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1<br> VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2018 

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**®** 

## **SM1F04NSG** 

## **Typical Operating Characteristics (Cont.)** 

**Output Characteristics** 

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200<br>175 VGS=7,8,9,10V<br>150 6.5V<br>125<br>100<br>75 6V<br>50<br>25 5.5V<br>0<br>0 1 2 3 4 5 6<br> VDS - Drain - Source Voltage (V)<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>


## **Gate-Source On Resistance** 

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35<br>I =40A<br>DS<br>30<br>25<br>20<br>15<br>10<br>5<br>4 5 6 7 8 9 10<br>VGS - Gate - Source Voltage (V)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>**----- End of picture text -----**<br>


## **Drain-Source On Resistance** 

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28<br>24<br>20<br>16<br>V =10V<br>GS<br>12<br>8<br>4<br>0<br>0 40 80 120 160 200<br>ID - Drain Current (A)<br>[_] Gate Threshold Voltage<br>1.6<br>I DS =250µA<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2 _<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage<br>**----- End of picture text -----**<br>


Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2018 

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**SM1F04NSG** 

**®** 

## **Typical Operating Characteristics (Cont.)** 

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**----- Start of picture text -----**<br>
Drain-Source On Resistance<br>3.0<br>V  = 10V<br>GS<br> IDS = 40A<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 11mΩ<br>0.0<br>-50 -25 0 25 50 75 100 125 150<br>  Tj - Junction Temperature (°C)<br>Capacitance<br>7200<br>Frequency=1MHz<br>6300<br>[a] Ciss<br>5400<br>4500<br>3600<br>2700<br>1800<br>900<br>Coss<br>Crss<br>0<br>0 20 40 60 80<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>


**Source-Drain Diode Forward** 

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200<br>100<br>T =150oC<br>10 j<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>V = 30V<br>9 DS<br> I = 40A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 15 30 45 60 75 90<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>


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**®** sinopower N 

**SM1F04NSG** 

## **Typical Operating Characteristics (Cont.)** 

## **BVDSS vs Junction Temperature** 

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1.3<br>IDS=250µA<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>0.7<br>-50 -25 0 25 50 75 100 125 150<br> Tj - Junction Temperature (°C)<br>Normalized Breakdown Voltage<br>**----- End of picture text -----**<br>


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**®** sinopower WA 

**SM1F04NSG** 

## **Avalanche Test Circuit and Waveforms** 

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VDS<br>L<br>DUT<br>RG<br>VDD<br>tp IL<br>0.01 Ω<br>**----- End of picture text -----**<br>


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tp VDSX(SUS)<br>VDS<br>IAS<br>VDD<br>EAS<br>tAV<br>**----- End of picture text -----**<br>


## **Switching Time Test Circuit and Waveforms** 

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VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>d<br>tp<br>**----- End of picture text -----**<br>


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VDS<br>90%<br>10%<br>VGS<br>td(on)  tr td(off)  tf<br>**----- End of picture text -----**<br>


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## **Disclaimer** 

Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. 

All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. 

In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. 

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. 

The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. 

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**®** sinopower Vv 

**SM1F04NSG** 

## **Classification Profile** 

Copyright  Sinopower Semiconductor, Inc. Rev. A.2 - March, 2018 

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**®** 

## **SM1F04NSG** 

## **Classification Reflow Profiles** 

|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||



Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) 

**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~=sS===~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~—————=—~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~—————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service** 

## **Sinopower Semiconductor, Inc.** 

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080 

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