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SM1A33PSU
SM1A33PSU, Single MOSFET, P Channel, -100V, TO-252-2
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- Manufacturer: Sinopower
- Product type: Single MOSFETs
- Cfg.: P
- BV(V): -100
- Package: View
- VGS (±V): 25
- VTH(V) typ.: -2
- ID (A) TA=25: -5.2
- ID (A) TC=25: -38
- Rg (Ω) max.: 6.8
- Rg (Ω) typ.: 3.4
- Ciss (pF) typ.: 2467
- Coss (pF) typ.: 268
- Crss (pF) typ.: 126
- Tape & Reel: View
- RON(mΩ max) 10V max.: 39
- RON(mΩ max) 4.5V max.: 49
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | Ask for quotation |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**SM1A33PSU ®** **==> picture [469 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> ®<br>P-Channel Enhancement Mode MOSFET<br>pO<br>Features Pin Description<br>• -100V/-38A,<br>Drain 4<br> RDS(ON)= 39m Ω (max.) @ VGS=-10V<br> RDS(ON)= 49m Ω (max.) @ VGS=-4.5V 2 3 Source<br>• 100% UIS+Rg Tested . 1 Gate<br>• Reliable and Rugged<br>• Top View of TO-252-2<br>**----- End of picture text -----**<br> - Lead Free and Green Devices Available (RoHS Compliant) **==> picture [41 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>G<br>S<br>**----- End of picture text -----**<br> ## **Applications** - Power Management for Industrial DC / DC - Converters. P-Channel MOSFET ## **Ordering and Marking I nform ation** **==> picture [399 x 123] intentionally omitted <==** **----- Start of picture text -----**<br> SM1A33PS Package Code<br> U : TO-252-2<br>Assembly Material Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Handling Code<br>Temperature Range<br> TR : Tape & Reel<br>Package Code<br>Assembly Material<br> G : Halogen and Lead Free Device<br>SM1A33PS U : SM1A33PS XXXXX - Lot Code<br>XXXXX<br>**----- End of picture text -----**<br> Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free **-** requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to m ake changes to im prove reliability or m anufacturability without notice, and advise custom ers to obtain the latest version of relevant inform ation to verify before placing orders. _ww w.sinopowersem i.com_ 1 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 **®** sinopower WN **SM1A33PSU** **Absolute Maxim um Ratings** (TA = 25 ° C Unless Otherwise Noted) |**Symbol**<br>~~Re~~|**Parameter**<br>~~ee~~|**Parameter**<br>~~ee~~|**Rating**<br>~~ee~~|**Unit**<br>~~ee~~| |---|---|---|---|---| |**Common Ratings**<br>~~Reee~~||||| |VDSS<br>~~a~~<br>~~es~~|Drain-Source Voltage||-100|V| |VGSS<br>~~es~~|Gate-Source Voltage||±25|| |TJ<br>~~es~~<br>~~a ~~<br>~~ae~~|Maximum Junction Temperature<br> ~~ee~~<br>~~ee~~||150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| |TSTG<br>~~ae~~<br>~~ae~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~ee~~|°C<br>~~ee~~<br>~~ee~~| |IS<br>~~ae~~<br>~~ae~~<br>~~Rs~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~<br>~~i~~||-19<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| |IAS<br>a<br>~~ae~~<br>~~Rs~~<br>~~Re~~|Avalanche Current, Single pulse<br>~~ee~~<br>~~i~~<br>~~ee~~|L=0.5mH<br>~~ee~~<br>~~ee~~|-27<br>~~ee~~<br>~~ee~~|A<br>~~ee~~<br>~~ee~~| |EAS<br>a<br>~~Rs~~<br>~~Re~~<br>~~es~~|Avalanche Energy, Single pulse<br>~~i~~<br>~~ee~~|L=0.5mH<br>~~ee~~|182<br>~~ee~~|mJ<br>~~ee~~| |IDP<br>b<br>~~Re~~<br>~~es~~|Pulse Drain Current Tested<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|-152<br>c<br>~~ee~~<br>~~eee~~|A<br>~~ee~~<br>~~eee~~| |ID<br>~~es~~<br>~~a~~<br>~~a~~|Continuous Drain Current<br>~~ee~~<br>~~ee~~|TC=25°C<br>~~ee~~<br>~~ee~~|-38<br>~~ee~~<br>~~eee~~|| |||TC=100°C<br>~~ee~~<br>~~ee~~<br>~~a~~<br>~~eee~~|-24<br>~~ee~~<br>~~eee~~<br>~~a~~<br>~~eee~~|| |PD<br>~~a~~<br>~~es~~|Maximum Power Dissipation<br>~~ee~~<br>|TC=25°C<br>~~ee ~~<br>~~eee~~<br>~~**e**e~~|113<br> ~~eee~~<br>~~eee~~<br>~~ee~~|W<br>~~eee~~| |||TC=100°C<br>~~eee~~<br>~~**e**e~~|45<br>~~eee~~<br>~~ee~~|| |RθJC<br>~~a ~~<br>~~es~~|Thermal Resistance-Junction to Case<br> ~~ee eee~~<br>~~**e**e~~<br>~~e~~<br>~~ee~~||1.1<br>~~eee~~<br>~~ee~~<br>~~ee~~|°C/W<br>~~eee~~<br>~~ee~~| |ID<br>~~es~~<br>~~ee~~<br>~~ee~~|Continuous Drain Current<br><br>~~ee~~<br>|TA=25°C<br>~~**e**e~~<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|-5.2<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~<br>|A<br>~~ee~~<br>~~ee~~<br>~~**e**~~<br>| |||TA=70°C<br>~~ee~~<br>~~ee~~<br>~~ee~~<br><br>~~a~~|-4.1<br>~~ee~~<br>~~ee~~<br>~~e~~~~**e**~~<br><br>~~e~~|| |PD<br>~~ee~~<br>~~a~~|Maximum Power Dissipation<br>~~ee~~|TA=25°C<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~a~~|2.1<br> ~~ee~~<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~<br>~~ee~~|W<br>~~ee~~<br>~~**e**~~<br>~~ee~~| |||TA=70°C<br>~~ee~~<br>~~ee~~<br>~~a~~|1.3<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~<br>~~ee~~|| |RθJA<br>d<br>~~ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~|Steady State<br>~~ee~~<br>~~ee~~<br>~~a~~|60<br>~~e~~~~**e**~~<br>~~ee~~<br>~~e~~<br>~~ee~~|°C/W<br>~~**e**~~<br>~~ee~~| Note c: Wire limited. Note d: R θ JA steady state t=999s. RθJA is measured with the device mounted on 1in[2] , FR-4 board with 2oz. Copper. _ww w.sinopowersem i.com_ 2 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 **®** sinopower WN **SM1A33PSU** **Electrical Characteristics** (TA = 25 ° C Unless Otherwise Noted) |**Symbol**<br>~~a~~|**Parameter**<br>~~es~~|**Test Conditions**<br>~~es~~|**Test Conditions**<br>~~es~~|**Min.**<br>~~es~~|**Typ.**<br>~~es~~|**Max.**<br>~~es~~|**Unit**<br>~~es~~| |---|---|---|---|---|---|---|---| |**Static Characteristics**<br>~~|~~<br>~~ee eee~~<br>~~esee~~|||||||| |BVDSS<br>~~|~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~|~~<br>~~a~~<br>~~ee eee~~|VGS=0V, IDS=-250µA<br>~~|~~<br>~~a~~<br>~~eee~~<br>~~ee ee~~||-100<br>~~|~~<br>~~a~~<br>~~es~~<br>~~ee~~|-<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~ee~~|-<br>~~|~~<br>~~a~~<br>~~ee~~<br>~~ee~~|V<br>~~|~~<br>~~a~~<br>~~ee~~| |IDSS<br>~~ee~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee eee~~<br>~~ee~~<br>|VDS=-80V, VGS=0V<br>TJ=85°C<br>~~eee~~<br>~~ee~~<br>~~ee ee~~<br>~~PE~~<br>||-<br>~~es ~~<br>~~ee~~<br>~~ee~~|-<br> ~~ee~~<br>~~ee~~<br>~~ee~~|1<br>~~ee~~<br>~~ee~~<br>~~ee~~|µA<br>~~ee~~<br>~~ee~~<br>| ||||TJ=85°C<br>~~ee~~<br>~~ee~~<br>~~PE~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~PE~~<br>|-<br>~~ee~~<br>~~ee~~<br>~~PE~~<br>|-30<br>~~ee~~<br>~~ee~~<br>~~PE~~<br>|| |VGS(th)<br>~~ee~~|Gate Threshold Voltage<br>~~es~~|VDS=VGS, IDS=-250µA<br>~~ee ee~~<br>~~PE~~<br>~~es~~<br>~~ee~~||-1<br>~~ee~~<br>~~PE~~<br>~~es~~|-2<br>~~ee~~<br>~~PE~~<br>~~es~~|-3<br>~~ee~~<br>~~PE~~<br>~~es~~|V<br>~~ee~~<br>~~es~~| |IGSS<br>~~ee~~<br>~~a es~~|Gate Leakage Current<br>~~es~~<br>~~es~~|VGS=±25V, VDS=0V<br>~~PE~~<br>~~es~~<br>~~es~~<br>~~ee~~||-<br>~~PE~~<br>~~es~~<br>~~es~~<br>~~—~~|-<br>~~PE~~<br>~~es~~<br>~~es~~<br>~~—~~|±100<br>~~PE~~<br>~~es~~<br>~~es~~<br>~~—~~|nA<br>~~es~~<br>~~es~~<br>~~—~~| |RDS(ON)<br>e <br>~~ee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=-10V, IDS=-20A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~—~~<br>~~es~~|31<br>~~ee~~<br>~~—~~<br>~~ee~~|39<br>~~ee~~<br>~~—~~|mΩ<br>~~ee~~<br>~~—~~| |||VGS=-4.5V,IDS=-10A<br>~~ee~~<br>~~ee~~||-<br>~~ee~~<br>~~—~~<br>~~ee~~<br>~~es~~|36<br>~~ee~~<br>~~—~~<br>~~ee~~<br>~~ee~~|49<br>~~ee~~<br>~~—~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~—~~<br>~~ee~~| |**Diode Characteristics**<br>~~—~~<br>~~es ee~~<br>~~|~~<br>~~rs ee~~<br>~~es~~|||||||| |VSD<br>e<br>~~|~~<br>~~a~~<br>~~SS~~|Diode Forward Voltage<br>~~|~~<br>~~a~~<br>~~rs ee~~<br>~~SS~~|ISD=-1A, VGS=0V<br>~~|~~<br>~~a~~<br>~~ee~~||-<br>~~|~~<br>~~a~~<br>~~es~~|-0.7<br>~~|~~<br>~~a~~|-1<br>~~|~~<br>~~a~~|V<br>~~|~~<br>~~a~~| |trr<br>~~SS~~<br>~~ee~~|Reverse Recovery Time<br>~~rs ee~~<br>~~SS~~<br>~~ee~~|ISD=-20A, dlSD/dt=100A/µs<br>~~ee~~||-<br>~~es~~<br>~~SP~~|60<br>~~SP~~|-<br>~~SP~~|ns<br>~~SP~~| |Qrr<br>~~SS~~<br>~~ee~~|Reverse RecoveryCharge<br>~~SS~~<br>~~ee~~|||-<br>~~SP~~|95<br>~~SP~~|-<br>~~SP~~|nC<br>~~SP~~| |**Dynamic Characteristics**<br>f<br>~~SS~~<br>~~ee~~<br>~~ee~~<br>~~SP~~<br>~~I~~|||||||| |RG<br>~~Ies~~<br>~~ee~~|Gate Resistance<br>~~es~~<br>~~ee~~|VGS=0V,VDS=0V,f=1MHz<br>~~es~~||-<br>~~es~~<br>~~PP~~|3.4<br>~~es~~<br>~~PP~~|6.8<br>~~es~~<br>~~PP~~|Ω<br>~~es~~| |Ciss<br>~~I~~<br>~~ee~~<br>~~a~~|Input Capacitance<br><br>~~ee~~<br>~~ee~~|VGS=0V,<br>VDS=-30V,<br>Frequency=1.0MHz<br><br>~~ee~~<br>~~ee~~<br>~~ee~~||-<br><br>~~PP~~<br>~~Pt~~|2467<br><br>~~PP~~<br>~~Pt~~|3207<br><br>~~PP~~<br>~~Pt~~|pF<br>| |Coss<br>~~ee~~<br>~~a~~<br>~~a~~|Output Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~PP~~<br>~~Pt~~<br>~~Pt~~|268<br>~~PP~~<br>~~Pt~~<br>~~Pt~~|-<br>~~PP~~<br>~~Pt~~<br>~~Pt~~|| |Crss<br>~~a~~<br>~~a~~<br>~~a~~|Reverse Transfer Capacitance<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~Pt~~<br>~~Pt~~<br>~~Pt~~|126<br>~~Pt~~<br>~~Pt~~<br>~~Pt~~|-<br>~~Pt~~<br>~~Pt~~<br>~~Pt~~|| |td(ON)<br>~~a~~<br>~~a~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|VDD=-30V, RL=30Ω,<br>IDS=-1A, VGEN=-10V,<br>RG=6Ω<br>~~ee~~<br>~~ee~~||-<br>~~Pt~~<br>~~Pt~~<br>~~PP~~|15<br>~~Pt~~<br>~~Pt~~<br>~~PP~~|27<br>~~Pt~~<br>~~Pt~~<br>~~PP~~|ns| |tr<br>~~a~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~Pt~~<br>~~PP~~<br>~~SE~~|8<br>~~Pt~~<br>~~PP~~<br>~~SE~~|14<br>~~Pt~~<br>~~PP~~<br>~~SE~~|| |td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~<br>~~ee~~<br>~~ee~~|||-<br>~~PP~~<br>~~SE~~<br>~~PE~~|54<br>~~PP~~<br>~~SE~~<br>~~PE~~|97<br>~~PP~~<br>~~SE~~<br>~~PE~~|| |tf<br>~~ee~~<br>~~ee~~<br>~~eo~~|Turn-off Fall Time<br>~~ee~~<br>~~ee~~|||-<br>~~SE~~<br>~~PE~~|32<br>~~SE~~<br>~~PE~~|58<br>~~SE~~<br>~~PE~~|| |**Gate Charge Characteristics**<br>f<br>~~ee~~<br>~~ee~~<br>~~PE~~<br>~~eoee~~<br>~~Pt~~|||||||| |Qg<br>~~eoee~~<br>~~ee~~|Total Gate Charge|VDS=-50V, VGS=-10V,<br>IDS=-20A||-<br>~~Pt~~<br>~~a~~|54<br>~~Pt~~<br>~~ee~~|76<br>~~Pt~~<br>~~ee~~|nC| |Qgs<br>~~ee~~<br>~~ee~~<br>~~ee~~|Gate-Source Charge|||-<br>~~Pt~~<br>~~a~~<br>~~Pp~~|10<br>~~Pt~~<br>~~ee~~<br>~~Pp~~|-<br>~~Pt~~<br>~~ee~~<br>~~Pp~~|| |Qgd<br>~~ee~~<br>~~ee~~|Gate-Drain Charge|||-<br>~~a ~~<br>~~Pp~~|13<br> ~~ee~~<br>~~Pp~~|-<br>~~ee~~<br>~~Pp~~|| Note e: Pulse test; pulse width ≤ 300 µ s, duty cycle ≤ 2%. Note f: Guaranteed by design, not subject to production testing. _ww w.sinopowersem i.com_ 3 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 sinopower WA **®** **SM1A33PSU** ## **Typical Operating Characteristics** **Power Dissipation** **==> picture [195 x 515] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>100<br>80<br>60<br>40<br>20<br>T =25oC<br>0 C<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>Safe Operation Area<br>500<br>100<br>100 µ s<br>10<br>1ms<br>1 10ms<br>DC<br>0.1 TC=25oC<br>1 10 100 300<br> -VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P<br> - Drain Current (A)<br>D<br>-I<br>**----- End of picture text -----**<br> ## **Drain Current** **==> picture [198 x 515] intentionally omitted <==** **----- Start of picture text -----**<br> 42<br>36<br>30<br>24<br>18<br>12<br>6<br>TC=25 o C,VG=-10V<br>0<br>0 20 40 60 80 100 120 140 160<br> Tj - Junction Temperature (°C)<br>Thermal Transient Impedance<br>2<br>1 Duty = 0.5<br>eae<br>0.2<br>0.1<br>0.1<br>0.05<br>0.02<br>0.01<br>0.01<br>1E-3<br>Single Pulse<br>1E-4 R θ JC :1.1oC/W<br>1E-6 1E-5 1E-4 1E-3 0.01 0.1<br>Square Wave Pulse Duration (sec)<br> - Drain Current (A)<br>D<br>-I<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 _ww w.sinopowersem i.com_ 4 r **®** ” **SM1A33PSU** ## **Typical Operating Characteristics ( Cont.)** **==> picture [432 x 532] intentionally omitted <==** **----- Start of picture text -----**<br> Output Characteristics Drain-Source On Resistance<br>100 60<br>VGS=-4.5,-5,-6,-7,-8,-9,-10V<br>80 50<br>LZ<br>60 -4V 40 V GS =-4.5V<br>V =-10V<br>GS<br>40 30<br>-3.5V<br>20 20<br>3V<br>0 f— 10<br>0 2 4 6 8 0 10 20 30 40 50 60<br>-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>180 1.6<br>IDS=-20A I DS =-250 µ A<br>1.4<br>150<br>1.2<br>120<br>1.0<br>90<br>0.8<br>60<br>0.6<br>30<br>0.4<br>0 iL 0.2<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A)D - On - Resistance (m<br>-I DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R<br>Normalized Threshold Voltage (V)<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 _ww w.sinopowersem i.com_ 5 **SM1A33PSU** **®** ## **Typical Operating Characteristics ( Cont.)** ## **Drain-Source On Resistance** **==> picture [196 x 507] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>V = -10V<br>GS<br> I DS = -20A<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0 Zo RON@Tj=25oC: 31m Ω<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>4500<br>Frequency=1MHz<br>4000<br>3500<br>3000<br>Ciss<br>2500<br>2000<br>1500<br>1000<br>500 Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>-VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br> **Source-Drain Diode Forward** **==> picture [191 x 508] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>o<br>10 Tj=150 C<br>T =25 o C<br>j<br>1<br>0.1<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>-VSD - Source - Drain Voltage (V)<br>Gate Charge<br>10<br>9 V DS = -50V<br> I = -20A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 9 18 27 36 45 54<br>QG - Gate Charge (nC)<br> - Source Current (A)<br>S<br>-I<br> - Gate-Source Voltage (V)<br>GS<br>-V<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 _ww w.sinopowersem i.com_ 6 **®** sinopower WN **SM1A33PSU** ## **Avalanche Test Circuit and W aveform s** **==> picture [167 x 104] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>L<br>DUT<br>RG<br>VDD<br>tp<br>IL<br>0.01 Ω<br>**----- End of picture text -----**<br> **==> picture [159 x 118] intentionally omitted <==** **----- Start of picture text -----**<br> tAV<br>EAS<br>_-- WS<br>VDD<br>IAS<br>VDS<br>tp VDSX(SUS)<br>**----- End of picture text -----**<br> ## **Sw it ching Tim e Test Circuit and W aveform s** **==> picture [167 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> VDS<br>RD<br>DUT<br>VGS<br>RG<br>VDD<br>tp<br>**----- End of picture text -----**<br> **==> picture [145 x 90] intentionally omitted <==** **----- Start of picture text -----**<br> td(on) tr td(off) tf<br>VGS<br>10%<br>90%<br>VDS<br>**----- End of picture text -----**<br> _ww w.sinopowersem i.com_ Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 7 **®** sinopower MA **SM1A33PSU** ## **Disclaim er** Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making great efforts to development high quality and better performance products to satisfy all customers’ needs. However, a product may fail to meet customer’s expectation or malfunction for various situations. All information which is shown in the datasheet is based on Sinopower’s research and development result, therefore, Sinopower shall reserve the right to adjust the content and monitor the production. In order to unify the quality and performance, Sinopower has been following JEDEC while defines assembly rule. Notwithstanding all the suppliers basically follow the rule for each product, different processes may cause slightly different results. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. Sinopower does not grant customers explicitly or implicitly, any license to use or exercise intellectual property or other rights held by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any dispute arising from the use of such technical information. The products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability, such as the failure or malfunction of which any may result in a direct threat to human life or a risk of human injury. Sinopower shall bear no responsibility in any way for use of any of the products for the above special purposes. If a product is intended to use for any such special purpose, such as vehicle, military, or medical controller relevant applications, please contact Sinopower sales representative before purchasing. _ww w.sinopowersem i.com_ 8 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 **SM1A33PSU ®** ~~$$rors~~ **Package I nform at ion** E A b3 c2 E1 ~~+ ee ml qa c~~ b e ~~ie LE~~ SEE VIEW A GAUGE PLANE SEATING PLANE L L VIEW A > **TO-252-2 RECOMMENDED LAND PATTERN** ~~—~~ **SYM MILLIMETERS INCHES BOL MIN. MAX. MIN. MAX.** 6.25 MIN. A 2.18 2.39 0.086 0.094 ~~| Se~~ A1 - 0.13 - 0.005 b 0.50 0.89 0.020 0.035 ~~7,~~ b3 4.95 5.46 0.195 0.215 7 6.8 MIN. ~~ee~~ c 0.46 0.61 0.018 0.024 g Ly c2 0.46 0.89 0.018 0.035 ~~———~~ D 5.33 6.22 0.210 0.245 s 6.6 il D1 4.57 6.00 0.180 0.236 E 6.35 6.73 0.250 0.265 ~~= ae~~ E1 3.81 6.00 0.150 0.236 3 MIN. ~~a~~ e 2.29 BSC 0.090 BSC ~~ae~~ H 9.40 10.41 0.370 0.410 2.286 ~~ee ,~~ L 0.90 1.78 0.035 0.070 1.5 MIN. L3 0.89 2.03 0.035 0.080 4.572 L4 - 1.02 - 0.040 ~~== Fe 0~~ 0° 8° 0° 8° UNIT: mm Note : Follow JEDEC TO-252 . ## **RECOMMENDED LAND PATTERN** **==> picture [46 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> UNIT: mm<br>**----- End of picture text -----**<br> Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 _ww w.sinopowersem i.com_ 9 **®** ## **SM1A33PSU** ## **Carrier Tape & Reel Dim ensions** **==> picture [315 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> ~ f - J OD0 6 P0 éfe P2 P1 ofeF A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br> |**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**| |---|---|---|---|---|---|---|---|---| |**TO-252-2**|330.0±2.00|2.00<br>50 MIN.|16.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|20.2 MIN.|20.2 MIN. 16.0±0.30|1.75±0.10|7.50±0.05| ||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**| ||4.0±0.10|8.0±0.10|2.0±0.05<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.80±0.20|10.40±0.20|2.50±0.20| _ww w.sinopowersem i.com_ 10 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 **®** sinopower VAN **SM1A33PSU** ## **Taping Direction I nform at ion** **TO-252-2** USER DIRECTION OF FEED ## **Classificat ion Profile** Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015 _ww w.sinopowersem i.com_ 11 **SM1A33PSU** **®** ## **Classification Reflow Profiles** |**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**| |---|---|---| |**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds| |Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.| |Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds| |Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2| |p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds| |Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.| |Time 25°C to peak temperature|6 minutes max.|8 minutes max.| |* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.||| * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350** ≥ **350** <2.5 mm 235 ° C 220 ° C ≥ 2.5 mm 220 ° C 220 ° C ~~=—SSS==~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 ° C 260 ° C 260 ° C 1.6 mm – 2.5 mm 260 ° C 250 ° C 245 ° C ~~————~~ ≥ 2.5 mm 250 ° C 245 ° C 245 ° C **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245 ° C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100 % RH, 2atm, 121 ° C ~~———~~ TCT JESD-22, A104 500 Cycles, -65 ° C~150 ° C **Custom er Service** ## **Sinopower Semiconductor, Inc.** 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan TEL: 886-3-5635818 Fax: 886-3-5635080 _ww w.sinopowersem i.com_ 12 Copyright Sinopower Sem iconductor, Inc. Rev. A.1 - May, 2015
Updated at February 12, 2024
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