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SM1A30NSK
SM1A30NSK, Single MOSFET, N Channel, 100V, SOP-8
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Datasheet
**®** sinopower WN
## **SM1A30NSK**
N-Channel Enhancement Mode MOSFET
## **Features**
- 100V/5A,
- RDS(ON)= 70mΩ (Max.) @ VGS=10V
- RDS(ON)= 80mΩ (Max.) @ VGS=4.5V
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
## **Applications**
- Power Management in DC/DC Converter.
- For LED Backlight DC-DC boost converter
- solution.
## **Pin Description**
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**----- Start of picture text -----**<br>
D<br>D<br>D<br>D<br>S<br>S<br>S<br>G<br>**----- End of picture text -----**<br>
Top View of SOP-8
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**----- Start of picture text -----**<br>
( 5,6,7,8 )<br>D D DD<br>(4)<br>G<br>S S S<br>(1, 2, 3)<br>**----- End of picture text -----**<br>
N-Channel MOSFET
## **Ordering and Marking Information**
> SM1A30NS OO ~~U-~~ O0 O Package Code K : SOP-8 Operating Junction Temperature Range Assembly Material C : -55 to 150[o] C Handling Code Handling Code Temperature Range TR : Tape & Reel (2500ea/reel) Package Code Assembly Material G : Halogen and Lead Free Device : oe 1A30NS SM1A30NS K : XXXXX - Lot Code XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
_www.sinopowersemi.com_
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Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
**®** sinopower MA
## **SM1A30NSK**
**Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings**<br><br>~~ae~~<br>~~a~~|||||
|VDSS<br>~~es~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||100<br>~~es~~<br>~~ae~~<br>|V<br>~~es~~<br>~~ae~~<br>|
|VGSS<br>~~es~~<br>~~a~~|Gate-Source Voltage<br>~~es~~<br>||±20<br>~~es~~<br>~~ae~~<br>||
|TJ<br>~~aee~~|Maximum Junction Temperature<br>~~ee~~||150<br>~~ae~~<br>~~ee~~|°C<br>~~ae~~<br>~~ee~~|
|TSTG<br>~~ee~~<br>~~a~~|Storage Temperature Range<br>~~ee~~<br>~~ee~~||-55 to 150<br>~~ee~~<br>~~ee~~||
|IS<br>~~a~~<br>~~ee~~|Diode Continuous Forward Current<br>~~ee~~<br>~~ee~~|TA=25°C<br>~~ee~~<br>~~eee~~|3<br>~~ee~~<br>~~eee~~|A<br>~~ee~~|
|ID<br>~~ee~~|Continuous Drain Current<br>~~ee~~|TA=25°C<br>~~eee~~|5<br>~~eee~~|A|
|||TA=70°C<br>~~eee~~<br>~~a~~|4<br>~~eee~~<br>~~a~~||
|IDM<br>a<br>~~ee~~<br>~~a~~|Pulsed Drain Current<br>~~ee ~~|TA=25°C<br> ~~eee~~|20<br>~~eee~~||
|PD<br>~~a~~|Maximum Power Dissipation|TA=25°C<br>~~**a**~~|3.5<br>~~**a**e~~|W<br>~~e~~|
|||TA=70°C<br>~~**a**~~|2.2<br>~~**a**e~~||
|RθJA<br>c<br>~~[Ee~~<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~[Ee~~|t≤10s<br>~~[Ee~~<br>~~ee~~|35<br>~~[Ee~~<br>~~ee~~|°C/W<br>~~[Ee~~<br>~~ee~~|
|||Steady State<br>~~[Ee~~<br>~~ee~~|70<br>~~[Ee~~<br>~~ee~~|°C/W<br>~~[Ee~~<br>~~ee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Single pulse|L=0.5mH<br>~~ee~~|10<br>~~ee ~~|A<br> ~~ee~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Single pulse|L=0.5mH|25|mJ|
Note a：Pulse width limited by max. junction temperature.
Note b：UIS tested and pulse width limited by maximum junction temperature 150[o] C (initial temperature Tj=25[o] C). Note c：Surface Mounted on 1in[2] pad area.
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Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
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**®** sinopower WN
## **SM1A30NSK**
## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~I~~|**Parameter**|**Test Conditions**|**Test Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~PR~~||||||||
|BVDSS<br>~~PR~~|Drain-Source Breakdown Voltage|VGS=0V, IDS=250µA||100|-|-|V|
|IDSS<br>~~PRa~~|Zero Gate Voltage Drain Current|VDS=80V, VGS=0V<br>TJ=85°C<br>~~ee~~<br>~~po~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~po~~|-<br>~~ee~~<br>~~po~~|-<br>~~ee~~<br>~~po~~|30<br>~~ee~~<br>~~po~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage|VDS=VGS, IDS=250µA||1|2|3|V|
|IGSS<br>~~aee~~|Gate Leakage Current<br>~~ee~~|VGS=±16V, VDS=0V<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|uA<br>~~ee~~|
|RDS(ON)<br>d <br>~~ee~~|Drain-Source On-state Resistance<br>~~ee~~|VGS=10V, IDS=4A<br>~~ee~~||-<br>~~ee~~|58<br>~~ee~~|70<br>~~ee~~|mΩ<br>~~ee~~|
|||VGS=4.5V, IDS=3A<br>~~ee~~<br>~~po~~||-<br>~~ee~~<br>~~po~~|61<br>~~ee~~<br>~~po~~|80<br>~~ee~~<br>~~po~~|mΩ<br>~~ee~~<br>~~po~~|
|**Diode Characteristics**<br>~~ee ee~~<br>~~po~~<br>~~a~~<br>~~es~~||||||||
|VSD<br>d<br>~~a~~|Diode Forward Voltage<br>~~es~~|ISD=3A, VGS=0V||-|0.8|1.3|V|
|trr<br>~~a~~<br>~~a~~<br>~~rs~~|Reverse Recovery Time<br>~~es~~<br>~~a~~|ISD=4A, dlSD/dt=100A/µs<br>~~—~~||-<br>~~—|~~|29<br>~~|~~<br>~~|~~|-<br>~~|~~|ns|
|Qrr<br>~~rs~~|Reverse Recovery Charge|||-<br>~~—|~~|42<br>~~|~~<br>~~|~~|-<br>~~|~~|nC|
|**Dynamic Characteristics**<br>e<br>~~rs~~<br>~~— |~~<br>~~|~~<br>~~|~~<br>~~FR~~||||||||
|RG<br>~~FR~~<br>~~ee~~<br>~~ee~~|Gate Resistance|VGS=0V,VDS=0V,f=1MHz<br>~~|~~||-<br>~~|~~|2.5<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~|Ω|
|Ciss<br>~~FR~~<br>~~ee~~<br>~~ee~~<br>~~es~~|Input Capacitance|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~|~~<br>~~—~~<br>~~ee~~<br>~~|~~<br>~~—~~||-<br>~~|~~<br>~~—~~~~**|**~~|920<br>~~|~~<br>~~|~~|1200<br>~~|~~<br>~~|~~|pF|
|Coss<br>~~ee~~<br>~~ee~~<br>~~es~~<br>~~ee~~|Output Capacitance<br>~~ee~~|||-<br>~~|~~<br>~~—~~~~**|**~~<br>~~|~~|60<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~ee~~<br>~~ee~~|Reverse Transfer Capacitance<br>~~ee~~|||-<br>~~—~~~~**|**~~<br>~~|~~<br>~~—|~~|31<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|-<br>~~|~~<br>~~|~~<br>~~|~~||
|td(ON)<br>~~es~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Delay Time<br>~~ee~~|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω<br>~~—~~<br>~~ee~~<br>~~|~~<br>~~—~~<br>~~—~~<br>~~|~~<br>~~|~~||-<br>~~— ~~~~**|**~~<br>~~|~~<br>~~—|~~<br>~~—|~~|12<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~||~~|22<br>~~|~~<br>~~|~~|ns|
|tr<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-on Rise Time<br>~~ee~~|||-<br>~~—|~~<br>~~—|~~<br>~~|~~|7<br>~~|~~<br>~~|~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~|~~|13<br>~~|~~<br>~~|~~<br>~~|~~||
|td(OFF)<br>~~ee~~<br>~~ee~~<br>~~ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~— |~~<br>~~—|~~<br>~~|~~|30<br>~~|~~<br>~~|~~<br>~~||~~<br>~~|~~<br>~~|~~<br>~~|~~|54<br>~~|~~<br>~~|~~<br>~~|~~||
|tf<br>~~ee~~<br>~~ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~— |~~<br>~~|~~<br>~~|~~|7<br>~~| |~~<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~|13<br>~~|~~<br>~~|~~<br>~~|~~<br>~~|~~||
|**Gate Charge Characteristics**<br>e<br>~~|~~<br>~~ee~~<br>~~|~~<br>~~|~~<br>~~a~~||||||||
|Qg<br>~~a~~|Total Gate Charge|VDS=50V, VGS=4.5V,<br>IDS=4A<br>~~—~~||-<br>~~—~~<br>||10<br>~~|~~|-|nC<br>~~a~~|
|Qg<br>~~a~~<br>~~a~~<br>~~a~~|Total Gate Charge<br>~~a~~<br>~~ee~~|VDS=50V, VGS=10V,<br>IDS=4A<br>~~a~~<br>~~—~~<br>~~|~~<br>~~—~~||-<br>~~a~~<br>~~—~~<br>|<br>~~|~~|20<br>~~a~~<br>~~|~~<br>~~ft~~|28<br>~~a~~<br>~~ft~~||
|Qgs<br>~~a~~<br>~~a~~|Gate-Source Charge<br>~~ee~~<br>~~ee~~|||-<br>~~—~~<br>|<br>~~|~~<br>~~—~~<br>~~|~~|4<br>~~|~~<br>~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~||
|Qgd<br>~~a~~|Gate-Drain Charge<br>~~ee~~<br>~~ee~~|||-<br>~~| ~~<br>~~—~~<br>~~|~~|4<br> ~~ft~~<br>~~ft~~|-<br>~~ft~~<br>~~ft~~||
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Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
_www.sinopowersemi.com_
## **SM1A30NSK**
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®<br>**----- End of picture text -----**<br>
## **Typical Operating Characteristics**
**Power Dissipation**
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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>T =25 o C<br>A<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)<br>- Power (W)<br>tot<br>P<br>**----- End of picture text -----**<br>
**Drain Current**
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6<br>5<br>4<br>3<br>2<br>1<br>TA=25oC,VG=10V<br>0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
**Safe Operation Area**
**Thermal Transient Impedance**
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50<br>10<br>300µs<br>1<br>1ms<br>0.1<br>10ms<br>1s<br>0.01 A TA=25oC DC 100ms<br>0.01 0.1 1 10 100 800<br>VDS - Drain - Source Voltage (V)<br>Rds(on) Limit<br>- Drain Current (A)<br>ID<br>**----- End of picture text -----**<br>
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3<br>1 Duty = 0.5<br>0.2<br>0.1<br>0.05<br>0.1 0.02<br>0.01<br>Single Pulse<br>0.01<br>Mounted on 1in 2 pad<br>1E-3 RθJA : 35oC/W<br>1E-4 1E-3 0.01 0.1 1 10 60<br>Square Wave Pulse Duration (sec)<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
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sinopower UN **®**
**SM1A30NSK**
## **Typical Operating Characteristics (Cont.)**
**Output Characteristics**
**Drain-Source On Resistance**
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20 120<br>VGS=3.5,4,5,6,7,8,9,10V<br>100<br>16<br>80<br>V =4.5V<br>12 GS<br>60<br>V =10V<br>8 GS<br>3V 40<br>4<br>20<br>2.8V<br>0 fo 0 He<br>0 1 2 3 4 5 6 0 4 8 12 16 20<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>210 1.6<br>IDS=4A I DS =250µA<br>1.4<br>180<br>1.2<br>150<br>1.0<br>120<br>0.8<br>90<br>0.6<br>60<br>0.4<br>30 0.2<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br> - Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
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SM1A30NSK ®<br>Typical Operating Characteristics (Cont.)<br>Drain-Source On Resistance Source-Drain Diode Forward<br>3.0 20<br>V = 10V<br>GS<br> IDS = 4A 10<br>2.5<br>T =150 o C<br>2.0 j<br>1.5 o<br>T =25 C<br>1 j<br>1.0<br>0.5<br>0.0 RON@Tj=25oC: 58mΩ 0.1<br>-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br> Tj - Junction Temperature (°C) VSD - Source - Drain Voltage (V)<br>Capacitance Gate Charge<br>1400 10<br>Frequency=1MHz V = 50V<br>9 DS<br> I = 4A<br>1200 DS<br>8<br>1000 7<br>Ciss<br>6<br>800<br>5<br>600<br>4<br>400 3<br>2<br>200<br>1<br>Coss<br>0 a Crss 0 t|<br>0 8 16 24 32 40 0 4 8 12 16 20<br>VDS - Drain-Source Voltage (V) QG - Gate Charge (nC)<br> - Source Current (A)<br>IS<br>Normalized On Resistance<br>C - Capacitance (pF)<br> - Gate-source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
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**®** sinopower WX.
**SM1A30NSK**
## **Avalanche Test Circuit and Waveforms**
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VDS L tp VDSX(SUS)<br>VDS<br>DUT<br>f IAS aN<br>RG<br>VDD<br>VDD<br>EAS<br>tp IL<br>0.01 Ω<br>tAV<br>**----- End of picture text -----**<br>
## **Switching Time Test Circuit and Waveforms**
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VDS<br>RD<br>DUT<br>VGS<br>RG<br>e VDD<br>tp<br>se<br>**----- End of picture text -----**<br>
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VDS<br>90%<br>10%<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
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sinopower WA. **®**
**SM1A30NSK**
## **Package Information**
## **SOP-8**
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**----- Start of picture text -----**<br>
-T- SEATING PLANE < 4 mils<br>D<br>SEE VIEW A<br>°<br>e b c<br>it - f7<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>VIEW A<br>SYM MILLIMETERS SOP-8 INCHES RECOMMENDED LAND PATTERN 1.27<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.75 - 0.069<br>=a<br>A1 0.10 0.25 0.004 0.010<br>A2 1.25 - 0.049 - 2.2<br>b 0.31 0.51 0.012 0.020<br>c 0.17 0.25 0.007 0.010<br>D 4.80 5.00 0.189 0.197 5.74<br>=——{[—— a<br>E 5.80 6.20 0.228 0.244<br>E1 3.80 4.00 0.150 0.157 2.87<br>e 1.27 BSC 0.050 BSC<br>h 0.25 0.50 0.010 0.020<br>L 0.40 1.27 0.016 0.050 0.8<br>0 0° 8 ° 0 ° 8 ° 0.635<br>ae UNIT: mm<br>Note: 1. Follow JEDEC MS-012 AA.<br> 2. Dimension “D” does not include mold flash, protrusions or gate burrs.<br> Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.<br> 3. Dimension “E” does not include inter-lead flash or protrusions.<br> Inter-lead flash and protrusions shall not exceed 10 mil per side.<br>E1 E<br>h X 45<br>A2 A 0.25<br>A1<br>**----- End of picture text -----**<br>
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## **SM1A30NSK**
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®<br>**----- End of picture text -----**<br>
## **Carrier Tape & Reel Dimensions**
~~1 (@6~~ OD0 P0 ~~é~~ f P2 ~~ofee~~ P1 A K0 B A0 OD1 B A SECTION A-A SECTION B-B d T1 **Application A H T1 C d D W E1 F** 330.0± 12.4+2.00 13.0+0.50 50 MIN. 1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±0.05 2.00 -0.00 -0.20 **SOP-8 P0 P1 P2 D0 D1 T A0 B0 K0** 1.5+0.10 0.6+0.00 4.0±0.10 8.0±0.10 2.0±0.05 1.5 MIN. 6.40±0.20 5.20±0.20 2.10±0.20 -0.00 -0.40 ~~aaa~~ (mm) Copyright Sinopower Semiconductor, Inc. 9 _www.sinopowersemi.com_ Rev. A.1 - July, 2014
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sinopower **®** YX
**SM1A30NSK**
## **Taping Direction Information**
## **SOP-8**
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**----- Start of picture text -----**<br>
USER DIRECTION OF FEED<br>**----- End of picture text -----**<br>
## **Classification Profile**
Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
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**®**
## **SM1A30NSK**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
**Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~SS~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~———————~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~————~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
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Copyright Sinopower Semiconductor, Inc. Rev. A.1 - July, 2014
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Updated at February 12, 2024
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