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SM1A25NSV
SM1A25NSV, Single MOSFET, N Channel, 100V, SOT-223
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|---|---|
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Datasheet
## **SM1A25NSV**
- N-Channel Enhancement Mode MOSFET
- ~~pO~~
## **Features**
## **Pin Description**
- 100V/3.3A,
- RDS(ON)= 162mΩ(max.) @ VGS= 10V
- RDS(ON)= 180mΩ(max.) @ VGS= 4.5V
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D<br>G<br>S D<br>S<br>**----- End of picture text -----**<br>
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
Top View SOT-223
## **Applications**
- Power Management in DC/DC Converter.
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D (2)<br>G (1)<br>S (3)<br>**----- End of picture text -----**<br>
N-Channel MOSFET
## **Ordering and Marking Information**
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SM1A25NS Package Code<br> V : SOT-223<br>Assembly Material<br>Operating Junction Temperature Range<br>Handling Code C : -55 to 150 [o] C<br>Temperature Range Handling Code<br>Package Code TR : Tape & Reel (2500ea/reel)<br>Assembly Material<br> G : Halogen and Lead Free Device<br>(Ee | |<br>1A25N<br>SM1A25NS V: XXXXX - Lot Code<br>XXXXX<br>Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate<br>termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free<br>-<br>requirements of IPC/JEDEC J STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER<br>defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in<br>homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).<br>**----- End of picture text -----**<br>
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
## **SM1A25NSV**
## **Absolute Maximum Ratings** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~a~~<br>~~Re~~|**Parameter**<br>|**Parameter**<br>|**Rating**<br>|**Unit**<br>|
|---|---|---|---|---|
|**Common Ratings **<br>~~Re~~<br>~~ae~~<br>~~a~~|||||
|VDSS<br>~~Rees~~<br>~~a~~|Drain-Source Voltage<br>~~es~~<br>||100<br>~~es~~<br>~~ae~~|V<br>~~es~~<br>~~ae~~|
|VGSS<br>~~es~~<br>~~a~~|Gate-Source Voltage<br>~~es~~<br>||±20<br>~~es~~<br>~~ae~~||
|TJ<br>~~es~~<br>~~a~~<br>~~a~~|Maximum Junction Temperature<br>~~es~~<br>~~a~~||150<br>~~es~~<br>~~ae~~<br>~~ne~~|°C<br>~~es~~<br>~~ae~~<br>~~ne~~<br>|
|TSTG<br><br>~~a~~<br>~~a~~|Storage Temperature Range<br>~~a~~<br>||-55 to 150<br>~~ne~~<br>||
|IS<br><br>~~a~~<br>~~a (~~|Diode Continuous Forward Current<br>~~a~~<br>~~(~~|TA=25°C<br>~~(~~<br>~~ee~~|3<br>~~ne~~<br>~~(~~<br>~~er~~|A<br>~~ne~~<br>~~(~~<br>~~er~~|
|ID<br>~~a (~~|Continuous Drain Current<br>~~(~~<br>~~e~~~~**e**~~|TA=25°C<br>~~(~~<br>~~**e**~~<br>~~ee~~|3.3<br>~~(~~<br>~~**e**~~<br>~~er~~|A<br>~~(~~<br>~~**e**~~<br>~~er~~|
|||TA=70°C<br>~~**e**~~<br>~~ee~~|2.6<br>~~**e**~~<br>~~er~~<br>~~e~~||
|IDM<br>a<br>~~a~~|Pulsed Drain Current<br>~~e~~~~**e**~~<br>|TA=25°C<br>~~**e**~~<br>~~ee~~<br>|13<br>~~**e**~~<br>~~er~~<br>~~e~~<br>|A<br>~~**e**~~<br>~~er~~<br>|
|PD<br>|Maximum Power Dissipation<br>~~a~~|TA=25°C<br>~~a~~<br>~~a~~|3.5<br>~~a~~<br>~~ee~~|W<br>~~a~~|
|||TA=70°C<br>~~a~~<br>~~a~~<br>~~te~~|2.2<br>~~a~~<br>~~ee~~<br>~~te~~||
|RθJA<br>c<br>~~a~~|Thermal Resistance-Junction to Ambient<br>~~ee~~|t≤10s<br>~~a~~<br>~~ee~~<br>~~te~~<br>~~rs~~|35<br>~~ee~~<br>~~ee~~<br>~~te~~<br>~~ee~~|°C/W<br>~~ee~~<br>~~ee~~|
|||SteadyState<br>~~ee~~<br>~~te~~<br>~~rs~~|70<br>~~ee~~<br>~~te~~<br>~~ee~~|°C/W<br>~~ee~~<br>~~ee~~|
|IAS<br>b<br>~~a~~|Avalanche Current, Singlepulse(L=0.5mH)<br>~~te~~<br>~~rs~~||5<br>~~te~~<br>~~ee ~~|A<br> ~~ee~~|
|EAS<br>b<br>~~a~~|Avalanche Energy, Singlepulse(L=0.5mH)||6.25|mJ|
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
## **SM1A25NSV**
## **Electrical Characteristics** (TA = 25°C Unless Otherwise Noted)
|**Symbol**<br>~~a~~|**Parameter**<br>|**Test Conditions**<br>|**Test Conditions**<br>|**Min.**<br>|**Typ.**<br>|**Max.**<br>|**Unit**<br>|
|---|---|---|---|---|---|---|---|
|**Static Characteristics**<br>~~Cn~~||||||||
|BVDSS<br>~~Cn~~<br>~~a~~|Drain-Source Breakdown Voltage<br>~~Cn~~<br>~~ee~~|VGS=0V, IDS=250µA<br>~~Cn~~<br>~~ee~~||100<br>~~Cn~~|-<br>~~Cn~~|-<br>~~Cn~~|V<br>~~Cn~~|
|IDSS<br>~~a~~<br>~~ee~~|Zero Gate Voltage Drain Current<br>~~ee ~~<br>~~ee~~|VDS=80V, VGS=0V<br>TJ=85°C<br> ~~ee~~<br>~~ee~~<br>~~a~~||-<br>~~ee~~|-<br>~~ee~~|1<br>~~ee~~|µA<br>~~ee~~|
||||TJ=85°C<br>~~ee~~<br>~~a~~|-<br>~~ee~~|-<br>~~ee~~|30<br>~~ee~~||
|VGS(th)<br>~~a~~|Gate Threshold Voltage<br>~~ee~~|VDS=VGS, IDS=250µA||1|2|3|V|
|IGSS<br>~~a~~<br>~~pf~~|Gate Leakage Current<br>~~ee~~<br>~~pf~~|VGS=±20V, VDS=0V<br>~~ee~~||-<br>~~ee~~|-<br>~~ee~~|±10<br>~~ee~~|µA<br>~~ee~~|
|RDS(ON)<br>d <br>~~pf~~|Drain-Source On-state Resistance<br>~~ee~~<br>~~pf~~|VGS=10V, IDS=3.3A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|135<br>~~ee~~<br>~~ee~~|162<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|||VGS=4.5V, IDS=3A<br>~~ee~~||-<br>~~ee~~<br>~~ee~~|138<br>~~ee~~<br>~~ee~~|180<br>~~ee~~<br>~~ee~~|mΩ<br>~~ee~~<br>~~ee~~|
|**Diode Characteristics**<br>~~pf~~<br>~~ee~~<br>~~ee ee ee~~<br>~~|~~||||||||
|VSD<br>d<br>~~a~~|Diode Forward Voltage<br>~~a~~|ISD=3A, VGS=0V<br>~~a~~||-<br>~~a~~|0.8<br>~~a~~|1.3<br>~~a~~|V<br>~~a~~|
|trr<br>~~a~~<br>~~a~~|Reverse Recovery Time<br>~~a~~|ISD=3A, dlSD/dt=100A/µs<br>~~a~~<br>~~ee~~<br>||-<br>~~a~~<br>~~ee~~|24<br>~~a~~<br>~~ee~~|-<br>~~a~~<br>~~ee~~|ns<br>~~a~~<br>~~ee~~|
|Qrr<br>~~a~~<br>~~en~~|Reverse Recovery Charge<br>|||-<br>~~ee~~<br>~~re~~<br>|31<br>~~ee~~<br>~~re~~<br>|-<br>~~ee~~<br>~~re~~<br>|nC<br>~~ee~~<br>~~re~~<br>|
|**Dynamic Characteristics**e<br>~~re~~<br>~~en~~||||||||
|RG<br>~~enGO~~<br>~~es~~|Gate Resistance<br>~~GO~~|VGS=0V,VDS=0V,f=1MHz<br>~~GO~~||-<br>~~re~~<br>~~GO~~<br>~~ee~~|2.5<br>~~re~~<br>~~GO~~<br>~~ee~~|-<br>~~re~~<br>~~GO~~<br>~~ee~~|Ω<br>~~re~~<br>~~GO~~|
|Ciss<br>~~GO~~<br>~~es~~<br>~~ee~~|Input Capacitance<br>~~GO~~|VGS=0V,<br>VDS=30V,<br>Frequency=1.0MHz<br>~~GO~~||-<br>~~GO~~<br>~~ee~~<br>~~ee~~|440<br>~~GO~~<br>~~ee~~<br>~~ee~~|570<br>~~GO~~<br>~~ee~~<br>~~ee~~|pF<br>~~GO~~|
|Coss<br>~~es~~<br>~~ee~~<br>~~es~~|Output Capacitance|||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|30<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|Crss<br>~~ee~~<br>~~es~~<br>~~es~~|Reverse Transfer Capacitance|||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|16<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|td(ON)<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on Delay Time|VDD=30V, RL=30Ω,<br>IDS=1A, VGEN=10V,<br>RG=6Ω||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|9<br>~~ee~~<br>~~ee~~<br>~~ee~~|17<br>~~ee~~<br>~~ee~~<br>~~ee~~|ns|
|tr<br>~~es~~<br>~~es~~<br>~~es~~|Turn-on Rise Time|||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|7<br>~~ee~~<br>~~ee~~<br>~~ee~~|13<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|td(OFF)<br>~~es~~<br>~~es~~<br>~~ee ee~~|Turn-off Delay Time<br>~~ee~~|||-<br>~~ee~~<br>~~ee~~<br>~~ee~~|18<br>~~ee~~<br>~~ee~~<br>~~ee~~|33<br>~~ee~~<br>~~ee~~<br>~~ee~~||
|tf<br>~~es~~<br>~~ee ee~~|Turn-off Fall Time<br>~~ee~~|||-<br>~~ee~~<br>~~ee~~|4<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~||
|**Gate Charge Characteristics**e<br>~~ee ee~~<br>~~ee~~<br>~~en~~||||||||
|Qg<br>~~es~~|Total Gate Charge|VDS=30V, VGS=4.5V,<br>IDS=3.3A||-<br>~~ee~~|4.8<br>~~ee~~|-<br>~~ee~~|nC|
|Qg<br>~~es~~<br>~~es~~|Total Gate Charge|VDS=30V, VGS=10V,<br>IDS=3.3A<br>~~|~~||-<br>~~ee~~<br>~~a~~|10<br>~~ee~~<br>~~a~~|14<br>~~ee~~<br>~~a~~||
|Qgs<br>~~es~~<br>~~es~~<br>~~a~~|Gate-Source Charge|||-<br>~~ee~~<br>~~a~~<br>~~|~~|1.8<br>~~ee~~<br>~~a~~|-<br>~~ee~~<br>~~a~~||
|Qgd<br>~~es~~<br>~~a~~|Gate-Drain Charge|||-<br>~~a~~<br>~~|~~|1.9<br>~~a~~|-<br>~~a~~||
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%. Note e：Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
## **SM1A25NSV**
## **Typical Operating Characteristics**
## **Drain Current**
**Power Dissipation**
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4.0 4.0<br>3.5 3.5<br>3.0 3.0<br>2.5 2.5<br>2.0 2.0<br>1.5 1.5<br>1.0 1.0<br>0.5 0.5<br>T A =25 o C TA=25A=25=25 o C,VG=10VG=10V=10V<br>0.0 \ 0.0<br>0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C) Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>Safe Operation Area Thermal Transient Impedance<br>50 2<br>1 Duty = 0.5<br>10<br>0.2<br>0.1<br>0.05<br>1<br>300µs 0.02<br>1ms 0.1<br>0.01<br>10ms<br>0.1 100ms<br>1s<br>DC Single Pulse<br>Mounted on 1in2 pad<br>0.01 TA=25oC 0.01 RθJA : 35oC/W<br>0.01 0.1 1 10 100 800 1E-4 1E-3 0.01 0.1 1 10 60<br>VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)<br>Rds(on) Limit<br>- Power (W)<br>tot<br>P - Drain Current (A)<br>ID D<br>- Drain Current (A)<br>ID<br>Normalized Transient Thermal Resistance<br>**----- End of picture text -----**<br>
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4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>TA=25A=25=25 o C,VG=10VG=10V=10V<br>0.0<br>0 20 40 60 80 100 120 140 160<br>Tj - Junction Temperature (°C)j - Junction Temperature (°C)- Junction Temperature (°C)<br>- Drain Current (A)<br>ID D<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
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## **SM1A25NSV**
## **Typical Operating Characteristics (Cont.)**
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Output Characteristics Drain-Source On Resistance<br>14 270<br>VGS=4,5,6,7,8,9,10V 240<br>12<br>210<br>10<br>180<br>8 V GS =4.5V<br>150<br>6 V =10V<br>3V 120 GS<br>4<br>90<br>2<br>60<br>2.5V<br>0 30<br>0 1 2 3 4 5 6 0 2 4 6 8 10 12<br>VDS - Drain - Source Voltage (V) ID - Drain Current (A)<br>Gate-Source On Resistance Gate Threshold Voltage<br>240 1.6<br>I DS =3.3A I DS =250µA<br>220 1.4<br>200 1.2<br>180 1.0<br>160 0.8<br>140 0.6<br>120 0.4<br>100 0.2 _<br>2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150<br>VGS - Gate - Source Voltage (V) Tj - Junction Temperature (°C)<br>)<br>Ω<br>- Drain Current (A) - On - Resistance (m<br>ID<br>DS(ON)<br>R<br>)<br>Ω<br>- On - Resistance (m<br>DS(ON)<br>R Normalized Threshold Voltage<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
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## **SM1A25NSV**
## **Typical Operating Characteristics (Cont.)**
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Drain-Source On Resistance<br>2.5<br>V = 10V<br>GS<br> I = 3.3A<br>DS<br>2.0<br>1.5<br>1.0<br>0.5<br>RON@Tj=25oC: 135mΩ<br>0.0 ss<br>-50 -25 0 25 50 75 100 125 150<br>Tj - Junction Temperature (°C)<br>Capacitance<br>640<br>Frequency=1MHz<br>560<br>480<br>Ciss<br>400<br>320<br>240<br>160<br>80<br>Coss<br>Crss<br>0<br>0 8 16 24 32 40<br>VDS - Drain - Source Voltage (V)<br>Normalized On Resistance<br>C - Capacitance (pF)<br>**----- End of picture text -----**<br>
**Source-Drain Diode Forward**
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20<br>10<br>T =150 o C<br>j<br>T =25oC<br>1 j<br>0.1<br>0.0 0.3 0.6 0.9 1.2 1.5<br>VSD - Source - Drain Voltage (V)<br> - Source Current (A)<br>IS<br>**----- End of picture text -----**<br>
**Gate Charge**
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10<br>V = 30V<br>DS<br>9<br> I = 3.3A<br>DS<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 2 4 6 8 10<br>QG - Gate Charge (nC)<br> - Gate - source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
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## **SM1A25NSV**
## **Avalanche Test Circuit and Waveforms**
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VDS<br>L<br>VDSX(SUS)<br>tp<br>DUT<br>VDS<br>IAS<br>RG<br>VDD<br>VDD<br>tp IL EAS<br>0.01Ω<br>tAV<br>**----- End of picture text -----**<br>
## **Switching Time Test Circuit and Waveforms**
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VDS<br>RD<br>DUT VDS<br>90%<br>VGS<br>RG<br>VDD<br>10%<br>tp<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
## **SM1A25NSV**
## **Package Information**
## **SOT-223**
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D<br>b2<br>PT<br>SEE<br>VIEW A<br>n/n) |<br>PA Ly |<br>| | e | | c<br>e1<br>GAUGE PLANE<br>SEATING PLANE<br>L<br>b<br>|| | a, :<br>VIEW A<br>PO SOT-223 RECOMMENDED LAND PATTERN<br>SYM ee MILLIMETERS INCHES 3.1<br>BO<br>L MIN. MAX. MIN. MAX.<br>A - 1.80 - 0.071<br>es A1 0.02 0.10 0.001 0.004 a e<br>A2 1.50 1.70 0.059 0.067<br>b 0.66 0.84 0.026 0.033<br>es<br>a b2 2.90 3.10 0.114 0.122<br>a c 0.23 0.33 0.009 0.013 5.98<br>a D 6.30 6.70 0.248 0.264<br>E 6.70 7.30 0.264 0.287<br>es<br>E1 3.30 3.70 0.130 0.146<br>e 2.30 BSC 0.091 BSC<br>e1 4.60 BSC 0.181 BSC<br>L 0.75 - 0.030 -<br>0 0° 10° 0° 10° 0.81 2.3<br>a<br>Note : 1. Follow from JEDEC TO-261 AA.<br> 2. Dimension D and E1 are determined at the outermost extremes UNIT: mm<br> of the plastic exclusive of mold flash, tie bar burrs, gate burrs,<br> and interlead flash, but including any mismatch between the top<br> and bottom of the plastic body.<br>°<br>0<br>E1 E<br>A2 A<br>A1<br>0.25<br>1.12<br>1.12<br>**----- End of picture text -----**<br>
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
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## **SM1A25NSV**
## **Carrier Tape & Reel Dimensions**
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OD0 P0 P2 P1 A<br>K0 B A0 OD1 B A<br>SECTION A-A<br>: Lae SECTION B-B<br>d<br>T1<br>E1<br>F<br>W<br>B0<br>T<br>H A<br>**----- End of picture text -----**<br>
|**Application**|**A**|**H**|**T1**<br>**C**|**C**<br>**d**|**D**|**W**|**E1**|**F**|
|---|---|---|---|---|---|---|---|---|
|**SOT-223**|320.0±2.00|2.00<br>50 MIN.|12.4+2.00<br>-0.00<br>13.0+0.50<br>-0.20|13.0+0.50<br>-0.201.5 MIN.|1.5 MIN.<br>20.2 MIN.|20.2 MIN. 12.00±0.30 1.75|0.30 1.75±0.10|5.50±0.05|
||**P0**|**P1**|**P2**<br>**D0**|**D0**<br>**D1**|**T**|**A0**|**B0**|**K0**|
||4.00±0.10|8.00±0.10|2.00±0.50<br>1.5+0.10<br>-0.00|1.5+0.10<br>-0.001.5 MIN.|1.5 MIN.<br>0.6+0.00<br>-0.40|0.6+0.00<br>-0.406.90±0.20|7.50±0.20|2.10±0.20|
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
## **SM1A25NSV**
## **Taping Direction Information**
## **SOT-223**
USER DIRECTION OF FEED
## **Classification Profile**
Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
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## **SM1A25NSV**
## **Classification Reflow Profiles**
|**Profile Feature**|**Sn-Pb Eutectic Assembly**|**Pb-Free Assembly**|
|---|---|---|
|**Preheat & Soak**<br>Temperature min (Tsmin)<br>Temperature max (Tsmax)<br>Time (Tsminto Tsmax) (ts)|100°C<br>150°C<br>60-120 seconds|150°C<br>200°C<br>60-120 seconds|
|Average ramp-up rate<br>(Tsmaxto TP)|3°C/second max.|3°C/second max.|
|Liquidous temperature (TL)<br>Time at liquidous (tL)|183°C<br>60-150 seconds|217°C<br>60-150 seconds|
|Peak package body Temperature<br>(Tp)*|See Classification Temp in table 1|See Classification Temp in table 2|
|p<br>Time (tP)** within 5°C of the specified<br>classification temperature (Tc)|20** seconds|30** seconds|
|Average ramp-down rate (Tpto Tsmax)|6°C/second max.|6°C/second max.|
|Time 25°C to peak temperature|6 minutes max.|8 minutes max.|
|* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.<br>**Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.|||
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) **Package Volume mm[3 ] Volume mm[3 ] Thickness <350 ≥ 350** <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C ~~Ss~~ Table 2. Pb-free Process – Classification Temperatures (Tc) **Package Volume mm[3] Volume mm[3] Volume mm[3] Thickness <350 350-2000 >2000** <1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C ~~——=———~~ **Reliability Test Program Test item Method Description** SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ Tjmax PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C ~~———{—~~ TCT JESD-22, A104 500 Cycles, -65°C~150°C **Customer Service**
## **Sinopower Semiconductor, Inc.**
5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5642050
_www.sinopowersemi.com_
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Copyright Sinopower Semiconductor, Inc. Rev. A.2 - November, 2013
Updated at February 12, 2024
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